Image not available
Illustrative purposes only
DMN6066SSD-13
Dual MOSFET, N Channel, 60 V, 60 V, 3.3 A, 3.3 A, 0.066 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.8W
- Power Dissipation P Channel: 1.8W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 3.3A
- Continuous Drain Current Id P Channel: 3.3A
- Drain Source On State Resistance N Channel: 0.066ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.33 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMN6066SSD**
**60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = +25°C**|
|60V|66mΩ @ VGS= 10V|4.4A|
||97mΩ @ VGS = 4.5V|3.6A|
## **Features and Benefits**
- Low on-resistance
- Fast switching speed
- 100% Unclamped Inductive Switch (UIS) test in production
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Description and Applications**
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
## **Mechanical Data**
- Case: SO-8
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Connections: See Diagram Below
- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.074 grams (Approximate)
**==> picture [37 x 110] intentionally omitted <==**
**----- Start of picture text -----**<br>
SO-8<br>.<br>im<br>Top View<br>**----- End of picture text -----**<br>
Top View
**==> picture [66 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
Equivalent Circuit<br>**----- End of picture text -----**<br>
## **Ordering Information** (Notes 4 & 5)
|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|DMN6066SSD-13|Commercial|SO-8|2,500/Tape & Reel|
|DMN6066SSDQ-13|Automotive|SO-8|2,500/Tape &Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www. diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
SO-8
**==> picture [49 x 21] intentionally omitted <==**
**----- Start of picture text -----**<br>
N6066SD<br>YY WW<br>**----- End of picture text -----**<br>
> = Manufacturer’s Marking ; N6066SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)
1 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
**DMN6066SSD**
**Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage<br>~~eee~~||(Note 6)<br>~~eee~~|VGS<br>~~eee~~|20<br>~~eee~~|V<br>~~eee~~|
|Single Pulsed Avalanche Energy<br>~~eee~~||(Note 13)<br>~~eee~~|EAS<br>~~eee~~|37.5<br>~~eee~~|mJ<br>~~eee~~|
|SinglePulsedAvalanche Current<br>~~ES~~||(Note13)<br>~~ES~~|IAS|5.0<br>~~eee~~|A<br>~~eee~~|
|Continuous Drain Current<br>~~ES~~|VGS= 10V<br>~~ES~~|(Note 8)<br>~~ES~~|ID|4.4<br>~~eee~~|A<br>~~eee~~|
|||TA= +70°C(Note 8)<br>~~ES~~||3.5<br>~~eee~~||
|||(Note 7)<br>~~ES~~||3.3<br>~~eee~~||
|Pulsed Drain Current<br>~~ES~~<br>~~RD~~|VGS = 10V<br>~~ES~~<br>~~RD~~|(Note 9)<br>~~ES~~<br>~~QO~~|IDM<br>~~QO~~|17.0<br>~~eee~~<br>~~QO~~|A<br>~~eee~~|
|Continuous Source Current(Bodydiode)<br>~~ES~~<br>~~RD~~<br>~~ee~~<br>~~rrrrrrrrr— a~~||(Note 8)<br>~~ES~~<br>~~QO~~<br>~~a~~|IS<br>~~QO~~<br>~~ld~~|3.2<br>~~eee~~<br>~~QO~~<br>~~ld~~|A<br>~~eee~~<br>~~ld~~|
|Pulsed Source Current(Bodydiode)<br>~~RD~~<br>~~ee~~<br>~~rrrrrrrrr— a~~||(Note 9)<br>~~QO~~<br>~~a~~|ISM<br>~~QO~~<br>~~ld~~|17.0<br>~~QO~~<br>~~ld~~|A<br>~~ld~~|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Notes 7 & 10)|PD|1.25<br>10|W<br>mW/°C|
||(Notes 7 & 11)||1.8<br>14.3||
||(Notes 8 & 10)||2.14<br>17.2||
|Thermal Resistance, Junction to Ambient|(Notes 7 & 10)|RJA|100|°C/W|
||(Notes 7 & 11)||70||
||(Notes 8 & 10)||58||
|Thermal Resistance,Junction to Lead|(Notes 10 & 12)|RJL|55||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to 150|°C|
Notes: 6. AEC-Q101 VGS maximum is 16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t 10 sec.
9. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
10. For a dual device with one active die.
11. For a device with two active die running at equal power.
12. Thermal resistance from junction to solder-point (at the end of the drain lead).
13. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD = 50V, starting TJ = +25°C.
2 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
**DMN6066SSD** [
## **Thermal Characteristics**
**==> picture [447 x 357] intentionally omitted <==**
**----- Start of picture text -----**<br>
R Limited SSee RS A 2.0 a<br>10 DS(on) hE ae 1.8 Le | | | | | CT | | Tl TT<br>|TENTS [OSA] 1.6 a<br>1 1.4<br>Two active die<br>1.2<br>- ee DC i, SU eh | SSN Ee<br>100m rf 1s AP SSS H 1.0 p | | Ne TSN | |<br>pop————aae=== - as 100ms faaSSss a > ——: :7 0.8 PSSAARNReS<br>10m Single Pulse 10ms LiviSS 7,———— = 0.6 One active die pNG| NE NeeKY fT tt<br>T =25°C —o 1ms ————e © 0.4 pf |ANY<br>1m One active dieamb ==mma >===2.-———_— 100µs ==Oomel= 0.2 PNRaBee ee), RaSe<br>—— ee fF 0.0 A<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VDS Drain-Source Voltage (V) Temperature (°C)<br>Safe Operating Area Derating Curve<br>110<br>100 1]| T amb =25 ° C Mmatlio sll| 110m| tom |a Single Pulse HH<br>90 | One active die 1 9" 100 a," Tamb=25°C<br>80 One active die<br>70 Co CooCEM TT erAATgeE FEECOCCI Cc<br>60 D=0.5 2 a MA TT<br>50 2es <<a f || dl 10<br>40 HHA EE Hg EE<br>30 D=0.2 Single Pulse<br>SE ieneLYa ‘l nt TOSSett<br>20 D=0.05<br>ere Tit Jn<br>10 Ce oH 1 SUI TTUt<br>Laan Leet | | | D=0.1 I TTT EE<br>0 ee Co PEE EHH PEE EEE<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br> Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>
3 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
**DMN6066SSD**
**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|---|
|**Characteristic**<br>~~————————————~~|**Symbol**<br>~~————————————~~|**Min**<br>~~————————————~~|**Typ**<br>~~————————————~~|**Max**<br>~~————————————~~|**Unit**<br>~~————————————~~|**Test Condition**<br>~~————————————~~||
|**OFF CHARACTERISTICS**<br>~~————————————~~||||||||
|Drain-Source Breakdown Voltage<br>~~————————————~~|BVDSS<br>~~————————————~~|60<br>~~————————————~~|<br>~~————————————~~|<br>~~————————————~~|V<br>~~————————————~~|ID= 250µA,VGS= 0V<br>~~————————————~~||
|Zero Gate Voltage Drain Current<br>~~op~~|IDSS<br>~~op~~|<br>~~op~~|<br>~~op~~|0.5<br>~~op~~|µA<br>~~op~~|VDS= 60V,VGS= 0V<br>~~op~~||
|Gate-Source Leakage<br>~~op~~|IGSS<br>~~op~~|<br>~~op~~|<br>~~op~~|100<br>~~op~~|nA<br>~~op~~|VGS=20V,VDS= 0V<br>~~op~~||
|**ON CHARACTERISTICS**<br>~~GOCOO~~||||||||
|Gate Threshold Voltage<br>~~GO~~|VGS(th)<br>~~GO~~|1.0<br>~~GO~~<br>~~GO~~|<br>~~GO~~<br>~~GO~~|3.0<br>~~GO~~<br>~~COO~~|V<br>~~GO~~<br>~~COO~~|ID= 250µA,VDS= VGS<br>~~GO~~<br>~~COO~~||
|Static Drain-Source On-Resistance (Note 14)<br>~~ee~~|RDS (ON)<br>~~ee~~|<br>~~GO~~<br>~~ee~~|0.048<br>~~GO ~~<br>~~ee~~|0.066<br> ~~COO~~<br>~~ee~~|Ω<br>~~COO~~<br>~~ee~~|VGS= 10V,ID= 4.5A<br>~~COO~~<br>~~ee~~||
||||0.068<br>~~ee~~|0.097<br>~~ee~~||VGS= 4.5V,ID= 3.5A<br>~~ee~~||
|Forward Transconductance(Notes 14 & 15)<br>~~—————~~<br>~~oo~~|gfs<br>~~—————~~|<br>~~—————~~|19.2<br>~~—————~~|<br>~~—————~~|S<br>~~—————~~|VDS= 15V,ID= 6A<br>~~—————~~||
|Diode Forward Voltage(Note 14)<br>~~—————~~<br>~~oo~~|VSD<br>~~—————~~|<br>~~—————~~|0.89<br>~~—————~~|1.15<br>~~—————~~|V<br>~~—————~~|IS= 4.5A,VGS= 0V<br>~~—————~~||
|Reverse recoverytime(Note 15)<br>~~oo~~|trr||22.2||ns|IS= 1.9A, di/dt= 100A/µs||
|Reverse recoverycharge(Note 15)<br>~~oo~~|Qrr||16.9||nC|||
|**DYNAMIC CHARACTERISTICS(Note 15)**<br>~~oo~~||||||||
|Input Capacitance<br>~~oo~~<br>~~pO~~|Ciss||502||pF|VDS= 30V, VGS= 0V<br>f= 1MHz<br>~~eee~~||
|Output Capacitance|Coss||45.7||pF|||
|Reverse Transfer Capacitance<br>~~—~~|Crss||27.1<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|||
|Total Gate Charge(Note 16)<br>~~—~~|Qg||5.4<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~|VGS= 4.5V<br>~~eee~~|VDS= 30V<br>ID= 4.5A<br>~~e~~|
|Total Gate Charge(Note 16)<br>~~GO~~<br>~~—~~|Qg<br>~~GO~~|<br>~~GO~~|10.3<br>~~GO~~<br>~~ee~~|<br>~~GO~~<br>~~ee~~|nC<br>~~GO~~<br>~~ee~~|VGS= 10V<br>~~eee~~||
|Gate-Source Charge(Note 16)<br>~~—~~|Qgs||1.7<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~|||
|Gate-Drain Charge(Note 16)<br>~~—~~|Qgd||3.2<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~|||
|Turn-On DelayTime(Note 16)<br>~~—~~<br>~~——~~|tD(on)<br>~~——~~|<br>~~——~~|2.7<br>~~ee~~<br>~~——~~|<br>~~ee~~<br>~~——~~|ns<br>~~ee~~<br>~~——~~|VDD= 30V, VGS= 10V<br>ID= 1A, RG6.0Ω<br>~~eee~~<br>~~——~~||
|Turn-On Rise Time(Note 16)<br>~~—~~<br>~~——~~|tr<br>~~——~~|<br>~~——~~|2.4<br>~~ee~~<br>~~——~~|<br>~~ee~~<br>~~——~~|ns<br>~~ee~~<br>~~——~~|||
|Turn-Off DelayTime(Note 16)<br>~~——~~|tD(off)<br>~~——~~|<br>~~——~~|14.7<br>~~——~~|<br>~~——~~|ns<br>~~——~~|||
|Turn-Off Fall Time(Note 16)<br>~~——~~|tf<br>~~——~~|<br>~~——~~|5.4<br>~~——~~|<br>~~——~~|ns<br>~~——~~|||
15. For design aid only, not subject to production testing.
16. Switching characteristics are independent of operating junction temperatures.
4 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
**DMN6066SSD**
## **Typical Characteristics**
**==> picture [448 x 529] intentionally omitted <==**
**----- Start of picture text -----**<br>
T = 25°C 10V T = 150°C 10V<br>4.5V 4.5V<br>10 Fu proH Eee 10 pe=SS 4V<br>4V<br>3.5V<br>tier ttt 3.5V Soae<br>1 1<br>3V<br>I ——— Sa<br>a (<br>2.5V<br>0.1 11 3V 0.1 i<br>V<br>GS<br>V<br>GS 2V<br>0.01 P Eoere 0.01 SP e |<br>0.1 1 10 0.1 1 10<br>VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>10 VDSDS = 10V 10V a -e 2.0 TT V GS = 10V LJ<br>eSoffoff 1.8 P|| sd I D = 12A || [77] 4|<br>1 ny—_————_——— a 4 [[a]] [[A]] 1.61.4 aes7 R DS(on) |<br>T = 150°C<br>0.1 — ff ——— 1.2 pO<br>_ SS Sf {|FfFf a CePO ee ee<br>——— T = 25 ° C — 1.0 Se<br>V<br>0.01 0.8 | V = V GS(th)<br>J ff ne GS DS<br>—aa yAFFFF IAA 0.6 LsrT S~S™ I D = 250uA |~~<br>1E-3 ee | ee 0.4 Pd Pd<br>1 2 3 4 5 -50 0 50 100 150<br>VGS Gate-Source Voltage (V)GS Gate-Source Voltage (V) Gate-Source Voltage (V) Tj Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>100<br>3V V GS 10<br>EEeeeeee iat {|} |__| |__|<br>10 | 3.5V — a A<br>eeEeee ee ee eee ee T = 150°C<br>1<br>Eeee pn ffs<br>1 eee eee 4V ee ey Sey See T = 25°C<br>4.5V 0.1<br>0.1 SSaeiilieeeeeentsese TASSSS itiTTTT aSSS SSSSSSee<br>10V<br>0.01 a T = 25°C SthCiCi Cori CT 0.01 apa ffA a Vgs = 0V _<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>ID Drain Current (A)D Drain Current (A) Drain Current (A) VSD Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>)<br><br> Reverse Drain Current (A)<br> Drain-Source On-Resistance ( ISD<br>DS(on)<br>R<br> Drain Current (A) Drain Current (A)<br>ID ID<br>D<br>**----- End of picture text -----**<br>
**==> picture [219 x 339] intentionally omitted <==**
**----- Start of picture text -----**<br>
10<br>eSoffoff VDSDS = 10V 10V<br>1 [[a]] [[A]]<br>ny—_————_——— a 4<br>T = 150°C<br>0.1 — ff ———<br>_ SS Sf {|FfFf a<br>——— T = 25 ° C —<br>0.01<br>J ff<br>—aa yAFFFF IAA<br>1E-3 ee | ee<br>1 2 3 4 5<br>VGS Gate-Source Voltage (V)GS Gate-Source Voltage (V) Gate-Source Voltage (V)<br>Typical Transfer Characteristics<br>100<br>3V V<br>GS<br>EEeeeeee iat<br>10 | 3.5V<br>eeEeee ee eee ee<br>1 4V<br>eee eee<br>4.5V<br>0.1 SSaeiilieeeeeentsese TASSSS itiTTTT<br>10V<br>0.01 a T = 25°C SthCiCi Cori CT<br>0.01 0.1 1 10<br>ID Drain Current (A)D Drain Current (A) Drain Current (A)<br>On-Resistance v Drain Current<br>)<br><br> Drain-Source On-Resistance (<br>DS(on)<br>R<br> Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
5 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
**DMN6066SSD** [
**Typical Characteristics** (continued)
**==> picture [448 x 176] intentionally omitted <==**
**----- Start of picture text -----**<br>
10<br>V = 0V<br>600 GS<br>f = 1MHz 8<br>To<br>a ere PPP yT yy elyey<br>C<br>ISS 6<br>400 PEE TT Pf f t<br>p<br>C<br>a OSS tt ty<br>4<br>C<br>RSS<br>200 eeeMRanSaree ll FEEee<br>V = 30V<br>2 DS<br>Pte TIE ET 7 I = 4.5A<br>D<br>a eee 7<br>0 aa. 0 (Amma<br>0.1 1 10 0 2 4 6 8 10<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C Capacitance (pF) Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
6 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
**DMN6066SSD** [
**Test Circuits**
7 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
**DMN6066SSD**
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
**==> picture [378 x 167] intentionally omitted <==**
**----- Start of picture text -----**<br>
HAA<br>SO-8<br>Dim Min Max<br>A - 1.75<br>E1 E<br>Gauge Plane A1 0.10 0.20<br>A1 Seating Plane A2 1.30 1.50<br>L<br>A cs A3 0.15 0.25<br>Detail ‘A’ b 0.3 0.5<br>D 4.85 4.95<br>sa<br>h 7°~9° E 5.90 6.10<br>45° E1 3.85 3.95<br>Detail ‘A’ e 1.27 Typ<br>A2 A A3 h - 0.35<br>L 0.62 0.82<br>e b Θ 0 8<br>Sea) D Se All Dimensions in mm<br>0.254<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
**==> picture [98 x 118] intentionally omitted <==**
**----- Start of picture text -----**<br>
X<br>C1<br>. . " ]<br>C2<br>Y<br>Saen<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value (in mm)**|
|---|---|
|**X**|0.60|
|**Y**|1.55|
|**C1**|5.4|
|**C2**|1.27|
8 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
**DMN6066SSD**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated
**www.diodes.com**
9 of 9 **www.diodes.com**
DMN6066SSD Document Number DS32109 Rev. 4 - 2
April 2015 © Diodes Incorporated
Updated at June 9, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →