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DMN3135LVT-7
Dual MOSFET, N Channel, 30 V, 30 V, 3.5 A, 3.5 A, 0.035 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOT-26
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3.5A
- Power Dissipation N Channel: 840mW
- Power Dissipation P Channel: 840mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.5A
- Continuous Drain Current Id P Channel: 3.5A
- Drain Source On State Resistance N Channel: 0.035ohm
- Drain Source On State Resistance P Channel: 0.035ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.148 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**DMN3135LVT** CC **30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = 25°C**|
|30V|60mΩ@ VGS= 10V|3.5A|
||100mΩ@ VGS= 4.5V|2.8A|
## **Features and Benefits**
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 standards for High Reliability**
## **Description and Applications**
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Mechanical Data**
- Case: TSOT26
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Backlighting
- DC-DC Converters
- Power management functions
- Terminals Connections: See Diagram
- Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.013 grams (approximate)
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TSOT26 G1 1 6 D1<br>S2 2 5 S1<br>G2 3 4 D2<br>**----- End of picture text -----**<br>
Top View
Top View
Equivalent Circuit
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information**(Note 4)|||
|---|---|---|
|**Part Number **|**Case **|**Packaging **|
|DMN3135LVT-7|TSOT26|3000 /Tape &Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
## **Marking Information**
31D = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September)
YM = Date Code Marking **31D** Y = Year (ex: X = 2010) M = Month (ex: 9 = September) Date Code Key **Year 2010 2011 2012 2013 2014 2015 2016 Code** X Y Z A B C D ~~a a~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~rrr~~ **Code** 1 2 3 4 5 6 7 8 9 O N D
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DMN3135LVT Document number: DS35408 Rev. 6 - 2
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**DMN3135LVT**
## **Maximum Ratings** @ TA = 25°C unless otherwise stated
|**Maximum Ratingsgss** @ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Maximum Ratingsgss** @ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Maximum Ratingsgss** @ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Maximum Ratingsgss** @ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Maximum Ratingsgss** @ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Maximum Ratingsgss** @ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= 25°C<br>TA= 70°C|ID|3.5<br>2.7|A|
||t<10s|TA= 25°C<br>TA= 70°C|ID|4.3<br>3.3|A|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= 25°C<br>TA= 70°C|ID|2.8<br>2.1|A|
||t<10s|TA= 25°C<br>TA= 70°C|ID|3.4<br>2.6|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|25|A|
|Maximum BodyDiode Forward Current(Note 5)|||IS|1.5|A|
## **Thermal Characteristics** @ TA = 25°C unless otherwise stated
|**Thermal Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Thermal Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated||||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Units**|
|Total Power Dissipation(Note 5)||PD|0.84|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RθJA|155|°C/W|
||t<10s||109||
|Total Power Dissipation(Note 6)||PD|1.27|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady state|RθJA|102|°C/W|
||t<10s||72||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|34||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
## **Electrical Characteristics** @ TA = 25°C unless otherwise stated
|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic **|**Symbol **|**Min**|**Typ **|**Max **|**Unit **|**Test Condition **|
|**OFFCHARACTERISTICS (Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|-|-|V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|-|-|1.0|µA|VDS= 24V,VGS= 0V|
|Gate-Source Leakage|IGSS|-|-|±100|nA|VGS= ±20V,VDS= 0V<br>~~=~~|
|**ON CHARACTERISTICS (Note 7) **<br>~~EEE~~<br>~~=~~|||||||
|Gate Threshold Voltage<br>~~EEE~~|VGS(th)<br>~~EEE~~|1.3<br>~~EEE~~|1.8<br>~~EEE~~|2.2<br>~~EEE~~|V<br>~~EEE~~|VDS= VGS,ID= 250μA<br>~~EEE~~<br>~~=~~|
|Static Drain-Source On-Resistance<br>~~EEE~~|RDS (ON)<br>~~EEE~~|-<br>~~EEE~~|35<br>54<br>~~EEE~~|60<br>100<br>~~EEE~~|mΩ<br>~~EEE~~|VGS= 10V,ID= 3.1A<br>~~EEE~~<br>~~=~~|
|||||||VGS= 4.5V,ID= 2A<br>~~EEE~~<br>~~=~~|
|Forward Transfer Admittance<br>~~EEE~~||Yfs|<br>~~EEE~~|-<br>~~EEE~~|4<br>~~EEE~~|-<br>~~EEE~~|S<br>~~EEE~~|VDS= 5V,ID= 3.1A<br>~~EEE~~<br>~~=~~|
|Diode Forward Voltage|VSD|-|0.8|1|V|VGS= 0V,IS= 1A<br>~~=~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~———ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~ee~~|-<br>~~ee~~|305<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~———~~|Coss<br>~~ee~~|-<br>~~ee~~|40<br>~~ee~~|-<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~ee~~|-<br>~~ee~~|40<br>~~ee~~|-<br>~~ee~~|||
|Gate Resistance<br>~~———~~<br>~~———~~|Rg<br>~~ee~~|-<br>~~ee~~|1.4<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|Ω<br>~~ee~~<br>~~a~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ae~~|
|Total Gate Charge<br>~~——— ~~<br>~~———~~|Qg<br> ~~ee~~|-<br>~~ee~~|4.1<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|nC<br>~~ee~~<br>~~a~~<br>~~ee~~|VDS= 15V,VGS= 4.5V,ID= 3.1A<br>~~ae~~|
|Total Gate Charge<br>~~———~~|Qg|-|9.0<br>~~a~~|-<br>~~a~~||VDS= 15V, VGS= 10V, ID= 3.1A<br>~~ae~~<br>~~ee~~|
|Gate-Source Charge<br>~~———~~|Qgs|-|1.2<br>~~a~~|-<br>~~a~~|||
|Gate-Drain Charge<br>~~———~~<br>~~———~~|Qgd|-|1.5<br>~~a~~|-<br>~~a~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~———~~<br>~~———~~|tD(on)|-|2.6<br>~~a~~|-<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|VGS= 10V, VDS= 15V,<br>RG= 3Ω, RL= 4.7Ω<br>~~ae~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~———~~|tr|-|4.6<br>~~a~~|-<br>~~a~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~———~~|tD(off)|-|13.1|-<br>~~ee~~|||
|Turn-Off Fall Time<br>~~———~~|tf|-|2.5|-<br>~~ee~~|||
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
- 7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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DMN3135LVT Document number: DS35408 Rev. 6 - 2
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**DMN3135LVT**
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10.0 10<br>TA = 150°C<br>VDS= 5.0V<br>VGS=4.0V TA = 125°C<br>8.0 8 TA = 25°C<br>VGS=4.5V<br>TA = 85°C<br>Wh oe a<br>6.0 VGS=3.5V 6<br>4.0 fiecee VGS=10V 4 oY7 TA = -55°C<br>VGS=3.0V<br>2.0 2<br>fo VGS=2.5V<br>0.0 Voy ti 0 Jf<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5<br>VDS, DRAIN -SOURCE VOLTAGE(V) VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>1 0.16<br>VGS= 4.5V<br>0.12<br>TA = 125°C TA = 150°C<br>0.1 ne 0.08<br>TA = 85°C<br>= eee<br>TA = 25°C<br>0.04<br>a Se T A = -55°C<br>0.01 FATE 0 SE<br>><br>0 4 8 12 16 20 0 2 4 6 8 10<br>ID, DRAIN SOURCE CURRENT ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.6 0.10<br>VGS=4.5V<br>ID=5A<br>0.08<br>1.4 OY BERREERE<br>1.2 0.06<br>BnNEy/<5 0.04 REND SOD VGS=10V<br>1 ID=10A<br>reat) Beceer<br>0.02 | |<br>0.8<br>pZannian rT<br>0.6 ALLELE 0 LEEELEL<br>-50 -25 0 25 50 75 100 125 150<br>-50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 °C)125 150 Fig. 6 On-Resistance Variation with TemperatureTJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)Ω )Ω<br>,DRAIN-SOURCE ON-RESISTANCE( , DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R DS(ON)<br>R<br>)Ω<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>**----- End of picture text -----**<br>
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**www.diodes.com**
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DMN3135LVT<br>2.4 10<br>2<br>8<br>Coo) = EEE<br>1.6 TA= 25°C<br>6<br>SS<br>1.2 tt | eS Sea<br>4<br>0.8<br>itt ty SSS<br>2<br>0.4<br>joe EEE<br>0 0<br>-50 TET -25 0 25 tT 50 75 yy 100 125 150 0 A 0.2 0.4 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1000 10000<br>f = 1MHz<br>TA =150°C<br>CISS 1000<br>T A =125°C<br>100<br>100 T A =85°C<br>10<br>COSS<br>C RSS<br>1<br>TA =-55°C TA =25 ° C<br>=e<br>10 0.1 FEET EET TT EE Ty<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE(V)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>10 100<br>Single Pulse<br>RθJA = 157°C/W<br>8 80 R θJA(t) = R θJA * r (t)<br>TJ -TA = P * RθJA(t)<br>6 7 60 Hagae<br>4 40<br>2 apmr 20 NN|!(i<br>0 Amemeee 0 | iii<br>0.00001 0.001 0.1 10 1,000<br>0 2 4 6 8 10<br>t1, Pulse Duration Time (sec)<br>Qg, TOTAL GATE CHARGE (nC) Fig. 12 Single Pulse Maximum Power Dissipation<br>Fig. 11 Gate-Charge Characteristics<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE(V)GS(TH) IS<br>V<br>, LEAKAGE CURRENT (nA)<br>, JUNCTION CAPACITANCE (pF)T IDSS<br>C<br>, GATE-SOURCE VOLTAGE (V) , PEAK TRANSIENT POWER (W)<br>VGS P(pk)<br>**----- End of picture text -----**<br>
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DMN3135LVT
May 2012 © Diodes Incorporated
Document number: DS35408 Rev. 6 - 2
**DMN3135LVT**
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1<br>D = 0.7<br>D = 0.5<br>SG D = 0.3 ssa a afl<br>TA eer NEE D = 0.9 I Hy<br>0.1<br>D = 0.1<br>TH D = 0.05 Fr<br>HH<br>D = 0.02<br>eH Fr<br>0.01<br>D = 0.01<br>D = 0.005 R RθθJAJA = 157 (t) = r(t) °C/W * RθJA<br>Duty Cycle, D = t1/ t2<br>Peete TUITE PTT PITT HT<br>Single Pulse<br>0.001 Se ae at<br>0.00001 twill 0.0001 VTE 0.001 CEI 0.01 UIE 0.1 CTTTIT 1 TT 10 100 il 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
## **Package Outline Dimensions**
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po TSOT26<br>D Dim Min Max Typ<br>_— e1 ee A − 1.00 −<br>A1 0.01 0.10 −<br>A2 0.84 0.90 −<br>T | a D − − 2.90<br>E1 E a E − − 2.80<br>E1 − − 1.60<br>c L2 b 0.30 0.45 −<br>Lee = Se L ' θ aESSE c a 0.12 0.20 −<br>Kf e of 4x θ1 re e − − 0.95<br>6x b a e1 − − 1.90<br>. a L2 L a 0.−30 0 ee .−50 0.25<br>A A2<br>θ 0° 8° 4°<br>| A1 fJEEFEFEB{<-> a ee All Dimθ1 4° ension oe 12° s in mm −<br>fp<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
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C C<br>Hoo Dimensions Value (in mm)<br>C 0.950<br>Y1 X 0.700<br>Y 1.000<br>Y1 3.199<br>Y (6x)<br>U<br>ake<br>X (6x)<br>**----- End of picture text -----**<br>
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DMN3135LVT Document number: DS35408 Rev. 6 - 2
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**DMN3135LVT**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
**www.diodes.com**
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DMN3135LVT Document number: DS35408 Rev. 6 - 2
May 2012 © Diodes Incorporated
Updated at June 9, 2026
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