DMNH6021SPDQ-13

**DMNH6021SPDQ** [7 

## **60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**V(BR)DSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>60V<br>25mΩ@VGS= 10V<br>32A<br>40mΩ@VGS= 4.5V<br>25A|||
|**V(BR)DSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|60V|25mΩ@VGS= 10V|32A|
||40mΩ@VGS= 4.5V|25A|



## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On-State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

   - Case: PowerDI[®] 5060-8 (Type C) 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections Indicator: See diagram 

- Backlighting 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe.  Matte Tin Annealed over Copper Leadframe.  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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 Power Management Functions   Terminals: Finish  Matte Tin Annealed over Copper Leadframe.  Matte Tin Annealed over Copper Leadframe.  Matte Tin Annealed over Copper Leadframe.<br> DC-DC Converters  Solderable per MIL-STD-202, Method 208<br> Weight: 0.097 grams (Approximate)<br>;<br>~ S1 1 D1 D1 D2<br>ian |I<br>G1 D1<br>S2 1 I D2 G1 G2<br>> IrLI D2<br>G2<br>Pin1  S1 S2<br>Pin Out<br>Top View  Bottom View  Equivalent Circuit<br>Top View<br>Ordering Information (Note 5)<br>Part Number Case Packaging<br>DMNH6021SPDQ-13 PowerDI5060-8 (Type C) 2,500/Tape & Reel<br>**----- End of picture text -----**<br>


- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

31 = Manufacturer’s Marking H6021SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 - 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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**DMNH6021SPDQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= 10V|TA= +25°C<br>TA= +70°C|ID|8.2<br>6.5|A|
|Continuous Drain Current (Note 8) VGS= 10V|TC= +25°C<br>TC= +100°C|ID|32<br>22|A|
|Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)||IDM|80|A|
|Maximum Continuous Body Diode Forward Current (Note 8)||IS|32|A|
|Avalanche Current, L = 0.1mH (Note 9)||IAS|35|A|
|Avalanche Energy, L = 0.1mH (Note 9)||EAS|64|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 6)||PD|1.5|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|99|°C/W|
||t<10s||53||
|Total Power Dissipation (Note 7)||PD|2.8|W|
|Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RθJA|54|°C/W|
||t<10s||27||
|Thermal Resistance, Junction to Case (Note 8)||RθJC|2.2|°C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~|**Min**<br>~~es~~|**Typ **<br>~~es~~|**Max**<br>~~es~~|**Unit**<br>~~es~~|**Test Condition**<br>~~es~~|
|**OFF CHARACTERISTICS**(Note 10)<br>~~es~~|||||||
|Drain-Source Breakdown Voltage<br>~~es~~|BVDSS<br>~~es~~|60<br>~~es~~|—<br>~~es~~|—<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250μA<br>~~es~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|VDS= 60V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 10)<br>~~es~~<br>~~i~~|||||||
|Gate Threshold Voltage<br>~~es~~<br>~~i~~|VGS(TH)<br>~~es~~|1<br>~~es~~|—<br>~~es~~|3<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250μA<br>~~es~~|
|Static Drain-Source On-Resistance<br>~~i~~<br>~~———————~~|RDS(ON)<br>~~———————~~|—<br>~~———————~~|15<br>~~———————~~|25<br>~~———————~~|mΩ<br>~~———————~~|VGS= 10V, ID= 15A<br>~~———————~~|
|||—<br>~~———————~~|21<br>~~———————~~|40<br>~~———————~~||VGS= 4.5V, ID= 12A<br>~~———————~~|
|Diode Forward Voltage<br>~~i~~<br>~~rt~~|VSD<br>~~rt~~|—<br>~~rt~~|0.75<br>~~rt~~|1.2<br>~~rt~~|V<br>~~rt~~|VGS= 0V, IS= 2.6A<br>~~rt~~|
|**DYNAMIC CHARACTERISTICS**(Note 11)<br>~~rt~~|||||||
|Input Capacitance|CISS|—|1,143|—|pF|VDS= 25V, VGS= 0V,<br>f = 1MHz|
|Output Capacitance|COSS|—|168|—|pF||
|Reverse Transfer Capacitance|CRSS|—|69|—|pF||
|Gate Resistance<br>~~Co~~|RG|—|2.1<br>~~I~~|—|Ω|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge(VGS= 10V)<br>~~DG~~<br>~~Co~~|QG<br>~~DG~~|—<br>~~DG~~|20.1<br>~~DG~~<br>~~I~~|—<br>~~DG~~|nC<br>~~DG~~|VDS= 30V, ID= 20A,<br>~~ee~~|
|Total Gate Charge(VGS= 6V)<br>~~Co~~|QG|—|12<br>~~I~~|—|nC||
|Gate-Source Charge<br>~~Co~~|QGS|—|4.3<br>~~I~~|—|nC||
|Gate-Drain Charge<br>~~————~~|QGD|—|5.5|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On Delay Time<br>~~————~~|tD(ON)|—|4.4|—<br>~~ee~~|ns<br>~~ee~~|VDD= 30V, VGS= 10V,<br>RG= 4.7Ω, ID= 20A<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR|—|6.0|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~————~~|tD(OFF)|—<br>~~ee~~|14.2<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tF|—<br>~~ee~~|5.4<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Body Diode Reverse Recovery Time<br>~~————~~<br>~~————~~|tRR<br>~~————~~|—<br>~~————~~<br>~~ee~~|21.2<br>~~————~~<br>~~ee~~|—<br>~~ee~~<br>~~————~~<br>~~ee~~|ns<br>~~ee~~<br>~~————~~<br>~~ee~~|IF=20A, di/dt=100A/μs<br>~~ee~~<br>~~————~~|
|Body Diode Reverse Recovery Charge<br>~~————~~|QRR<br>~~————~~|—<br>~~————~~<br>~~ee~~|15.2<br>~~————~~<br>~~ee~~|—<br>~~————~~<br>~~ee~~|nC<br>~~————~~<br>~~ee~~||



- Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 

8. Thermal resistance from junction to soldering point (on the exposed drain pad). 

9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C 

10. Short duration pulse test used to minimize self-heating effect. 

11. Guaranteed by design. Not subject to product testing. 

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30 30<br>VGS = 10V VDS = 5.0V<br>25 AR VGS  = 8V 25<br>VGS  = 4.5V<br>VGS  = 4V<br>20 20<br>7 VGS = 3.5V ee<br>TA  = 175°C<br>15 15<br>ff ——_ if TA = 150°C<br>10 10 TA = 125°C T A  = 85°C<br>|Aaa | TA = 25°C |<br>VGS = 3.0V<br>5 5 TA = -55°C<br>[pf<br>0 TOO 0 —D<br>0 0.5 1 1.5 2 2.5 3 1.5 2 2.5 3 3.5 4<br>VDS , DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>30 40<br>35<br>25<br>30<br>20 SO EREEDEG VGS = 4.5V 25 AIEEEety ID = 12A yy<br>BERDEEP roe<br>20<br>15<br>so 15 AEE<br>VGS = 10V<br>10<br>SEE 10 SSE<br>5 EEE) 5 Gece<br>5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 18 20<br>I D, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>40 2.4<br>VGS = 10V<br>2.2<br>35 CoO COO<br>VGS = 10V<br>30 T A  = 175°C 2 ID = 12A<br>ee TA  = 150°C 1.8 Corer<br>25 T A  = 125°C<br>ee 1.6 ae V GS  = 4.5V<br>20 T A  = 85°C 1.4 ID = 5A<br>meet TT eo<br>15 Tere TA  = 25°C ret | | 1.2 PPA<br>10 eee 1 CCEA<br>TA = -55°C<br>0.8<br>5<br>Seeeeeeee= Ce<br>0.6<br>0<br>0 COT 5 10 15 20 25 30 35 40 45 50 0.4 ae<br>Figure 5 Typical On-Resistance vs. I D, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 125 150C) 175<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>D<br> I<br>, DRAIN CURRENT (A)<br> I<br>D<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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4035 FP] tT ey ty to 2.42.2 NER<br>VGS  = 10V<br>30 I D  = 12A 2<br>25 Ae 1.8 SNE ID = 1mA<br>20 P| | ff ae VGS = 4.5V 1.6 --RRSS ID = 250µA EE<br>ID = 12A<br>15 Hea | 1.4 Ho SS |<br>aE AP 2 Co PN<br>10 1.2<br>Ther | tt oN<br>5 —T 1 | | LL 1 tt LELLINS<br>0 PLE ELLE LL 0.8 EEL EELLLIN<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>50 10000<br>f=1MHz<br>43 ee || SS<br>36 C iss<br>1000<br>29<br>TA  = 175°C<br>22 TA = 150°C T A  = 25°C C oss<br>TA = 125°C TA = -55°C 100<br>15 C rss<br>Mt "| =e ee<br>TA  = 85°C<br>8 MEE ===========—<br>1 WT) 10 FCELELELELLL<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 45 50 55 60<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 100<br>R DS(on)<br>Limited<br>8 PW = 10µs<br>WA/ LtSHENAE DC NN PW = 1µs NY<br>10 PW = 100ms<br>6 VDS = 30V<br>ID = 20A PW = 10ms<br>P W  = 1ms<br>4<br>1<br>T  = 175°C<br>J(m ax)<br>2 ATT TTTTY | T C  = 25°C SN<br>VGS  = 10V<br>Single Pulse<br>DUT on Infinite Heatsink<br>0 ALL Ty yy yyy 0. 1 | eaTo Cen<br>0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>D<br>I<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMNH6021SPDQ** [ 

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'nm CORPORATE hg<br>**----- End of picture text -----**<br>


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1<br>Saer D D = 0.7= 0.9 Paneraem tase<br>D = 0.5 a a ee<br>erPEAet<br>CE D = 0.3 pees”; CAMEL MEMANI(I(MEIMAIOlIGERMAIOII<br>0.1<br>SERTA D = 0.1 era LIMaTINIE ETNetLLIN<br>po D = 0.05 a ttt<br>Ke Ee<br>0.01 poZAJ D  D = 0.02  | = 0.01  Or AN LTE ETE ETPT<br>Scene wenoee<br>ee ee ee ec oo cee<br>TI D = 0.005 CT<br>L_4 RJC(t) = r(t)  *  RJC<br>D = Sin “EHH gle Pulse HT<br>R JC  = 2.2°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMNH6021SPDQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5060-8 (Type C)** 

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D PowerDI5060-8 (Type C)<br>. D1 SSS Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>0 (4x) A1  0  0.05  0.02<br>b  0.33 0.51  0.41<br>x c b1  0.300 0.366 0.333<br>E1 E A1 b2  0.20 0.35 0.25<br>y Seating Plane c  0.23 0.33 0.277<br>e D  5.15 BSC<br>heh S555 D1  4.85  4.95  4.90<br>1<br>D2  1.40  1.60  1.50<br>Ø1.000 Depth 0.07±0.030 0 1(4x)<br>Tee NS —- D3   + –  –  3.98<br>E  6.15 BSC<br>b1(8x) DETAIL A E1  5.75  5.85  5.80<br>e/2<br>b(8x) E2  3.56  3.76  3.66<br>oes 1 ———— e  1.27BSC<br>D3 b2(2x) k  –  –  1.27<br>L k k1  0.56  –  –<br>ery k1 A ——— L  0.51  0.71  0.61<br>E2 D2 L4 La  0.51  0.71  0.61<br>D2 M DETAIL A L1  0.05  0.20  0.175<br>L4  –  –  0.125<br>meee | ———<br>M  3.50  3.71  3.605<br>La Se L1 = x  –  –  1.400<br>y –  –  1.900<br>= θ  10°  12°  11°<br>ee θ1  6°  ee 8°  ee 7°  ee<br>[| [ss—Ci‘sCsisz] All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (Type C)** 

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X4<br>8<br>Y1<br>X3 X2<br>Y2<br>Y3<br>G1<br>LILI, X1<br>Y(4x)<br>1<br>G<br>og X C i<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  3.910<br>X2  1.650<br>X3  1.650<br>X4  4.420<br>==—— Y  1.270<br>Y1  1.020<br>Y2  3.810<br>Y3 6.610<br>_<br>**----- End of picture text -----**<br>


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DMNH6021SPDQ Document number: DS38111 Rev. 2 - 2 

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**DMNH6021SPDQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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DMNH6021SPDQ Document number: DS38111 Rev. 2 - 2 

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