DMN32D2LDF-7

**DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL** ~~—~~ **ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** Please click here to visit our online spice models database. Please click here to visit our online spice models database. 

## **Features** 

## **Mechanical Data** 

- Common Source Dual N-Channel MOSFET 

   - Case: SOT-353 

- Low On-Resistance 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Very Low Gate Threshold Voltage, 1.2V max 

   - Moisture Sensitivity: Level 1 per J-STD-020C 

- Low Input Capacitance 

   - Terminal Connections: See Diagram 

- Fast Switching Speed 

   - Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 

- Low Input/Output Leakage 

- Small Surface Mount Package 

   - Marking Information: See Page 3 

- ESD Protected Gate 

   - Ordering Information: See Page 3 

- **Lead Free By Design/RoHS Compliant (Note 2)** 

   - Weight: 0.006 grams (approximate) 

- **"Green" Device (Note 3)** 

   - 

- **Qualified to AEC-Q 101 Standards for High Reliability** 

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G2 S G1<br>SOT-353 G2 S G1<br>Q1 Q2<br>Ly<br>ESD PROTECTED TOP VIEW BOTTOM VIEW D2 D1 D2 D1<br>TOP VIEW Schematic Diagram<br>**----- End of picture text -----**<br>


## **Maximum Ratings** Q1, Q2 @TA = 25°C unless otherwise specified 

|||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain Source Voltage|VDSS|30|V|
|Gate-Source Voltage|VGSS|±10|V|
|Drain Current(Note 1)|ID|400|mA|



## **Thermal Characteristics** Q1, Q2 @TA = 25°C unless otherwise specified 

|**Thermal Characteristics  **Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|
|Total Power Dissipation(Note 1)|PD|280|mW|
|Thermal Resistance,Junction to Ambient(Note 1)|RθJA|446|°C/W|
|Operatingand Storage Temperature Range|Tj,TSTG|-55 to +150|°C|



**Electrical Characteristics** Q1, Q2 @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**Q1, Q21, Q2, Q2Q22 @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**<br>~~Ge~~||**Symbol**<br>~~Ge~~|**Min**<br>~~Ge~~<br>~~Ge~~|**Typ**<br>~~Ge~~<br>~~Ge~~|**Max**<br>~~Ge~~|**Unit**<br>~~Ge~~|**Test Condition**<br>~~Ge~~|
|**OFF CHARACTERISTICS(Note 4)**<br>~~Ge~~<br>~~pT~~||||||||
|Drain-Source Breakdown Voltage<br>~~pf~~||BVDSS<br>~~pf~~|30<br>~~pf~~|⎯<br>~~pf~~|⎯<br>~~pf~~|V<br>VGS<br>~~pf~~|GS = 0V,ID= 250μA<br>~~pf~~|
|Zero Gate Voltage Drain Current<br>@TC = 25°C<br>~~po~~||IDSS<br>~~po~~|⎯<br>~~po~~|⎯<br>~~po~~|1<br>~~po~~|μA<br>VD<br>~~po~~|DS = 30V,VGS= 0V<br>~~po~~|
|Gate-Body Leakage||IGSS|⎯|⎯|±10<br>±1|μA<br>VGS<br>VGS|GS= ±10V, VDS= 0V<br>GS= ±5V,VDS= 0V|
|**ON CHARACTERISTICS(Note 4)**<br>~~pT~~<br>~~GO~~<br>~~CO~~<br>~~SO~~||||||||
|Gate Threshold Voltage<br>~~a~~||VGS(th)<br>~~a~~|0.6<br>~~a~~<br>~~GO~~|⎯<br>~~a~~<br>~~GO~~|1.2<br>~~a~~<br>~~CO~~|V<br>VD<br>~~a~~<br>~~SO~~|DS= VGS,ID= 250μA<br>~~a~~<br>~~SO~~|
|Static Drain-Source On-Resistance||RDS (ON)|⎯<br>⎯<br>⎯<br>~~GO~~|⎯<br>⎯<br>⎯<br>~~GO~~|2.2<br>1.5<br>1.2<br>~~CO~~|Ω<br>VGS<br>VGS<br>VGS<br>~~SO~~|GS= 1.8V, ID= 20mA<br>GS= 2.5V, ID= 20mA<br>GS= 4.0V,ID= 100mA<br>~~SO~~|
|Forward Transconductance<br>~~po~~|||Yfs|<br>~~po~~|100<br>~~po~~|⎯<br>~~po~~<br>~~CO~~|⎯<br>~~po~~<br>~~CO~~|mS<br>VD<br>~~po~~<br>~~SO~~|DS=10V,ID= 0.1A<br>~~po~~<br>~~SO~~|
|Source-Drain Diode Forward Voltage<br>~~a~~||VSD<br>~~a~~|0.5<br>~~a~~|⎯<br>~~a~~<br>~~CO~~|1.4<br>~~a~~<br>~~CO~~|V<br>VGS<br>~~a~~<br>~~SO~~|GS= 0V,IS= 115mA<br>~~a~~<br>~~SO~~|
|**DYNAMIC CHARACTERISTICS**<br>~~CO~~<br>~~SO~~<br>~~pT~~||||||||
|Input Capacitance<br>~~a~~||Ciss<br>~~a~~|⎯<br>~~a~~|39<br>~~a~~|⎯<br>~~a~~|pF<br>pF<br>pF<br>VDS<br>f = 1.0MHz<br>~~a~~<br>~~ee~~<br>~~GG~~|DS= 3V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance<br>~~ee~~||Coss<br>~~ee~~|⎯<br>~~ee~~|10<br>~~ee~~|⎯<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~GG~~<br>~~eeee~~||Crss<br>~~GG~~<br>~~ee~~|⎯<br>~~GG~~<br>~~ee~~|3.6<br>~~GG~~<br>~~ee~~|⎯<br>~~GG~~<br>~~ee~~|||
|Switching Time<br>~~ee~~|Turn-on Time<br>~~ee~~|ton<br>~~ee~~|⎯<br>~~ee~~|11<br>~~ee~~|⎯<br>~~ee~~|nS<br>nS<br>VDD<br>VGS<br>~~ee~~|DD= 5V, ID= 10 mA,<br>GS= 0-5V|
||Turn-off Time<br>~~ee~~<br>~~a ee~~|toff<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|51<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|||



- Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

- 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

   4.   Short duration pulse test used to minimize self-heating effect. 

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DMN32D2LDF 

January 2008 © Diodes Incorporated 

Document number: DS31238 Rev. 3 - 2 

**DMN32D2LDF** 

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DMN32D2LDF Document number: DS31238 Rev. 3 - 2 

January 2008 © Diodes Incorporated 

**DMN32D2LDF** 

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1.8<br>1.6<br>tiititiy<br>VGS = 4V<br>1.4 ID = 100mA<br>Y VIDGS = 20mA = 2.5V<br>1.2 VGS = 1.8V<br>ID = 20mA<br>iL 4<br>1 V,<br>/<br>0.8<br>0.6<br>-75 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (C°)<br>Fig. 7 Normalized Static Drain-Source On-Resistance<br>vs. Ambient Temperature<br>, STATIC DRAIN-SOURCE<br>DS(ON)<br>R ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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50<br>f = 1 MHz<br>40 Lo \<br>Ciss<br>a<br>30<br>20 \<br>10<br>Coss<br>ee<br>Crss<br>0 ————re<br>0 5 10 15 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Capacitance<br>, CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN32D2LDF-7|SOT-353|3000/Tape &Reel|



Notes: 5.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** (Note 6) 

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G2 S G1<br>KDV<br>D2 D1<br>YM<br>**----- End of picture text -----**<br>


KDV = Product Type Marking Code (See Note 6) YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 

Notes: 6.   Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 

Date Code Key 

|Date Code Keyy|||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**||**2007**||||**2008**||||**2009**||||**2010**||||**2011**||||**2012**|||
|**Code**||U||||V||||W||||X||||Y||||Z|||
||||||||||||||||||||||||||
|**Month**|**Jan**|||**Feb**|**Mar**|||**Apr**|**May**|||**Jun**|**Jul**|||**Aug**|**Sep**|||**Oct**|**Nov**|||**Dec**|
|**Code**|1|||2|3|||4|5|||6|7|||8|9|||O|N|||D|



3 of 4 **www.diodes.com** 

DMN32D2LDF Document number: DS31238 Rev. 3 - 2 

January 2008 © Diodes Incorporated 

**DMN32D2LDF** 

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Package Outline Dimensions<br>A<br>SOT-353<br>ii c<—. Dim  Min  Max<br>TOP VIEW B C A  0.10 0.30<br>B  1.15 1.35<br>C 2.00 2.20<br>D  0.65 Nominal<br>wl.<br>F  0.30 0.40<br>H H  1.80 2.20<br>J  ⎯  0.10<br>K M K  0.90 1.00<br>L  0.25 0.40<br>M  0.10 0.25<br>J D F L α 0°  8°<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


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Suggested Pad Layout<br>E E<br>oo Dimensions Value (in mm)<br>Z  2.5<br>G 1.3<br>X  0.42<br>Y  0.6<br>( Z G ae C C 1.9<br>E  0.65<br>Y<br>foe oe<br>X<br>K<br>**----- End of picture text -----**<br>


## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

## LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

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DMN32D2LDF Document number: DS31238 Rev. 3 - 2 

January 2008 © Diodes Incorporated