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DMN61D8LVT-7
Dual MOSFET, N Channel, 60 V, 60 V, 630 mA, 630 mA, 1.8 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.09W
- Power Dissipation P Channel: 1.09W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 630mA
- Continuous Drain Current Id P Channel: 630mA
- Drain Source On State Resistance N Channel: 1.8ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.158 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMN61D8L/LVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---| |||| |**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C, SOT23**| |60V|1.8Ω@VGS= 5V|470mA| ||2.4Ω@VGS= 3V|| ## **Features and Benefits** - Provides a more reliable and robust interface between sensitive logic and DC relay coils - Replaces 3 to 4 discrete components enabling PCB footprint to be reduced - Internal active clamp removes the need for external zener diode - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** ## **Description and Applications** DMN61D8L/LVT provides a single component solution for switching inductive loads such as relays, solenoids, and small DC motors in automotive applications, without the need of a freewheeling diode. DMN61D8L/LVT accepts logic level inputs, thus allowing it to be driven by logic gates, inverters, and microcontrollers. It is ideally suited for doors, windows, and antenna relay coils. - **The Automotive-Compliant Parts are Available Under Separate Datasheets (DMN61D8LQ and DMN61D8LVTQ)** ## **Mechanical Data** ## **Case: SOT23** - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish – Matte Tin Annealed over Alloy 42 Leadframe. (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 - Terminals Connections: See Diagram - Weight: 0.008 grams (Approximate) ## **Case: TSOT26** - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 **ESD Protected** - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals Connections: See Diagram - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.013 grams (Approximate) **==> picture [142 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> SOT23<br>D<br>G S<br>>.<br>TSOT26<br>**----- End of picture text -----**<br> **==> picture [185 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> || Equivalent Circuit<br>**----- End of picture text -----**<br> **==> picture [151 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> Top View Top View<br>Internal Schematic<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)| |---|---|---| |||| |**Part Number**|**Case**|**Packaging**| |DMN61D8L-7|SOT23|3,000/Tape & Reel| |DMN61D8L-13|SOT23|10,000/Tape & Reel| |DMN61D8LVT-7|TSOT26|3,000/Tape & Reel| |DMN61D8LVT-13|TSOT26|10,000/Tape & Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 1 of 9 **www.diodes.com** DMN61D8L/LVT June 2018 © Diodes Incorporated Document number: DS37630 Rev. 4 - 2 **DMN61D8L/LVT** ## **Marking Information** |~~To~~|~~To~~|~~To~~|~~To~~|~~To~~|~~To~~| |---|---|---|---|---|---| |**Characteristic**<br>~~re~~|||**Symbol**<br>~~re~~|**Value**<br>~~re~~|**Unit**<br>~~re~~| |Drain-Source Voltage<br>~~re~~|||VDSS<br>~~re~~|60<br>~~re~~|V<br>~~re~~| |Gate-Source Voltage<br>~~GO~~<br>~~ee~~|||VGSS<br>~~GO~~|±12<br>~~GO~~<br>~~ee~~|V<br>~~GO~~<br>~~ee~~| |Continuous Drain Current (Note 6) SOT23<br>~~ee~~|Steady<br>State<br>~~ee~~<br>~~ee~~<br>~~ee~~|TA= +25°C<br>TA= +70°C<br>~~ee~~|ID<br>~~ee~~|470<br>370<br>~~ee~~<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~<br>~~ee~~<br>~~ee~~| |Continuous Drain Current (Note 6) TSOT26<br>~~ee~~|Steady<br>State<br>~~ee~~<br>~~ee~~<br>~~ee~~|TA= +25°C<br>TA= +70°C<br>~~ee~~|ID<br>~~ee~~|630<br>500<br>~~ee~~<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~<br>~~ee~~<br>~~ee~~| |Maximum Continuous Body Diode Forward Current (Note 6)<br>~~ee~~<br>~~a~~|||IS<br>~~a~~<br>~~ee~~|0.5<br>~~ee~~<br>~~a~~<br>~~ee~~|A<br>~~ee~~<br>~~a~~<br>~~ee~~| |Single Pulse Drain-to-Source Avalanche Energy<br>(for relay coils/inductive loads of 80Ωor higher) (TJ initial =+85°C)<br>~~ee~~|||EZ<br>~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~ee~~|mJ<br>~~ee~~<br>~~ee~~| |Peak Power Dissipation, Drain-to-Source (non-repetitive current square<br>pulse 1.0ms duration) (TJ initial = +85°C)<br>~~a~~|||PPK<br>~~ee~~<br>~~a~~<br>~~ee~~|20<br>~~ee~~<br>~~a~~<br>~~ee~~|W<br>~~ee~~<br>~~a~~| |Load Dump Pulse, Drain-to-Source, RSOURCE = 0.5Ω, t = 300ms)<br>(for relay coils/inductive loads of 80Ω or higher) (TJ Initial = +85°C)<br>~~ee~~|||ELD1<br>~~ee~~<br>~~ee~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~| |Inductive Switching Transient 1, Drain-to-Source<br>(Waveform: RSOURCE= 10Ω, t = 2.0ms)<br>(for relay coils/inductive loads of 80Ω or higher) (TJ Initial = +85°C)<br>~~ee~~|||ELD2<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~| |Inductive Switching Transient 2, Drain-to-Source<br>(Waveform: RSOURCE = 4.0Ω, t = 50µs)<br>(for relay coils/inductive loads of 80Ω or higher) (TJ Initial = +85°C)<br>~~ee~~|||ELD3<br>~~ee~~<br>~~ee~~<br>~~ee~~|300<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~| |Reverse Battery, 10 Minutes (Drain-to-Source)<br>(for relay coils/inductive loads of 80Ω or higher)<br>~~ee~~|||Rev−Bat<br>~~ee~~<br>~~ee~~|-14<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~| |Dual Voltage Jump Start, 10 Minutes (Drain-to-Source)<br>~~a~~|||Dual−Volt<br>~~a~~|28<br>~~a~~|V<br>~~a~~| |ESD Human Body Model (HBM)<br>~~fe~~|||ESD<br>~~fe~~|4,000<br>~~fe~~|V<br>~~fe~~| 2 of 9 **www.diodes.com** DMN61D8L/LVT Document number: DS37630 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMN61D8L/LVT** **Thermal Characteristics (SOT23)** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics (SOT23)(SOT23)SOT23)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics (SOT23)(SOT23)SOT23)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics (SOT23)(SOT23)SOT23)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics (SOT23)(SOT23)SOT23)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics (SOT23)(SOT23)SOT23)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Total Power Dissipation (Note 5)||PD|390|mW| |Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|321|°C/W| |Total Power Dissipation (Note 6)||PD|610|mW| |Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|208|°C/W| |Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C| **Thermal Characteristics (TSOT26)** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics (TSOT26)(TSOT26)TSOT26)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics (TSOT26)(TSOT26)TSOT26)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics (TSOT26)(TSOT26)TSOT26)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics (TSOT26)(TSOT26)TSOT26)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics (TSOT26)(TSOT26)TSOT26)) **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Total Power Dissipation (Note 5)||PD|820|mW| |Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|154|°C/W| |Total Power Dissipation (Note 6)||PD|1090|mW| |Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|116|°C/W| |Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C| ## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |~~FO~~<br>~~CO~~<br>~~I~~||||||| |**Characteristic**<br>~~GG~~|**Symbol**<br>~~GG~~|**Min**<br>~~GG~~|**Typ**<br>~~GG~~<br>~~FO~~|**Max**<br>~~GG~~<br>~~CO~~|**Unit**<br>~~GG~~<br>~~I~~|**Test Condition**<br>~~GG~~| |**OFF CHARACTERISTICS(Note 7)**<br>~~FO~~<br>~~CO~~<br>~~I~~<br>~~re~~||||||| |Drain-Source Breakdown Voltage<br>~~re~~|BVDSS<br>~~re~~|60<br>~~re~~|<br>~~re~~|<br>~~re~~|V<br>~~re~~|VGS= 0V, ID= 10mA<br>~~re~~| |Zero Gate Voltage Drain Current<br>~~i~~|IDSS|||50<br>0.5|µA|VDS= 60V, VGS= 0V<br>VDS= 12V, VGS= 0V| |Gate-Source Leakage<br>~~Ee~~|IGSS<br>~~Ee~~|<br>~~Ee~~|<br>~~Ee~~|±90<br>±60<br>~~Ee~~|µA<br>~~Ee~~|VGS= ±5V, VDS= 0V<br>VGS= ±3V, VDS= 0V<br>~~Ee~~| |**ON CHARACTERISTICS(Note 7)**<br>~~a~~<br>~~eG~~<br>~~CO~~<br>~~OO~~||||||| |Gate Threshold Voltage<br>~~a~~|VGS(TH)|1.3<br>~~eG~~|<br>~~eG~~|2.0<br>~~CO~~|V<br>~~OO~~|VDS= VGS, ID= 1mA| |Static Drain-Source On-Resistance<br>~~a~~<br>~~ee~~|RDS(ON)<br>~~ee~~|<br>~~eG~~<br>~~ee~~|1.1<br>1.4<br>~~eG~~<br>~~ee~~|1.8<br>2.4<br>~~CO~~<br>~~ee~~|Ω<br>~~OO~~<br>~~ee~~|VGS=5V, ID= 0.15A<br>~~ee~~| |||||||VGS= 3V, ID= 0.15A<br>~~ee~~| |Forward Transfer Admittance<br>~~I~~||Yfs|<br>~~I~~|80<br>~~I~~|<br>~~I~~|<br>~~I~~|ms<br>~~I~~|VDS=12V, ID= 0.15A<br>~~I~~| |Diode Forward Voltage<br>~~I~~|VSD<br>~~I~~|<br>~~I~~|<br>~~I~~|1.2<br>~~I~~|V<br>~~I~~|VGS= 0V, IS= 0.15A<br>~~I~~| |**DYNAMIC CHARACTERISTICS(Note 8)**||||||| |Input Capacitance<br>~~BS~~|Ciss<br>~~BS~~|<br>~~BS~~|12.9<br>~~BS~~|<br>~~BS~~|pF<br>~~BS~~|VDS= 12V, VGS= 0V<br>f = 1.0MHz<br>~~BS~~| |Output Capacitance<br>~~BS~~|Coss<br>~~BS~~|<br>~~BS~~|17<br>~~BS~~|<br>~~BS~~|pF<br>~~BS~~|| |Reverse Transfer Capacitance<br>~~BS~~|Crss<br>~~BS~~|<br>~~BS~~|0.84<br>~~BS~~|<br>~~BS~~|pF<br>~~BS~~|| |Total Gate Charge<br>~~es~~<br>~~re~~|Qg<br>~~es~~<br>~~re~~|<br>~~es~~<br>~~re~~|0.74<br>~~es~~<br>~~re~~|<br>~~es~~<br>~~re~~|nC<br>~~es~~<br>~~re~~|VGS= 5V, VDS= 12V,<br>ID=150mA<br>~~re~~<br>~~ee~~| |Gate-Source Charge<br>~~re~~|Qgs<br>~~re~~|<br>~~re~~|0.19<br>~~re~~|<br>~~re~~|nC<br>~~re~~|| |Gate-Drain Charge<br>~~re~~<br>~~——~~|Qgd<br>~~re~~<br>~~——~~|<br>~~re~~|0.16<br>~~re~~|<br>~~re~~<br>~~ee~~|nC<br>~~re~~<br>~~ee~~|| |Turn-On DelayTime<br>~~re~~<br>~~——~~|tD(ON)<br>~~re~~<br>~~——~~|<br>~~re~~|131<br>~~re~~|<br>~~re~~<br>~~ee~~|ns<br>~~re~~<br>~~ee~~|VDD= 12V, VGS= 5V<br>~~re~~<br>~~ee~~| |Turn-On Rise Time<br>~~pO~~<br>~~——~~|tR<br>~~——~~||301|<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off DelayTime<br>~~——~~|tD(OFF)<br>~~——~~||582|<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~——~~|tF<br>~~——~~||440|<br>~~ee~~|ns<br>~~ee~~|| Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 3 of 9 **www.diodes.com** DMN61D8L/LVT Document number: DS37630 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMN61D8L/LVT** **==> picture [480 x 646] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1<br>VGS = 10V VGS = 3.0V<br>VGS = 4.0V VDS = 5.0V<br>0.8 fe V GS = 4.5V 0.8<br>VGS = 5.0V<br>0.6 V GS = 2.5V 0.6<br>a [Lye TA = 150°C<br>0.4 0.4 TA = 125°C<br>TA = 85°C<br>0.2 aa 0.2 + 4<br>| ee) TA = 25°C<br>VGS = 2.0V<br>0 [———_- VGS = 1.8V 0 BD TA = -55°C<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5<br>V DS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>2 5<br>1.8<br>Tora So 4 P PT<br>1.6<br>VGS = 3V<br>1.4<br>3<br>ee AE<br>1.2 VGS = 5V<br>Sept<br>1 See 2 ET I D = 150mA<br>0.8<br>eR 1<br>0.6 CoCeeeeee S| tT<br>0.4<br>0.1 Saeeeeeee 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 Py |Ty]<br>ID, DRAIN-SOURCE CURRENT (A) 0 2 4 6 8 10 12<br>Figure 3 Typical On-Resistance vs. VGS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage Figure 4 Typical Transfer Characteristic<br>3 2<br>VGS = 5V<br>2.5 yf 1.8 aan VGS = 5V WY<br>TA = 150°C ID = 150mA<br>1.6<br>2 See] T A = 125°C HE VGS = 3V<br>1.5 TL T A = 85°C 1.4 TTA I D = 150mA<br>1.2<br>1 Tee) TA = 25 ° C 6$Fe<br>1<br>0.5 T A = -55°C<br>FREE 0.8 Het<br>0<br>0 PTT 0.2 0.4 0.6 0.8 1 0.6 efter<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) -50 -25 TJ, JUNCTION TEMPERATURE (0 25 50 75 100 125C) 150<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>, DRAIN CURRENT (A)<br> I<br>D<br>, DRAIN CURRENT (A)<br>D<br> I<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 4 of 9 **www.diodes.com** DMN61D8L/LVT Document number: DS37630 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMN61D8L/LVT** **==> picture [481 x 654] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1.8<br>1.7<br>2.5 TTT | =—#S<br>1.6 I D = 1mA<br>VGS = 3V<br>2 CCeCP I D = 150mA eH) «= 1.5 AS EE<br>1.4 I D = 250µA<br>1.5 VGS = 5V<br>Ler 1.3 POP SAEE<br>ID = 150mA<br>1 Hee 1.2 ELSE<br>1.1<br>0.5 cer] TTT SeeeeexXe<br>a 1 EEN<br>0 eELELLEL 0.9 WCE EEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate ThreshoFigure 8 Gate Thresho ld Va rr ia tion vs. Ambient Temperaturetion vs. Junction Temperature<br>1 100<br>f = 1MHz<br>0.8 TA = 150°C<br>Ciss<br>TA = 125°C 10<br>0.6 T A = 85°C Coss<br>tL eS=55=2<br>0.4 TA = 25°C<br>1<br>C rss<br>0.2 TA = -55°C<br>| Sseaesee<br>0 iFOD) 0 ==<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>V SD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>7 ee<br>6<br>5 ae ae<br>4 nap 4a<br>3 VDS = 12V<br>ID = 150mA<br>2 o-duaneFee re<br>1 fi TE] Ll<br>0 PCCP<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate Charge<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>GATE-SOURCE VOLTAGE (V)<br>GS,<br>V<br>, SOURCE CURRENT (A)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMN61D8L/LVT Document number: DS37630 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMN61D8L/LVT** —— ## i'm coreeowrRaATE DBD DIODES. **==> picture [29 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SOT23:<br>**----- End of picture text -----**<br> **==> picture [408 x 492] intentionally omitted <==** **----- Start of picture text -----**<br> 1 A SS A SSSSS SC a<br>D = 0.9<br>ieeeer D = 0.7 emseeeet ti<br>a D = 0.5 ccc<br>Ne D = 0.3 eee eee a aaa<br>PTI PEATE | ee | TTT TTT PTT<br>0.1 PE TT TL LIM AATM_ LLIN [UTI<br>bee D = 0.1<br>re ee aa7 ee eee ee ee<br>a AOO<br>D = 0.05<br>Ey TIC CITE IH<br>HE LL A AI ETT<br>Ee D = 0.02<br>0.01 earFe D = 0.01 a ee7Ay | ETNIN E ETT LETITIA LLL Ll<br>D = 0.005<br>Co Ae 9 HH<br>Rthja(t) = r(t) * Rthja<br>a il<br>D = Single Pulse RJA = 323°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12 Transient Thermal Resistance<br>TSOT26:<br>1 LS SS A AS SO OS SS a a<br>a D = 0.9<br>ee D = 0.7<br>PCN D = 0.5 Se eteoe<br>THI D = 0.3 TEIN | ee TTT EP<br>SE TIM EET LAME LAINE<br>0.1<br>e D = 0.1 e eaa aaaees es a Gan T eS”A cide ATLL LATTE TT} ETT ETT<br>eee<br>D = 0.05 [CITT]<br>Ey [CCI] CUT ARh TE a<br>AE a A<br>D = 0.02<br>RD lA<br>0.01 PUPe D = 0.01 aeaLY ATIIN FATIMA EIT UT Til<br>oT D = 0.005 OA Pe HIT<br>Za D = Single Pulse R RDuty Cycle, D = t1/ t2th JA ja (t) = r(t) * R = 154°C/Wthja UT<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 6 of 9 **www.diodes.com** DMN61D8L/LVT Document number: DS37630 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMN61D8L/LVT** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **SOT23** **==> picture [268 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> All 7°<br>H<br>GAUGE PLANE<br>0.25<br>J<br>K1 K<br>a<br>A M<br>L L1<br>C B<br>D<br>F G<br>Lo<br>**----- End of picture text -----**<br> |**SOT23**|**SOT23**|**SOT23**|**SOT23**| |---|---|---|---| |**Dim**|**Min**|**Max**|**Typ**| |**A**<br>**B**|0.37<br>1.20|0.51<br>1.40|0.40<br>1.30| |**C**|2.30|2.50|2.40| |**D**|0.89|1.03|0.915| |**F**|0.45|0.60|0.535| |**G**|1.78|2.05|1.83| |**H**|2.80|3.00|2.90| |**J**|0.013|0.10|0.05| |**K**|0.890|1.00|0.975| |**K1**|0.903|1.10|1.025| |**L**<br>~~===~~|0.45<br>~~===~~|0.61<br>~~===~~|0.55<br>~~===~~| |**L1**<br>~~===~~|0.25<br>~~===~~|0.55<br>~~===~~|0.40<br>~~===~~| |**M**<br>~~===~~|0.085 0.150 0.110<br>~~===~~|0.085 0.150 0.110<br>~~===~~|0.085 0.150 0.110<br>~~===~~| |**a**<br>~~—~~|0°<br>~~—~~|8°<br>~~—~~|--<br>~~—~~| |**All Dimensions in mm**<br>~~—~~|||| ## **TSOT26** **==> picture [319 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>e1 0 1(4x)<br>E1/2<br>E/2<br>E1 E c<br>Gauge Plane<br>0<br>Seating Plane<br>L<br>L2<br>hs:<br>e b 0 1(4x)<br>A2<br>A1<br>A<br>Seating Plane<br>**----- End of picture text -----**<br> |**Dim**|**Min**|**Max**| |---|---|---| |**A**||1.00| |**A1**|0.010|0.100| |**A2**|0.840|0.900| |**D**|2.800|3.000| |**E**<br>**E1**||| |**E1**<br>**b**|1.500<br>0.300|1.700<br>0.450| |**b**|0.300|0.450| |**c**|0.120|0.200| |**e**||| |**e**<br>**e1**||| |**L**|0.30|0.50| |**L2**||| |**θ**|0°|8°| |**θ1**|4°|12°| 7 of 9 **www.diodes.com** DMN61D8L/LVT Document number: DS37630 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMN61D8L/LVT** ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **SOT23** **==> picture [137 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> Y<br>Y1 ot C<br>a @<br>LJ X LL X1<br>**----- End of picture text -----**<br> |**Dimensions**|**Value(in mm)**| |---|---| |**C**|2.0| |**X**|0.8| |**X1**|1.35| |**Y**|0.9| |**Y1**|2.9| ## **TSOT26** C Y1 ~~‘O00~~ Y X ~~000:~~ |**Dimensions Value**|**Dimensions Value(in mm)**| |---|---| |**C**|0.950| |**X**|0.700| |**Y**|1.000| |**Y1**|3.199| 8 of 9 **www.diodes.com** DMN61D8L/LVT Document number: DS37630 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMN61D8L/LVT** **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMN61D8L/LVT Document number: DS37630 Rev. 4 - 2 June 2018 © Diodes Incorporated
Updated at June 9, 2026
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