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DMN61D8LVTQ-7
Dual MOSFET, N Channel, 60 V, 60 V, 630 mA, 630 mA, 1.8 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: TSOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.09W
- Power Dissipation P Channel: 1.09W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 630mA
- Continuous Drain Current Id P Channel: 630mA
- Drain Source On State Resistance N Channel: 1.8ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.137 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMN61D8LVTQ** ; **INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|60V|1.8Ω@VGS= 5V|630mA|
||2.4Ω@VGS= 3V||
## **Features and Benefits**
- Provides a reliable and robust interface between sensitive logic and DC relay coils
- Replaces 3 to 4 discrete components enabling PCB footprint to be reduced
- Internal active clamp removes the need for external zener diode
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
## **Description and Applications**
DMN61D8LVTQ provides a single component solution for switching inductive loads such as relays, solenoids, and small DC motors in automotive applications, without the need of a freewheeling diode. DMN61D8LVTQ accepts logic level inputs, thus allowing it to be driven by logic gates, inverters and microcontrollers. It is ideally suited for door, window and antenna relay coils.
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Mechanical Data**
- Case: TSOT26
- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 **e3**
- Weight: 0.013 grams (Approximate) ©
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ESD Protected Gate<br>**----- End of picture text -----**<br>
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TSOT26<br>**----- End of picture text -----**<br>
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Top View<br>Top View Internal Schematic<br>**----- End of picture text -----**<br>
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Equivalent Circuit<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 5)
|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN61D8LVTQ-7|TSOT26|3,000/Tape & Reel|
|DMN61D8LVTQ-13|TSOT26|10,000/Tape & Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
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TSOT26<br>**----- End of picture text -----**<br>
1D8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September)
Date Code Key
|Date Code Keyy|||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2016**||||**2017**|||**2018**|||**2019**||||**2020**|||**2021**|||**2022**||
|**Code**|D||||E|||F|||G||||H|||I||||J|
||||||||||||||||||||||||
|**Month**|**Jan**||**Feb**||**Mar**|**Apr**||**May**||**Jun**|||**Jul**||**Aug**|**Sep**||**Oct**||**Nov**||**Dec**|
|**Code**|1||2||3||4|5||6|||7||8|9||O||N||D|
1 of 7 **www.diodes.com**
DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2
December 2016 © Diodes Incorporated
**DMN61D8LVTQ**
|**Maximum Ratings** (@TA= +25°C, unless otherwise specified.)<br>~~eee~~<br>~~SS~~|**Maximum Ratings** (@TA= +25°C, unless otherwise specified.)<br>~~eee~~<br>~~SS~~|**Maximum Ratings** (@TA= +25°C, unless otherwise specified.)<br>~~eee~~<br>~~SS~~|**Maximum Ratings** (@TA= +25°C, unless otherwise specified.)<br>~~eee~~<br>~~SS~~|**Maximum Ratings** (@TA= +25°C, unless otherwise specified.)<br>~~eee~~<br>~~SS~~|**Maximum Ratings** (@TA= +25°C, unless otherwise specified.)<br>~~eee~~<br>~~SS~~|
|---|---|---|---|---|---|
|~~eee~~<br>~~SS~~||||||
|**Characteristic**<br>~~SSS~~|||**Symbol**<br>~~SSS~~<br>~~eee~~|**Value**<br>~~SSS~~<br>~~eee~~|**Units**<br>~~SSS~~<br>~~SS~~|
|Drain-Source Voltage<br>~~oo~~<br>~~—_—.~~|||VDSS<br>~~eee~~<br>~~oo~~<br>|60<br>~~eee~~<br>~~oo~~<br>|V<br>~~SS~~<br>~~oo~~<br>|
|Gate-Source Voltage<br>~~—_—.>>~~<br>~~eeee~~|||VGSS<br>~~>>~~<br>~~ee~~|±12<br>~~>>~~<br>~~ee~~|V<br>~~>>~~|
|Continuous Drain Current (Note 7)<br>~~—_—.~~<br>~~ee~~|Steady<br>State<br><br>~~ee~~<br>~~ee~~|TA= +25°C<br>TA= +70°C<br><br>~~ee~~<br>~~ee~~|ID<br><br>~~ee~~<br>~~ee~~|630<br>500<br><br>~~ee~~<br>~~ee~~|mA<br><br>~~ee~~|
|Maximum Continuous Body Diode Forward Current (Note 7)<br>~~ee ee~~<br>~~i~~|||IS<br>~~ee~~<br>~~i~~<br>~~ee~~|0.5<br>~~ee~~<br>~~i~~<br>~~ee~~|A<br>~~i~~|
|Single Pulse Drain-to-Source Avalanche Energy<br>(For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJInitial = +85°C)<br>~~a~~|||EZ<br>~~a~~<br>~~ee~~|200<br>~~a~~<br>~~ee~~|mJ<br>~~a~~|
|Peak Power Dissipation, Drain-to-Source (Non repetitive current square<br>pulse 1.0ms duration) (TJInitial = +85°C)<br>~~te~~|||PPK<br>~~ee~~<br>~~te~~<br>~~ee~~|20<br>~~ee~~<br>~~te~~<br>~~es~~|W<br>~~te~~|
|Load Dump Pulse, Drain-to-Source, RSOURCE= 0.5Ω, t = 300ms)<br>(For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJInitial = +85°C)<br>~~es~~|||ELD1<br>~~es~~<br>~~ee~~<br>~~ee~~|60<br>~~es~~<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~|
|Inductive Switching Transient 1, Drain-to-Source<br>(Waveform: RSOURCE= 10Ω, t = 2.0ms)<br>(For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJInitial = +85°C)<br>~~ee~~|||ELD2<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|100<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Inductive Switching Transient 2, Drain-to-Source<br>(Waveform: RSOURCE= 4.0Ω, t = 50µs)<br>(For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJInitial = +85°C)<br>~~ee~~|||ELD3<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~en~~|300<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Reverse Battery, 10 Minutes (Drain-to-Source)<br>(For Relay’s Coils/Inductive Loads of 80Ω or more)<br>~~ee~~|||Rev−Bat<br>~~ee~~<br>~~ee~~<br>~~en~~|-14<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|Dual Voltage Jump Start, 10 Minutes (Drain-to-Source)<br>~~oo~~|||Dual−Volt<br>~~en~~<br>~~oo~~|28<br>~~oo~~|V<br>~~oo~~|
|ESD Human Body Model (HBM)<br>~~ooo~~|||ESD<br>~~ooo~~|4,000<br>~~ooo~~|V<br>~~ooo~~|
**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 6)||PD|820|mW|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|154|°C/W|
|Total Power Dissipation (Note 7)||PD|1,090|mW|
|Thermal Resistance, Junction to Ambient (Note 7)|Steady State|RθJA|116|°C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
- Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided.
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DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2
December 2016 © Diodes Incorporated
**DMN61D8LVTQ**
**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**<br>**S**<br>~~=...~~|**Symbol**<br>~~=...~~|**Min**<br>~~=...~~|**Typ**<br>~~=...~~|**Max**<br>**Unit**<br>~~=...~~|**Test Condition**<br>~~=...~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~=...~~||||||
|Drain-Source Breakdown Voltage<br>~~=...~~|BVDSS<br>~~=...~~|60<br>~~=...~~|<br>~~=...~~|<br>V<br>VGS<br>~~=...~~|GS= 0V, ID= 10mA<br>~~=...~~|
|Zero Gate Voltage Drain Current<br>~~=...~~|IDSS<br>~~=...~~<br>~~ee~~|<br>~~=...~~<br>~~ee~~|<br>~~=...~~<br>~~ee~~|50<br>0.5<br>µA<br>VDS<br>VDS<br>~~=...~~<br>~~ee~~|DS= 60V, VGS= 0V<br>DS= 12V, VGS= 0V<br>~~=...~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|±90<br>±60<br>µA<br>VGS<br>VGS<br>~~ee~~<br>~~ee~~|GS= ±5V, VDS= 0V<br>GS= ±3V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~ee ee ee ee~~||||||
|Gate Threshold Voltage<br>V|VGS(TH)|1.3||2.0<br>V<br>VDS|DS= VGS, ID= 1mA|
|Static Drain-Source On-Resistance<br>R|RDS(ON)||1.1<br>1.4|1.8<br>2.4<br>Ω<br>VGS<br>VGS|GS= 5V, ID= 0.15A|
||||||GS= 3V, ID= 0.15A|
|Forward Transfer Admittance||Yfs||80||<br>ms<br>VDS|DS= 12V, ID= 0.15A|
|Diode Forward Voltage|VSD|||1.2<br>V<br>VGS|GS= 0V, IS= 0.15A|
|**DYNAMIC CHARACTERISTICS(Note 9)**||||||
|Input Capacitance<br>~~EE~~|Ciss<br>~~EE~~|<br>~~EE~~|12.9<br>~~EE~~|<br>pF<br>VDS<br>f = 1.0MHz<br><br>pF<br><br>pF<br>~~EE~~<br>~~ee~~|DS= 12V, VGS= 0V<br>f = 1.0MHz<br>~~EE~~|
|Output Capacitance<br>~~EE~~|Coss<br>~~EE~~|<br>~~EE~~|17<br>~~EE~~|||
|Reverse Transfer Capacitance<br>~~EE~~<br>~~————~~|Crss<br>~~EE~~<br>~~ee~~|<br>~~EE~~<br>~~ee~~|0.84<br>~~EE~~<br>~~ee~~|||
|Total Gate Charge<br>~~EE~~<br>~~ee~~<br>~~————~~|Qg<br>~~EE~~<br>~~ee~~<br>~~ee~~|<br>~~EE~~<br>~~ee~~<br>~~ee~~|0.74<br>~~EE~~<br>~~ee~~<br>~~ee~~|<br>nC<br>VGS<br>ID=150mA<br><br>nC<br><br>nC<br>~~EE~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|GS= 5V, VDS= 12V,<br>=150mA<br>~~EE~~<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~<br>~~————~~|Qgs<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|0.19<br>~~ee~~<br>~~ee~~|||
|Gate-Drain Charge<br>~~ee~~<br>~~————~~|Qgd<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|0.16<br>~~ee~~<br>~~ee~~|||
|Turn-On Delay Time<br>~~ee~~<br>~~————~~|tD(ON)<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|131<br>~~ee~~<br>~~ee~~|<br>ns<br>VDD<br><br>ns<br><br>ns<br><br>ns<br>~~ee~~<br>~~ee~~<br>~~ee~~|DD= 12V, VGS= 5V<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR<br>~~ee~~|<br>~~ee~~|301<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)<br>~~ee~~|<br>~~ee~~|582<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tF<br>~~ee~~|<br>~~ee~~|440<br>~~ee~~|||
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1 1<br>VGS = 10V VGS = 3.0V<br>VGS = 4.0V VDS = 5.0V<br>0.8 V GS = 4.5V 0.8<br>VGS = 5.0V<br>0.6 V GS = 2.5V 0.6<br>TA = 150°C<br>0.4 pe 0.4 oe TA = 125°C<br>TA = 85°C<br>0.2 ff 0.2 TA = 25°C<br>VGS = 2.0V<br>0 po VGS = 1.8V 0 Ane TA = -55°C<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5<br>V DS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br> I<br>D<br>, DRAIN CURRENT (A)<br>D<br> I<br>**----- End of picture text -----**<br>
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DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2
December 2016 © Diodes Incorporated
**DMN61D8LVTQ**
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2 5<br>1.8<br>TH O 4 PT TTT<br>1.6<br>VGS = 3V<br>1.4<br>3<br>A Oe<br>1.2 VGS = 5V<br>1 case“pry tt tt to 2 a I D = 150mA a<br>oe<br>0.8<br>Saeeennen 1 ee<br>0.6<br>SCO | {| |<br>0.4<br>0.1 PEE 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 et | |dt.<br>ID, DRAIN-SOURCE CURRENT (A) 0 2 4 6 8 10 12<br>Figure 3 Typical On-Resistance vs. VGS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage Figure 4 Typical Transfer Characteristic<br>3 2<br>VGS = 5V<br>2.5 1.8 VGS = 5V<br>TA = 150°C ID = 150mA<br>Pi tT 1.6 TTT<br>2 T A = 125°C VGS = 3V<br>1.5 T A = 85°C 1.4 I D = 150mA<br>1.2<br>1 Ser TA = 25 ° C Of<br>1<br>0.5 SE T A = -55°C<br>0.8<br>0<br>0 PTET 0.2 0.4 0.6 0.8 1 0.6 ffeeer<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) -50 -25 TJ, JUNCTION TEMPERATURE (0 25 50 75 100 125C) 150<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>3 1.8<br>1.7<br>2.5 EREREEEE mf ttt tt<br>1.6 I D = 1mA<br>VGS = 3V<br>2 I D = 150mA 1.5<br>1.4 I D = 250µA<br>1.5 He VGS = 5V 1.3 ERS<br>ID = 150mA<br>1 Car] 1.2 AP SRREE<br>pea CCAS<br>1.1<br>0.5<br>1<br>0 eT) = 0.9 ECCS<br>-50 LETT -25 0 25 50 TE 75 100 125 150 -50 CCE -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TT J , JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE (°C) C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2
December 2016 © Diodes Incorporated
**DMN61D8LVTQ**
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100<br>f = 1MHz<br>PN<br>Gee<br>Cississ<br>10<br>Cossoss<br>——<br>XK | Ff f[ Ff [|ff]<br>===<br>1<br>MA | C rss<br>——<br>0 ee<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>
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1 100<br>PN<br>0.8 “lp TA = 150°C Gee<br>Cississ<br>TA = 125°C 10<br>0.6 dh T A = 85°C —— Cossoss<br>XK | Ff f[ Ff<br>0.4 eee iil TA = 25°C ===<br>1<br>HT Fy MA | C rss<br>0.2 TA = -55°C<br>| ——<br>0 L 0 ee<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35<br>V SD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>7<br>6 ane<br>5<br>4 TL KE<br>a<br>3 VDS = 12V<br>ID = 150mA<br>2 FREEeo<br>1<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate Charge<br>1<br>SS D = 0.9 SSS<br>LTHe D = 0.7D = 0.5 ST rr<br>a D = 0.3 a ee<br>0.1<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>aA<br>0.01<br>D = 0.01<br>D = 0.005<br>Sti ati ati aa R thja (t) = r(t) * R thja<br>D = Single Pulse RDuty Cycle, D = t1/ t2 JA = 154°C/W<br>0.001 Seeeht amaevPETRI(neTDI EOELELIILEIMLLT llll<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance 12<br>, SOURCE CURRENT (A)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2
December 2016 © Diodes Incorporated
**DMN61D8LVTQ**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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TSOT26<br>D<br>e1 0 1(4x)<br>E1/2<br>E/2<br>E1 E c<br>Gauge Plane<br>0<br>Seating Plane<br>L<br>L2<br>hy<br>e b 0 1(4x)<br>A2<br>A1<br>A<br>Seating Plane<br>**----- End of picture text -----**<br>
|**TSOT26**<br>**Dim**<br>**Min**<br>**M**<br>**T**|**TSOT26**<br>**Dim**<br>**Min**<br>**M**<br>**T**|**TSOT26**<br>**Dim**<br>**Min**<br>**M**<br>**T**|**TSOT26**<br>**Dim**<br>**Min**<br>**M**<br>**T**|
|---|---|---|---|
|**Dim**<br>**A**|**Min**|**Max **<br>1.00|**Typ**|
|**A**||1.00||
|**A1**|0.010|0.100||
|**A2**|0.840|0.900||
|**D**|2.800|3.000|2.900|
|**E**|2.800BSC|||
|**E1**<br>**b**|1.500<br>0.300|1.700<br>0.450|1.600|
|**b**<br>**c**|0.300<br>0.120|0.450<br>0.200|<br>|
|**e**|0.950BSC|||
|**e1**|1.900BSC|||
|**L**|0.30|0.50||
|**L2**|0.250BSC|||
|**θ**|0°|8°|4°|
|**θ1**<br>**All Dimensions in mm**|4°<br>**All Dimensions in mm**|12°<br>**All Dimensions in mm**|<br>**All Dimensions in mm**|
|**All Dimensions in mm**||||
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**TSOT26**
C Y1 ~~‘000~~ Y X ~~OOo:~~
|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.950|
|**X**|0.700|
|**Y**|1.000|
|**Y1**|3.199|
6 of 7 **www.diodes.com**
DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2
December 2016 © Diodes Incorporated
**DMN61D8LVTQ**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
**www.diodes.com**
7 of 7 **www.diodes.com**
DMN61D8LVTQ Document number: DS37822 Rev. 3 - 2
December 2016 © Diodes Incorporated
Updated at June 9, 2026
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