DMP1046UFDB-7

**DMP1046UFDB** Cd **DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**BVDSS**|**RDS(ON) MAX**|**ID MAX**<br>**TA = +25°C**|
|P-Channel|-12V|61mΩ@VGS= -4.5V|-3.8A|
|||81mΩ@VGS= -2.5V|-3.3A|
|||115mΩ@VGS= -1.8V|-2.8A|



## **Features** 

- Low On-Resistance 

- Low Input Capacitance 

- Low Profile, 0.6mm Max Height 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

- Load Switch 

- Power Management Functions 

   - Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

   - Terminals Connections: See Diagram Below 

   - Weight: 0.0065 grams (Approximate) 

- Portable Power Adaptors 

U-DFN2020-6 (Type B) 

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D1 D2<br>S2<br>G2<br>D2<br>D1<br>D2  D1  G1 G2<br>G1<br>S1<br>Pin1  S1 S2<br>Internal Schematic<br>Bottom View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMP1046UFDB-7|U-DFN2020-6(Type B)|3,000/Tape & Reel|
|DMP1046UFDB-13|U-DFN2020-6 (TypeB)|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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## **Marking Information** 

Site 1 

P6 = Product Type Marking Code YM = Date Code Marking **P6** Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key **Year 2015 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~es~~ **Code** C … H ~~ee~~ I ~~ee~~ J ~~ee~~ K ~~ee~~ L ~~ee~~ M ~~ee~~ N ~~ee~~ O ~~ee~~ P R **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 ~~ee~~ 6 ~~ee~~ 7 8 ~~ee~~ 9 ~~ee~~ O ~~oe~~ N D Site 2 

P6 = Product Type Marking Code YWX = Date Code Marking **P6 O7** Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) 

Date Code Key **Year 2015 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~——se~~ **Code** ~~es~~ 5 … 0 1 2 3 4 ~~ee~~ 5 ~~ee~~ 6 ~~ee~~ 7 ~~ee~~ 8 ~~es~~ 9 **Week 1-26 27-52 53** ~~ee~~ **Code** A-Z a-z z **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~—ee~~ **Code** T U V W X Y Z 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.8<br>-3.0|A|
||t < 5s|TA= +25°C<br>TA= +70°C|ID|-5.0<br>-4.0|A|
|Maximum Continuous BodyDiode Forward Current(Note 5)|||IS|-1|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-15|A|
|Avalanche Current(L = 0.1mH)|||IAS|-12|A|
|Avalanche Energy (L = 0.1mH)|||EAS|8|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|SteadyState|PD|1.4|W|
||t < 5s||2.2||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|92|°C/W|
||t<5s||55||
|Thermal Resistance,Junction to Case(Note 5)||RJC|20||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to 150|°C|



Note: 5. Device mounted on 1”  1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6)** Drain-Source Breakdown Voltage BVDSS -12 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 μA VDS = -12V, VGS = 0V ~~SSS~~ Gate-Source Leakage IGSS — — ±100 nA VGS = ±8V, VDS = 0V **ON CHARACTERISTICS (Note 6)** Gate Threshold Voltage VGS(TH) -0.4 — -1 V VDS = VGS, ID = -250μA ~~———————~~ — 37 61 VGS = -4.5V, ID = -3.6A Static Drain-Source On-Resistance RDS(ON) — 47 81 mΩ VGS = -2.5V, ID = -3.2A — 63 115 VGS = -1.8V, ID = -1.0A ~~eS~~ Diode Forward Voltage VSD — -0.65 -1.2 V VGS = 0V, IS = -4.5A **DYNAMIC CHARACTERISTICS (Note 7)** Input Capacitance Ciss — 915 — pF Output Capacitance Coss — 225 — pF VDS = -6V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss — 183 — pF ~~Sa~~ Gate Resistance Rg — 56.9 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) — 10.7 — nC Total Gate Charge (VGS = -8V) Qg — 17.9 — nC Gate-Source Charge Qgs — 1.7 — nC VDS = -6V, ID = -4.3A Gate-Drain Charge Qgd — 3.0 — nC Turn-On Delay Time tD(ON) — 5.7 — ns ~~SS~~ Turn-On Rise Time ~~a~~ tR — 11.5 ~~eeee~~ — ns VDD = -6V, VGS = -4.5V, ~~**e**~~ Turn-Off Delay Time tD(OFF) — 27.8 — ns RL = 1.6Ω, RG = 1Ω ~~et~~ Turn-Off Fall Time tF — 26.4 — ns Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 

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10 20<br>VGS = -2.0V VGS = -1.8V<br>9 [Lf eee 18 V DS  = -5.0V fe<br>8 | <i 16 ee<br>[A)] VGS = -2.5V<br>T [(] 7 HDC™ VGS = -3.0V || 14 ee eee<br>[N] E<br>R<br>RU 6 VGS = -4.5V 12<br>CN 5 VGS = -8.0V 10<br>RA [I] 4 VGS = -1.5V 8<br>D<br>TA  = 150°C<br>I [,] D 3 Po 6 eee eee<br>2 4 TA  = 125°C TA = 85°C<br>TA  = 25°C<br>1 2<br>0 VGS = -1.2V 0 TA  = -55°C<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>-VDS , DRAIN-SOURCE VOLTAGE (V) V-VGSGS, GATE-SOURCE VOLTAGE (V), GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.1 0.5<br>0.09 VGS  = -1.8V 0.45<br>0.4 ID = -3.6A<br>0.08 tt TLCEELLL<br>oA<br>0.35<br>0.07<br>BVAGEREEEE Cole<br>0.3<br>0.06<br>MGREEREEA VGS = -2.5V 0.25 TTP to<br>0.05 [tit tee 0.2 TLEELELE<br>0.04 0.15 ID = -3.2A<br>Bae VGS = -4.5V 0.1 PP<br>0.03<br>TCE | 0.05 Ns<br>0.021 3 5 7 9 11 13 15 17 19 21 0 ID = -1A<br>-II DD, DRAIN SOURCE CURRENT (A) , DRAIN SOURCE CURRENT (A) 1 2 3 4 5 6 7 8<br>Figure 3 Typical On-Resistance vs.  -VGS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage  Figure 4 Typical Transfer Characteristics<br>0.05 1.4<br>VGS = -4.5V<br>1.3<br>0.045 TA = 150°C<br>ue TA  = 125°C SEO 1.2 A4<br>0.04 T A  = 85°C<br>1.1<br>tt CC ar<br>0.035 T A  = 25°C 1 VGS = -4.5V<br>ID = -5A<br>0.03 TAA TA = -55°C EEE EE 0.9 Pertan<br>VGS  = -2.5V<br>0.8 I D  = -3.0A<br>0.025<br>linen 0.7 es<br>0.02<br>1 EEL 3 5 7 9 LEEEE 11 13 15 17 19 21 0.6 Seana<br>-IIDD, DRAIN CURRENT (A) , DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs.  TJ, JUNCTION TEMPERATURE ( C)<br>Drain Current and Temperature  Figure 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I , DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>I<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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0.07 1<br>0.9<br>0.06<br>To VGS  = -2.5V 0.8 =6ee -I D = 1mA<br>ID = -3A<br>= SA<br>0.05 0.7 -ID = 250µA<br>oer] = 0.6 BREE<br>0.04 CET Te V GS  = -4.5V 0.5 SK<br>ID = -5A<br>att CTS<br>0.4<br>0.03 pase CTE TENS<br>0.3<br>0.02 TTT TTT 0.2 COEPit] {|}EEtts<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate ThFigure 8 Gate Th resh old Variation vs. Ambient Temperatuold Variation vs. Junction Tempe r eature<br>20 10000<br>18 f = 1MHz<br>| fff =<br>16 TA= 150°C<br>14 —— T A = 125°C Hh 1000 EE ES Ciss<br>12<br>ee’ | ——$____—<br>10<br>C oss<br>ee ao SSS<br>8 T A = 85°C 100 Crss<br>6 a ||[] | |—_—<br>4 T A = 25°C<br>2 ey| ===eeeeee<br>TA= -55°C<br>0 10<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12<br>V-VSDSD , S OUOU RCE- DRAIN VOLTAGE V) DRAIN VOLTAGE  ( V) -VVDSDS, DRAIN-SOURCE VOLTAGE (V) , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>8 100<br>RRDDS(on)S(ON)<br>LL imi tt e dd<br>6 VIDDS = -4.3A = -6V 10<br>DC<br>4 1<br>PW = 10s<br>PW = 1s<br>P W  = 100ms<br>2 0.1 T J(m ax)  = 150°C P W  = 10ms<br>TA = 25°C PW = 1ms<br>VVGS GS   = 4.5V= -4.5V  PW = 100µs<br>Single Pulse<br>0 0.01 DUT on 1 * MRP Board LN<br>0 5 10 15 20 0.01 0.1 1 10 100<br>Q g, TOTAL GATE CHARGE (nC) -VVDSDS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>-V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>S<br>, SOURCE CURRENT (A)<br>I<br>DS(on)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>D<br>, DRAIN CURRENT (A)<br>I<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>**----- End of picture text -----**<br>


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Iu cORPORATE D®<br>**----- End of picture text -----**<br>


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1 je NS A A A OO ee i A<br>D = 0.9<br>FEE _&X&EEEEEEEEE&~—_ZE—E—=:=_=_ SSS oo<br>Do D = 0.7 LETTEee To te PTF ET ray<br>D = 0.5 mT TTT<br>by [Co] ee ™ ce ee<br>LE D = 0.3 STTENT TTT ery)BemeETE TTT ETTet<br>LA<br>0.1 asre D = 0.1 [AO] EEeee,OO ee OeeeeeeOO| HHceasesEpep0leOOeeeOQh e e centAOe GGSc EEaOGSE GGEtOOOO TTTGOGOEH<br>e<br>D = 0.05 me ic ci<br>emer | mE<br>Ce ee ee<br>ST D = 0.02  ET<br>0.01 PAM EEO) TTT | TUTTE ELLIE EI TITEL<br>D = 0.01<br>FO Sara Se Sr sctfceeesnn islet a aiiteeses nsosi et erases esses eet<br>a a ce 7 OO Oe 0 Oe OO OO GG GOO OO OO<br>eee D = 0.005 | LP a<br>I R θJA thja (t) (t) = r(t) = r(t) * R*θJA R thja ill<br>eT P PE fla I TR R R θJA = 171  = 171°C/W ℃/W  lt<br>D = Single Pulse Duty Cycle, D = t1 / t2 Duty Cycle, D = t1/ t2 thja<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP1046UFDB** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type B)** 

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A3<br>A1<br>A<br>Seating Plane<br>eat<br>D<br>D2 D2<br>z1<br>E z1 E2<br>k<br>L<br>e<br>z<br>b<br>(Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br>


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U-DFN2020-6<br>Type B<br>Dim  Min  Max  Typ<br>A  0.545 0.605 0.575<br>A1  0.00 0.05 0.02<br>A3  -  -  0.13<br>b 0.20 0.30 0.25<br>D  1.95 2.075 2.00<br>D2  0.50 0.70 0.60<br>e  -  -  0.65<br>E  1.95 2.075 2.00<br>E2  0.90 1.10 1.00<br>k  -  -  0.45<br>L  0.25 0.35 0.30<br>z  -  -  0.225<br>z1  -  -  0.175<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type B)** 

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X2<br>C<br>4<br>X1(2x)<br>Y2 Y1(2x)<br>G<br>G1<br>Y<br>X<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**G**|0.150|
|**G1**|0.450|
|**X**|0.350|
|**X1**|0.600|
|**X2**|1.650|
|**Y**|0.500|
|**Y1**|1.000|
|**Y2**|2.300|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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DMP1046UFDB Document number: DS37712 Rev. 3 - 2 

January 2020 © Diodes Incorporated