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DMN3190LDWQ-7
Dual MOSFET, N Channel, 30 V, 30 V, 1 A, 1 A, 0.19 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 320mW
- Power Dissipation P Channel: 320mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 1A
- Continuous Drain Current Id P Channel: 1A
- Drain Source On State Resistance N Channel: 0.19ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.078 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMN3190LDW**
**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**BVDSS**|**RDS(ON) (MAX)**|**Package**|**ID (MAX)**<br>**TA = +25°C**|
|30V|190mΩ@VGS= 10V|SOT363|1A|
||335mΩ@VGS= 4.5V||0.75A|
## **Description**
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Features and Benefits**
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.**
- **https://www.diodes.com/quality/product-definitions/**
## **Mechanical Data**
## **Applications**
- Motor Control
- Power Management Functions
- Load Switch
- Case: SOT363
- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See Diagram
- Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 © **e3**
- Weight: 0.006 grams (Approximate)
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SOT363<br>**----- End of picture text -----**<br>
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D1 D2 D1 G2 S2<br>G1<br>‘<br>fa) G2<br>ESD PROTECTED<br>Gate Protection Diode S1 oo SD S1 G1 D2<br>Top View<br>Q1 N-Channel Q2 N-Channel Top View<br>Pin Out<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN3190LDW-7|SOT363|3000/Tape &Reel|
|DMN3190LDW-13|SOT363|10000/Tape &Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
## **Marking Information**
N31 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019)
- M = Month (ex: 9 = September)
|Date CodeKey|||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2011**||||**~**|||**2019**|||**2020**||||**2021**|||**2022**|||**2023**||
|**Code**|Y||||~|||G|||H||||I|||J||||K|
||||||||||||||||||||||||
|**Month**|**Jan**||**Feb**||**Mar**|**Apr**||**May**||**Jun**|||**Jul**||**Aug**|**Sep**||**Oct**||**Nov**||**Dec**|
|**Code**|1||2||3||4|5||6|||7||8|9||O||N||D|
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DMN3190LDW Document number: DS36192 Rev. 5 - 2
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**DMN3190LDW**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|1000<br>900|mA|
||t < 5s|TA= +25°C<br>TA= +70°C|ID|1300<br>1000|mA|
|Maximum Continuous Body Diode Forward Current (Note 5)|||IS|0.5|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|9.6|A|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.32|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|395|°C/W|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|0.4|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|320|°C/W|
|Thermal Resistance, Junction to Case||RθJC|143||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|
**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~SSeS~~|**Symbol**<br>~~SSeS~~|**Min**<br>~~SSeS~~|**Typ **<br>~~SSeS~~|**Max**<br>~~SSeS~~|**Unit**<br>~~SSeS~~|**Test Condition**<br>~~SSeS~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~SSeS~~|||||||
|Drain-Source Breakdown Voltage<br>~~SSeS~~|BVDSS<br>~~SSeS~~|30<br>~~SSeS~~|—<br>~~SSeS~~|—<br>~~SSeS~~|V<br>~~SSeS~~|VGS= 0V,ID= 1mA<br>~~SSeS~~|
|Zero Gate Voltage Drain Current@TC= +25°C<br>~~SSeS~~|= +25°C<br>IDSS<br>~~SSeS~~|—<br>~~SSeS~~|—<br>~~SSeS~~|1<br>~~SSeS~~|μA<br>~~SSeS~~|VDS= 30V,VGS= 0V<br>~~SSeS~~|
|Gate-Source Leakage<br>~~Cf~~|IGSS<br>~~Cf~~|—<br>~~Cf~~|—<br>~~Cf~~|±10<br>~~Cf~~|μA<br>~~Cf~~|VGS= ±20V,VDS= 0V<br>~~Cf~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~i~~<br>~~—————~~|||||||
|Gate Threshold Voltage<br>~~a~~<br>~~i~~|VGS(TH)<br>~~DO~~|1.5<br>~~DO~~<br>~~—————~~|—<br>~~DO~~<br>~~—————~~|2.8<br>~~(~~<br>~~—————~~|V<br>~~( ~~<br>~~—————~~|VDS= VGS,ID= 250μA<br> ~~(~~<br>~~—————~~|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)<br>~~ND~~|—<br>~~—————~~|122<br>~~—————~~|190<br>~~—————~~|mΩ<br>~~—————~~<br>~~S(O~~|VGS= 10V,ID= 1.3A<br>~~—————~~|
|||—<br>~~—————~~<br>~~ND~~|181<br>~~—————~~<br>~~GOR~~|335<br>~~—————~~<br>~~GOR~~||VGS= 4.5V,ID= 290mA<br>~~—————~~<br>~~S(O~~|
|Diode Forward Voltage<br>~~i~~<br>~~RD~~|VSD<br>~~RD~~<br>~~ND~~|—<br>~~—————~~<br>~~RD~~<br>~~ND~~|—<br>~~—————~~<br>~~RD~~<br>~~GOR~~|1.2<br>~~—————~~<br>~~RD~~<br>~~GOR~~|V<br>~~—————~~<br>~~RD~~<br>~~S(O~~|VGS= 0V,IS= 250mA<br>~~—————~~<br>~~RD~~<br>~~S(O~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ND~~<br>~~GOR~~<br>~~S(O~~|||||||
|Input Capacitance<br>~~Ce~~<br>~~———~~|Ciss<br>~~———~~|—<br>~~———~~|87<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 20V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|—<br>~~———~~|17<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|12<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|—<br>~~———~~|69.8<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|f = 1MHz,VGS= 0V,VDS= 0V<br>~~———~~|
|Total Gate Charge(VGS= 4.5V)<br>~~RD~~<br>~~Cn~~|Qg<br>~~RD~~|—<br>~~RD~~|0.9<br>~~RD~~|—<br>~~RD~~|nC<br>~~RD~~|VDS= 10V, ID= 250mA<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~Cn~~|Qg|—|2.0|—|nC||
|Gate-Source Charge<br>~~Cn~~|Qgs|—|0.3|—|nC||
|Gate-Drain Charge<br>~~—————~~|Qgd|—|0.3|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~—————~~|tD(ON)|—|4.5|—<br>~~ee~~|ns<br>~~ee~~|VDD= 30V, VGS= 10V,<br>RG= 10Ω, ID= 100mA<br>~~ee~~|
|Turn-On Rise Time<br>~~—————~~|tR|—|8.9|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—————~~|tD(OFF)|—|30.3|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—————~~|tF|—|15.6|—<br>~~ee~~|ns<br>~~ee~~||
6. Device mounted on 1” 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN3190LDW Document number: DS36192 Rev. 5 - 2
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**DMN3190LDW**
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2.0 2<br>VGS = 10V<br>1.8 He | V = 5.0VDS<br>1.6 | V GS = 4.5V 1.6 ceeeeee<br>1.4 V GS = 3.5V [A)] (T<br>VGS = 4.0V<br>1.2 [N] RE 1.2<br>R<br>Poe U ee<br>1.0 C T = 150°CA<br>0.8 [IN] A 0.8<br>R<br>D T = 125°CA<br>0.6 , D T = 85°CA<br>0.4 VGS = 3.0V I 0.4 T = 25°CA<br>0.2 T = -55°CA<br>VGS = 2.5V<br>0.0 0<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.3 0.4<br>)<br>0.275 Pf | | | | | tt V = 4.5VGS<br>[(] E<br>C 0.35<br>0.25 [N] A T = 150°CA<br>0.225 0.3<br>0.2 VGS = 4.5V [SIST] - [R] E 0.25 T = 12 A 5°C<br>0.175 [N] OE T = 85°CA<br>0.15 SST C 0.2 ee<br>R<br>0.125 V GS = 10V T = 25°CA<br>0.15<br>0.1 - [SOU] T = -55°CA<br>0.075 SSS [IN] RA 0.1<br>D<br>0.05 Pt | | | | tt |e , )<br>0.05<br>0.025 ( [ON] SD<br>R<br>0 PS 0 HEHEt +<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>ID, DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A)D<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2.52 TiLELEL) LEE 0.3 VGS = 4.5V<br>VGS 10= V ID = 5A<br>ID = 0.5A 0.2<br>=e<br>ts PL TT<br>1.5<br>1 IVDGS= 250mA= 4.5V 0.1 VIGS D = 10A 10= V<br>0.5 ifet cee<br>PTT | TTL<br>0 LEELELL 0 TELL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>**----- End of picture text -----**<br>
3 of 6 **www.diodes.com**
DMN3190LDW
October 2019
© Diodes Incorporated
Document number: DS36192 Rev. 5 - 2
**DMN3190LDW**
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3<br>2.8 Pi] | | | ft ft ft<br>2.6 P|<br>2.4 P| ft| || |tttt| ft<br>2.2<br>{| | | ID = 1mA | tt<br>2<br>ID = 250μA ID = 250 礎<br>1.8<br>1.6<br>P| | fd] CARN<br>1.4 P| ft | tt POA<br>1.2 Pf | tf | tt tl<br>1 Ft | | | ft ft ft<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 Gate Threshold Variation vs. Junction Temperature Figure 7 Gate Threshold Variation vs. Ambient Temperature<br>1000<br>f = 1MHz<br>————a<br>eg<br>100 Ciss<br>aSSSa<br>S—_—————Wo<br>C oss<br>a ee<br>10 Crss<br>a OQ<br>——————<br>1 Ft | | [| ft<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Junction Capacitance<br>100<br>RDS(ON)<br>Limited<br>10 PW = 1ms PW = 100µs<br>1<br>PW = 10ms<br>0.1<br>PW = 100ms<br>TJ(Max) = 150 ℃ PW = 1s<br>0.01 TC = 25 ℃ {| PW = 10s NT<br>Single Pulse DC<br>DUT on 1*MRP<br>Board VGS = 10V re i eeee<br>0.001<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>
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1.82 [|<br>1.6 | ff<br>[A)] 1.4 e eeeee ee eee<br>1.2<br>[| | T = 25°CA ff<br>C [URRENT(] 1<br>0.8<br>[URCE] O<br>S 0.6 PF | |ft<br>S<br>I [,] 0.40.2 ee[|<br>0 | |[Yt]ft yy<br>0 0.3 0.6 0.9 1.2 1.5<br>V , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 8 Diode Forward Voltage vs. Current<br>10<br>VDS = 10V<br>ID 250m= A<br>LL /<br>8<br>7<br>6 Sy tl Py/ fo<br>4 /<br>2<br>f |<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 10 Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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DMN3190LDW Document number: DS36192 Rev. 5 - 2
October 2019 © Diodes Incorporated
**DMN3190LDW**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**SOT363**
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SOT363<br>E Toy E1 — Dim Min Max Typ<br>A1 0.00 0.10 0.05<br>A2 0.90 1.00 0.95<br>b 0.10 0.30 0.25<br>c 0.10 0.22 0.11<br>D 1.80 2.20 2.15<br>F<br>b E 2.00 2.20 2.10<br>E1 1.15 1.35 1.30<br>e 0.650 BSC<br>D F 0.40 0.45 0.425<br>L 0.25 0.40 0.30<br>a 0° 8° --<br>All Dimensions in mm<br>A2<br>c a<br>be A1 e Ga, L =<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT363<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout yout out**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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C<br>Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G 1.300<br>Y1 G<br>X 0.420<br>Y 0.600<br>Y1 2.500<br>£<br>Y<br>moo X oS<br>**----- End of picture text -----**<br>
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DMN3190LDW Document number: DS36192 Rev. 5 - 2
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**DMN3190LDW**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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DMN3190LDW Document number: DS36192 Rev. 5 - 2
October 2019 © Diodes Incorporated
Updated at June 9, 2026
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