DMN53D0LDW-7

**DMN53D0LDW** 

**DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

| 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|50V|1.6Ω@VGS= 10V|360mA|
||2.5Ω@VGS= 4.5V|250mA|



## **Features** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Small Surface Mount Package 

## **Description** 

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- DC-DC Converters 

- Power management functions 

- Battery Operated Systems and Solid-State Relays 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc 

- ESD protected to 2KV 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT363 

- Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

• Weight: 0.006 grams (approximate) 

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SOT363<br>D2 G1 S1<br>S2 G2 D1<br>ESD PROTECTED<br>~ © ae<br>Top View<br>Top View  Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN53D0LDW-7|SOT363|3000/Tape & Reel|
|DMN53D0LDW-13|SOT363|10000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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MM5 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: B = 2014)<br>WA SW M = Month (ex: 9 = September)<br>Py ut<br>Date Code Key<br>Year 2014 2015 2016 2017 2018 2019 2020<br>ee Code B  C  D  E  F  G  H<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>SS Code 1  2  3  4  5  6  7  8  9  O  N  D<br>DMN53D0LDW 1 of 5  June 2014<br>www.diodes.com   © Diodes Incorporated<br>**----- End of picture text -----**<br>


DMN53D0LDW Document number: DS37072 Rev. 2 - 2 

June 2014 © Diodes Incorporated 

**DMN53D0LDW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain Source Voltage|VDSS|50|V|
|Gate-Source Voltage|VGSS|±20|V|
|Drain Current (Note 5)|ID|360|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|PD|310|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|411|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6)**<br>~~——_———————~~|||||||
|Drain-Source Breakdown Voltage<br>~~——_———————~~<br>~~aNN~~|BVDSS<br>~~——_———————~~|50<br>~~——_———————~~|⎯<br>~~——_———————~~|⎯<br>~~——_———————~~|V<br>~~——_———————~~|VGS= 0V, ID= 250µA<br>~~——_———————~~|
|Zero Gate Voltage Drain Current<br>~~aNN~~|IDSS|⎯|⎯|1.0|µA|VDS= 50V, VGS= 0V|
|Gate-Body Leakage<br>~~aNN~~|IGSS|⎯|⎯|10|µA|VGS= ±20V, VDS= 0V|
|**ON CHARACTERISTICS(Note 6)**<br>~~NN~~<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~<br>~~ee~~|0.8<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|1.5<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~<br>~~ee~~|⎯<br>⎯<br>⎯<br>~~ee~~<br>~~ee~~|⎯<br>⎯<br>⎯<br>~~ee~~<br>~~ee~~|1.6<br>2.5<br>4.5<br>~~ee~~<br>~~ee~~|Ω<br>~~ee~~<br>~~ee~~|VGS= 10V, ID= 500mA<br>VGS= 4.5V, ID= 200mA<br>VGS= 2.5V, ID= 100mA<br>~~ee~~<br>~~ee~~|
|Source-Drain Diode Forward Voltage<br>~~re~~|VSD<br>~~ee~~<br>~~re~~|⎯<br>~~ee ~~<br>~~re~~|⎯<br> ~~ee~~<br>~~re~~|1.4<br>~~ee~~<br>~~re~~|V<br>~~ee~~<br>~~re~~|VGS= 0V, IS= 500mA<br>~~ee~~<br>~~re~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~re~~<br>~~Gses~~<br>~~——~~<br>~~ee~~|||||||
|Input Capacitance<br>~~ee~~<br>~~——~~|Ciss<br>~~ee~~<br>~~Gs~~|⎯<br>~~ee~~<br>~~Gs~~|46<br>~~ee~~<br>~~es~~|⎯<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Output Capacitance<br>~~——~~|Coss<br>~~Gs~~|⎯<br>~~Gs~~|5.3<br>~~es~~|⎯<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~——~~<br>~~——~~|Crss<br>~~Gs~~|⎯<br>~~Gs~~|4.0<br>~~es~~|⎯<br>~~ee~~<br>~~e~~|pF<br>~~ee~~<br>~~e~~||
|Total Gate Charge<br>~~——~~<br>~~——~~|Qg<br>~~Gs~~|⎯<br>~~Gs~~|0.6<br>~~es~~|⎯<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~——~~<br>~~——~~<br>~~**—**——~~|Qgs<br>~~Gs~~|⎯<br>~~Gs ~~|0.2<br> ~~es~~|⎯<br>~~ee~~<br>~~e~~<br>~~ee~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~||
|Gate-Drain Charge<br>~~——~~<br>~~**—**——~~|Qgd|⎯|0.1|⎯<br>~~e~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~||
|Turn-On Delay Time<br>~~——~~<br>~~**—**——~~|tD(on)|⎯|2.7|⎯<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= 30V, VGS= 10V,<br>RG= 25Ω, ID= 200mA<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~**—**——~~|tr|⎯|2.5|⎯<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~**—**——~~|tD(off)|⎯|19|⎯<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~**—**——~~|tf|⎯|11|⎯<br>~~ee~~|ns<br>~~ee~~||



7. Guaranteed by design. Not subject to product testing. 

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1.5 1<br>VGS = 10V VGS = 3V<br>VDS = 5V<br>1.2 YL) 0.8 fy<br>VGS = 5V<br>0.9 VGS = 4.5V 0.6<br>PARTE) =  Ce<br>VGS = 2.5V<br>0.6 VGS = 3.5V 0.4 T A  = 150°C<br>TA = 85°C<br>0.3 fa V GS = 2V VGS = 1.8V 0.2 TA y  = 125°C TA = 25°C<br>TA = -55°C<br>0.0 po 0<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1  Typical Output Characteristics Figure 2  Typical Transfer Characteristics<br>1 2.5<br>VGS = 4.5V<br>0.9 2<br>TT TT TA = 150°C<br>VGS = 5V<br>0.8 VGS = 10V 1.5 TA = 125 ° C<br>ae<br>TA = 85°C<br>0.7 er 1<br>TA = 25°C<br>0.6 rT Td 0.5<br>TA = -55°C<br>0.5 PPT 0<br>0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3  Typical On-Resistance vs.  Figure 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>2.4 2<br>1.8<br>2.0 TEEPE) VGS  10= V «Ss 1.6 RRR<br>ID = 500mA 1.4 VGS = 5V<br>ID = 300mA<br>1.6 1.2<br>VGS = 5V 1<br>ID = 300mA<br>1.2 0.8 V GS   10= V<br>ID = 500mA<br>a 0.6 Aa<br>0.8 0.4<br>paeunen ac 0.2 sececee<br>0.4 TELL LEE 0 TEEPE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5  On-Resistance Variation with Temperature Figure 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I  I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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2.0 TITTLE 1.0<br>1.8<br>0.8<br>1.6 TA = 150°C<br>CEE 0.6 one ian<br>1.4<br>SECT<br>ID = 1mA TA = 125°C<br>1.2 I D = 250µA 0.4<br>TA = 25°C<br>1.0 oS || TA = 85°C<br>Ht 0.2 SAT<br>0.8 TA = -55°C<br>CEES h<br>0.6 CEL ELLE 0 DS<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7  Gate Threshold Variation vs. Ambient Temperature<br>Figure 8  Diode Forward Voltage vs. Current<br>100 10<br>Ciss<br>8<br>h | | | ff ft<br>6<br>VDS = 10V<br>10 ID  250m= A<br>RE<br>4<br>C oss<br>SS C rss 2 ViH<br>ee | i<br>f = 1MHz<br>1 ELE 0 Ann<br>0 5 10 15 20 25 30 35 40 0 0.3 0.6 0.9 1.2 1.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 9  Typical Junction Capacitance Figure 10  Gate Charge<br>ge Outline Dimensions e Outline Dimensions<br>Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.<br>A<br>SOT363<br>Dim Min Max  Typ<br>A  0.10 0.30  0.25<br>B C<br>B  1.15 1.35  1.30<br>C  2.00 2.20  2.10<br>eee === D  0.65 Typ<br>| ——— F  0.40 0.45  0.425<br>H H  1.80 2.20  2.15<br>J  0  0.10  0.05<br>K M K  0.90 1.00  1.00<br>L  0.25 0.40  0.30<br>J M  0.10 0.22  0.11<br>D F L<br>α  0°  8°  -<br>| | [| | |<br>All Dimensions in mm<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V) IS<br>GS(th)<br>V<br>, JUNCTION CAPACITANCE (pF)  GATE THRESHOLD VOLTAGE (V)<br>CT GS<br>V<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions e Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

|~~C2~~<br>~~C2~~<br>~~Ke~~||||||
|---|---|---|---|---|---|
|~~X~~<br>Z<br>Y<br>C1<br>G<br>~~ioe~~<br>~~Poot~~<br>Ik~~>~~|||**Dimensions**<br>**Z**<br>**G**<br>**X**<br>**Y**<br>**C1**<br>**C2**||**Value(in mm)**<br>2.5<br>1.3<br>0.42<br>0.6<br>1.9<br>0.65|



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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

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DMN53D0LDW Document number: DS37072 Rev. 2 - 2 

June 2014 © Diodes Incorporated