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DMP2090UFDB-7
Dual MOSFET, P Channel, 20 V, 20 V, 3.2 A, 3.2 A, 0.09 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: U-DFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 790W
- Power Dissipation P Channel: 790W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 3.2A
- Continuous Drain Current Id P Channel: 3.2A
- Drain Source On State Resistance N Channel: 0.09ohm
- Drain Source On State Resistance P Channel: 0.09ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.137 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMP2090UFDB** **DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---| |||| |**BVDSS**|**RD1D2 max**|**ID**<br>**TA = +25°C**| |-20V|90mΩ@VGS= -4.5V|-3.2A| ||120mΩ@VGS= -2.5V|-2.7A| ## **Features** - PCB Footprint of 4mm[2] - Low On-Resistance - Low Input Capacitance - Low Profile, 0.6mm Maximum Height - **ESD Protected Gate** - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** **https://www.diodes.com/quality/product-definitions/** ## **Description and Applications** This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. ## **Mechanical Data** - Case: U-DFN2020-6 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Load Switch - Power Management Functions - Portable Power Adaptors - Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e4** - Terminals Connections: See Diagram Below - Weight: 0.0065 grams (Approximate) **==> picture [86 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> U-DFN2020-6 (Type B)<br>**----- End of picture text -----**<br> **==> picture [235 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> S2<br>G2<br>D2<br>D1<br>D1<br>D2<br>ESD protected Gate G1<br>S1<br>Pin1<br>ad<br>Bottom View<br>**----- End of picture text -----**<br> **==> picture [69 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Internal Schematic<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)| |---|---|---| |||| |**Part Number**|**Case**|**Packaging**| |DMP2090UFDB-7|U-DFN2020-6(Type B)|3000/Tape & Reel| |DMP2090UFDB-13|U-DFN2020-6 (TypeB)|10,000/Tape &Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 1 of 8 **www.diodes.com** DMP2090UFDB Document number: DS42300 Rev. 2 - 2 December 2019 © Diodes Incorporated **DMP2090UFDB** ## **Marking Information** Site 1: **==> picture [16 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> E4<br>**----- End of picture text -----**<br> E4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) **==> picture [521 x 88] intentionally omitted <==** E4 = Product Type Marking Code YWX = Date Code Marking **E4** Y = Year (ex: 9 = 2019) **YWX** W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key **Year 2019 2020 2021 2022 2023 2024 2025 2026 2027** ~~se~~ **Code** 9 0 1 ~~ee~~ 2 3 4 ~~ee~~ 5 ~~ee~~ 6 7 **Week 1-26 27-52 53** ~~ee~~ **Code** A-Z a-z z **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~ee~~ **Code** T U V W X Y Z 2 of 8 **www.diodes.com** DMP2090UFDB Document number: DS42300 Rev. 2 - 2 December 2019 © Diodes Incorporated **DMP2090UFDB** ## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) **==> picture [496 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |Characteristic|Symbol|Value|Unit| |Drain-Source Voltage|VDSS|-20|V| |Gate-Source Voltage|VGSS|±8|V| |Steady|TA = +25°C|-3.2| |Continuous Drain Current (Note 6) VGS = -4.5V|ID|A| |State|TA = +70°C|-2.5| |Maximum Continuous Body Diode Forward Current (Note 6)|IS|-1.9|A| |Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|IDM|-22|A| |Avalanche Current (Note 7) L = 0.1mH|IAS|-11|A| |Avalanche Energy (Note 7) L = 0.1mH|EAS|7|mJ| **----- End of picture text -----**<br> ## **Thermal Characteristics** **==> picture [497 x 69] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Characteristic|Symbol|Value|Unit| |Total Power Dissipation (Note 5)|TA = +25°C|PD|0.79|W| |Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RϴJA|159|°C/W| |Total Power Dissipation (Note 6)|TA = +25°C|PD|1.39|W| |Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RϴJA|90|°C/W| |Operating and Storage Temperature Range|TJ,|TSTG|-55 to +150|°C| **----- End of picture text -----**<br> **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) **==> picture [520 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |PC|Characteristic|Symbol|feff|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 8)| |I|Drain-Source Breakdown Voltage|GD|BVDSS|RD|-20|I|—|(S(O|—|V|(OO|VGS = 0V, ID = -250μA| |Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|-1.0|μA|VDS = -20V, VGS = 0V| |a|Gate-Source Leakage|IGSS|—|—|±10|μA|VGS = ±8V, VDS = 0V| |ON CHARACTERISTICS (Note 8)| |Pf|Gate Threshold Voltage|VGS(TH)|ef|-0.3|—|-1.0|V|VDS = VGS, ID = -250μA| |—|37|90|VGS = -4.5V, ID = -4A| |Static Drain1-Drain2 On-Resistance|RD1D2|mΩ| |LF|—|50|120|VGS = -2.5V, ID = -3.5A| |SS| |(nD|Diode Forward Voltage|VSD|—|(RRR|-0.7|(ORY|-1.2|(OO|V|(OO|VGS = 0V, IS = -1.0A| |DYNAMIC CHARACTERISTICS (Note 9)| |Input Capacitance|Ciss|—|634|—|pF| |Output Capacitance|Coss|—|81|—|pF|VDS = -10V, VGS = 0V,| |f = 1.0MHz| |ee|Reverse Transfer Capacitance|Crss|—|66|—|pF| |Gate Resistance|Rg|—|20|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz| |Total Gate Charge (VGS = -4.5V)|Qg|—|6.8|—|nC| |Gate-Source Charge|Qgs|—|0.7|—|nC|VVDSDS = -4.5V, I = -10V|D = -4A,| |ee|Gate-Drain Charge|Qgd|—|1.6|—|nC| |Turn-On Delay Time|tD(ON)|—|4.2|—|ns| |Turn-On Rise Time|tR|—|3.4|—|ns|VDS = -10V, VGS = -4.5V,| |Turn-Off Delay Time|tD(OFF)|—|23|—|ns|RL = 3.3Ω, Rg = 1Ω| |———es|Turn-Off Fall Time|tF|—|9.6|—|ns| |ee| |Body Diode Reverse Recovery Time|tRR|—|1.8|—|ns|IS = -1.0A, dI/dt = 100A/μs| |———|Body Diode Reverse Recovery Charge|QRR|—|9.4|—|nC|IS = -1.0A, dI/dt = 100A/μs| **----- End of picture text -----**<br> Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 3 of 8 **www.diodes.com** DMP2090UFDB Document number: DS42300 Rev. 2 - 2 December 2019 © Diodes Incorporated **DMP2090UFDB** **==> picture [499 x 683] intentionally omitted <==** **----- Start of picture text -----**<br> 20.0 10<br>VGS = -8.0V VDS = -5V<br>VGS = -4.5V 8<br>15.0 O U<br>VGS = -3.0V VGS = -2.5V<br>6<br>10.0 A a n of<br>VGS = -2.0V 4<br>5.0 a= i n TJ = 85℃<br>VGS = -1.5V 2 TJ = 150℃ TJ = 25℃<br>VGS = -1.2V TJ = 125℃ TJ = -55℃<br>0.0 L——— 0 i an<br>0 0.4 0.8 1.2 1.6 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.2 0.3<br>0.25<br>VGS = -2.5V<br>0.15 To ) eo<br>0.2<br>0.1 4 } 0.15 f eeo<br>0.1<br>0.05 VGS = -4.5V ID = -4.0A<br>o o 0.05 K N<br>0 fiey}] 0 A SS<br>0 3 6 9 12 15 0 2 4 6 8<br>ID1D2, DRAIN1-DRAIN2 CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.14 1.8<br>VGS = -4.5V<br>0.12 TJ = 125℃ TJ = 150℃ 1.6 VGS = -4.5V, ID = -4.0A<br>TE] «69<br>0.1<br>1.4<br>0.08 ase fF<br>TJ = 85℃<br>1.2<br>0.06 TJ = 25℃<br>Sa eer<br>1<br>0.04 TJ = -55℃<br>VGS = -2.5V, ID = -3.5A<br>0.8<br>0.02<br>0 A} 0.6 KP<br>0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Junction<br>Junction Temperature Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN1-DRAIN2 ON-RESISTANCE (Ω) , DRAIN1-DRAIN2 ON-RESISTANCE (Ω)<br>D1D2 D1D2<br>R R<br>(NORMALIZED)<br>, DRAIN1-DRAIN2 ON-RESISTANCE<br>, DRAIN1-DRAIN2 ON-RESISTANCE (Ω)<br>D1D2<br>D1D2 R<br>R<br>**----- End of picture text -----**<br> 4 of 8 **www.diodes.com** DMP2090UFDB Document number: DS42300 Rev. 2 - 2 December 2019 © Diodes Incorporated **DMP2090UFDB** **==> picture [500 x 675] intentionally omitted <==** **----- Start of picture text -----**<br> 0.2 1<br>0.18 a 0.9<br>0.16 i 0.8<br>0.14 0.7<br>VGS = -2.5V, ID = -3.5A<br>0.12 | eee 0.6 S TE ID = -1mA<br>a o S<br>0.1 0.5<br>rT O S<br>0.08 0.4<br>ID = -250μA<br>0.06 => _45> 0 0.3 oS<br>=> TT NS<br>0.04 VGS = -4.5V, ID = -4.0A 0.2<br>0.02 F HS 0.1 S EE<br>0 a 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>20 10000<br>f = 1MHz<br>VGS = 0V<br>15 f es es<br>1000 Ciss<br>10 f f<br>5 ff|| 100 aS e Coss e<br>TJ = 125TJ = 150 [o] C [o] C TJ = 25TJ = 85 [o] C [o] C Crss<br>TJ = -55 [o] C<br>0 10<br>0 0.3 0.6 0.9 1.2 1.5 0 4 8 12 16 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>8 100<br>R<br>DS(ON)<br>Limited PW = 1ms<br>a PW = 100µs an<br>PW = 10ms<br>6 10<br>4 1<br>PW = 100ms<br>TJ(Max) = 150℃<br>2 0.1 TC = 25℃ PW = 1s<br>VDS = -10V, ID = -4A Single PulseDUT on PW = 10s<br>1*MRP Board DC<br>0 0.01 VGS = -4.5V oe Err<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN1-DRAIN2 ON-RESISTANCE (Ω)<br>GS(TH)<br>D1D2 V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 5 of 8 **www.diodes.com** DMP2090UFDB Document number: DS42300 Rev. 2 - 2 December 2019 © Diodes Incorporated **DMP2090UFDB** **==> picture [449 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1 = nc<br>SE SSS eo<br>CTT Tee eee I CC nh<br>ea meme IN PPP<br>FTC D=0.5 ahfi D=0.9<br>EN CTE ETI IEE<br>D=0.3<br>D=0.7<br>0.1 e UW,eZZae CT OCA<br>Se<br>D=0.1<br>BRa[oTTToraAe TT TPPPT<br>APE TTT<br>D=0.05<br>EHH TET<br>OE<br>TTP NUT ELIE IIE CECH UT<br>D=0.02<br>0.01 1 Te a a<br>ae os ee ee ee ee ee<br>D=0.01<br>P PA R<br>| TM OL TT ET ETTT<br>D=0.005<br>FATT<br>RθJA(t) = r(t) * RθJA<br>Heittitete CECE YAM MIE EI TTT TET RθJA = 157℃/W Mi l<br>D=Single Pulse Duty Cycle, D = t1 / t2<br>0.001<br>0.0000010.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 6 of 8 **www.diodes.com** DMP2090UFDB Document number: DS42300 Rev. 2 - 2 December 2019 © Diodes Incorporated **DMP2090UFDB** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **U-DFN2020-6 (Type B)** **==> picture [236 x 240] intentionally omitted <==** **----- Start of picture text -----**<br> A3<br>A1<br>A<br>Seating Plane<br>D<br>asa<br>D2 D2<br>z1<br>E z1 E2<br>k<br>L<br>e<br>z<br>b<br>(Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br> **==> picture [108 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> U-DFN2020-6<br>Type B<br>Dim Min Max Typ<br>A 0.545 0.605 0.575<br>A1 0.00 0.05 0.02<br>====<br>A3 - - 0.13<br>b 0.20 0.30 0.25<br>D 1.95 2.075 2.00<br>D2 0.50 0.70 0.60<br>e - - 0.65<br>E 1.95 2.075 2.00<br>E2 0.90 1.10 1.00<br>k - - 0.45<br>L 0.25 0.35 0.30<br>z - - 0.225<br>z1 - - 0.175<br>All Dimensions in mm<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **U-DFN2020-6 (Type B)** **==> picture [190 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> X2<br>C<br>ro<br>X1(2x)<br>Y2 Y1(2x)<br>G<br>G1<br>ees<br>Y<br>“Tt vo X<br>**----- End of picture text -----**<br> **==> picture [99 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Value<br>Dimensions<br>Tt (in mm)<br>C 0.650<br>G 0.150<br>G1 0.450<br>X 0.350<br>X1 0.600<br>X2 1.650<br>Y 0.500<br>Y1 1.000<br>Y2 2.300<br>_<br>**----- End of picture text -----**<br> 7 of 8 **www.diodes.com** DMP2090UFDB Document number: DS42300 Rev. 2 - 2 December 2019 © Diodes Incorporated **DMP2090UFDB** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. - B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated **www.diodes.com** 8 of 8 **www.diodes.com** DMP2090UFDB Document number: DS42300 Rev. 2 - 2 December 2019 © Diodes Incorporated
Updated at June 9, 2026
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