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DMN63D8LDWQ-7
Dual MOSFET, N Channel, 30 V, 30 V, 220 mA, 220 mA, 2.8 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 400mW
- Power Dissipation P Channel: 400mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 220mA
- Continuous Drain Current Id P Channel: 220mA
- Drain Source On State Resistance N Channel: 2.8ohm
- Drain Source On State Resistance P Channel: 2.8ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.067 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMN63D8LDWQ** @, Cd **DUAL N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
## **Features**
- Dual N-Channel MOSFET
|**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = 25°C**|
|---|---|---|
|30V|4.2Ω@VGS= 4.5V|200mA|
||2.8Ω@VGS= 10V|260mA|
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Small Surface Mount Package
- ESD Protected Gate
## **Description**
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Applications**
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems and Solid-State Relays
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Mechanical Data**
- Case: SOT363
- Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208
- • Terminal Connections: See Diagram
- Weight: 0.006 grams (approximate)
ESD PROTECTED
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SOT363<br>Top View<br>**----- End of picture text -----**<br>
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D2 G1 S1<br>S2 G2 D1<br>Top View<br>Internal Schematic<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 5)
|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN63D8LDWQ-7|SOT363|3000/Tape & Reel|
|DMN63D8LDWQ-13|SOT363|10000/Tape & Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
MM4 = Product Type Marking Code **MM4 YM** YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key **Year 2013 2014 2015 2016 2017 2018 2019** ~~ee~~ **Code** A B C D E F G **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~Se Oe OG~~ DMN63D8LDWQ 1 of 6 August 2014 Document number: DSxxxxx Rev. 1 - 2 **www.diodes.com** © Diodes Incorporated
**DMN63D8LDWQ**
**Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6)<br>VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|220<br>170|mA|
|Continuous Drain Current (Note 7) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|260<br>210|mA|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|800|mA|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation|(Note 5)|PD|300|mW|
||(Note 6)||400||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|435|°C/W|
||(Note 6)||330||
|Thermal Resistance,Junction to Case|(Note 6)|RθJC|139||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to 150|°C|
## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|||V|VGS= 0V, ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|||1.0|µA|VDS= 30V, VGS= 0V|
|Gate-BodyLeakage|IGSS|||±10.0|µA|VGS= ±20V, VDS= 0V|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage|VGS(th)|0.8||1.5|V|VDS= VGS, ID= 250µA|
|Static Drain-Source On-Resistance|RDS (ON)|||2.8|Ω|VGS= 10.0V, ID= 250mA|
|||||3.8||VGS= 5V, ID= 250mA|
|||||4.2||VGS= 4.5V, ID= 250mA|
|||||4.5||VGS= 4.0V, ID= 250mA|
|||||13||VGS= 2.5V, ID= 10mA|
|Forward Transconductance|gFS|80|||mS|VDS= 10V, ID= 0.115A|
|Diode Forward Voltage|VSD|-|0.8|1.2|V|VGS= 0V,IS= 115mA|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~oeee~~<br>~~—————~~|||||||
|Input Capacitance<br>~~——~~<br>~~—————~~|Ciss<br>~~——~~<br>~~oe~~|<br>~~——~~<br>|22.0<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|pF<br>~~——~~<br>~~ee~~|VDS= 25V, VGS= 0V, f = 1.0MHz<br>~~——~~<br>~~ee~~|
|Output Capacitance<br>~~——~~<br>~~—————~~|Coss<br>~~——~~<br>~~oe~~|<br>~~——~~<br>|3.2<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~——~~<br>~~—————~~|Crss<br>~~——~~<br>~~oe~~|<br>~~——~~<br>|2.0<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|||
|Gate Resistance<br>~~——~~<br>~~—————~~<br>~~——————~~|RG<br>~~——~~<br>~~oe~~|<br>~~——~~<br>|79.9<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|Ω<br>~~——~~<br>~~ee~~<br>~~**ee**~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~——~~<br>~~ee~~<br>~~**ee**~~|
|Total Gate Charge VGS= 10V<br>~~—————~~<br>~~——————~~|Qg<br>~~oe~~|<br>|0.87<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~<br>~~**ee**~~|VGS= 10V, VDS= 30V,<br>ID= 150mA<br>~~ee~~<br>~~**ee**~~|
|Total Gate Charge VGS= 4.5V<br>~~—————~~<br>~~——————~~|Qg<br>~~oe~~|<br>|0.43<br>~~ee~~|<br>~~ee~~|||
|Gate-Source Charge<br>~~—————~~<br>~~——————~~|Qgs<br>~~oe~~|<br>|0.11<br>~~ee~~|<br>~~ee~~|||
|Gate-Drain Charge<br>~~—————~~<br>~~——————~~|Qgd<br>~~oe~~|<br>|0.11<br>~~ee~~|<br>~~ee~~|||
|Turn-On DelayTime<br>~~—————~~<br>~~——————~~|tD(on)<br>~~oe~~|<br>|3.3<br>~~ee~~|<br>~~ee~~|nS<br>~~ee~~<br>~~**ee**~~|VDD= 30V, ID= 0.115A, VGEN= 10V,<br>RGEN= 25Ω<br>~~ee~~<br>~~**ee**~~|
|Turn-On Rise Time<br>~~—————~~<br>~~——————~~|tr<br>~~oe ~~|<br>|3.2<br> ~~ee~~|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~——————~~|tD(off)||12.0||||
|Turn-Off Fall Time<br>~~——————~~|tf||6.3||||
- Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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0.8 0.6<br>VGS = 10.0V<br>0.7 an 7<br>0.5 VDS = 5.0V<br>0.6 VGS = 4.5V<br>VGS = 4.0V 0.4<br>fo<br>0.5<br>Ane<br>VGS = 3.0V<br>0.4 0.3<br>0.3 fo TA = 150°C<br>0.2<br>0.2 TA = 125°C<br>Poo VGS = 2.5V Ea TA = 85°C<br>0.1<br>0.1 TA = 25°C<br>VGS = 2.0V<br>TA = -55°C<br>0 AZ 0 a Ae<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>5 5.0<br>4.5<br>4<br>A 4.0 a<br>VGS = 2.5V<br>3.5<br>3<br>Pou VGS = 4.5V =A<br>3.0<br>2 Sn8>>2 ID = 250mA<br>VGS = 10V 4 0 2.5 ee ID = 100mA<br>2.0<br>1<br>TTL 1.5 — I D = 10mA<br>0 LE EELEL 1.0 >)<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>
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10 1.6<br>VGS 5.0= V<br>VGS = 4.5V ID = 300mA<br>8 1.4<br>VGS = 4.0V<br>Seen iy, TAL<br>ID = 200mA<br>TA = 150°C<br>6 TA = 125°C 1.2<br>A. fi<br>4 1.0<br>TA = 85°C<br>2 TA = 25°C 0.8<br>TA = -55°C<br>0 0.6<br>STEELE 1 ALLELE<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>5.0 COCO 2.0<br>4.5<br>1.8<br>4.0<br>PERERA EEE<br>1.6<br>3.5 ID = 1mA<br>See Ae 1.4 a<br>3.0<br>1.2 ID = 250µA<br>2.5<br>VGS = 4.0V<br>ID = 200mA Sf 1.0 SS<br>2.0<br>1.5 eo VGS 5.0= V 0.8 TS<br>ID = 300mA<br>1.0 aos} 0.6 Eee<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>0.8 ee<br>0.7 ee ca<br>0.6 ee<br>0.5<br>0.4 T A = 150°C<br>TA = 125°C<br>yao<br>0.3 ie |e<br>TA = 85°C<br>0.2 TG T A = 25°C<br>Ir TA = -55°C<br>0.10 wy,<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>)Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>
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**DMN63D8LDWQ**
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
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A<br>SOT363<br>Dim Min Max Typ<br>A 0.10 0.30 0.25<br>B C<br>B 1.15 1.35 1.30<br>C 2.00 2.20 2.10<br>eee a D 0.65 Typ<br>F 0.40 0.45 0.425<br>H al coon H 1.80 2.20 2.15<br>J 0 0.10 0.05<br>K M K 0.90 1.00 1.00<br>L 0.25 0.40 0.30<br>J M 0.10 0.22 0.11<br>D F L<br>α 0° 8° -<br>| {[ |[|<br>All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
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C2 C2<br>ae<br>j G a C1<br>Z<br>Y<br>ooo<br>X<br>**----- End of picture text -----**<br>
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Dimensions Value (in mm)<br>Z 2.5<br>G 1.3<br>X 0.42<br>Y 0.6<br>C1 1.9<br>C2 0.65<br>**----- End of picture text -----**<br>
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## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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Updated at June 9, 2026
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