DMP2004VK-7

**DMP2004VK** Cd **DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|-20V|0.9Ω @ VGS= -4.5V|-0.53A|
||1.4Ω @ VGS= -2.5V|-0.44A|



## **Features** 

- Dual P-Channel MOSFET 

- Low On-Resistance 

- Very Low Gate Threshold Voltage VGS(TH) < 1V 

- Low  Input Capacitance 

- Fast Switching Speed 

- Low  Input/Output Leakage 

- ESD Protected Gate 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: SOT563 

## **Applications** 

- Battery Charging 

- Power Management Functions 

- DC-DC Converters 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

 Portable Power Adaptors  Weight: 0.006 grams (Approximate) 

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SOT563<br>D1 D2 D2 G1 S1<br>G1 G2<br>ESD PROTECTED hee © Gate Protection Diode S1 O Gate Protection Diode S2 L S2 G2 D1<br>Top View  Bottom View  Q1 P-CHANNEL  Q2 P-CHANNEL  Top View<br>MOSFET  MOSFET  Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP2004VK-7|SOT563|3,000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**SOT563** PAB = Marking Code YM = Date Code Marking **PAB YM** Y = Year (ex: U = 2007) M = Month (ex: 9 = September) ove Date Code Key **Year 2007 …. 2015 2016 2017 2018 2019 2020 2021 Code** U …. C D E F G H I ~~[_———} ———} | +} — } — } —} —_~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~[+ —} — + —_} — | —_ +} —_+—_ + —_ }—_ } — }—_~~ DMP2004VK 1 of 6 July 2015 Document number: DS30916 Rev. 7 - 2 **www.diodes.com** © Diodes Incorporated 

July 2015 © Diodes Incorporated 

**DMP2004VK** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25C<br>TA= +70C|ID|-0.53<br>-0.44|A|
|Continuous Drain Current (Note 5) VGS= -2.5V|Steady<br>State|TA= +25C<br>TA= +70C|ID|-0.44<br>-0.35|A|
|Pulsed Drain Current(Note 6)|||IDM|-1.8|A|



## **Thermal Characteristics** 

|**Thermal Characteristics **||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 5)|PD|400|mW|
|Thermal Resistance,Junction to Ambient|RθJA|312|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-65 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~a~~|||||||
|Drain-Source Breakdown Voltage<br>~~————~~|BVDSS<br>~~————~~<br>~~a~~|-20<br>~~————~~|<br>~~————~~|<br>~~————~~|V<br>~~————~~|VGS= 0V,ID= -250µA<br>~~————~~|
|Zero Gate Voltage Drain Current<br>~~————~~|IDSS<br>~~————~~<br>~~a~~|<br>~~————~~|<br>~~————~~|-1.0<br>~~————~~|µA<br>~~————~~|VDS= -20V,VGS= 0V<br>~~————~~|
|Gate-Source Leakage<br>~~————~~|IGSS<br>~~————~~<br>~~a~~|<br>~~————~~|<br>~~————~~|1.0<br>~~————~~|µA<br>~~————~~|VGS=4.5V,VDS= 0V<br>~~————~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~a~~<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~<br>~~|~~|-0.5<br>~~ee~~<br>~~||~~|<br>~~ee~~<br>~~||~~|-1.0<br>~~ee~~<br>~~||~~|V<br>~~ee~~<br>~~|~~|VDS= VGS,ID= -250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~pT~~|RDS(ON)<br>~~pT~~<br>~~|~~|<br>~~pT~~<br>~~||~~|0.7<br>1.1<br>1.7<br>~~pT~~<br>~~||~~|0.9<br>1.4<br>2.0<br>~~pT~~<br>~~||~~|Ω<br>~~pT~~<br>~~|~~|VGS= -4.5V,ID= -430mA<br>~~pT~~|
|||||||VGS= -2.5V,ID= -300mA<br>~~pT~~|
|||||||VGS= -1.8V,ID= -150mA<br>~~pT~~|
|Forward Transfer Admittance<br>~~pT~~||Yfs|<br>~~pT~~<br>~~|~~|200<br>~~pT~~<br>~~||~~|<br>~~pT~~<br>~~||~~|<br>~~pT~~<br>~~||~~|mS<br>~~pT~~<br>~~|~~|VDS= -10V,ID= -0.2A<br>~~pT~~|
|Diode Forward Voltage(Note 5)|VSD<br>~~|~~|-0.5<br>~~| |~~|<br>~~| |~~|-1.2<br>~~| |~~|V<br>~~|~~|VGS= 0V,IS= 115mA|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance|Ciss|||175|pF|VDS= -16V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance|Coss|||30|pF||
|Reverse Transfer Capacitance|Crss|||20|pF||



- Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 

   6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

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DMP2004VK Document number: DS30916 Rev. 7 - 2 

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**DMP2004VK** | 

## LIVES. 

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DMP2004VK Document number: DS30916 Rev. 7 - 2 

July 2015 

© Diodes Incorporated 

**DMP2004VK** [| 

## Lr. 

TA, AMBIENT TEMPERATURE (°C) Fig. 7  Static Drain-Source On-State Resistance vs. Ambient Temperature 

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-ID, DRAIN-CURRENT (A)<br>Fig. 9  Forward Transfer Admittance vs. Drain-Current<br>**----- End of picture text -----**<br>


- -VDS, SOURCE-DRAIN VOLTAGE (V) 

- Fig. 8  Reverse Drain Current vs. Source-Drain Voltage 

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-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10  Typical Capacitance<br>**----- End of picture text -----**<br>


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DMP2004VK Document number: DS30916 Rev. 7 - 2 

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**DMP2004VK** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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SOT563<br>A<br>4<br>SOT563<br>iT ) Dim  Min  Max  Typ<br>B C A  0.15 0.30 0.20<br>B  1.10 1.25 1.20<br>C  1.55 1.70 1.60<br>D  -  -  0.50<br>D G  0.90  1.10  1.00<br>G H  1.50  1.70  1.60<br>K  0.55  0.60  0.60<br>L  0.10  0.30  0.20<br>K M M  0.10  0.18  0.11<br>: = All Dimensions in mm<br>to Ne<br>H<br>el L<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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C2 C2 SOT563<br>Kae<br>e G ee C1<br>Z<br>Y<br>Poot<br>X<br>kk ><br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**Z**|**()**<br>2.2|
|**G**|1.2|
|**X**|0.375|
|**Y**|0.5|
|**C1**|1.7|
|**C2**|0.5|



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DMP2004VK Document number: DS30916 Rev. 7 - 2 

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**DMP2004VK** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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DMP2004VK Document number: DS30916 Rev. 7 - 2 

July 2015 © Diodes Incorporated