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DMP2035UTS-13
Dual MOSFET, P Channel, 20 V, 20 V, 6.04 A, 6.04 A
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSSOP
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 890mW
- Power Dissipation P Channel: 890mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 6.04A
- Continuous Drain Current Id P Channel: 6.04A
- Drain Source On State Resistance N Channel: -
- Drain Source On State Resistance P Channel: 0.035ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.191 € |
| Current stock | 500+ |
| Lead time | 30 days |
**DMP2035UTS** **DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** ## **Features** - Dual P-Channel MOSFET - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - **Lead Free By Design/RoHS Compliant (Note 1)** - **ESD Protected up to 3kV** - **"Green" Device (Note 2)** ## **Mechanical Data** - Case: TSSOP-8L - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram Below - Marking Information: See Page 5 - Ordering Information: See Page 5 - Weight: 0.039 grams (approximate) - **Qualified to AEC-Q101 Standards for High Reliability** **==> picture [399 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>1 D D 8<br>2 S1 S2 7<br>3 S1 S2 6<br>4 G1 G2 5 S1 S2<br> @ aoe<br>TOP VIEW BOTTOM VIEW Top View Internal Schematic<br>Pin Configuration<br>**----- End of picture text -----**<br> **==> picture [242 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> EO @<br>ESD PROTECTED TO 3kV TOP VIEW BOTTOM VIEW<br>**----- End of picture text -----**<br> **Maximum Ratings** @TA = 25°C unless otherwise specified |**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---| ||||||| |**Characteristic **|||**Symbol **|**Value **|**Unit **| |Drain-Source Voltage|||VDSS|-20|V| |Gate-Source Voltage|||VGSS|±8|V| |Continuous Drain Current (Note 3)|Steady<br>State|TA= 25°C<br>TA= 85°C|ID|6.04<br>3.96|A| |Pulsed Drain Current(Note 4)|||IDM|22|A| ## **Thermal Characteristics** |**Thermal Characteristics**|||| |---|---|---|---| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Power Dissipation (Note 3)|PD|0.89|W| |Thermal Resistance,Junction to Ambient@TA= 25°C|RθJA|142.7|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C| - Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 substrate PC board with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. 1 of 6 **www.diodes.com** DMP2035UTS Document number: DS31940 Rev. 3 - 2 January 2010 © Diodes Incorporated **DMP2035UTS** ## **Electrical Characteristics** @TA = 25°C unless otherwise specified |**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFFCHARACTERISTICS (Note 5) **||||||| |Drain-Source Breakdown Voltage|BVDSS|-20|-|-|V|VGS= 0V,ID= -250μA| |Zero Gate Voltage Drain Current|IDSS|-|-|-1.0|μA|VDS= -20V,VGS= 0V| |Gate-Source Leakage|IGSS|-|-|±10|μA|VGS= ±8V,VDS= 0V| |**ON CHARACTERISTICS (Note 5) **||||||| |Gate Threshold Voltage|VGS(th)|-0.4|-0.7|-1.0|V|VDS= VGS,ID= -250μA| |Static Drain-Source On-Resistance|RDS (ON)|-|23<br>30<br>41|35<br>45<br>62|mΩ|VGS= -4.5V,ID= -4.0A| |||||||VGS= -2.5V,ID= -4.0A| |||||||VGS= -1.8V,ID= -2.0A| |Forward Transfer Admittance||Yfs||-|14|-|S|VDS= -5V,ID= -4A| |Diodes Forward Voltage|VSD|-|-0.7|-1.0|V|Is = -1A,VGS= 0V| |**DYNAMIC CHARACTERISTICS (Note 6)**||||||| |Input Capacitance|Ciss|-|1610|-|pF|VDS= -10V, VGS= 0V,<br>f = 1.0MHz| |Output Capacitance|Coss|-|157|-|pF|| |Reverse Transfer Capacitance|Crss|-|145|-|pF|| |Gate Resistance|Rg|-|9.45|-|Ω|VDS= 0V,VGS= 0V,f = 1MHz| |**SWITCHING CHARACTERISTICS**||||||| |Total Gate Charge|Qg|-|15.4|-|nC|VGS= -4.5V, VDS= -10V,<br>ID= -4A| |Gate-Source Charge|Qgs|-|2.5|-|nC|| |Gate-Drain Charge|Qgd|-|3.3|-|nC|| |Turn-On DelayTime|tD(on)|-|16.8|-|ns|VDS= -10V, VGS= -4.5V,<br>RL= 10Ω, RG= 6.0Ω, ID= -1A| |Turn-On Rise Time|tr|-|12.4|-|ns|| |Turn-Off DelayTime|tD(off)|-|94.1|-|ns|| |Turn-Off Fall Time|tf|-|42.4|-|ns|| **==> picture [490 x 386] intentionally omitted <==** **----- Start of picture text -----**<br> Notes: 5. Short duration pulse test used to minimize self-heating effects.<br>6. Guaranteed by design. Not subject to production testing.<br>30 20<br>VGS = 8.0V V DS = 5V<br>25 VGS = 4.5V 16<br>VGS = 2.0V<br>20 VGS = 3.0V<br>VGS = 2.5V 12<br>15<br>8<br>10<br>VGS = 1.5V TA = 150°C<br>4 TA = 125°C<br>5 TA = 85°C TA = 25°C<br>TA = -55°C<br>0 0 [|]<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics<br>Fig. 2 Typical Transfer Characteristics<br>[f—]<br>DMP2035UTS 2 of 6<br>Document number: DS31940 Rev. 3 - 2 www.diodes.com<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>**----- End of picture text -----**<br> January 2010 © Diodes Incorporated **==> picture [562 x 742] intentionally omitted <==** **----- Start of picture text -----**<br> DMP2035UTS<br>0.10 0.06<br>VGS = 4.5V<br>0.05<br>0.08<br>0.04<br>0.06 TA = 125°C TA = 150°C<br>0.03<br>TA = 85°C<br>0.04 V GS = 1.8V TA = 25°C<br>0.02<br>VGS = 2.5V TA = -55°C<br>0.02 V GS = 4.5V 0.01<br>0 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.06<br>0.05<br>1.4<br>0.04<br>1.2 VGS = 2.5V<br>ID = 5A<br>0.03<br>VGS = 4.5V<br>1.0 ID = 10A<br>0.02 VGS = 4.5V<br>ID = 10A<br>0.8 VGS = 2.5V<br>ID = 5A 0.01<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>1.2 20<br>1.0<br>16<br>0.8<br>ID = 1mA 12 T A = 25°C<br>0.6 ID = 250µA<br>8<br>0.4<br>—~<br>4<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>[>][ i]<br>DMP2035UTS 3 of 6 January 2010<br>Document number: DS31940 Rev. 3 - 2 www.diodes.com © Diodes Incorporated<br>)<br>Ω )<br>, DRAIN-SOURCE ON-RESISTANCE ( Ω<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>NEW PRODUCT R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V) IS<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> **DMP2035UTS** **==> picture [482 x 658] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 10,000<br>10,000 TA = 150°C 1,000 TA = 150°C<br>TA = 125°C<br>1,000 TA = 125°C<br>100<br>TA = 85°C<br>100 TA = 85°C T A = 25°C<br>10 T A = 25°C 10 LE TA = -55°C<br>TA = -55°C<br>1 1<br>0 2 4 6 8 10 12 14 16 18 20 1 2 3 4 5 6 7 8<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Drain-Source Leakage Current Fig. 10 Leakage Current vs. Gate-Source Voltage<br>vs. Drain-Source Voltage<br>10,000 100<br>Single Pulse<br>90 R θJA = 143°C/W<br>RθJA(t) = r(t) * RθJA<br>1,000 TA = 150°C 80 T J - T A = P * R θJA (t)<br>TA = 125°C 70<br>60<br>100 50<br>TA = 85°C<br>T A = 25°C 40<br>T A = -55°C 30<br>10 -<br>20<br>10<br>1 0 Way<br>1 2 3 4 5 6 7 8 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>VGS, GATE-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (s)<br>Fig. 11 Leakage Current vs. Gate-Source Voltage Fig. 12 Single Pulse Maximum Power Dissipation<br>1<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.9<br>D = 0.05<br>RθJA(t) = r(t) * RθJA<br>D = 0.02 R θJA = 143°C/W<br>0.01<br>D = 0.01 P(pk)<br>t 1<br>LU<br>D = 0.005 t 2<br>TJ - TA = P * RθJA(t)<br>Duty Cycle, D = t 1 /t 2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 13 Transient Thermal Response<br>, LEAKAGE CURRENT (nA)<br>IGSS<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>, LEAKAGE CURRENT (nA)<br>IGSS , PEAK TRANSIENT POWER (W)(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 4 of 6 **www.diodes.com** DMP2035UTS Document number: DS31940 Rev. 3 - 2 January 2010 © Diodes Incorporated **DMP2035UTS** ## **Ordering Information** (Note 7) **==> picture [469 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Part Number|Case|Packaging| |DMP2035UTS-13|TSSOP-8L|2500|/ Tape|& Reel| |Notes:|7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.| **----- End of picture text -----**<br> ## **Marking Information** **==> picture [142 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> 8 5<br>Logo<br>P2035U Part no<br>YY WW Xth week: 01~52<br>Year: “09” = 2009<br>1 4<br>Top View<br>**----- End of picture text -----**<br> ## **Package Outline Dimensions** **==> picture [308 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |D| |TSSOP-8L| |See Detail C|Dim|Min|Max|Typ| |E|a|0.09|−|−| |E1|A|−|1.20|−| |A1|0.05|0.15|−| |A2|0.825|1.025|0.925| |b|0.19|0.30|−| |c|0.09|0.20|−| |e|c|D|2.90|3.10|3.025| |b|e|−|−|0.65| |Gauge plane|E|−|−|6.40| |A|A2|a|E1|4.30|4.50 4.425| |L|L|0.45|0.75|0.60| |D|A1| |Detail C|All Dimensions in mm| **----- End of picture text -----**<br> ## **Suggested Pad Layout** **==> picture [72 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> Y<br>X<br>C3 C1<br>C2<br>G<br>**----- End of picture text -----**<br> **==> picture [105 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Dimensions|Value|(in mm)| |X|0.45| |Y|1.78| |C1|7.72| |C2|0.65| |C3|4.16| |G|0.20| **----- End of picture text -----**<br> 5 of 6 **www.diodes.com** DMP2035UTS Document number: DS31940 Rev. 3 - 2 January 2010 © Diodes Incorporated **DMP2035UTS** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated **www.diodes.com** 6 of 6 **www.diodes.com** DMP2035UTS Document number: DS31940 Rev. 3 - 2 January 2010 © Diodes Incorporated
Updated at June 9, 2026
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