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DMN3032LFDBQ-7
Dual MOSFET, N Channel, 30 V, 30 V, 6.2 A, 6.2 A, 0.03 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: UDFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.7W
- Power Dissipation P Channel: 1.7W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 6.2A
- Continuous Drain Current Id P Channel: 6.2A
- Drain Source On State Resistance N Channel: 0.03ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.2 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**DMN3032LFDBQ** CCt~«~*d **DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---| |||| |**V(BR)DSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**| |30V|30mΩ @ VGS= 10V|6.2A| ||42mΩ @ VGS= 4.5V|5.2A| ## **Features and Benefits** - 100% Unclamped Inductive Switching – Ensures More Reliable and Robust Application - Low On-Resistance – Minimizes Power Losses - Low Gate Charge – Minimizes Switching Losses - Small Form Factor Low Profile Package – Increased Power Density - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** - **PPAP Capable (Note 4)** ## **Description and Applications** This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and ideal for use in: ## **Mechanical Data** - Case: U-DFN2020-6 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Body Control Electronics - Power Management Functions - DC-DC Converters - Terminals: Finish NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** - Terminals Connections: See Diagram Below - Weight: 0.0065 grams (Approximate) **==> picture [53 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> U-DFN2020-6<br>**----- End of picture text -----**<br> **==> picture [120 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> S2<br>G2<br>D2<br>D1<br>D1<br>D2<br>G1<br>S1<br>Pin1<br>Bottom View<br>**----- End of picture text -----**<br> **==> picture [200 x 113] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>S1 S2<br>Internal Schematic<br>**----- End of picture text -----**<br> ## **Ordering Information** (Notes 4 & 5) |**Ordering Informationg Information Information** (Notes 4 & 5)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMN3032LFDBQ-7|U-DFN2020-6|3,000/Tape & Reel| |DMN3032LFDBQ-13|U-DFN2020-6|10,000/Tape &Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [526 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> N5 = Product Type Marking Code<br>N5 YM = Date Code Marking<br>Y = Year (ex: C = 2015)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2015 2016 2017 2018 2019 2020 2021<br>———————_———— Code C D E F G H I<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>——————— Code 1 2 3 4 5 6 7 8 9 O N D<br>DMN3032LFDBQ 1 of 7 October 2015<br>Document number: DS37981 Rev. 2 - 2 www.diodes.com © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br> **DMN3032LFDBQ** ## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||| |---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 7) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +75°C|ID|6.2<br>5.0|A| |Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|2|A| |Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|25|A| |Avalanche Current(Note 8)L = 0.1mH|||IAS|12|A| |Avalanche Energy (Note 8)L = 0.1mH|||EAS|10|mJ| ## **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Total Power Dissipation(Note 6)||PD|1.0|W| |Thermal Resistance, Junction to Ambient (Note 6)|Steady state|RJA|127|°C/W| ||t<10s||75|| |Total Power Dissipation(Note 7)||PD|1.7|W| |Thermal Resistance, Junction to Ambient (Note 7)|Steadystate|RJA|72|°C/W| ||t<10s||43|| |Thermal Resistance, Junction to Case(Note 7)||RJC|9|| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C| ## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |||||||| |---|---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 9) **||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250μA<br>~~ee~~| |Zero Gate Voltage Drain Current TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|1.0<br>~~ee~~|μA<br>~~ee~~|VDS= 30V,VGS= 0V<br>~~ee~~| |Zero Gate Voltage Drain Current TJ= +150°C(Note 10)<br>~~ee~~|IDSS<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|100<br>~~ee~~|μA<br>~~ee~~|VDS= 30V,VGS= 0V<br>~~ee~~| |Gate-Source Leakage|IGSS|-|-|±100|nA|VGS= ±20V,VDS= 0V| |**ON CHARACTERISTICS(Note 9) **<br>~~—————————~~||||||| |Gate Threshold Voltage|VGS(TH)|1.0|1.5<br>~~—————————~~|2.0<br>~~—————————~~|V<br>~~—————————~~|VDS= VGS,ID= 250μA<br>~~—————————~~| |Static Drain-Source On-Resistance|RDS(ON)|-<br>~~GO~~|25<br>~~—————————~~|30<br>~~—————————~~|mΩ<br>~~—————————~~<br>~~QO~~|VGS= 10V,ID= 5.8A<br>~~—————————~~| ||||30<br>~~—————————~~<br>~~GO~~|42<br>~~—————————~~<br>~~QO~~||VGS= 4.5V,ID= 4.8A<br>~~—————————~~<br>~~(~~| |Diode Forward Voltage<br>~~GO~~|VSD<br>~~GO~~|-<br>~~GO~~<br>~~GO~~|0.75<br>~~—————————~~<br>~~GO~~<br>~~GO~~|1.2<br>~~—————————~~<br>~~GO~~<br>~~QO~~|V<br>~~—————————~~<br>~~GO~~<br>~~QO~~|VGS= 0V,IS= 1A<br>~~—————————~~<br>~~GO~~<br>~~(~~| |**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~GO~~<br>~~GO~~<br>~~QO (~~<br>~~————————~~<br>~~ne~~||||||| |Input Capacitance<br>~~————————~~|Ciss|-|500|-<br>~~ne~~|pF<br>~~ne~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~ne~~| |Output Capacitance<br>~~————————~~|Coss|-|52|-<br>~~ne~~|pF<br>~~ne~~|| |Reverse Transfer Capacitance<br>~~————————~~|Crss|-|44|-<br>~~ne~~|pF<br>~~ne~~|| |Gate Resistance<br>~~————————~~|Rg|-|2.3|-<br>~~ne~~|Ω<br>~~ne~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ne~~| |Total Gate Charge(VGS= 4.5V)|Qg|-|5.0|-|nC|VDS= 15V, ID= 5.8A| |Total Gate Charge(VGS= 10V)|Qg|-|10.6|-|nC|| |Gate-Source Charge|Qgs|-|1.3|-|nC|| |Gate-Drain Charge|Qgd|-|1.8|-|nC|| |Turn-On DelayTime|tD(ON)|-|2.2|-|ns|VDD= 15V, VGS= 10V,<br>RL= 2.6Ω, RG= 3Ω| |Turn-On Rise Time|tR|-|2.6|-|ns|| |Turn-Off DelayTime|tD(OFF)|-|9.7|-|ns|| |Turn-Off Fall Time|tF|-|2.0|-|ns|| - Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 **www.diodes.com** DMN3032LFDBQ Document number: DS37981 Rev. 2 - 2 October 2015 © Diodes Incorporated **DMN3032LFDBQ** **==> picture [500 x 672] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 20<br>VGS=4.0V 18 VDS=5V<br>25.0<br>VGS=10.0V 16<br>RET VGS=3.5V = 14 F E<br>20.0<br>f < VGS=4.5V 12 CEEEEEEEEH<br>15.0 VGS=3.0V 10<br>F o-—- 8 «F TA=150 ℃ E<br>10.0 6 TA=125 ℃<br>[ oa - fo<br>5.0 VGS=2.5V 4 TA=85 ℃ TA=25 ℃<br>2<br>i ——— VGS=2.0V - 0 an? sf TA=-55 ℃ ae<br>0.0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.05 0.1<br>ID=3.6A<br>0.04 0.08<br>BREE Trot iet<br>VGS=4.5V<br>0.03 0.06<br>Eapeee nes ER Rnee<br>0.02 VGS=10V 0.04<br>0.01 ae PACT 0.02 ALE ID=2.8A LT ET<br>0 0<br>PTTL EE ETTLEE onneeenPETE<br>1 3 5 7 9 11 13 15 17 19 21 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.05<br>1.8<br>0.045 VGS= 10V GS= 10V = 10V<br>150 ℃<br>0.04 1.6 VGS=10V, ID=5.0A<br>0.035 ae 125 ℃ 1.4 HH yy<br>A RS E Seana 4<br>0.03 85 ℃<br>1.2<br>0.025<br>25 ℃ VGS=4.5V, ID=3.0A<br>e e e<br>0.02<br>1<br>0.015 -55 ℃<br>0.8<br>0.01 P| | ei | | a<br>0.005 CCE 0.6 eT TTT Ty fd<br>0 2 4 6 8 10 12 14 16 18 20<br>-50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) D, DRAIN CURRENT (A) , DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>) )<br>(W (W<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>)<br>W<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br> **==> picture [227 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> 0.05<br>VGS= 10V GS= 10V = 10V<br>0.045<br>150 ℃<br>0.04<br>0.035 ae 125 ℃<br>A RS E<br>0.03 85 ℃<br>0.025<br>25 ℃<br>e e e<br>0.02<br>0.015 -55 ℃<br>0.01 P| | ei | |<br>0.005<br>CCE<br>0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN CURRENT (A) D, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current<br>and Temperature<br>)<br>W<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 3 of 7 **www.diodes.com** DMN3032LFDBQ Document number: DS37981 Rev. 2 - 2 October 2015 © Diodes Incorporated **DMN3032LFDBQ** **==> picture [492 x 669] intentionally omitted <==** **----- Start of picture text -----**<br> 0.08 0.07 Pt EE | 1.8 2 PttT<br>0.06 Pt | tt tt 1.6 Ft | |ttyey<br>0.05 ID=1mA<br>1.4<br>ptt VGS ttt =4.5V, ID=3.0A tte Se<br>0.04<br>aa a 1.2 SS<br>0.03 ID=250mA<br>eS 1<br>0.02 VGS=10V, ID=5.0A<br>0.8<br>0.01<br>ti =©6coe<br>0 Ft | ttt | yt 0.6 Pt tT | tT Ty yt<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs Junction<br>Temperature<br>20 1000<br>f=1MHz<br>18<br>yy e e<br>16 Ciss<br>14 VGS=0V, TA=150 ℃<br>ees || ——S ==<br>12<br>10 VGS=0V, TA=125 ℃ 100<br>ee ||| Nae Coss |__|<br>8 VGS=0V, TA=85 ℃<br>6<br>4 VGS=0V, TA=25 ℃ Crss<br>2 VGS=0V,<br>TA=-55 ℃<br>10<br>0<br>Dy 0 pt 5 10 tt 15 [tt] 20 25 30<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 10000<br>TA=150 ℃<br>8 Ty 1000 <_ -<br>TA=125 ℃<br>7a ee<br>6 100<br>== =<br>CO ——— —— TA=85 ℃<br>4 VDS=15V, ID=3.6A 10<br>TA=25 ℃<br>2 1<br>pf = =<br>0 0.1<br>Ji i iit ===<br>0 2 4 6 8 10 12 0 5 10 15 20 25 30<br>Qg,TOTAL GATE CHARGE (nC) VDS, Drain-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. Typical Drain-Source Leakge Current vs.<br>Voltage<br>)<br>W , GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, GATE-SOURCE VOLTAGE (V) , LEAKAGE CURRENT (nA)<br>VGS IDSS<br>**----- End of picture text -----**<br> 4 of 7 **www.diodes.com** DMN3032LFDBQ Document number: DS37981 Rev. 2 - 2 October 2015 © Diodes Incorporated **DMN3032LFDBQ** | **==> picture [296 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>RDS(ON) Limited ee me<br>a=eePo———---ee PW=100µs UL<br>10 eeee ee 0 aN> alll<br>eee<br>aa...eeeS Se, Ne ee, eee eee<br>} aN ANAIN NE EE N P| tT<br>DC<br>1 peePo SERORGKRAY NNOOMel<br>rr— S PW=10s eeeseeeeee<br>a ee ee ee e,.* ee .~@ SS). (ee Nee ee<br>| ee | PW=1s SANS ZONA; | tT<br>| PW=100ms LNAMal<br>0.1 TTJ(Max)A=25=150 ℃ ℃ PW=10ms aySSly, a EE<br>re | 2, Seanee<br>Single Pulse PW=1ms<br>DUT on 1*MRP board SN P| tT<br>VGS=4.5V<br>0.01 Pt TTTsani<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [436 x 257] intentionally omitted <==** **----- Start of picture text -----**<br> 1 S SS SSS SSS FE S S SSS awa<br>8 —<br>Ne mr tT<br>D=0.5 D=0.5 D=0.9<br>a ee enema<br>ee cal a<br>D=0.3 D=0.3 D=0.7<br>TT TNG eae EE | |<br>0.1 ELi NEEMTE TT<br>D=0.1 "eeSe<br>P As [A] /”,Nig e e 0 O O OO eee<br>|<br>D=0.05 In<br>ee [AP] Cm tT CT<br>LO EIT TEE ET<br>ec A<br>D=0.02 D=0.02<br>0.01 eeeYl ae a Te a<br>D=0.01 D=0.01 CO Ar IAee<br>arg[er | ATiire eeetT T PTTeetT PUP |<br>et COAT i aa)<br>D=0.005<br>PT A TT RE Spd<br>D=Single Pulse a RRDuty Cycle, D=t1 / t2 RRDuty Cycle, D=t1 / t2 θJAθJAθJAθJA(t)=r(t) * R=124(t)=r(t) * R=1204 ℃℃ /W /W θJAθJA ll<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 14. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 5 of 7 **www.diodes.com** DMN3032LFDBQ Document number: DS37981 Rev. 2 - 2 October 2015 © Diodes Incorporated **DMN3032LFDBQ** ## **Package Outline Dimensions** **==> picture [417 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.<br>A3<br>A1<br>A<br>Seating Plane U-DFN2020-6<br>Type B<br>Sal Dim Min Max Typ<br>D<br>A 0.545 0.605 0.575<br>A1 0.00 0.05 0.02<br>D2 D2<br>A3 - - 0.13<br>b 0.20 0.30 0.25<br>D 1.95 2.075 2.00<br>D2 0.50 0.70 0.60<br>e - - 0.65<br>z1 E 1.95 2.075 2.00<br>E2 0.90 1.10 1.00<br>E z1 E2 k - - 0.45<br>k L 0.25 0.35 0.30<br>z - - 0.225<br>z1 - - 0.15<br>L All Dimensions in mm<br>e<br>z<br>b<br>(Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. **==> picture [367 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> X2<br>C<br>f+<br>Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G 0.150<br>G1 0.450<br>X 0.350<br>X1(2x)<br>X1 0.600<br>Y2 Y1(2x ) G X2 1.650<br>Y 0.500<br>G1<br>Y1 1.000<br>Rae Y2 2.300<br>Y<br>“t nus X =<br>6 of 7<br>www.diodes.com<br>**----- End of picture text -----**<br> DMN3032LFDBQ Document number: DS37981 Rev. 2 - 2 October 2015 © Diodes Incorporated **DMN3032LFDBQ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. - B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated **www.diodes.com** 7 of 7 **www.diodes.com** DMN3032LFDBQ Document number: DS37981 Rev. 2 - 2 October 2015 © Diodes Incorporated
Updated at June 9, 2026
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