DMN601VKQ-7

**DMN601VKQ** 

## **DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Features** 

## **Mechanical Data** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Ultra-Small Surface Mount Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Case: SOT563 

   - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminal Connections: See Diagram 

   - Terminals: Finish - Matte Tin Annealed over Copper Leadframe.  Solderable per MIL-STD-202, Method 208 **e3** 

   - Weight: 0.006 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

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ESD Protected up to 2kV rr<br>**----- End of picture text -----**<br>


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SOT563  D2 G1 S1<br>S2 G2 D1<br>et<br>TOP VIEW TOP VIEW<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN601VKQ-7|SOT563|3,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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SOT563<br>D2 G1 S1<br>K7K = Marking Code<br>YM = Date Code Marking<br>K7K  YM Y = Year (ex: D = 2016)<br>M = Month (ex: 9 = September)<br>S2 G2 D1<br>Date Code Key<br>Month 2005 … 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024<br>_ttt Code ot S  …  C  D  E  F  G  H  I  J  K  L<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>ee<br>**----- End of picture text -----**<br>


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DMN601VKQ Document number: DS38576  Rev. 1 - 2 

January 2016 © Diodes Incorporated 

**DMN601VKQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Drain Current (Note 6)|Continuous<br>Pulsed (Note7)|ID|305<br>800|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|PD|250|mW|
|Thermal Resistance,Junction to Ambient|RJA|500|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-65 to +150|°C|



**Electrical Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~——~~|**Symbol**<br>~~——~~|**Min**<br>~~——~~|**Typ**<br>~~——~~|**Max**<br>~~——~~|**Unit**<br>~~——~~|**Test Condition**<br>~~——~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~——~~|||||||
|Drain-SourceBreakdown Voltage<br>~~——~~|BVDSS<br>~~——~~|60<br>~~——~~|<br>~~——~~|<br>~~——~~|V<br>~~——~~|VGS=0V,ID= 10µA<br>~~——~~|
|Zero Gate Voltage Drain Current<br>~~——~~|IDSS<br>~~——~~|<br>~~——~~|<br>~~——~~|250<br>~~——~~|nA<br>~~——~~|VDS= 50V,VGS= 0V<br>~~——~~|
|Gate-Source Leakage<br>~~——~~<br>~~a~~|IGSS<br>~~——~~<br>~~a~~|<br>~~——~~<br>~~a~~|<br>~~——~~<br>~~a~~|500<br>~~——~~<br>~~a~~|nA<br>~~——~~<br>~~a~~|VGS=10V,VDS=0V<br>~~——~~<br>~~a~~|
|||<br>~~a~~|<br>~~a~~|100<br>~~a~~||VGS=5V,VDS=0V<br>~~a~~|
|**ON CHARACTERISTICS (Note 8)**<br>~~DG~~<br>~~QO~~|||||||
|Gate Threshold Voltage<br>~~GO~~|VGS(th)<br>~~GO~~|1.0<br>~~GO~~|1.6<br>~~GO~~<br>~~DG~~|2.5<br>~~GO~~<br>~~DG~~|V<br>~~GO~~<br>~~QO~~|VDS= VGS,ID= 250µA<br>~~GO~~|
|Static Drain-Source On-Resistance<br>~~po~~|RDS(ON)<br>~~po~~|<br><br>~~po~~|<br><br>~~DG~~<br>~~po~~|2.0<br>3.0<br>~~DG~~<br>~~po~~|Ω<br>~~QO~~<br>~~po~~|VGS= 10V, ID= 0.5A<br>VGS= 4.5V,ID= 200mA<br>~~po~~|
|ForwardTransfer Admittance<br>~~po~~||Yfs|<br>~~po~~|<br>~~po~~|284<br>~~po~~<br>~~DG~~|<br>~~po~~<br>~~DG~~|ms<br>~~po~~<br>~~QO~~|VDS=10V,ID=0.2A<br>~~po~~|
|Diode Forward Voltage(Note 8)<br>~~po~~<br>~~QO~~|VSD<br>~~po~~<br>~~QO~~|0.5<br>~~po~~<br>~~QO~~|<br>~~po~~<br>~~QO~~<br>~~DG~~|1.4<br>~~po~~<br>~~QO~~<br>~~DG~~|V<br>~~po~~<br>~~QO~~<br>~~QO~~|VGS=0V,IS= 115mA<br>~~po~~<br>~~QO~~|
|**DYNAMIC CHARACTERISTICS**<br>~~DG~~<br>~~QO~~<br>~~a~~<br>~~ee~~|||||||
|Input Capacitance<br>~~——————~~|Ciss<br>~~——————~~<br>~~a~~|<br>~~——————~~|<br>~~——————~~|50<br>~~——————~~<br>~~ee~~|pF<br>~~——————~~<br>~~ee~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~——————~~<br>~~ee~~|
|Output Capacitance<br>~~——————~~|Coss<br>~~——————~~<br>~~a~~|<br>~~——————~~|<br>~~——————~~|25<br>~~——————~~<br>~~ee~~|pF<br>~~——————~~<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~——————~~|Crss<br>~~——————~~<br>~~a~~|<br>~~——————~~|<br>~~——————~~|5.0<br>~~——————~~<br>~~ee~~|pF<br>~~——————~~<br>~~ee~~||



8. Short duration pulse test used to minimize self-heating effect. 

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DMN601VKQ Document number: DS38576  Rev. 1 - 2 

January 2016 © Diodes Incorporated 

**DMN601VKQ** 

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VGS = 10V<br>8V = 8V re a<br>6V<br>1 . 2 5V wee> — — ——Pulsed | | UA TT<br>4V 6V<br>3V<br>1.0 —_— 5V a one<br>0.8 2<br>fff i —= £ ) fo<br>0.6 ffYY 4V i a fe<br> / o — —————<br>0.4 WerY/ ABP<br>0.2 ffPoo ff | |<br>0 Bina 3V 0.01 Wee/|<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>2 10 a a Oe Os Oe OO OO OO<br>VDS= 10V  a OO OO OG Py Tr<br>> ID = 1mA es | Ves = 10V TT TTT<br>Ler 68s ST<br>Pulsed<br>a LTT<br>1.5<br>‘ = a<br>CTI sere core TT<br>a<br>:<br>1<br>x= 1 AH)<br>Yn Po<br>ig 5eeee eae EETSERRE<br>TOIT 82 88°C TH<br>0.5<br>5 pbaFHIteetee Iteetee Ttas-aseAA Ht<br>><br>0 0.1<br>-50 -25TCHFig. 3  Gate Threshold Voltage, CHANNEL TEMPERATURE 0 25 50 75 100 ( o 癈 C125 ) 150 0 . 001 Fig. 4 Static Drain-Source On-ResistanceID [[,]]  DRAIN CURRENT (A) 0 . 01 0 . 1 4<br>vs. Channel Temperature  vs. Drain Current<br>10 ae 7<br>Cett Ft Vos<br>PTee Pulsed= 5 TTnal§9= 67 PTW | | ddd 1,PulsedAPulsedAA = 25°C<br>PIE tas | tenes TUTTI [fee | |<br>rene [Ht] 5 -<br>pemanan (mn |<br>reFT1-80aTTeee || It[TT] 3 PTW | |] EE<br>—H sil mewTTTT TT] TL |<br>0<br>50 04 0 . 01 0 . 1 1 0 2 4 6 8 10 12 14 16 18<br>ID, DRAIN CURRENT (A) VGS, GATE SOURCE VOLTAGE (V)GS, GATE SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V)<br>Fig. 5  Static Drain-Source On-Resistance  Fig. 6  Static Drain-Source On-Resistance<br>vs. Drain Current vs. Gate-Source Voltage<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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10 a a Oe Os Oe OO OO<br>a OO OO OG Py<br>es | Ves = 10V TT<br>Ler 68s<br>a<br>=<br>CTI sere core<br>1 AH)<br>Po<br>5eeee eae EETSERRE<br>TOIT 82 88°C<br>FHpbaFHIteetee Ttas-aseAA<br>0.1<br>0 . 001 0 . 01 0 . 1<br>IDD [[,]]  DRAIN CURRENT (A)<br>Fig. 4 Static Drain-Source On-ResistanceID<br> vs. Drain Current<br>67 PTW | | ddd 1,PulsedAPulsedAA =<br>[fee | |<br>5 -<br>3<br>PTW | |]<br>mewTTTT TT] TL<br>0 0 2 4 6 8 10 12 14 16 18<br>VGS, GATE SOURCE VOLTAGE (V)GS, GATE SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V)<br>Fig. 6  Static Drain-Source On-Resistance<br>vs. Gate-Source Voltage<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMN601VKQ Document number: DS38576  Rev. 1 - 2 

January 2016 

**www.diodes.com** 

© Diodes Incorporated 

**DMN601VKQ** ——— 

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DIODES<br>25 SSE<br>VesPulsed= 10V lp= 300mA. V PuGSlsed  = 0V sea 4D/A / A //707)4! 7 A )||<br>y<br>2 J 7 2)<br>TA  = 125°C<br>TA  = 150°C<br>o tMI<br>1.5 /A SEn89/)7//annnneea ey AF Ay Pay 7 A) A A TA  = 85°C a<br>ee<br>| , Saas as 7<br>| | | | Ay} Ayyy tt TA = 25°C [||<br>A aie:Eeriea| |<br>0 . 0 1 fyi| TA = 0°C<br>ee eee<br>FAH TA = -25 ° C =a<br>05 a rsPAE ee A) ee|fiAfgA<br>| | VALP Lee<br>TA   = -55 ° C<br>0 oot SAT |<br>-75 - 50 - 25 0 25 50 75 100 125 150 0 MEA THA0.5 1 1 . 5<br>TCH, CHANNEL TEMPERATURE (°C) Vp: SOURCE -D RAIN VOLTAGE (V)<br>Fig. 7  Static Drain-Source On-State Resistance  Fig . 8 Reverse Drain Current<br>vs. Channel Temperature vs. Source -D rain Voltage<br>4 ae 1 a i S-<br>VGS = 10V<br>a V GS  = 10V re ee ee ee Ae Pulsed a ee<br>| awee|A T A = 25 癈 o C  tLee T A  = 25°C Aeee<br>Pulsed<br>TA = 150 C °<br>EVaEEEy,a a eS ie TA = -55 C° i 7/7eelll<br>At =eeee eee<br>[op | | | Meet<br>A A | Lae tt<br>ae eee eee PPA TA = 85°C<br>wECCLEVEEEE dACT<br>a ee ee ee | V GS  = 0V re es | PotTy<br>|===re ee ee ==re eea a ee ate ee ease Tt<br>HH A+ HH en el<br>o of | | | F | T | tl o o o] | LIMELUTE<br>0 0 . 5 1 0.001 0.01 0 . 1 | LAI 1<br>Vgp: SOURCE -D RAIN VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Fig . 9 Reverse Drain Current Fig.10  Forward Transfer Admittance<br>vs. Source -D rain Voltage vs. Drain Current<br>(s)<br>, REVERSE DRAIN CURRENT (A)<br>IDR<br>|, FORWARD TRANSFER  ADMITTANCE (S)<br>|Y<br>fs<br>, REVERSE DRAIN CURRENT (A)<br>IDR<br>DS(ON)<br>)<br>, STATIC DRAIN-SOURCE<br>ON-STATE RESISTANCE (<br>R<br>**----- End of picture text -----**<br>


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DMN601VKQ Document number: DS38576  Rev. 1 - 2 

January 2016 © Diodes Incorporated 

**DMN601VKQ** 

## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

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SOT563<br>A<br>4<br>iT ]<br>B C<br>D<br>G<br>K M<br>to Le<br>H<br>— L<br>| tet<br>**----- End of picture text -----**<br>


|**SOT563**|**SOT563**|**SOT563**|**SOT563**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**|0.15|0.30|**yp**<br>0.20|
|**B**|1.10|1.25|1.20|
|**C**|1.55|1.70|1.60|
|**D**|-|-|0.50|
|**G**|0.90|1.10|1.00|
|**H**|1.50|1.70|1.60|
|**K**|0.55|0.60|0.60|
|**L**|0.10|0.30|0.20|
|**M**|0.10|0.18|0.11|
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

**SOT563** 

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C2 C2<br>Kae<br>><br>f G ad C1<br>Z<br>Y<br>Pooot<br>X<br>Ie ><br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**Z**|2.2|
|**G**|1.2|
|**X**|0.375|
|**Y**|0.5|
|**C1**|1.7|
|**C2**|0.5|



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DMN601VKQ Document number: DS38576  Rev. 1 - 2 

January 2016 © Diodes Incorporated 

**DMN601VKQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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DMN601VKQ Document number: DS38576  Rev. 1 - 2 

January 2016 © Diodes Incorporated