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DMNH6042SSDQ-13
Dual MOSFET, N Channel, 60 V, 60 V, 16.7 A, 16.7 A, 0.05 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 2.1W
- Power Dissipation P Channel: 2.1W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 16.7A
- Continuous Drain Current Id P Channel: 16.7A
- Drain Source On State Resistance N Channel: 0.05ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.458 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMNH6042SSDQ** ~~7~~ **60V DUAL N-CHANNEL 175°C MOSFET** ## DIODES. ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---| |||| |**V(BR)DSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**| |60V|50mΩ @ VGS= 10V|16.7A| ||65mΩ @ VGS= 4.5V|14.6A| ## **Features and Benefits** - Rated to +175°C – Ideal for High Ambient Temperature Environments - 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application - Low RDS(ON) – Minimizes Power Losses - Low QG – Minimizes Switching Losses - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** - **PPAP Capable (Note 4)** ## **Description and Applications** This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ## **Mechanical Data** - Case: SO-8 - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Engine Management Systems - Body Control Electronics - DC-DC Converters - Terminal Connections Indicator: See Diagram - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.076 grams (Approximate) **==> picture [20 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>**----- End of picture text -----**<br> **==> picture [201 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> S1 D1<br>G1 D1<br>S2 D2<br>G2 D2<br>Top View Top View<br>Pin Configuration<br>**----- End of picture text -----**<br> **==> picture [182 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>S1 S2<br>Equivalent Circuit<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 5) |**Part Number**|**Case**|**Packaging**| |---|---|---| |DMNH6042SSDQ-13|SO-8|2,500/Tape &Reel| Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [73 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>8 5<br>H6042SD<br>YY WW<br>1 4<br>**----- End of picture text -----**<br> = Manufacturer’s Marking H6042SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 – 53) 1 of 7 **www.diodes.com** DMNH6042SSDQ Document number: DS37829 Rev. 4 - 2 August 2016 © Diodes Incorporated **DMNH6042SSDQ** ## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||| |---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|60|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 7) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|5.3<br>4.4|A| ||Steady<br>State|TC= +25°C<br>TC= +100°C|ID|16.7<br>14|A| |Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|35|A| |Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|2.3|A| |Avalanche Current(Note 8)L = 10mH|||IAS|3.5|A| |Avalanche Energy (Note 8)L = 10mH|||EAS|65|mJ| ## **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation(Note 6)||PD|1.5|W| |Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|100|°C/W| ||t<10s||61|| |Total Power Dissipation(Note 7)||PD|2.1|W| |Thermal Resistance, Junction to Ambient (Note 7)|Steady State|RθJA|72|°C/W| ||t<10s||44|| |Thermal Resistance,Junction to Case(Note 7)||RθJC|7.25|| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C| ## **Electrical Characteristics** (@TA= +25°C, unless otherwise specified.) |**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)A= +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)A= +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)A= +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)A= +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)A= +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)A= +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)A= +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS**(Note 9)||||||| |Drain-Source Breakdown Voltage|BVDSS|60|—|—|V|VGS= 0V,ID= 250μA| |Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1|µA|VDS= 60V,VGS= 0V| |Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V| |**ON CHARACTERISTICS**(Note 9)||||||| |Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1.0<br>~~ee~~|—<br>~~ee~~|3.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~| |Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|34<br>~~ee~~|50<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 5.1A<br>~~ee~~| |||—<br>~~ee~~|45<br>~~ee~~|65<br>~~ee~~||VGS= 4.5V,ID= 4.4A<br>~~ee~~| |Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.8<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 2.6A<br>~~ee~~| |**DYNAMIC CHARACTERISTICS**(Note 10)||||||| |Input Capacitance<br>~~———~~|CISS<br>~~———~~|—<br>~~———~~|584<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~| |Output Capacitance<br>~~———~~|COSS<br>~~———~~|—<br>~~———~~|83<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|| |Reverse Transfer Capacitance<br>~~———~~|CRSS<br>~~———~~|—<br>~~———~~|24<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|| |Gate Resistance<br>~~———~~<br>~~———~~|RG<br>~~———~~|—<br>~~———~~|3.8<br>~~———~~|—<br>~~———~~<br>~~ee~~|Ω<br>~~———~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~eee~~| |Total Gate Charge(VGS= 4.5V)<br>~~———~~|QG|—|4.2|—<br>~~ee~~|nC<br>~~ee~~|VDS= 44V, ID= 5.2A<br>~~eee~~<br>~~ee~~| |Total Gate Charge(VGS= 10V)<br>~~———~~|QG|—|8.8|—<br>~~ee~~|nC<br>~~ee~~|| |Gate-Source Charge<br>~~———~~|QGS|—|1.8|—<br>~~ee~~|nC<br>~~ee~~|| |Gate-Drain Charge<br>~~———~~<br>~~——_—~~|QGD|—|1.8|—<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|| |Turn-On DelayTime<br>~~———~~<br>~~——_—~~|tD(ON)|—|3.4|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VGS= 10V, VDS= 30V,<br>RG= 6Ω, ID= 1A<br>~~eee~~<br>~~ee~~<br>~~Me~~| |Turn-On Rise Time<br>~~———~~<br>~~——_—~~|tR|—|1.9|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|| |Turn-Off DelayTime<br>~~——_—~~|tD(OFF)|—|10.1|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~——_—~~|tF|—|4.5<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~eee Me~~|| |Body Diode Reverse Recovery Time<br>~~——_—~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|12.9<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~eee Me~~|IF= 2.6A, di/dt = 100A/μs<br>~~ee~~<br>~~ee~~<br>~~Me~~| |Body Diode Reverse Recovery Charge<br>~~——_—~~<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|5.4<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~<br>~~eee Me~~|| 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 **www.diodes.com** DMNH6042SSDQ Document number: DS37829 Rev. 4 - 2 August 2016 © Diodes Incorporated **DMNH6042SSDQ** **==> picture [491 x 669] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 30<br>VGS = 8V VGS = 5V VDS = 5V<br>25.0 25<br>20.0 | VGS = 10V VGS = 4.5V 20<br>15.0 [f/f A—e 15 es ae<br>10.0 | VGS = 4.0V 10 TJ = 175 [o] C<br>A one TJ = 150 [o] C ae<br>5.0 5 TJ = 125 [o] C TJ = 25 [o] C<br>VGS = 3.3V TJ = 85 [o] C<br>TJ = -55 [o] C<br>0.0 0<br>0 1 2 3 4 5 1 2 3 4 5 6<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.08 0.1<br>EER 0.09 ppt<br>0.07<br>0.08 ID = 5.1A<br>0.06<br>PAE) 0.07 ty ty tt<br>0.05 V GS = 4.5V<br>0.06<br>0.04 ee V GS = 10V 0.05 FR EE<br>ptt eee<br>0.03 eo TTtt 0.04 CEPA E<br>0.02 eee 0.03 PN<br>ID = 4.4A<br>0.01 PT 0.02 r r<br>0.01<br>0<br>PTTL 0 2 4 6 8 ETT 10 12 Ty 14 16 18 20 2 pitt 4 6 8 10 ti it 12 14 16 | 18 20<br>I DFig. 3 Typical On-Resistance vs. , DRAIN SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage Figure 4. Typical Transfer Characteristic<br>0.08 2.4<br>VGS = 10V TJ = 175 [o] C 2.2<br>0.07 eT pa VGS = 10V, ID = 5.1A<br>2<br>0.06 ( t 1.8 e<br>0.05 O TJ = 150 [o] C TJ = 125 [o] C N 1.6<br>1.4<br>7 TJ = 85 [o] C Sena<br>0.04<br>1.2<br>a 2<br>0.03 TJ = 25 [o] C 1 VGS = 4.5V, ID = 4.4A<br>0.8<br>S e |e<br>0.02 pf<br>0.6<br>| | yy TJ = -55 [o] C afTTT<br>0.01 i 0.4 PEE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs Drain Current and Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>(<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>**----- End of picture text -----**<br> 3 of 7 **www.diodes.com** DMNH6042SSDQ Document number: DS37829 Rev. 4 - 2 August 2016 © Diodes Incorporated **DMNH6042SSDQ** **==> picture [237 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1<br>0.09 P| Tey tT tt<br>0.08 BERRA<br>0.07 VGS = 4.5V, ID = 4.4A<br>0.06 FooseZO<br>0.05<br>0.04 aan ae<br>aa eee<br>0.03<br>Tipe<br>0.02 VGS = 10V, ID = 5.1A<br>0.01 poe| | |<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [227 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>2.6 mt | | | | | yt<br>2.4 Ne<br>2.2 ID = 1mA<br>2 ER SEA<br>1.8<br>ID = 250µA<br>1.6 ee EE NAA<br>| | NN<br>1.4<br>Pt; | | hd] dT dT UNGN<br>1.2<br>1 eeePt tT tT tT tT Tt tt<br>-50 -25 0 25 50 75 100 125 150 175<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> TJ, JUNCTION TEMPERATURE ( ℃ ) Figure 8. Gate Threshold Variation vs Junction Temperature **==> picture [486 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> 30 1000<br>VGS = 0V f = 1MHz<br>25 C U<br>Ciss<br>20 ee<br>15 TA = 175 [o] C 100 Coss<br>TA = 150 [o] C<br>10 TA = 125 [o] C<br>TA = 85 [o] C Crss<br>5 TA = 25 [o] C<br>Hi] | C P S<br>TA = -55 [o] C<br>0 ZT) | 10 PET EEE EEE<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 30 35 40 45 50 55 60<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 100<br>RDS(ON) PW = 1ms<br>Limited PW = 100µs<br>8<br>10<br>6<br>1 DC<br>4 PW = 10s<br>VDS = 44V, ID = 5.2A 0.1 TJ(Max) = 175 ℃ PW = 1s<br>2 TC = 25 ℃ PW = 100ms<br>Single Pulse<br>DUT on 1*MRP Board PW = 10ms<br>VGS = 10V<br>0 0.01<br>0 2 4 6 8 10 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 4 of 7 **www.diodes.com** DMNH6042SSDQ Document number: DS37829 Rev. 4 - 2 August 2016 © Diodes Incorporated **DMNH6042SSDQ** **==> picture [415 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>ee<br>D=0.9<br>e D=0.5 e D=0.7 NC oo<br>ET | Tl<br>D=0.3<br>LUT TUN TT err TANI EIT<br>0.1 e I IAEEET<br>a a a0”<br>D=0.1 [EH] Ee<br>FeA [ECT] ae/aa 0 ee<br>D=0.05<br>A lf |<br>eee D=0.02 ai N/AAT (RBG ARRLTTI GRR TRERATLI REAR RBA<br>_Y<br>0.01 s n TT AL<br>D=0.01<br>Bo SHAH eH et rth<br>e ct<br>re a |<br>f D=0.005 h VT VV RθJA (t) = r(t) * R TV θJA |<br>RθJA = 100 ℃ /W<br>Duty Cycle, D = t1/t2<br>D=Single Pulse<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 5 of 7 **www.diodes.com** DMNH6042SSDQ Document number: DS37829 Rev. 4 - 2 August 2016 © Diodes Incorporated **DMNH6042SSDQ** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **SO-8** **==> picture [507 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>Dim Min Max Typ<br>E<br>=== A 1.40 1.50 1.45<br>A1 0.10 0.20 0.15<br>1 b 0.30 0.50 0.40<br>c 0.15 0.25 0.20<br>D 4.85 4.95 4.90<br>E 5.90 6.10 6.00<br>b E1 3.80 3.90 3.85<br>E1<br>E0 3.85 3.95 3.90<br>h e – – 1.27<br>Q<br>h – – 0.35<br>7°<br>L 0.62 0.82 0.72<br>c<br>Q 0.60 0.70 0.65<br>A 4°±3° All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 es E0<br>D<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SO-8<br>X1<br>Dimensions Value (in mm)<br>C 1.27<br>Y1 X 0.802<br>X1 4.612<br>Y 1.505<br>he == Y1 6.50<br>Y<br>O00E C X<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout ested Pad Layout yout out** Please see http://www.diodes.com/package-outlines.html for the latest version. 6 of 7 **www.diodes.com** DMNH6042SSDQ Document number: DS37829 Rev. 4 - 2 August 2016 © Diodes Incorporated **DMNH6042SSDQ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated **www.diodes.com** 7 of 7 **www.diodes.com** DMNH6042SSDQ Document number: DS37829 Rev. 4 - 2 August 2016 © Diodes Incorporated
Updated at June 9, 2026
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