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DMNH6042SPDQ-13
Dual MOSFET, N Channel, 60 V, 60 V, 24 A, 24 A, 0.05 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: PowerDI5060
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 2.5W
- Power Dissipation P Channel: 2.5W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 24A
- Continuous Drain Current Id P Channel: 24A
- Drain Source On State Resistance N Channel: 0.05ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.416 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMNH6042SPDQ 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|60V|50mΩ@VGS= 10V|24A|
||65mΩ@VGS= 4.5V|21A|
## **Features and Benefits**
- Rated to +175°C—Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching—Ensures More Reliable and Robust End Application
- Low RDS(ON)—Minimizes Power Losses
- Low QG—Minimizes Switching Losses
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Description and Applications**
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
## **Mechanical Data**
- Case: PowerDI[®] 5060-8 (Type C)
- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 3 per J-STD-020
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
- Terminal Connections Indicator: See Diagram
- Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.097 grams (Approximate)
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D1 D2<br>~~ S1 I | D1<br>~~<br>G1 L | D1<br>S2 I| D2 G1 G2<br>Pin1 G2 I | D2 S1 S2<br>Top View Bottom View Pin Out Equivalent Circuit<br>Top View<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 5)
|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMNH6042SPDQ-13|PowerDI5060-8 (Type C)|2500/Tape &Reel|
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
air = Manufacturer’s Marking H6042SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53)
_PowerDI is a registered trademark of Diodes Incorporated._ DMNH6042SPDQ Document number: DS37388 Rev. 6 - 2
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**DMNH6042SPDQ**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|5.7<br>4.6|A|
|Continuous Drain Current (Note 8) VGS= 10V|Steady<br>State|TC= +25°C<br>TC= +100°C|ID|24<br>17|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|32|A|
|Maximum Continuous BodyDiode Forward Current (Note 8)|||IS|24|A|
|Avalanche Current (Note 9) L = 10mH|||IAS|3.5|A|
|Avalanche Energy (Note 9) L = 10mH|||EAS|65|mJ|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)||PD|1.2|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RϴJA|105|°C/W|
||t<10s||54||
|Total Power Dissipation (Note 7)||PD|2.5|W|
|Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RϴJA|51|°C/W|
||t<10s||26||
|Thermal Resistance, Junction to Case (Note 8)||RϴJC|3.5||
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +175|°C|
- Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
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**DMNH6042SPDQ**
## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 10)|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|VDS= 60V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 10)<br>~~a~~<br>~~GOOO~~|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)|1.0|—<br>~~GO~~|3.0<br>~~GO~~|V<br>~~GO~~|VDS= VGS, ID= 250μA<br>~~OO~~|
|Static Drain-Source On-Resistance<br>~~a~~<br>~~ee~~<br>~~———~~|RDS(ON)<br>~~ee~~<br>~~rr~~|—<br>~~ee~~<br>~~rr~~|34<br>~~GO~~<br>~~ee~~<br>~~rr~~|50<br>~~GO~~<br>~~ee~~<br>~~rr~~|mΩ<br>~~GO ~~<br>~~ee~~|VGS= 10V, ID= 5.1A<br> ~~OO~~<br>~~ee~~|
|||—<br>~~ee~~<br>~~rr~~|45<br>~~ee~~<br>~~rr~~|65<br>~~ee~~<br>~~rr~~||VGS= 4.5V, ID= 4.4A<br>~~ee~~|
|Diode Forward Voltage<br>~~———~~|VSD<br>~~rr~~|—<br>~~rr~~|0.8<br>~~rr~~|1.2<br>~~rr~~|V|VGS= 0V, IS= 2.6A|
|**DYNAMIC CHARACTERISTICS**(Note 11)<br>~~———rr~~|||||||
|Input Capacitance<br>~~———~~<br>~~a~~|CISS<br>~~rr~~<br>~~a~~|—<br>~~rr~~<br>~~a~~|584<br>~~rr~~<br>~~a~~|—<br>~~rr~~<br>~~a~~|pF<br>~~a~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~——— ~~<br>~~pO~~|COSS<br> ~~rr~~|—<br>~~rr~~|83<br>~~rr~~|—<br>~~rr~~|pF||
|Reverse Transfer Capacitance|CRSS|—|24|—|pF||
|Gate Resistance<br>~~—<———_—~~|RG|—|3.8|—<br>~~e~~|Ω<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~—<———_—~~|QG|—|4.2|—<br>~~e~~|nC<br>~~e~~|VDS= 44V, ID= 5.2A<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~—<———_—~~|QG|—|8.8|—<br>~~e~~|nC<br>~~e~~||
|Gate-Source Charge<br>~~—<———_—~~|QGS|—|1.8|—<br>~~e~~|nC<br>~~e~~||
|Gate-Drain Charge<br>~~—<———_—~~|QGD|—|1.8|—<br>~~e~~|nC<br>~~e~~||
|Turn-On DelayTime<br>~~—<———_—~~|tD(ON)|—|3.4|—<br>~~e~~|ns<br>~~e~~|VGS= 10V, VDS= 30V,<br>RG= 6Ω, ID= 1A<br>~~ee~~|
|Turn-On Rise Time<br>~~—<———_—~~|tR|—|1.9|—<br>~~e~~|ns<br>~~e~~||
|Turn-Off DelayTime<br>~~ES~~|tD(OFF)<br>~~ES~~|—<br>~~ES~~|10.1<br>~~ES~~|—<br>~~ES~~|ns<br>~~ES~~||
|Turn-Off Fall Time<br>~~ES~~|tF<br>~~ES~~|—<br>~~ES~~|4.5<br>~~ES~~|—<br>~~ES~~|ns<br>~~ES~~||
|Body Diode Reverse Recovery Time<br>~~ES~~|tRR<br>~~ES~~|—<br>~~ES~~|12.9<br>~~ES~~|—<br>~~ES~~|ns<br>~~ES~~|IF= 2.6A, di/dt = 100A/μs|
|Body Diode Reverse Recovery Charge<br>~~ES~~|QRR<br>~~ES~~|—<br>~~ES~~|5.4<br>~~ES~~|—<br>~~ES~~|nC<br>~~ES~~|IF= 2.6A, di/dt = 100A/μs|
Notes: 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing.
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**DMNH6042SPDQ** [CT
## LIVES.
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20 20<br>VGS = 10V<br>18 V = 5.0VDS<br>ye VGS = 5.0V )<br>16 oo) See eee |<br>VGS = 4.5V VGS = 4.0V )A 15<br>14 2 (T |<br>N<br>12 E<br>R<br>R<br>10 aYY U 10 cera|<br>C<br>N<br>8 |oe VGS = 3.5V IAR<br>D<br>6<br>jf ,I D 5 T = 175°CA J<br>4 T = 150°CA T = 85°CA<br>2 Yoofo VGS = 2.8V VGS = 3.0V T = 125°CA fffy T = 25°CA<br>T = -55°CA<br>0 _—— 0 yy,<br>0 1 2 3 4 5 1 2 3 4 5 6<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.08 0.08<br>Ω)( 0.075 V = 10VGS T = 175°CA<br>0.07 PTT TT LTT ECN 0.07 Co T = 150°CA LE<br>A<br>0.06 TS 0.065<br>TET ETT IS 0.06 SE T = 125°CA ee<br>E<br>0.05 {pe V GS = 4.5V R-NO 0.0550.05 See T = 85°CA<br>0.04 V GS = 10V EC 0.045<br>eet tt FL R eae<br>U 0.04<br>0.03 O<br>pane eee S-N 0.035 oa T = 25°CA<br>0.02 PLL TELE Ey IA 0.03 SEH<br>R<br>D 0.025<br>0.01 PTT TTT , )NO 0.02 } ipfg T = -55°CA<br>(S<br>0 RD 0.015<br>0 2 4 6 8 10 12 14 16 18 20<br>TET TT ET Ey 0.01 Te<br>I D, DRAIN SOURCE CURRENT (A) 1 3 5 7 9 11 13 15 17 19 21<br>Fig. 3 Typical On-Resistance vs. I , DRAIN CURRENT (A)D<br>Drain Current and Gate Voltage<br>Figure 4 Typical On-Resistance vs.<br>Drain Current and Temperature<br>2.4 0.1<br>2.2<br>PT Te tT et yt to 0.09 Pf | tt tt ty<br>2 VIDGS= 5.1A 10= V 0.08<br>1.8 Seeeenee/, 2 VGS = 4.5V<br>1.6 FEE, 2 VGS = 4.5V 0.07 44+ I D = 4.4A<br>1.4 See e ms ID = 4.4A 0.06 PToe Y<br>1.2 mr 0.05 tT tT PE ee<br>a annem VGS 10= V<br>1 0.04 ID = 5.1A<br>0.8 ae a PAPA<br>0.03<br>> ene a<br>0.6<br>i 0.02 ee<br>0.4<br>PrFPrrtyreyyFEESyi 0.01 <A<br>0.2<br>0 FEPEPEELELE SL] 0 Pt | tt tt yt<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>) )<br>Ω Ω<br>,DRAIN-SOURCE ON-RESISTANCE( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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2.5 Ne<br>~~<br>2.2 QA<br>KO<br>ID = 1mAD = 1mA = 1mA<br>1.9 SAANAN<br>ID = 250µAD = 250µA = 250µA \<br>wN<br>XA<br>1.6<br>SN<br>ONS<br>1.3 \<br>\<br>1-50<br>-50 -25 0 25 50 75 100 125 150 175<br>T , JUNCTION TEMPERATURE (JJ °C)C)<br>Figure 7 Gate Threshold Variation vs. Junction Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
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2.5 30<br>28<br>Ne 26 ee es || ee<br>~~ ee | |<br>2.2 QA 24 ee es ||<br>KO )A(T 22 es<br>ID = 1mAD = 1mA = 1mA N 20 ee eee ||| eee<br>1.9 SAANAN ER 18 ee|| ee<br>R<br>ID = 250µAD = 250µA = 250µA \ U 16 ee ||<br>C<br>wN E 14 Sf<br>1.6 XA CR 12 ee T = 175°CA<br>SN U |i<br>OS, S 108 T = 150°CA T = 85°CA<br>ONS I SH<br>1.3 \ 6 T = 125°CA Ie T = 25°CA<br>\ 4 o/h<br>2 T = -55°CA<br>1-50 -25 0 25 50 75 100 125 150 175 0 0 eB 0.3 0.6 TS 0.9 1.2 1.5<br>T , JUNCTION TEMPERATURE (JJ °C)C) V , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 7 Gate Threshold Variation vs. Junction Temperature Figure 8 Diode Forward Voltage vs. Current<br>1000<br>10000<br>T = 175°CA f=1MHz<br>)An(T 1000 f+ ot T = 150°CA Fs Ciss a<br>N a i ee \ NE | | ee<br>E<br>R<br>RU a T = 125°CA NER<br>C 100<br>E<br>G 100<br>AK T = 85°CA<br>AE 10 Seeeee) eee = Coss ==<br>L<br>N SSSESS =<br>IA<br>RD T = 25°CA<br>, SSD 1 Seeese= Ss] [Sees] = Pape RE Crss ESE<br>I<br>=== 10 PUL EEL EEL<br>0.1 i<br>0 5 10 15 20 25 30 35 40 45 50 55 60<br>0 5 10 15 20 25 30 35 40 45 50 55 60<br>V , DRAIN-SOURCE VOLTAGE (V)DS VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Drain-Source Leakage Current vs. Voltage Figure 10 Typical Junction Capacitance<br>10 100<br>RDS(on)<br>Limited<br>8 fd ge NN<br>)A 10 NT Nt<br>(T<br>N<br>6 VDS = 44V, ID = 5.2A ER DC<br>R<br>U 1 P = 10sW<br>C<br>N P = 1sW<br>4 IA<br>R P = 100msW<br>D<br>,I D 0.1 t y P = 10msW NIN NST<br>2 T = 150°CJ(max) P = 1msW<br>T = 25°CV = 10V AGS P = 100µsW<br>Single Pulse Atty<br>DUT on 1 * MRP Board<br>0 0.01 E LULU ELTA<br>0.1 1 10 100<br>0 2 4 6 8 10<br>V , DRAIN-SOURCE VOLTAGE (V)DS<br>Qg (nC) Figure 12 SOA, Safe Operation Area<br>Figure 11 Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, DRAIN LEAKAGE CURRENT (nA) , JUNCTION CAPACITANCE (pF) CJ<br>IDSS<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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1<br>D = 0.9<br>D = 0.7<br>Spe eee cLSeed<br>D = 0.5<br>CT TT = ae<br>D = 0.3 SSS OE<br>PTT TUTTE TIE ETT A TTT TTT<br>0.1<br>D = 0.1<br>Fe ||ar<br>Peete eet ro<br>er A)<br>D = 0.05<br>FERRE<br>OE a EE A |<br>LETT Ee TIE ETILETTE<br>PE D = 0.02 |LILI LIETLL<br>0.01 D = 0.01<br>TATE<br>D = 0.005<br>FH TE RRΘJAθJA((tt)) = r = r(t()* Rt) * RΘJA θJA Cl<br>a RRΘJA θJA = 105°C/W= 105 [o] C/W CT<br>D = Single Pulse Duty Cycle, D = t1/t2 Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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**DMNH6042SPDQ** —
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **PowerDI5060-8 (Type C)**
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PowerDI5060-8 (Type C)<br>Dim Min Max Typ<br>A 0.90 1.10 1.00<br>A1 0 0.05 0.02<br>=<br>D b 0.33 0.51 0.41<br>D1 b1 0.300 0.366 0.333<br>===<br>0 ( 4x) b2 0.20 0.35 0.25<br>c 0.23 0.33 0.277<br>mal x c D 5.15 BSC<br>E1 E A1 D1 4.85 4.95 4.90<br>y Seating Plane D2 1.40 1.60 1.50<br>p o e a :<br>D3 — — 3.98<br>1 E 6.15 BSC<br>f~ | Ø1.000 Depth 0.07±0.030 eS 0 1( 4x) E1 5.75 5.85 5.80<br>E2 3.56 3.76 3.66<br>b1( 8x) DETAIL A<br>e/2 e 1.27BSC<br>b( 8x)<br>m 1 o b2( 2x) k1 k 0.56 — — — 1.27 -<br>D3 ae<br>L k L 0.51 0.71 0.61<br>k1 A<br>La 0.51 0.71 0.61<br>Fa L4 .<br>E2 D2 D2 M ae DETAIL A aaae L1 0.05 0.20 0.175<br>L4 — — 0.125<br>A LF M 3.50 3.71 3.605<br>===<br>La | L1 : x — — 1.400<br>y — — 1.900<br>θ 10° 12° 11°<br>θ1 6° 8° 7°<br>aan<br>— All Dimensions in mm<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>PowerDI5060-8 (Type C)<br>X4<br>8<br>Value<br>Dimensions<br>(in mm)<br>C 1.270<br>Y1 G 0.660<br>X3 X2 G1 0.820<br>Y2 X 0.610<br>X1 3.910<br>Y3<br>G1 X2 1.650<br>X3 1.650<br>X1 X4 4.420<br>Y 1.270<br>Y1 1.020<br>Y( 4x)<br>Y2 3.810<br>o [ar] 5T = Y3 6.610<br>1<br>G<br>X og. C<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout yout out**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated
**www.diodes.com**
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DMNH6042SPDQ Document number: DS37388 Rev. 6 - 2
November 2018 © Diodes Incorporated
Updated at June 9, 2026
About Novapart
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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