DMN601DWKQ-7

**DMN601DWKQ** ~~>~~ 

**DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Product Summary** 

|**BVDSS**<br>60V|**RDS(ON) Max**<br>3Ω@VGS= 5V|**ID Max**<br>**TA = +25°C**<br>0.3A|
|---|---|---|



## **Features** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

## **Description and Applications** 

- Ultra-Small Surface Mount Package 

- **ESD Protected** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **Qualified to AEC-Q101 Standards for High Reliability** 

   - **PPAP Capable (Note 4)** 

- Motor Control 

- Power Management Functions 

## **Mechanical Data** 

- Case: SOT363 

- Case Material:  Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

 Weight: 0.006 grams (Approximate) 

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D1 D2 D2 G1 S1<br>SOT363<br>G1 G2<br>hw OS Gate Protection Diode S1 Gate Protection Diode S2 L S2 G2 D1<br>ESD Protected up to 2kVESD Protected up to 2kV<br>Top View  Equivalent Circuit  Top View<br>g Information Information (Note 5)<br>Part Number Case Packaging<br>DMN601DWKQ-7  SOT363 3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 5) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/product-compliance-definitions/. 

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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SOT363<br>D2 G1 S1 K7K = Product Type Marking Code<br>K7K  YM YM = Date Code Marking<br>Y or Y = Year (ex: E = 2017)<br>M = Month (ex: 9 = September)<br>S2 G2 D1<br>Date Code Key<br>Year 2005 2006 --- 2015 2016 2017 2018 2019 2020 2021 2022  2023  2024<br>Code S T  ---  C D  E  F  G H  I  J K  L<br>ee Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>—————————— Code 1  2  3 4  5 6 7  8 9 O N  D<br>DMN601DWKQ 1 of 7  December 2017<br>Document number: DS39982   Rev. 2 - 2 www.diodes.com   © Diodes Incorporated<br>K7K  YM<br>**----- End of picture text -----**<br>


December 2017 © Diodes Incorporated 

**DMN601DWKQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|20|V|
|Drain Current (Note 6)|Continuous<br>Pulsed(Note 7)|ID|305<br>800|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|PD|200|mW|
|Thermal Resistance,Junction to Ambient|RθJA|625|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-65 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|~~eGGO~~|||||||
|**Characteristic**<br>~~eG~~|**Symbol**<br>~~eG~~|**mbol**<br>**Min**<br>~~eG~~<br>~~eG~~|**Typ**<br>~~eG~~<br>~~eG~~|**Max**<br>~~eG~~<br>~~GO~~|**Unit**<br>~~eG~~<br>~~GO~~|**Test Condition**<br>~~eG~~|
|**OFF CHARACTERISTICS**(Note 8)<br>~~eG GO~~<br>~~re~~|||||||
|Drain-Source Breakdown Voltage<br>~~re~~|BVDSS<br>~~re~~|60<br>~~re~~|<br>~~re~~|<br>~~re~~|V<br>~~re~~|VGS= 0V, ID= 10µA<br>~~re~~|
|Zero Gate Voltage Drain Current<br>~~SE~~|IDSS<br>~~SE~~|<br>~~SE~~|<br>~~SE~~|1<br>~~SE~~|µA<br>~~SE~~|VDS= 60V, VGS= 0V<br>~~SE~~|
|Gate-Source Leakage<br>~~SE~~|IGSS<br>~~SE~~|<br>~~SE~~|<br>~~SE~~|10<br>~~SE~~|µA<br>~~SE~~|VGS=20V, VDS= 0V<br>~~SE~~|
|**ON CHARACTERISTICS**(Note 8)<br>~~SE~~<br>~~a~~|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)<br>~~a~~|1.0<br>~~a~~|1.6<br>~~a~~|2.5<br>~~a~~|V<br>~~a~~|VDS= 10V, ID= 1mA<br>~~a~~|
|Static Drain-Source On-Resistance<br>~~a~~<br>~~—~~|RDS(ON)<br>~~a~~<br>~~—~~|<br>~~a~~<br>~~—~~|<br><br>~~a~~<br>~~—~~|2.0<br>3.0<br>~~a~~<br>~~—~~|Ω<br>~~a~~<br>~~—~~|VGS= 10V, ID= 0.5A<br>VGS= 5V, ID= 0.05A<br>~~a~~<br>~~—~~|
|Forward Transfer Admittance<br>~~—~~||Yfs|<br>~~—~~|80<br>~~—~~|<br>~~—~~|<br>~~—~~|ms<br>~~—~~|VDS=10V, ID= 0.2A<br>~~—~~|
|Diode Forward Voltage(Note 9)<br>~~—~~<br>~~GG~~|VSD<br>~~—~~<br>~~GG~~|0.5<br>~~—~~<br>~~GG~~|<br>~~—~~<br>~~GG~~|1.4<br>~~—~~<br>~~GG~~|V<br>~~—~~<br>~~GG~~|VGS= 0V, IS= 115mA<br>~~—~~<br>~~GG~~|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~GG~~|||||||
|Input Capacitance<br>~~CO~~|Ciss<br>~~CO~~|<br>~~CO~~|30<br>~~CO~~|50<br>~~CO~~|pF<br>~~CO~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance<br>~~CO~~<br>~~i~~|Coss<br>~~CO~~|<br>~~CO~~|4.2<br>~~CO~~|25<br>~~CO~~|pF<br>~~CO~~||
|Reverse Transfer Capacitance<br>~~i~~|Crss||2.9|5.0|pF||
|Gate Resistance<br>~~i~~|Rg|—|133|—|Ω|f = 1MHz,VGS= 0V,VDS= 0V|
|Total Gate Charge<br>~~GC~~<br>~~ee~~|Qg<br>~~GC~~<br>~~ee~~|—<br>~~GC~~<br>~~ee~~|304<br>~~GC~~<br>~~ee~~|—<br>~~GC~~<br>~~ee~~|pC<br>~~GC~~<br>~~ee~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~<br>~~eeeeeee~~|
|Gate-Source Charge<br>~~GC~~<br>~~ee~~<br>~~ee~~|Qgs<br>~~GC~~<br>~~ee~~<br>~~eeee~~|—<br>~~GC~~<br>~~ee~~<br>~~eeee~~|203<br>~~GC~~<br>~~ee~~<br>~~eeee~~|—<br>~~GC~~<br>~~ee~~<br>~~eeee~~|pC<br>~~GC~~<br>~~ee~~<br>~~eeee~~||
|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|Qgd<br>~~ee~~<br>~~eeee~~|—<br>~~ee~~<br>~~eeee~~|84<br>~~ee~~<br>~~eeee~~|—<br>~~ee~~<br>~~eeee~~|pC<br>~~ee~~<br>~~eeee~~||
|Turn-On DelayTime<br>~~ee~~<br>~~ee~~|tD(ON)<br>~~ee~~<br>~~eeee~~|—<br>~~ee~~<br>~~eeee~~|3.9<br>~~ee~~<br>~~eeee~~|—<br>~~ee~~<br>~~eeee~~|ns<br>~~ee~~<br>~~eeee~~|VDD= 30V, VGS= 10V,<br>RG= 25Ω, ID= 200mA<br>~~ee~~<br>~~eeeeeee~~|
|Turn-On Rise Time<br>~~ee~~<br>~~ee~~|tR<br>~~ee~~<br>~~eeee~~|—<br>~~ee~~<br>~~eeee~~|3.4<br>~~ee~~<br>~~eeee~~|—<br>~~ee~~<br>~~eeee~~|ns<br>~~ee~~<br>~~eeee~~||
|Turn-Off DelayTime<br>~~ee~~|tD(OFF)<br>~~eeee~~|—<br>~~eeee~~|15.7<br>~~eeee~~|—<br>~~eeee~~|ns<br>~~eeee~~||
|Turn-Off Fall Time<br>~~ee~~|tF<br>~~eeee~~|—<br>~~eeee~~|9.9<br>~~eeee~~|—<br>~~eeee~~|ns<br>~~eeee~~||



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1.4 1.00<br>VGS = 10V<br>8V 10V 8V V DS = 10V<br>1.2 6V Pulsed<br>5V<br>4V 6V<br>3V<br>1.0 5V<br>T A  = 125°C<br>0.8<br>fof 0.10<br>0.6 4V TA = 75°C<br>0.4<br>An pp T A  = 25°C<br>0.2<br>fi 3V oe ae TA = -25°C<br>0 Za 0.01 Mh<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1  Typical Output Characteristics Figure 2  Typical Transfer Characteristics<br>2 10<br>VDS= 10V  VGS = 10V<br>ID = 1mA Pulsed<br>Pulsed<br>1.5 Se TA = 125°C at TA = 85°C<br>TA = 150°C<br>1 1<br>T A  = -55°C<br>0.5 a T A  = 25°C T A  = 0°C T A  = -25°C<br>Cte to<br>0 0.1<br>-50 -25 0 25 50 75 100 125 150 0.001 LEVI 0.01 LETTIIE 0.1 LIN 1<br>TCH, CHANNEL TEMPERATURE (( [o] 癈 C)) ID [,]  DRAIN CURRENT (A)<br>Figure 3  Gate Threshold Voltage vs. Channel Temperature Figure 4  Static Drain-Source On-Resistance vs. Drain Current<br>10 7<br>V GS  = 5V<br>Pulsed TA = 2525 癈 [o] C<br>6 Pulsed<br>TA = 125°C  TA = 8585 癈 [o] C<br>ID = 300mA<br>T A  = 150°C 5<br>ef 2oe<br>4<br>1<br>3<br>Io TA = 25°C T UE A  = 0°C T A  = -25°C 2<br>ID = 150mA<br>FHC 1 |<br>0.1 0<br>LAPT ETE TA TEEPE NEE TELE<br>0.001 0.01 0.1 1 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN CURRENT (A) VGS, GATE SOURCE VOLTAGE (V)<br>Figure 5  Static Drain-Source On-Resistance vs. Drain Current Figure 6  Static Drain-Source On-Resistance vs. Gate-Source Voltage<br>DRAIN CURRENT (A)<br>,<br>ID<br>)<br>, STATIC DRAIN SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th),<br>DS(on)<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DS(on)<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>D<br>, DRAIN CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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2.5 1<br>VGS = 10V VGS = 0V<br>Pulsed ID = 300mA Pulsed<br>2 CY ff| | | fs Uff | |<br>TA  = 125°C<br>TA  =  150 癈 oC<br>1.5 ID = 150mA 0.1 fT fe TA = 85°C<br>T A  = 25°C<br>wa ESSA<br>a<br>1<br>TA = 0°C<br>0.01<br>A<br>TA = -25 ° C<br>0.5 a — PRRgq oo<br>TA = -55 ° C<br>0 CE) 0.001 HHSTFETi Peee<br>-75 -50 -25 0 25 50 75 100 125 150 0 0.5 1 1.5<br>TCH, CHANNEL TEMPERATURE (°C) VSD,  [SOURCE-DRAIN VOLTAGE (V)]<br>Figure 7  Static Drain-Source On-State Resistance  Figure 8  Reverse Drain Current vs. Source-Drain Voltage<br>vs. Channel Temperature<br>1 ee ee ee a ae 1<br>V GS  = 10V VPulsedGS = 10V<br>ey TA= 2525 癈 [o] C H T A  = 25°C e<br>Pulsed<br>0.1 TA = 150 ° C<br>Of TA = -55°C Heett tt<br>TA = 85°C<br>0.01 (ame eee ciliaLEE<br>V GS  = 0V<br>1]aee ee re ee aee Oe<br>0.001<br>0 Pi ETF 0.5 ET et 1 o oo 0.001 LL TTI 0.01 LETTE 0.1 FLL 1<br>VSD,  [SOURCE-DRAIN VOLTAGE (V)] ID, DRAIN CURRENT (A)<br>Figure 9  Reverse Drain Current vs. Source-Drain Voltage Figure 10  Forward Transfer Admittance vs. Drain Current<br>50 10<br>f=1MHz<br>45 eee eee<br>40 ) | | | | ff 8<br>35<br>Af ft | C iss ft VDS = 10V<br>30 ee 6 ID = 250mA<br>25 Pot ee ee<br>|<br>20 po; |ft 4<br>15 a<br>10 2<br>a Coss ee<br>5 (ee<br>C rss<br>0 i 0<br>0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1<br>VDS , DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Typical Junction Capacitance Figure 12 Gate Charge<br>, REVERSE DRAIN CURRENT (A)<br>IDR<br>)<br>, STATIC DRAIN SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>, REVERSE DRAIN CURRENT (A)<br>IDR<br>|, FORWARD TRANSFER  ADMITTANCE (S)<br>fs<br>|Y<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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Document number: DS39982   Rev. 2 - 2 

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10<br>RDS(ON) aaROee<br>Limited<br>Se eiiemecttiieesiiiOO<br>PW = 100µs<br>1 a e a e neal<br>rye NN PW = 1ms Ptr<br>poFS SERREey aRSENSNTN eellPt TT<br>po NN Nt<br>p—f tA NENTRSE<br>ERRORS DC<br>0.1 ET PW = 10s ORS LNONY<br>feeapoaofaoTa TP iit PW = 1s TO|  ONSRN| SNF TON [NOON] TNTEE TT<br>PW = 100ms<br>oe SSE EH<br>0.01 T J (m ax )  = 150°C |_|et P W = 10ms PNNel<br>TA = 25°C<br>V GS  = 10V ——[[a [ONT][eee] NESN eee<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.001<br>0.1 1 10 100<br>VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 13 SOA, Safe Operation Area<br>1<br>C D=0.7 eN wd<br>—— reer<br>D=0.5<br>ETH ETTT ETOP NT eee TTT<br>EL =a A<br>a D=0.3 ===oe HI TAPLINTH<br>0.1 a igLf _ | D=0.9<br>D=0.1 Cy ereee [tre] [EEE]<br>FE a S/RE [Egg] ap f |<br>P /M<br>D=0.05<br>F E CTE TTTE<br>A 2A<br>E D=0.02 e<br>0.01 | Vf |<br>tl D=0.01 MEA LA LITE IE NTE TL<br>Sepot eee aeaeee eA2A com eet ee eee OG e e eeeOOee ee8ee et<br>fr UA PT ft TTT<br>D=0.005 RθJA(t) = r(t) * RθJA<br>cc 7a TTT RθJA = 414 ℃ /W TEmani<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 14 Transient Thermal Resistance<br>, DRAIN CURRENT (A)<br>ID<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN601DWKQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

||||||||||||||||||**SOT363**|**SOT363**||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|E||||F|||||||b||||E1||||||||**SOT363**<br>**Dim**<br>**Min**<br>**Max **<br>**Typ**<br>**A1**<br>0.00<br>0.10<br>0.05<br>**A2**<br>0.90<br>1.00<br>1.00<br>**b**<br>0.10<br>0.30<br>0.25<br>**c**<br>0.10 0.22<br>0.11<br>**D**<br>1.802.20<br>2.15<br>**E**<br>2.00<br>2.20<br>2.10<br>**E1**<br>1.15<br>1.35<br>1.30|
|||||||||D|||||||||||||||**e**<br>0.650BSC|
|A2||A1||||||||e||||c|L<br>~~A,~~|||||||a|**F**<br>0.40<br>0.45<br>0.425<br>**L**<br>0.25<br>0.40<br>0.30<br>**a**<br>0°<br>8°<br>--<br>**All Dimensions in mm**|



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>C<br>Y1 o oo, G<br>Y<br>X<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**G**|1.300|
|**X**|0.420|
|**Y**<br>**Y1**|0.600|
|**Y1**|2.500|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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