DMN4034SSD-13

**A Product Line of Diodes Incorporated** 

**DMN4034SSD** 

## **40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = 25**°**C**|
|40V|34mΩ@ VGS= 10V|6.3A|
||59mΩ@ VGS = 4.5V|4.8A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) test in production 

- Low on-resistance 

- Fast switching speed 

- Max Qg rated 

- **“Green” component and RoHS compliant (Note 1)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Motor control 

- Backlighting 

- DC-DC Converters 

- Power management functions 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0 (Note 1) 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See diagram below 

- Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 

- Weight: 0.074 grams (approximate) 

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SO-8<br>S1 D1<br>D1 D2<br>G1 D1<br>S2 D2 G1 G2<br>G2 D2<br>S1 S2<br>Top View  Top View  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 1) 

||||||
|---|---|---|---|---|
|**Product**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel **|
|DMN4034SSD-13|N4034SD|13|12|2,500|



Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website.  For packaging details, go to our website. 

## **Marking Information** 

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N4034SD<br>YY WW<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking N4034SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 

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DMN4034SSD Document Number DS32105 Rev 2 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

## **DMN4034SSD** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source voltage|||VDSS|40|V|
|Gate-Source voltage||(Note 2)|VGS|±20|V|
|Single Pulsed Avalanche Energy||(Note 9)|EAS|27|mJ|
|Single Pulsed Avalanche Current||(Note 9)|IAS|15.25|A|
|Continuous Drain current<br>~~==~~|VGS= 10V<br>~~==~~|(Note4)<br>~~==~~|ID<br>~~eee~~|6.3<br>~~eee~~|A<br>~~eee~~|
|||TA= 70°C(Note 4)<br>~~==~~||5.0<br>~~eee~~||
|||(Note 3)<br>~~==~~||4.8<br>~~eee~~||
|Pulsed Drain current<br>~~==~~|VGS= 10V<br>~~==~~|(Note 5)<br>~~== ~~|IDM<br> ~~eee~~|24.8<br>~~eee~~|A<br>~~eee~~|
|Continuous Source current(Bodydiode)||(Note 4)|IS|3.3|A|
|Pulsed Source current(Bodydiode)||(Note 5)|ISM|24.8|A|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Power dissipation<br>Linear derating factor|(Notes 3 & 6)|PD|1.25<br>10.0|W<br>mW/°C|
||(Notes 3 & 7)||1.80<br>14.3||
||(Notes 4 & 6)||2.14<br>17.2||
|Thermal Resistance, Junction to Ambient|(Notes 3 & 6)|RθJA|100|°C/W|
||(Notes 3 &7)||70||
||(Notes4& 6)||58||
|Thermal Resistance,Junction to Lead|(Notes 6 & 8)|RθJL|55||
|Operatingand storage temperature range||TJ,TSTG|-55 to 150|°C|



- Notes: 2. AEC-Q101 VGS maximum is ±16V. 

   3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

   4. Same as note (3), except the device is measured at t ≤ 10 sec. 

   5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs.  The pulse current is limited by the maximum junction temperature. 

   6. For a dual device with one active die. 

   7. For a device with two active die running at equal power. 

   8. Thermal resistance from junction to solder-point (at the end of the drain lead). 

   9. UIS in production with L = 100µH, VDD = 40V. 

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DMN4034SSD Document Number DS32105 Rev 2 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DMN4034SSD** 

## **Thermal Characteristics** 

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2.0<br>R  Limited ed PT TT | J 7 ft fT J 7 Tt TT TT Ty 7<br>DS(on) 1.8<br>10 ————— >.~ =a BERSEEEEEE\<br>1.6<br>1.4<br>1 Two active die<br>_——|| 7 | | PAAOe NYOSSTAA TANT 1.2 pe—~ | NG\ fd<br>DC<br>100m eepol| 1s UEei|eS~~ie 1.0 ptOSIN TS N =<br>100ms 0.8<br>10m 10ms 0.6<br>Single Pulse One active die<br>1m One active dieTamb=25°C -—+aee 1ms Weeon 100µs _ le 0.40.20.0 POEPSaeeNONE SNCEEENII<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>110<br>100 | T amb =25 ° C aCoCo oo ooh ee Single Pulse it!<br>90 || One active die CUM TT TTT arv4TT 100 Mh ‘ Tamb=25°C<br>80 One active die<br>70 e/a ral ly oiFHao i rthHt<br>60 D=0.5 ,<br>SSS wall cca” cae FHHHHESStH HH HE<br>50 PyPTPTae ge 10 FEM COME CTO CUCU CUTIE<br>40<br>HPC AgePP ENE<br>30 D=0.2 Single Pulse<br>pe Lag enact<br>20 }Seeee D=0.05 Mti ASa ati mast setlsine Satiiiaaetiamtiau<br>10 CT 1<br>Llandeilo Ort D=0.1 HH UII TAM LAT TUTTI ie<br>0 ee (Laat!ail| | | 1TN TTT TT PESSE Se er mete eet tate<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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DMN4034SSD Document Number DS32105 Rev 2 - 2 

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**A Product Line of Diodes Incorporated** | **DMN4034SSD** [ 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **||
|**OFFCHARACTERISTICS**||||||||
|Drain-Source Breakdown Voltage|BVDSS|40|⎯|⎯|V|ID= 250μA,VGS= 0V||
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|1|μA|VDS= 40V,VGS= 0V||
|Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS=±20V,VDS= 0V||
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1.0<br>~~ee~~|⎯<br>~~ee~~|3.0<br>~~ee~~|V<br>~~ee~~|ID= 250μA,VDS= VGS<br>~~ee~~||
|Static Drain-Source On-Resistance (Note 10)<br>~~ee~~|RDS (ON)<br>~~ee~~|⎯<br>~~ee~~|0.023<br>~~ee~~|0.034<br>~~ee~~|Ω<br>~~ee~~|VGS= 10V,ID= 6A<br>~~ee~~||
||||0.039<br>~~ee~~|0.059<br>~~ee~~||VGS= 4.5V,ID= 5A<br>~~ee~~||
|Forward Transconductance(Notes 10 & 11)<br>~~ee~~|gfs<br>~~ee~~|⎯<br>~~ee~~|20.5<br>~~ee~~|⎯<br>~~ee~~|S<br>~~ee~~|VDS= 15V,ID= 6A<br>~~ee~~||
|Diode Forward Voltage(Note 10)<br>~~ee~~|VSD<br>~~ee~~|⎯<br>~~ee~~|0.87<br>~~ee~~|1.1<br>~~ee~~|V<br>~~ee~~|IS= 6A,VGS= 0V<br>~~ee~~||
|Reverse recoverytime(Note 11)<br>~~ee~~|trr<br>~~ee~~|~~ee~~|11.2<br>~~ee~~|⎯<br>~~ee~~|ns<br>~~ee~~|IS= 2A, di/dt= 100A/μs<br>~~ee~~||
|Reverse recoverycharge(Note 11)<br>~~ee~~|Qrr<br>~~ee~~|⎯<br>~~ee~~|4.8<br>~~ee~~|⎯<br>~~ee~~|nC<br>~~ee~~|||
|**DYNAMIC CHARACTERISTICS(Note 11)**||||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|⎯<br>~~ee~~|453<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|VDS= 20V, VGS= 0V<br>f = 1MHz<br>~~ee~~<br>~~eee~~||
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|⎯<br>~~ee~~|79.1<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~——~~|Crss<br>~~ee~~|⎯<br>~~ee~~|40.5<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~|||
|Total Gate Charge(Note 12)<br>~~ee~~<br>~~——~~|Qg<br>~~ee~~|⎯<br>~~ee~~|4.9<br>~~ee~~<br>~~ee~~|8<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|VGS= 4.5V<br>~~ee~~<br>~~eee~~|VDS= 20V<br>ID= 6A<br>~~ee~~<br>~~e~~<br>~~ee~~|
|Total Gate Charge(Note 12)<br>~~——~~|Qg|⎯|10<br>~~ee~~|18<br>~~ee~~|nC<br>~~ee~~|VGS= 10V<br>~~eee~~<br>~~ee~~||
|Gate-Source Charge(Note 12)<br>~~——~~|Qgs|⎯|1.8<br>~~ee~~|⎯<br>~~ee~~|nC<br>~~ee~~|||
|Gate-Drain Charge(Note 12)<br>~~——~~<br>~~—<—<<=~~|Qgd|⎯|2.4<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|||
|Turn-On DelayTime(Note 12)<br>~~——~~<br>~~—<—<<=~~|tD(on)|⎯|2.7<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDD= 20V, VGS= 10V<br>ID= 1A, RG≅6.0Ω<br>~~eee~~<br>~~ee~~||
|Turn-On Rise Time(Note 12)<br>~~——~~<br>~~—<—<<=~~|tr|⎯|2.7<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|||
|Turn-Off DelayTime(Note 12)<br>~~—<—<<=~~|tD(off)|⎯|14|⎯<br>~~ee~~|ns<br>~~ee~~|||
|Turn-Off Fall Time(Note 12)<br>~~—<—<<=~~|tf|⎯|6|⎯<br>~~ee~~|ns<br>~~ee~~|||



Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 11. For design aid only, not subject to production testing. 

12. Switching characteristics are independent of operating junction temperatures. 

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DMN4034SSD Document Number DS32105 Rev 2 - 2 

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**DMN4034SSD** 

## **Typical Characteristics** 

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T = 25°C 10V 4.5V T = 150°C 10V<br>10 pS 4V 10 Pe 4V<br>3.5V<br>3.5V<br>re er 3V<br>1 1<br>2.5V<br>PT uty TT Ty tT een aae<br>0.1 [ih oan 3V 0.1 eee<br>Er<br>2V<br>V<br>GS V<br>GS<br>0.01 FL 0.01 Pomi eeFF<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>10 VDS = 10V V GS  = 10V<br>DF 1.4 so I  = 12A 4<br>D<br>1 1.2 R DS(on)<br>ey 4 ee ae<br>SSS T = 150°C 7 1.0 ><br>0.1<br>ff OS<br>T = 25°C 0.8<br>V<br>0.01 V  = V GS(th)<br>ee ey Ay ee 0.6 GS DS ~~ 4<br>sf fs sss | I D = 250uA ON<br>1E-3 ee 0.4 | |<br>1 2 3 4 5 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>10<br>SSS T = 25°C 3V SS 3.5V VGS 10 a a<br>Pe Se SS Se<br>SL) LL ——aaa<br>1 T = 150°C<br>4V 1<br>Serta eet Seer eee SSSSS T = 25°C<br>EN a any<br>0.1 0.1<br>4.5V<br>10V<br>Vgs = 0V<br>0.01 PT) 0.01 a Aae<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>)<br>Ω<br>  Reverse Drain Current (A)<br> Drain-Source On-Resistance ( ISD<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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DMN4034SSD Document Number DS32105 Rev 2 - 2 

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**DMN4034SSD** 

## **Typical Characteristics – continued** 

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10<br>600 a V  = 0V<br>GS<br>500 resti f = 1MHz 8 HEEEEEE AAA<br>a<br>400 a C ISS 6 eee<br>C<br>OSS<br>300 —~ TLL TAAR EY eee | | | | dT hcdT Ar<br>FPee a C RSS IHHe 4 iY<br>200 esoe | | [yvetTT] | | | V tl  = 20V<br>2 DS<br>100 eh, ee 4AT oT Td ID = 6A i i<br>ee<br>0 a 0 Yi | | | | l<br>0.1 1 10 0 2 4 6 8 10<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)   Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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DMN4034SSD Document Number DS32105 Rev 2 - 2 

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**A Product Line of Diodes Incorporated** 

**DMN4034SSD** 

## **Test Circuits** 

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Q G<br>~-. ee ee<br>V G Q GS Q GD<br>|<br>Charge<br>SS EEE<br>**----- End of picture text -----**<br>


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Current<br>regulator<br>p| ono sa s e<br>12V 50k Same as<br>‘L| oado  [ D.U.T |!<br>V DS<br>O IG<br>D.U.T<br>ID<br>V GS<br>**----- End of picture text -----**<br>


## **Basic gate charge waveform** 

## **Gate charge test circuit** 

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90%V DS M/fN f R D<br>| |<br>| V GS V DS<br>10% /\ || R G VDD<br>V GS<br>re N e 4 [| ian =<br>lp! td(on) —$+ tr le I t d(off) tr || Duty actor 0 .1%<br>t(on) t(on)<br>**----- End of picture text -----**<br>


## **Switching time waveforms** 

## **Switching time test circuit** 

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DMN4034SSD Document Number DS32105 Rev 2 - 2 

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**A Product Line of Diodes Incorporated** | **DMN4034SSD** [| 

## **Package Outline Dimensions** 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|1|
|“|
|Pin|||||||||t|
|UU|duos|Seating Plane|
|DIM|Inches|Millimeters|DIM|Inches|Millimeters|
|Min.|Max.|Min.|Max.|Min.|Max.|Min.|Max.|
|ee|ee|
|A|0.053|0.069|1.35|1.75|e|0.050 BSC|1.27 BSC|
|a|eeee|
|A1|0.004|0.010|0.10|0.25|b|0.013|0.020|0.33|0.51|
|a|
|D|0.189|0.197|4.80|5.00|c|0.008|0.010|0.19|0.25|
|a|ee|
|H|0.228|0.244|5.80|6.20|θ|0°|8°|0°|8°|
|a|
|E|0.150|0.157|3.80|4.00|h|0.010|0.020|0.25|0.50|
|aee|
|L|0.016|0.050|0.40|1.27|-|-|-|-|-|
|aeeee|

**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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1.52<br>0.060<br>O T E<br>7.0 4.0<br>0.275 0.155<br>0.6 1.27<br>0.024 rT) 0.050<br>mm<br>inches<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A. Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated 

## **www.diodes.com** 

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