DMN65D8LDW-7

**DMN65D8LDW** 

## **DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|~~—~~|~~—~~|~~—~~|
|---|---|---|
|**V(BR)DSS**|**RDS(on) Max**|**ID Max**<br>**TA = +25°C**|
|60V|8Ω@VGS= 5V|170mA|
||6Ω@VGS= 10V|200mA|



## **Features and Benefits** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Small Surface Mount Package 

- ESD Protected Gate, 1KV (HBM) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Qsuffix) part. A listing can be found at -** 

- **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

   - **https://www.diodes.com/quality/product-definitions/** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMN65D8LDWQ)** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT363 (Standard) 

   - Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Solderable per MIL-STD-202, Method 208 **e3** 

- DC-DC Converters 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. 

- Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Lead-Frame). 

- Terminal Connections: See Diagram 

- Weight: 0.006 grams (Approximate) 

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ESD PROTECTED TO 1kV<br>**----- End of picture text -----**<br>


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SOT363 (Standard)<br>Top View<br>**----- End of picture text -----**<br>


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D2 G1 S1<br>S2 G2 D1<br>Top View<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN65D8LDW-7|SOT363 (Standard)|3,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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## **Marking Information** 

MM1= Product Type Marking Code **MM1  YM** YM = Date Code Marking Y or Y = Year (ex: I = 2021) M or M= Month (ex: 9 = September) 

Date Code Key **Year 2007 …… 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030** ~~ee~~ **Code** U …… I J K L M N O P R S **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~e~~ **Code** 1 2 3 4 5 6 7 8 9 O N D ~~—— ee ee~~ ~~**e** e ee ee ee~~ ~~**e** e~~ ~~**e** e~~ 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 5)<br>VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|180<br>140|mA|
|Continuous Drain Current (Note 5)<br>VGS= 5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|150<br>120|mA|
|Continuous Drain Current (Note 6)          VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|200<br>160|mA|
|Continuous Drain Current (Note 6)          VGS= 5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|170<br>140|mA|
|Pulsed Drain Current (10µspulse, dutycycle = 1%)|||IDM|800|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 5)|PD|300|mW|
|Thermal Resistance, Junction to Ambient(Note 5)|RθJA|435|°C/W|
|Total Power Dissipation(Note 6)|PD|400|mW|
|Thermal Resistance, Junction to Ambient(Note 6)|RθJA|330|°C/W|
|Thermal Resistance, Junction to Case(Note 6)|RθJC|139|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



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## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~<br>~~es~~|60<br>~~ee~~<br>~~es~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~es~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current                   TJ= +25°C<br>TJ= +125°C(Note 8)<br>~~ee~~|IDSS<br>~~ee~~<br>~~es~~<br>~~I~~|<br>~~ee~~<br>~~es~~<br>~~(DD~~|<br>~~ee~~<br>~~ee~~<br>~~(DD~~|1.0<br>5.0<br>~~ee~~<br>~~ee~~<br>~~(DD~~|µA<br>~~ee~~<br>~~es~~<br>~~I~~|VDS= 60V, VGS= 0V<br>~~ee~~|
|Gate-BodyLeakage<br>~~I~~|IGSS<br>~~es ~~<br>~~I~~<br>~~I~~|<br> ~~es ~~<br>~~I~~<br>~~(DD~~|<br> ~~ee ~~<br>~~I~~<br>~~(DD~~|±5.0<br> ~~ee ~~<br>~~I~~<br>~~(DD~~|µA<br> ~~es~~<br>~~I~~<br>~~I~~|VGS= ±20V, VDS= 0V<br>~~I~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~I~~<br>~~(DD I~~<br>~~a~~<br>~~St~~<br>~~(RsI~~|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(th)<br>~~St~~|1.0<br>~~(Rs~~|<br>~~(Rs~~|2.0<br>~~I~~|V|VDS= VGS, ID= 250µA|
|Static Drain-Source On-Resistance<br>~~a~~<br>~~a~~|RDS (ON)<br>~~St~~|<br>~~(Rs~~|2.2<br>~~(Rs ~~|8<br> ~~I~~|Ω|VGS= 5V, ID= 0.115A|
||||2.0|6|Ω|VGS= 10V, ID= 0.115A|
|Forward Transconductance<br>~~ee~~|gFS<br>~~ee~~|80<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|mS<br>~~ee~~|VDS= 10V, ID= 0.115A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.8<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V, IS= 115mA<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Input Capacitance<br>~~ns~~<br>~~———~~|Ciss<br>~~ns~~<br>~~———~~<br>~~ee~~|<br>~~ns~~<br>~~———~~<br>~~ee~~|22.0<br>~~ns~~<br>~~———~~|<br>~~ns~~<br>~~———~~|pF<br>~~———~~|VDS= 25V, VGS= 0V, f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~ns~~<br>~~———~~|Coss<br>~~ns~~<br>~~———~~<br>~~ee~~|<br>~~ns~~<br>~~———~~<br>~~ee~~|3.2<br>~~ns~~<br>~~———~~|<br>~~ns~~<br>~~———~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~ee~~|2.0<br>~~———~~|<br>~~———~~|||
|Gate Resistance<br>~~———~~<br>~~—————~~|RG<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~ee~~|79.9<br>~~———~~|<br>~~———~~<br>~~e~~|Ω<br>~~———~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge  VGS= 10V<br>~~es~~<br>~~—————~~|Qg<br>~~ee~~<br>~~es~~|<br>~~ee~~<br>~~es~~|0.87<br>~~es~~|<br>~~es~~<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VGS= 10V, VDS= 30V,<br>ID= 150mA<br>~~ee~~<br>~~ee~~|
|Total Gate Charge VGS= 4.5V<br>~~es~~<br>~~—————~~|Qg<br>~~es~~|<br>~~es~~|0.43<br>~~es~~|<br>~~es~~<br>~~e~~|||
|Gate-Source Charge<br>~~—————~~|Qgs||0.11|<br>~~e~~|||
|Gate-Drain Charge<br>~~—————~~<br>~~————~~|Qgd||0.11|<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~—————~~<br>~~es~~<br>~~————~~|tD(on)<br>~~es~~|<br>~~es~~|3.3<br>~~es~~|<br>~~e~~<br>~~es~~<br>~~ee~~|nS<br>~~e~~<br>~~ee~~|VDD= 30V, ID= 0.115A, VGEN= 10V,<br>RGEN= 25Ω<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~es~~<br>~~PO~~<br>~~————~~|tr<br>~~es~~|<br>~~es~~|3.2<br>~~es~~|<br>~~es~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~PO~~<br>~~————~~|tD(off)||12.0|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tf||6.3|<br>~~ee~~|||



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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0.6 1<br>V DS = 5.0V<br>0.5 Ensen =———————<br>0.4<br>Yom Of<br>0.3 0.1<br>T A  = 150°C<br>T A  = 125°C<br>0.2<br>T A  = 85°C<br>0.1 poate oe TA = 25°C<br>TA = -55°C<br>0 KEELE EL 0.01 Ihe<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE<br>Fig.1 Typical Output Characteristic Fig.2  Typical Transfer Characteristics<br>5.04.5 a 2.42.2 ee<br>4.0 2.0 V GS   10= V<br>ID = 115mA<br>3.5 1.8<br>3.0 Soe 1.6 aS<br>VGS= 5V<br>2.5 1.4 V GS = 5V<br>a eee ID = 115mA 2<br>2.0 V GS = 10V - 1.2 Saen57ae<br>1.5 ce 1.0<br>1.0 0.8<br>0.5 eee 0.6 cee<br>0 0.4<br>IEE ET EEE<br>0 0.1 0.2 0.3 0.4 0.5 0.6 50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT TJ, JUNCTION TEMPERATURE (C)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>5 2.0<br>1.8<br>4 Tt 1.6 ==<br>1.4 ID = 1mA<br>C0<br>3 IDVGS= 115mA= 5V 1.2 I D = 250µA<br>BRRRRDZ SS<br>1.0<br>2 TTZ LTT V GS   10= V 0.8 aa~TEEEEEE~~<br>ID = 115mA<br>0.6<br>1 watt ||| 0.4 EEE<br>0.2<br>0 TTT TTT 0 [TEEFEE EEE<br>- 50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 Gate Threshold Variation vs. Ambient Temperature<br>, DRAIN CURRENT (A)<br> I<br>D<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>D<br> I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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1 1,000<br>| —. | —| Sh ff a sseG<br>es ee e/a es Ge Ge eG |<br>0.1 EL 100 ABE<br>TA = 150°C<br>TA = 150°C<br>——[| Hf[ffFffi fe || —————————Gs<br>TA = 125°C TA = 85°C TA = 125°C<br>0.01 aIfeoo |et TA = 25°C |.7 10 aeeeeQO ——<br>TA = -55°C T A  = -55°C T A  = 25°C TA = 85°C<br>—— Pp a<br>po | ee ee ee<br>ees ee ee |<br>0.001 | AGE EE 1 Pi | | Etete<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 7 Diode Forward Voltage vs. Current Fig. 8 Typical Drain-Source Leakage Current vs. Voltage<br>504540 |ffse| | f = 1MHz a 10 ESeeesesee aeeEEee<br>35<br>— ee ee ee. Se<br>30<br>25 _ C iss E O LURESSNINNST<br>20 =s fay;pot 1ftyTT ttyWw dT[7AT TNATSANGONINPRT TTTTTT<br>1510 WO oot Tyran) = 150°C bEeae odes ||PSNTT<br>—_] een NS et<br>Coss<br>5 eea a peSingle= PulseOR LKFSeinePy = 10ms eetFN roy<br>0 eee Crss eee o.oorl Suton coors T T TTTTTLLLws Ty<br>0 5 10 15 20 25 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V) Vos DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>, DRAIN LEAKAGE CURRENT (nA)<br>IDSS<br>, SOURCE CURRENT (V)<br>IS<br>**----- End of picture text -----**<br>


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1<br>SSS<br>D = 0.7<br>SE D = 0.5 SS ee<br>by y PICTeee ee eee e ee ata Teet ttt<br>D = 0.3 TN<br>SCT<br>PUTT TT<br>0.1 IIE EET NTI D = 0.9 ETTTIE TLE ELIE TUT<br>EO,SSS D = 0.1D = 0.05  EESeaee| | POT<br>SS i<br>A a 7, A<br>D = 0.02<br>ae AR<br>0.01 SEHIE D = 0.01 [eee] LU [es] >aA LMM LLLULE RJA(t) = r(t) * RJA  IlFEE<br>RJA = 318330°C/WC/W<br>D = 0.005 Duty Cycle, D = t1/t2<br>cemene CTT<br>a a CT<br>D = Single Pulse<br>0.001 Com LTULC<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 11 TFig. 10 T ransient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN65D8LDW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363 (Standard)<br>E Toy E1 SOT363 (Standard)<br>Dim  Min  Max  Typ<br>A1  0.00  0.10  0.05<br>A2  0.80 1.00 0.90<br>b  0.10 0.35 0.225<br>c  0.08 0.22  0.15<br>F<br>Cel b D  1.80 2.20 2.00<br>E  2.00 2.45 2.225<br>E1  1.15 1.35 1.25<br>D<br>e  --  --  0.65<br>F  0.25 0.45 0.35<br>L  0.25 0.46 0.355<br>A2 a 0° 8° --<br>All Dimensions in mm<br>c a<br>A1 e a, L<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT363 (Standard)** 

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C<br>Y1 G<br>ca<br>Y<br>mau X il 1<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G  1.300<br>X  0.420<br>Y  0.600<br>= Y1  2.500<br>—-—<br>**----- End of picture text -----**<br>


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**DMN65D8LDW** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

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