DMN3032LFDBWQ-7

## **DMN3032LFDBWQ** oO **DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|30V|30mΩ @ VGS= 10V|5.5A|
||42mΩ @ VGS= 4.5V|4.7A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switching—Ensures More Reliable and Robust Application 

- Low On-Resistance—Minimizes Power Losses 

- Low Gate Charge—Minimizes Switching Losses 

- Small Form Factor Low-Profile Package—Increased Power Density 

- Sidewall Plated for Improved Optical Inspection 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMN3032LFDBWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

   - **https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and ideal for use in: 

## **Mechanical Data** 

   - Case: U-DFN2020-6 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Body Control Electronics 

- Power Management Functions 

- Terminals Connections: See Diagram Below 

**==> picture [478 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
 DC-DC Converters   Terminals Connections: See Diagram Below<br> Weight: 0.007 grams (Approximate)<br>U-DFN2020-6 (SWP) (Type B)<br>D1 D2<br>D2<br>G1<br>S1  D2<br>Pin1  D1  G1 G2<br>S2<br>G2<br>D1  S1 S2<br>@ SS ® &<br>Top View  Bottom View  Internal Schematic<br>Ordering Information (Note 4)<br>Part Number Case Packaging<br>DMN3032LFDBWQ-7  U-DFN2020-6 (SWP) (Type B) 3000/Tape & Reel<br>DMN3032LFDBWQ-13 U-DFN2020-6 (SWP) (Type B) 10,000/Tape & Reel<br>**----- End of picture text -----**<br>


Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

|||||||NW = Product Type Marking Code|NW = Product Type Marking Code||||
|---|---|---|---|---|---|---|---|---|---|---|
|||||||YM = Date Code Marking|||||
|||||||Y = Year (ex: H = 2020)|||||
|Date CodeKey<br>**Year**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**Code**<br>G<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>M = Month (ex: 9 = September)<br>~~—ee~~|||||||||||



1 of 7 **www.diodes.com** 

DMN3032LFDBWQ Document number: DS42056 Rev. 2 - 2 

January 2020 © Diodes Incorporated 

**DMN3032LFDBWQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25C<br>TA= +75C|ID|5.5<br>4.4|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|1.7|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|30|A|
|Avalanche Current(Note 7)L = 0.1mH|||IAS|12|A|
|Avalanche Energy (Note 7)L = 0.1mH|||EAS|7.7|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.82|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RϴJA|153|°C/W|
|Total Power Dissipation(Note 6)||PD|1.37|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RϴJA|91|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RϴJC|30||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1.0|μA|VDS= 30V,VGS= 0V|
|Zero Gate Voltage Drain Current TJ= +150°C(Note 9)|IDSS|—|—|100|μA|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1.0<br>~~ee~~|—<br>~~ee~~|2.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|24<br>~~ee~~|30<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 5.8A<br>~~ee~~|
||||30<br>~~ee~~|42<br>~~ee~~||VGS= 4.5V,ID= 4.8A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~<br>~~——~~|VSD<br>~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~——~~<br>~~rrr~~|||||||
|Input Capacitance<br>~~——~~<br>~~rrr~~|Ciss<br>~~rrr~~|—<br>~~rrr~~|500<br>~~rrr~~|—<br>~~rrr~~|pF<br>~~rrr~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~rrr~~|
|Output Capacitance<br>~~——~~<br>~~rrr~~|Coss<br>~~rrr~~|—<br>~~rrr~~|52<br>~~rrr~~|—<br>~~rrr~~|pF<br>~~rrr~~||
|Reverse Transfer Capacitance<br>~~——~~<br>~~rrr~~|Crss<br>~~rrr~~|—<br>~~rrr~~|44<br>~~rrr~~|—<br>~~rrr~~|pF<br>~~rrr~~||
|Gate Resistance<br>~~——~~|Rg|—|2.3|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|5.0|—|nC|VDS= 15V, ID= 5.8A|
|Total Gate Charge(VGS= 10V)|Qg|—|10.6|—|nC||
|Gate-Source Charge|Qgs|—|1.3|—|nC||
|Gate-Drain Charge|Qgd|—|1.8|—|nC||
|Turn-On DelayTime|tD(ON)|—|2.2|—|ns|VDD= 15V, VGS= 10V,<br>RL= 2.6Ω, RG= 3Ω|
|Turn-On Rise Time|tR|—|2.6|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|9.7|—|ns||
|Turn-Off Fall Time|tF|—|2.0|—|ns||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMN3032LFDBWQ Document number: DS42056 Rev. 2 - 2 

January 2020 © Diodes Incorporated 

**DMN3032LFDBWQ** —— 

## DIODES, 

**==> picture [480 x 647] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 VGS = 4.5V 20<br>VGS = 4V 18 V DS  = 5.0V<br>25 ee VGS = 6V<br>16<br>VGS  = 10V<br>J. 14<br>20<br>12<br>15 2 VGS = 3V 10<br>8<br>10 pose V GS  = 2.8V 6 TA = 85 ° C<br>TA = 125°C TA  = 25°C<br>5 = VGS = 2.5V 4 TA = 150°C TA = -55°C<br>2<br>VGS  = 2.2V<br>0 a 0 ae<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.0360.04 TTT TTT 0.9<br>ID = 5.8A<br>VGS = 4.5V 0.6<br>0.032<br>er<br>0.028<br>ett TT VGS = 10V 0.3<br>0.024<br>WERRREREEE<br>ID = 4.8A<br>0.02 ATUL 0<br>0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20<br>I D, DRAIN-SOURCE CURRENT (A)  V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.06 1.8<br>VGS = 10V VGS = 10V<br>0.054<br>4 1.6 ly ID = 5.8A<br>0.048 es ee ,<br>TA = 150°C<br>0.042 TA  = 125°C 1.4 V GS = 4.5V<br>0.036 T A  = 85°C ID = 4.8A<br>0.03 a TA = 25°C 1.2 ty<br>0.024 SS=— Coy<br>0.018 SE TA = -55°C 1 EEEVAnne<br>0.012<br>0.8<br>0.006 —}+——_ BZ 4nnnan<br>0<br>0 rr 5 10 15 20 0.6 LEE<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE (0 25 TT 50 75 100 TT C)125 150<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br> I<br>D<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>D<br>, DRAIN CURRENT (A)<br> I<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMN3032LFDBWQ Document number: DS42056 Rev. 2 - 2 

January 2020 © Diodes Incorporated 

**DMN3032LFDBWQ** [sid 

## DODES 

**==> picture [480 x 646] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.06 3<br>2.7<br>0.05 To REE<br>2.4<br>0.04 fF]ptf VIGSD = 4.8A = 4.5V paS 2.1 eeTEEPE<br>1.8<br>0.03 on a VGS = 10V 1.5 || | | | | I D dt  = 1mA dt<br>ID = 5.8A ID = 250µA<br>1.2<br>0.02 CeerryT , | CSS<br>en 0.9 Toe TCe Ss<br>0.6<br>TELL TEE<br>0.01<br>0.3<br>0 tL EELELL 0 eeTCECELEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junct onFigure 8 Gate Threshold Variation vs. Amb i ent  T emperatureemperature<br>30 1000<br>f=1MHz<br>27 eee |e —————<br>24 ee i — C iss<br>21<br>fff tt<br>ny nan<br>18<br>15 100<br>12 fh TA  = 125°C T A  = 85°C Co NR Coss<br>TA = 25°C<br>9 afl TA  = 150°C TA = -55°C C rss Sd<br>6<br>fe ———<br>3 e/a ete<br>0 OD 10 |tttyy<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 100 R DS(on)<br>Limited<br>Pt TNR NEEET<br>8<br>10<br>PW = 100µs<br>6 V DS  = 15V —NAST DC<br>ID = 5.8A 1 P W  = 10s<br>PW = 1s<br>4 P W  = 100ms<br>[| PW = 10ms INRA UKBaal<br>0.1 P W  = 1ms<br>2 TT TJ(max)  = 150°C VASES<br>T C  = 25°C<br>V GS  = 10V<br>Single Pulse<br>0 0.01 at DUT on 1*MRP Board a<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) V-VDSDS, DRAIN-SOURCE VOLTA DRAIN-SOURCE VOLTA GE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>, SOURCE CURRENT (A)<br>S<br>I<br>ENT (A)<br> UR<br>A<br>D<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>D<br>ENT (A)<br>R<br>UR<br>C<br>IN<br>A<br>, DR<br>I -<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th)<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMN3032LFDBWQ Document number: DS42056 Rev. 2 - 2 

January 2020 

© Diodes Incorporated 

**DMN3032LFDBWQ** 

**==> picture [428 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.9<br>D = 0.7<br>SPORMICHELL D = 0.5 ETTasa asaoempr eT TTT ATTa<br>D = 0.3<br>Ecullt TEUIIE TAIN TI eeear ETI PATTIEaTTI UTE TTAnmeUEe tt EemanTA<br>0.1 0Pe D = 0.1 MAE ALIENoe<br>Saari D = 0.05 eee ee See fee at ti em em<br>SF fa anna ART anET Ene TE<br>a co<br>D = 0.02<br>SUT GR Ge eeee<br>DE WSA<br>0.01 AVLon D = 0.01 eA TIE ESHER SI PERE SIE UT AREE EEE<br>SS<br>oc D = 0.005<br>TTTTT TU TA PP RJA PETE (t) = r(t) * RJA<br>D = Single Pulse RJA = 154°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>1E-06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMN3032LFDBWQ Document number: DS42056 Rev. 2 - 2 

January 2020 © Diodes Incorporated 

**DMN3032LFDBWQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (SWP) (Type B)** 

**==> picture [512 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
U-DFN2020-6 (SWP)<br>(Type B)<br>A1 Dim  Min  Max  Typ<br>A A3 A  0.55 0.65 0.60<br>Seating Plane A1  0.00 0.05 0.03<br>A3  --  --  0.127<br>b  0.23 0.33 0.28<br>oh oe D  1.95 2.05 2.00<br>D<br>e Cut-off end of D2  0.60 0.80 0.70<br>non-functional E  1.95 2.05 2.00<br>bonding wire E2  0.88 1.08 0.98<br>7 k === e 0.65BSC<br>k  0.195BSC<br>D2 k1 k1  0.32BSC<br>E E2 L  0.28 0.38 0.33<br>z  0.21BSC<br>All Dimensions in mm<br>L(6x)<br>z<br>rom b<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>**----- End of picture text -----**<br>


## **U-DFN2020-6 (SWP) (Type B)** 

**==> picture [131 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
X3<br>X2<br>C<br>X1<br>Y2 Y1<br>fae<br>G 1 Y<br>Envi G X<br>**----- End of picture text -----**<br>


**==> picture [88 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G  0.160<br>G1  0.145<br>X  0.380<br>X1  0.700<br>X2  1.680<br>X3  1.720<br>Y  0.515<br>Y1  0.980<br>Y2  2.300<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMN3032LFDBWQ Document number: DS42056 Rev. 2 - 2 

January 2020 © Diodes Incorporated 

**DMN3032LFDBWQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN3032LFDBWQ Document number: DS42056 Rev. 2 - 2 

January 2020 © Diodes Incorporated