DMN62D4LDW-13

**DMN62D4LDW** po 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** ~~Cc~~ 

|**Product Summaryy**<br>~~Cc~~|**Product Summaryy**<br>~~Cc~~|**Product Summaryy**<br>~~Cc~~|
|---|---|---|
|~~Cc~~|||
|**BVDSS**<br>~~Cc~~|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|60V|3.0Ω@VGS= 10V|261mA|
||4.0Ω@VGS= 4.5V|226mA|



## **Features and Benefits** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

- Motor Control 

- Power Management Functions 

## **Mechanical Data** 

- Case: SOT363 

- Case Material:  Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram 

- 

  Weight: 0.006 grams (Approximate) 

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SOT363  D1 D2 D2 G1 S1<br>G1 G2<br>ESD PROTECTED<br> @ Gate Protection Diode & S1  8 Gate Protection Diode S2 |... S2 G2 D1<br>Top View  Equivalent Circuit  Top View<br>Internal Schematic<br>Ordering Information (Note 4)<br>**----- End of picture text -----**<br>


**Part Number Case Packaging** DMN62D4LDW-7 SOT363 3,000/Tape & Reel ~~SSE~~ DMN62D4LDW-13 SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

## **SOT363** 

2D4 = Product Type Marking Code **2D4 YM** YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key **Year 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code** H I J K L M N O P R S T ~~ee~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~-_———fF~~ **Code** 1 2 3 4 5 6 7 8 9 O N ~~+~~ D DMN62D4LDW 1 of 7 November 2020 Document number: DS43031 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

**DMN62D4LDW** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|60|V|
|Gate-Source Voltage|VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS = 10V|Steady State|TTAA = +25°C  = +70°C|ID|261 208|mA|
|Maximum Continuous Body Diode Forward Current (Note 6)|IS|261|mA|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|IDM|1.1|A|
|Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)|ISM|1.1|A|

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## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Total Power Dissipation (Note 5)|PD|0.33|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|379|°C/W|
|Total Power Dissipation (Note 6)|PD|0.45|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|278|°C/W|
|Operating and Storage Temperature Range|TJ,|TSTG|-55 to +150|°C|

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|ts|Characteristic|Sy|I|mbol|Min|TD|Typ|(ND|Max|Unit|Test Condition|
|OFF CHARACTERISTICS|(Note 7)|
|Drain-Source Breakdown Voltage|BVDSS|60|—|—|V|VGS = 0V, ID = 250µA|
|a|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS = 60V, VGS = 0V|
|nD|Gate-Source Leakage|RID|IGSS|ID|—|—|DN|10|µA|(OO|VGS = 20V, VDS = 0V|
|ON CHARACTERISTICS|(Note 7)|
|ry|Gate Threshold Voltage|VGS|Ds|(TH)|1.0|—|(I|2.0|(I|V|VDS = VGS, ID = 250µA|
|1.3|3.0|VGS = 10V, ID = 200mA|
|ee|Static Drain-Source On-Resistance|RDS(ON)|—|1.5|4.0|Ω|VGS = 4.5V, ID = 150mA|
|nD|Diode Forward Voltage|RID|VSD|ID|—|0.8|DN|1.4|V|(OO|VGS = 0V, IS = 115mA|
|DYNAMIC CHARACTERISTICS|(Note 8)|
|rs|InOutput Caput Capacitance pacitance|ts|CCossiss|— —|ns|I|4.5 41|— —|ppF F|VDS = 30V, VGS = 0V|
|f = 1.0MHz|
|Reverse Transfer Capacitance|Crss|—|2.7|—|pF|
|———|Gate Resistance|Rg|—|224|—|Ω|f = 1MHz , VGS = 0V, VDS = 0V|
|ns|Total Gate Charge  (VGS = 4.5V)|Is|Qg|I|—|I|0.51|—|nC|
|rrr|Total Gate Charge  (VGS = 10V)|Qg|—|1.04|—|nC|VDS = 15V,|
|Gate-Source Charge|Qgs|—|0.16|—|nC|ID = 200mA|
|Gate-Drain Charge|Qgd|—|0.18|—|nC|
|—_—|Turn-On Delay Time|tD(|rs|ON)|—|ns|6.9|—|e|ns|ee|
|Turn-On Rise Time|tR|—|5.8|—|ns|VDD = 30V, VGS = 10V,|
|Turn-Off Delay Time|tD(OFF)|—|37.8|—|ns|RG = 150Ω, ID = 200mA|
|Turn-Off Fall Time|tF|—|14.3|—|ns|
|—————|ee|
|Reverse Recovery Time|tRR|—|88|—|ns|IF = 1A, di/dt = 100A/μs|
|—_————|Reverse Recovery Charge|QRR|—|29|—|nC|IF = 1A, di/dt = 100A/μs|

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Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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0.8<br>VGS = 3.5V<br>0.6 /lf a<br>f— VGS = 10.0V<br>VGS = 5.0V<br>VGS = 4.5V<br>0.4 &£pif VGS = 4.0V VGS = 3.0V<br>0.2<br>VGS = 2.5V<br>p —-<br>VGS = 2.2V<br>0.0<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>3<br>2.5<br>{ttt tt<br>2 Fite<br>VGS = 4.5V<br>1.5 a ><br>1 = — VGS = 10V<br>0.5 Z ane fi— 7] |<br>0<br>0 pitti 0.1 0.2 0.3 0.4  tt 0.5 0.6 0.7 0.8<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>4<br>VGS = 10V<br>3.5<br>3 TJ = 150℃<br>CH A<br>2.5<br>a a a<br>2 TJ = 125℃<br>ae a<br>1.5 — TJ = 85℃<br>1 TJ = 25℃<br>0.5 e S e TJ = -55 e ℃ s<br>0 PP ott) EL<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Junction Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.8<br>VDS = 5V<br>0.7<br>e e<br>0.6<br>2<br>0.5<br>fe<br>0.4<br>0.3<br>0.2<br>TJ = 150℃<br>0.1 es TJ = 125℃ TJT = 25J = 85℃℃<br>0 TJ = -55℃<br>0 1 2 3 4<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>50<br>45<br>40 SHEE<br>35 CYTES<br>30<br>CTE EEE<br>25<br>20 CTE ID = 200mA E EE<br>15<br>10 C PaOEt rr  CCE E  EoeeP<br>5<br>0 CHEE EEE<br>0 2 4 6 8 10 12 14 16 18 20<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.4<br>2.2<br>2<br>1.8 VGS = 10V, ID = 200mA<br>FB<br>1.6 mea<br>1.4<br>eae<br>1.2 OY<br>1 VGS = 4.5V, ID = 150mA<br>0.8<br>0.6 a ee cane<br>0.4 ATE<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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4<br>3.5<br>3 ee<br>2.5<br>CCE VGS = 4.5V, ID = 150mA A<br>2 O O<br>1.5<br>a e so<br>1<br>VGS = 10V, ID = 200mA<br>0.5 ann = aa<br>0 PPPS<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction<br>Temperature<br>0.8<br>VGS = 0V<br>0.7<br>0.6 e e | ee<br>0.5<br>0.4 ee<br>0.3 en ie<br>TJ = 125 [o] C<br>0.2 HAG<br>TJ = 150 [o] C TJ = 85 [o] C<br>0.1 HH} TJ = 25 [o] C<br>TJ = -55 [o] C<br>0 ODD<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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Figure 9. Diode Forward Voltage vs. Current<br>**----- End of picture text -----**<br>


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10<br>8<br>6<br>4 VDS = 15V, ID = 200mA<br>2<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>Qg (nC)<br>Figure 11. Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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2<br>1.8<br>ee ID = 1mA<br>1.6<br>SR<br>1.4 S S<br>ID = 250μA<br>1.2 O ooR S<br>1<br>e f i ttytys<br>0.8 PE EEL Ly<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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1000<br>f = 1MHz<br>p o<br>100<br>Ciss<br>pa |<br>— —<br>10<br>Coss<br>Me | a<br>SS ]<br>Crss<br>1 es<br>0 10 20 30 40 50 60<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)CJ<br>**----- End of picture text -----**<br>


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10<br>R<br>DS(ON)<br>Limited<br>PW = 100µs<br>1<br>0.1<br>PW = 1ms<br>PW = 10ms<br>TJ(Max) = 150 ℃ LH PW = 100ms                                               ISON TT<br>0.01 TA = 25 ℃ PW = 1s<br>Single Pulse PW = 10s<br>DUT on  DC<br>1*MRP Board<br>0.001 VGS = 10V e eee ll<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>pS sh si gS SST a 8<br>ee na ne ee eeat<br>D = 0.7<br>SSObAasaiit inmost cme eect ae ana i mal<br>D = 0.5<br>SC HL pee THAT TERT EIT PTA<br>D = 0.3<br>Pee NTUIE TIN LN I D = 0.9 ATITTEIT ETT<br>LY N<br>0.1 E SEsalla MAA<br>PE a<br>eo D = 0.1 Ee ee Fe Ee EE Ett<br>a ett 7 | | |<br>D = 0.05<br>TIT<br>Fra [ECHR] 9” AM | |<br>EF, AN<br>A WE<br>NY Me ELITE ETT TIES VETTE ETT TIT TT<br>ee<br>0.01 eA, D = 0.02<br>RHE EH EETE<br>TSHLerAA D = 0.01 PHP a EH HEa a ee el<br>Lt | al D = 0.005 THMeeCCTMETTLE<br>D = Single Pulse RθJA (t) = r(t) * RθJA<br>RθJA = 379℃/W<br>Duty Cycle, D = t1/t2<br>0.001 G ee |<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>E E1 SOT363<br>Dim  Min  Max  Typ<br>A1  0.00  0.10  0.05<br>A2  0.90 1.00 0.95<br>b  0.10 0.30 0.25<br>c 0.10 0.22  0.11<br>F<br>b D  1.80 2.20 2.15<br>E  2.00 2.20 2.10<br>E1  1.15 1.35 1.30<br>D<br>e  0.650 BSC<br>F  0.40 0.45 0.425<br>L  0.25 0.40 0.30<br>a  0° 8° --<br>A2<br>All Dimensions in mm<br>c a<br>A1 e fan L<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>C<br>Y1 o oo, G<br>Y<br>X<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**G**|1.300|
|**X**|0.420|
|**Y**|0.600|
|**Y1**|2.500|



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## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

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6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

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Copyright © 2020 Diodes Incorporated 

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