DMN65D8LDWQ-7

**DMN65D8LDWQ** 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**V(BR)DSS**|**RDS(ON)**|**Package**|**ID **<br>**TA = +25°C**|
|60V|8Ω@VGS= 5V|SOT363|170mA|
||6Ω@VGS= 10V||200mA|



## **Features** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Small Surface Mount Package 

- ESD Protected Gate, 1KV (HBM) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability**  **PPAP Capable (Note 4)** 

## **Mechanical Data** 

- DC-DC Converters 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. 

- Case: SOT363 

- Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Solderable per MIL-STD-202, Method 208 **e3** 

- Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). 

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 Terminal Connections: See Diagram<br> Weight: 0.006 grams (Approximate)<br>SOT363<br>D22 G11 S11<br>ESD PROTECTED TO 1kV<br>S22 G22 D11<br>2 @ is<br>Top View<br>**----- End of picture text -----**<br>


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D22 G11 S11<br>S22 G22 D11<br>is<br>Top View<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN65D8LDWQ-7|SOT363|3,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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SOT363<br>MM1= Product Type Marking Code<br>MM1  YM YM = Date Code Marking<br>Y = Year (ex: A = 2013)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2007 2008 2009 2010  2011  2012  2013  2014  2015  2016  2017  2018<br>Code U  V  W  X  Y  Z  A  B  C  D  E  F<br>a<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 7  ee 8 9 ee O N  D<br>DMN65D8LDWQ 1 of 6  February 2015<br>Document number: DS37778 Rev. 1 - 2 www.diodes.com   © Diodes Incorporated<br>MM1  YM<br>**----- End of picture text -----**<br>


**DMN65D8LDWQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6)<br>VGS=10V|=10V<br>Steady<br>State|TA= +25°C<br>TA= +70°C|ID|180<br>140|mA|
|Continuous Drain Current (Note 6)<br>VGS= 5V|5V<br>Steady<br>State|TA= +25°C<br>TA= +70°C|ID|150<br>120|mA|
|Continuous Drain Current (Note 7)          VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|200<br>160|mA|
|Continuous Drain Current (Note 7)          VGS= 5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|170<br>140|mA|
|Pulsed Drain Current (10µspulse, dutycycle = 1%)|||IDM|800|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 6)|PD|300|mW|
|Thermal Resistance, Junction to Ambient (Note 6)|RθJA|435|°C/W|
|Total Power Dissipation (Note 7)|PD|400|mW|
|Thermal Resistance, Junction to Ambient (Note 7)|RθJA|330|°C/W|
|Thermal Resistance, Junction to Case (Note 7)|RθJC|139|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current                     TJ= +25°C<br>TJ= +125°C(Note 8)<br>~~eee~~|IDSS<br>~~eee~~|<br>~~eee~~|<br>~~eee~~<br>~~OG~~|1.0<br>5.0<br>~~eee~~<br>~~OG~~|µA<br>~~eee~~<br>~~OG (~~|VDS= 60V, VGS= 0V<br>~~eee~~<br>~~(~~|
|Gate-BodyLeakage<br>~~PD~~|IGSS<br>~~PD~~|<br>~~PD~~|<br>~~PD~~<br>~~OG~~|±5.0<br>~~PD~~<br>~~OG~~|µA<br>~~PD~~<br>~~OG (~~|VGS= ±20V, VDS= 0V<br>~~PD~~<br>~~(~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~PD~~<br>~~OG (~~|||||||
|Gate Threshold Voltage<br>~~GO~~|VGS(th)<br>~~O~~|1.0<br>~~O~~|<br>~~O~~|2.0<br>~~(OO~~|V<br>~~(OO~~|VDS= VGS, ID= 250µA<br>~~(OO~~|
|Static Drain-Source On-Resistance<br>~~GO~~<br>~~po~~|RDS (ON)<br>~~O~~<br>~~po~~|<br>~~O~~<br>~~po~~|<br>~~O~~<br>~~po~~|8<br>~~(OO~~<br>~~po~~|Ω<br>~~(OO~~<br>~~po~~|VGS= 5.0V, ID= 0.115A<br>~~(OO~~<br>~~po~~|
|||<br>~~po~~|<br>~~po~~|6<br>~~po~~|Ω<br>~~po~~|VGS= 10.0V, ID= 0.115A<br>~~po~~|
|Forward Transconductance<br>~~po~~<br>~~a~~|gFS<br>~~po~~<br>~~I~~|80<br>~~po~~<br>~~(GOR~~|<br>~~po~~<br>~~(GOR~~|<br>~~po~~<br>~~(GOR~~|mS<br>~~po~~<br>~~S(O~~|VDS= 10V, ID= 0.115A<br>~~po~~<br>~~S(O~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~I~~|—<br>~~(GOR~~|0.8<br>~~(GOR~~|1.2<br>~~(GOR~~|V<br>~~S(O~~|VGS= 0V,IS= 115mA<br>~~S(O~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~a~~<br>~~I~~<br>~~(GOR S(O~~<br>~~a~~|||||||
|Input Capacitance<br>~~aee~~|Ciss<br>~~ee~~|<br>~~ee~~|22.0<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= 25V, VGS= 0V, f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~aee~~|Coss<br>~~ee~~|<br>~~ee~~|3.2<br>~~ee~~|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|2.0<br>~~ee~~|<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~——————~~|RG<br>~~ee~~|<br>~~ee~~|79.9<br>~~ee~~|<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge  VGS= 10V<br>~~ee~~<br>~~——————~~|Qg<br>~~ee~~||0.87|<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VGS= 10V, VDS= 30V,<br>ID= 150mA<br>~~ee~~<br>~~ee~~|
|Total Gate Charge VGS= 4.5V<br>~~ee~~<br>~~——————~~|Qg<br>~~ee~~||0.43|<br>~~e~~|||
|Gate-Source Charge<br>~~——————~~|Qgs||0.11|<br>~~e~~|||
|Gate-Drain Charge<br>~~——————~~<br>~~a—————~~|Qgd||0.11|<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~——————~~<br>~~a—————~~|tD(on)||3.3|<br>~~e~~<br>~~ee~~|nS<br>~~e~~<br>~~ee~~|VDD= 30V, ID= 0.115A, VGEN= 10V,<br>RGEN= 25Ω<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~a—————~~|tr||3.2|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—————~~|tD(off)||12.0|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—————~~|tf||6.3|<br>~~ee~~|||



Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout 

- 8 .Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to production testing. 

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**DMN65D8LDWQ** 

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0.6 1<br>V DS = 5.0V<br>0.5<br>0.4<br>0.3 0.1<br>T A  = 150°C<br>T A  = 125°C<br>0.2<br>T A  = 85°C<br>0.1 TA = 25°C<br>TA = -55°C<br>0 / ACG 0.01 ieee<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE<br>Fig.1 Typical Output Characteristic Fig.2  Typical Transfer Characteristics<br>5.0 2.4<br>4.5 P| | | | ft | 2.2 P| | | | | ft |<br>4.0 2.0 V GS   10= V<br>ID = 115mA<br>3.5 ee 1.8 ee,<br>3.0 1.6<br>VGS= 5V<br>2.5 ee 1.4 SCE V GS = 5V<br>ID = 115mA<br>2.0 V GS = 10V 1.2<br>1.5 a—T [| | | 1.0 SEERA| |PET><br>1.0 0.8<br>0.5 SS 0.6 Tf<br>0 es 0.4 TELESCE<br>0 0.1 0.2 0.3 0.4 0.5 0.6 50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT TJ, JUNCTION TEMPERATURE (C)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>5 2.0<br>1.8<br>4 TL EELELL. 1.6 SEE<br>1.4 ID = 1mA<br>A<br>3 IDVGS= 115mA= 5V 1.2 I D = 250µA<br>RRERRDZZ 1.0 SS<br>2 Py feZAaa V GS   10= V 0.8 FtP| || | | [| ft—™~|]<br>ID = 115mA<br>0.6<br>1 cer t y] =  GEEEEEEE 0.4<br>0.2<br>0 PCCP) 0 FeEERE| ft | | fe<br>- 50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 Gate Threshold Variation vs. Ambient Temperature<br>, DRAIN CURRENT (A)<br>D<br> I<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>, DRAIN CURRENT (A)<br>D<br> I<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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DMN65D8LDWQ Document number: DS37778 Rev. 1 - 2 

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© Diodes Incorporated 

**DMN65D8LDWQ** 

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1,000<br>ASS<br>100<br>jj T | A = 150°C = 150°C°CC<br>TA = 125°CA = 125°C = 125°C<br>10<br>T A  = -55°C T A  = 25°C TAA = 85°C 85°C°CC<br>a<br>1<br>PT LEELLELL LEELLELL<br>0 10 20 30 40 50<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Fig. 8 Typical Drain-Source Leakage Current vs. Voltage<br>DSS<br>, DRAIN LEAKAGE CURRENT (nA)<br>I<br>**----- End of picture text -----**<br>


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1 1,000<br>es 4 A) Ay A)A<br>Tf ASS<br>0.1 100<br>af ff jj T | A = 150°C = 150°C°CC<br>TA = 150°C<br>TA = 125°C TA = 85°C TA = 125°CA = 125°C = 125°C<br>0.01 TA = 25°C 10<br>TA = -55°C T A  = -55°C T A  = 25°C TAA = 85°C 85°C°CC<br>ee 2 ee ee) ee ee a<br>0.001 | TET 1 PT LEELLELL LEELLELL<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Fig. 7 Diode Forward Voltage vs. Current<br>50<br>45 f = 1MHz<br>40 eerd<br>a<br>35<br>30<br>A<br>25 Ne C iss<br>rtf,<br>20<br>15 a<br>10<br>a<br>Coss<br>5<br>0 ————a Crss<br>0 5 10 15 20 25<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Junction Capacitance<br>1<br>D = 0.7<br>Inna D = 0.5<br>D = 0.3<br>Sy ese CM Ce<br>0.1 PTT TT CT AST I D = 0.9 TTTce TTTee TTT TTT<br>D = 0.1<br>ee er CUFFa}<br>bP D = 0.05 oeAC<br>D = 0.02<br>eR A<br>0.01<br>D = 0.01 RJA(t) = r(t) * RJA<br>Ret RJA = 318C/W ct<br>bert D = 0.005 Duty Cycle, D = t1/t2 Hitt<br>er TIL TTI TTE<br>D = Single Pulse<br>0.001 Frcs 2 COI FEIN FCO EVIE CIE ETE TTT<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 10 Transient Thermal Resistance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>DSS<br>, DRAIN LEAKAGE CURRENT (nA)<br>I<br>, SOURCE CURRENT (V)<br>IS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMN65D8LDWQ Document number: DS37778 Rev. 1 - 2 

February 2015 © Diodes Incorporated 

**www.diodes.com** 

**DMN65D8LDWQ** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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|||||||||
|---|---|---|---|---|---|---|---|
|A|
|SOT363|
|Dim|Min|Max|Typ|
|B|C|A|0.10|0.30|0.25|
|B|1.15|1.35|1.30|
|C|2.00|2.20|2.10|
|mai|———|D|0.65 Typ|
|F|0.40|0.45|0.425|
|H|
|H|1.80|2.20|2.15|
|K|yy|M|S555|J|0|0.10|0.05|
|K|0.90|1.00|1.00|
|L|0.25|0.40|0.30|
|J|D|F|L|M|0.10|0.22|0.11|
|ee||0°|8°|-|
|All Dimensions in mm|

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## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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C2 C2<br>k K ae<br>e G ee C1<br>Z<br>Y<br>tooo<br>Ik X ><br>**----- End of picture text -----**<br>


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|||
|---|---|
|Dimensions Value (in mm)|
|Z|2.5|
|G|1.3|
|X|0.42|
|Y|0.6|
|C1|1.9|
|C2|0.65|

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DMN65D8LDWQ Document number: DS37778 Rev. 1 - 2 

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**DMN65D8LDWQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** 

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- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

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Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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DMN65D8LDWQ Document number: DS37778 Rev. 1 - 2 

February 2015 © Diodes Incorporated