DMN3024LSD-13

**A Product Line of Diodes Incorporated** 

**DMN3024LSD** 

## **30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

Please click here to visit our online spice models database. Please click here to visit our online spice models database. 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = 25**°**C**|
|30V|24mΩ@ VGS= 10V|7.2A|
||36mΩ@ VGS= 4.5V|5.8A|



## **Features and Benefits** 

- Low on-resistance 

- Fast switching speed 

- “Green” component and RoHS compliant (Note 1) 

## **Mechanical Data** 

- Case: SO-8 

## **Description and Applications** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Motor control 

   - Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0 (Note 1) 

   - Moisture Sensitivity:  Level 1 per J-STD-020D 

   - Terminals Connections: See Diagram 

   - Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.074 grams (approximate) 

- Backlighting 

- DC-DC Converters 

- Power management functions 

**==> picture [391 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
D1 D2<br>S1 | || Ltt D1<br>= G1 | tt || D1<br>S2 |_| | | D2 G1 G2<br>&<br>G2 mn TT D2<br>S1 S2<br>TOP VIEW Top view<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 1) 

|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|DMN3024LSD-13|N3024LD|13|12|2,500|



Note: 1.   Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website.  For packaging details, go to our website. 

## **Marking Information** 

**N3024LD YY WW** 

> N3024LD = Product Type Marking Code        = Manufacturer’s Marking ott YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 

1 of 8 **www.diodes.com** 

DMN3024LSD Document Revision: 3 

July 2009 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **DMN3024LSD** ~~—_—~~ 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol **|**Value**|**Unit**|
|Drain-Source voltage|||VDSS|30|V|
|Gate-Source voltage|||VGS|±20|V|
|Continuous Drain current|VGS= 10V|(Notes 3 & 5)|ID|7.2|A|
|||TA= 70°C(Notes 3 & 5)||5.8||
|||(Notes2& 5)||5.7||
|||(Notes2& 6)||6.8||
|Pulsed Drain current|VGS= 10V|(Notes 4 & 5)|IDM|34|A|
|Continuous Source current(Bodydiode)||(Notes 3 & 5)|IS|3.3|A|
|Pulsed Source current(Bodydiode)||(Notes 4 & 5)|ISM|34|A|



**Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Power dissipation<br>Linear derating factor|(Notes 2 & 5)|PD|1.3<br>10.0|W<br>mW/°C|
||(Notes 2 & 6)||1.8<br>14.3||
||(Notes 3 & 5)||2.0<br>15.9||
|Thermal Resistance, Junction to Ambient|(Notes2& 5)|RθJA|100|°C/W|
||(Notes2& 6)||70||
||(Notes 3 & 5)||63||
|Thermal Resistance,Junction to Lead|(Notes 5 & 7)|RθJL|53|°C/W|
|Operatingand storage temperature range||TJ,TSTG|-55 to 150|°C|



Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

3. Same as note (2), except the device is measured at t ≤ 10 sec. 

4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs.  The pulse current is limited by the maximum junction temperature. 

5. For a dual device with one active die. 

6. For a device with two active die running at equal power. 

7. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition. 

2 of 8 **www.diodes.com** 

DMN3024LSD Document Revision: 3 

July 2009 © Diodes Incorporated 

**A Product Line of Diodes Incorporated DMN3024LSD** _ ~~lZETEX~~ 

## **Thermal Characteristics** 

**==> picture [374 x 301] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 2.0<br>RDS(on) Limited —p= ae SE. “SEE eee 1.8 \<br>10 | eesagt — a ~| 1.6 a<br>p—___| 7 SA SS 1.4 N<br>1 SSSeeee ee a > ea 1.2 SN| \ Two active die<br>100m — DC enok 1s A 1.0 eea<br>100ms 0.8<br>SS—— SEee PNK~<br>10m Single Pulse 10ms area 0.6 One active die NONE<br>1m One active dieTamb=25°C ——a— a 1ms = 100µs A_ 0.40.2 PoaaRONANANAKA<br>———— = 0.0 eeea See<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>110<br>10090 1||: One active dieTamb=25 ° C TlCoroeeaTIO etTITSa A 100 INTIMEOhhhAAIPST ™ ooATT ATTT TT Sin Tamb gle Pulse =25°C HHll |<br>80 One active die<br>70 oon onoe oT a it<br>60 D=0.5<br>pn SH eat FE HESS EH<br>50 SerrePT TIT TTctl”TT alll Agent ‘ MtTTett 10 FINESS LeCN edCUM TCITI CE<br>40 Ht He ON<br>30 D=0.2 Single Pulse<br>Serie a t Settee mati Set ice Stit eet at<br>20 ae D=0.05 Seeeeneeeeeened|<br>10 eee D=0.1 1 aa ie hii eee<br>0 Lttee | Letttill| | | eeirineTTT | S SESHanM emesisaUN tessATT SeesTCSeetttmemetiitiaemetitrtm<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## 

3 of 8 **www.diodes.com** 

DMN3024LSD Document Revision: 3 

July 2009 © Diodes Incorporated 

**A Product Line of Diodes Incorporated DMN3024LSD** [ 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>|**Min**<br>~~——————~~|**Typ**<br>~~——————~~|**Max**<br>~~——————~~|**Unit**<br>~~——————~~|**Test Condition**<br>~~——————~~|
|**OFF CHARACTERISTICS**<br>~~ee——————~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>|30<br>~~——————~~|⎯<br>~~——————~~|⎯<br>~~——————~~|V<br>~~——————~~|ID= 250μA, VGS= 0V<br>~~——————~~|
|Zero Gate Voltage Drain Current<br>~~ee ~~<br>~~BE~~|IDSS<br> <br>~~BE~~|⎯<br> ~~——————~~<br>~~BE~~|⎯<br>~~——————~~<br>~~BE~~|0.5<br>~~——————~~<br>~~BE~~|μA<br>~~——————~~<br>~~BE~~|VDS= 30V, VGS= 0V<br>~~——————~~<br>~~BE~~|
|Gate-Source Leakage<br>~~BE~~|IGSS<br>~~BE~~|⎯<br>~~BE~~|⎯<br>~~BE~~|±100<br>~~BE~~|nA<br>~~BE~~|VGS=±20V, VDS= 0V<br>~~BE~~|
|**ON CHARACTERISTICS**<br>~~GOOC~~|||||||
|Gate Threshold Voltage<br>~~Ge~~|VGS(th)<br>~~Ge~~|1.0<br>~~Ge~~<br>~~GO~~|⎯<br>~~Ge~~<br>~~GO~~|3.0<br>~~Ge~~<br>~~OC~~|V<br>~~Ge~~<br>~~OC~~|ID= 250μA, VDS= VGS<br>~~Ge~~<br>~~OC~~|
|Static Drain-Source On-Resistance (Note 8)<br>~~ee~~|RDS (ON)<br>~~ee~~|⎯<br>~~GO~~<br>~~ee~~|⎯<br>~~GO ~~<br>~~ee~~|0.024<br> ~~OC~~<br>~~ee~~|Ω<br>~~OC~~<br>~~ee~~|VGS= 10V, ID= 7.0A<br>~~OC~~<br>~~ee~~|
|||||0.036<br>~~ee~~||VGS= 4.5V, ID= 6.0A<br>~~ee~~|
|Forward Transconductance (Notes 8 & 9)<br>~~EE~~|gfs<br>~~EE~~|⎯<br>~~EE~~|16.5<br>~~EE~~|⎯<br>~~EE~~|S<br>~~EE~~|VDS= 15V, ID= 7.1A<br>~~EE~~|
|Diode Forward Voltage (Note 8)<br>~~EE~~|VSD<br>~~EE~~|⎯<br>~~EE~~|0.82<br>~~EE~~|1.2<br>~~EE~~|V<br>~~EE~~|IS= 1.7A, VGS= 0V<br>~~EE~~|
|Reverse recovery time (Note 9)<br>~~EE~~|trr<br>~~EE~~|~~EE~~|12<br>~~EE~~|⎯<br>~~EE~~|ns<br>~~EE~~|IS= 2.2A, di/dt= 100A/μs<br>~~EE~~|
|Reverse recovery charge (Note 9)<br>~~EE~~|Qrr<br>~~EE~~|⎯<br>~~EE~~|4.8<br>~~EE~~|⎯<br>~~EE~~|nC<br>~~EE~~||
|**DYNAMIC CHARACTERISTICS(Note 9)**|||||||
|Input Capacitance<br>~~EE~~|Ciss<br>~~EE~~|⎯<br>~~EE~~|608<br>~~EE~~|⎯<br>~~EE~~|pF<br>~~EE~~|VDS= 15V, VGS= 0V<br>f= 1MHz<br>~~EE~~|
|Output Capacitance<br>~~EE~~|Coss<br>~~EE~~|⎯<br>~~EE~~|132<br>~~EE~~|⎯<br>~~EE~~|pF<br>~~EE~~||
|Reverse Transfer Capacitance<br>~~EE~~|Crss<br>~~EE~~|⎯<br>~~EE~~|71<br>~~EE~~|⎯<br>~~EE~~|pF<br>~~EE~~||
|Total Gate Charge<br>~~rep~~|Qg<br>~~rep~~|⎯<br>~~rep~~|6.3<br>~~rep~~|⎯<br>~~rep~~|nC<br>~~rep~~|VDS= 15V, VGS= 4.5V<br>ID= 7A<br>~~rep~~|
|Total Gate Charge<br>~~rep~~<br>~~eee~~|Qg<br>~~rep~~<br>~~eee~~|⎯<br>~~rep~~<br>~~eee~~|12.9<br>~~rep~~<br>~~eee~~|⎯<br>~~rep~~<br>~~eee~~|nC<br>~~rep~~<br>~~eee~~|VDS= 15V, VGS= 10V<br>ID= 7A<br>~~rep~~<br>~~eee~~<br>~~ee~~|
|Gate-Source Charge<br>~~eee~~|Qgs<br>~~eee~~|⎯<br>~~eee~~|2.5<br>~~eee~~|⎯<br>~~eee~~|nC<br>~~eee~~||
|Gate-Drain Charge<br>~~eee~~<br>~~———_—~~|Qgd<br>~~eee~~<br>~~———_—~~|⎯<br>~~eee~~|2.5<br>~~eee~~|⎯<br>~~eee~~<br>~~ee~~|nC<br>~~eee~~<br>~~ee~~||
|Turn-On Delay Time (Note 10)<br>~~eee~~<br>~~———_—~~|tD(on)<br>~~eee~~<br>~~———_—~~|⎯<br>~~eee~~|2.9<br>~~eee~~|⎯<br>~~eee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~|VDD= 15V, VGS= 10V<br>ID= 1A, RG≅6.0Ω<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time (Note 10)<br>~~———_—~~|tr<br>~~———_—~~|⎯|3.3|⎯<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time (Note 10)<br>~~———_—~~|tD(off)<br>~~———_—~~|⎯|16|⎯<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time (Note 10)<br>~~———_—~~|tf<br>~~———_—~~|⎯|8|⎯<br>~~ee~~|ns<br>~~ee~~||



10. Switching characteristics are independent of operating junction temperatures. 

4 of 8 **www.diodes.com** 

DMN3024LSD Document Revision: 3 

July 2009 © Diodes Incorporated 

**A Product Line of Diodes Incorporated DMN3024LSD** 

## **Typical Characteristics** 

**==> picture [398 x 468] intentionally omitted <==**

**----- Start of picture text -----**<br>
ee 10V eee 5V pe T = 150°C 10V 4V V GS<br>4V<br>10 10 3.5V<br>3.5V 3V<br>2.5V<br>1 3V 1<br>2V<br>0.1<br>0.1<br>2.5V<br>— =i<br>mor T = 25°C Cee VGS 0.01 a 1.5V<br>0.01<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>10 VDS = 10V V GS  = 10V<br>PTE 1.4 —— I D  = 7A —- R<br>DS(on)<br>1.2<br>T = 150°C<br>1 rn 1.0<br>po An A 0.8 V<br>a L————™f ~N GS(th)<br>ey [Ae,] ff T = 25°C 0.6 ee VGS = VDS<br>I D  = 250uA<br>0.1 |Pfff a 0.4 ——EJ a<br>2 3 4 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>1000<br>== 2.5V ————— 10 eS<br>Poot T = 25°C VGS ————— ee<br>100<br>T = 150°C<br>1<br>3V<br>10 Tr nT ——<br>3.5V<br>0.1 T = 25°C<br>1<br>4V<br>Coe er all eee ee<br>0.01<br>0.1<br>4.5V<br>10V Vgs = -3V<br>0.01 1E-3<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>  Reverse Drain Current (A)<br> Drain-Source On-Resistance (W)DS(on) ISD<br>R<br>**----- End of picture text -----**<br>


5 of 8 **www.diodes.com** 

DMN3024LSD Document Revision: 3 

July 2009 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DMN3024LSD** 

## **Typical Characteristics - continued** 

**==> picture [391 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
900 10<br>800 K++} +} ++ + H+ VGS = 0V 9 I D  = 7A PEELE EEE EEE Ay<br>700 f = 1MHz 8<br>CoPRee ee Fe EEEECEECILE ECESf<br>600 Petit oS 7 POET<br>500 Sooo C ISS A TtoesPr 6 PCE|<br>400 C OSS 5<br>300200 aSaaSoeSOP| | |SyAALSTTee C RSS TTT Tt 432 ERTSPIAL v, oo ELLE/ Wa VDS = 15V awaa<br>100 1<br>a VLE<br>0 PE} + 0 VEE<br>1 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)   Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

**==> picture [133 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
Q G<br>eee. ee<br>V G Q GS Q GD<br>|<br>Charge<br>——<br>**----- End of picture text -----**<br>


**==> picture [158 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current<br>regulator<br>pe I<br>12V 50k Same as<br>D.U.T<br>|<br>eS Oe|<br>V DS<br>| 0.2uF oi IG !<br>D.U.T<br>| | ID<br>V GS<br>**----- End of picture text -----**<br>


## **Basic gate charge waveform** 

## **Gate charge test circuit** 

**==> picture [466 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
V DS<br>90% R D<br>I I<br>| I V GS V DS<br>\/ \ / f R G VDD<br>10% A I |<br>V GS | NK l Pulse width < 1yS<br>\¢>ie—>! td(on) tr jt t d(off) 1«—_> tr | Duty factor 0.1%<br>|__| t(on) |< t(on)<br>**----- End of picture text -----**<br>


## **Switching time waveforms** 

## **Switching time test circuit** 

6 of 8 **www.diodes.com** 

DMN3024LSD Document Revision: 3 

July 2009 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **DMN3024LSD** ~~Cd~~ 

## **Package Outline Dimensions** 

**==> picture [8 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
°<br>h x 45<br>**----- End of picture text -----**<br>


|**DIM**<br>~~ee~~<br>~~I~~|**Inches**<br>~~ee~~<br>~~I~~|**Inches**<br>~~ee~~<br>~~I~~|**Millimeters**<br>~~ee~~<br>~~ee~~<br>~~I~~|**Millimeters**<br>~~ee~~<br>~~ee~~<br>~~I~~|**DIM**<br>~~ee~~<br>~~ee~~|**DIM**<br>**Inches**<br>**Min.**<br>**Max.**<br>~~ee~~<br>~~ee~~|**DIM**<br>**Inches**<br>**Min.**<br>**Max.**<br>~~ee~~<br>~~ee~~|**Millimeters**<br>~~ee~~<br>~~ee~~|**Millimeters**<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|---|---|---|
||**Min.**<br>~~ee~~<br>~~I~~|**Max.**<br>~~ee~~<br>~~I~~|**Min.**<br>~~ee~~<br>~~I~~|**Max.**<br>~~ee~~<br>~~ee~~|||**Max.**<br>~~ee~~<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|
|A<br>~~ee~~<br>~~I~~|0.053<br>~~ee~~<br>~~I~~|0.069<br>~~ee~~<br>~~I~~|1.35<br>~~ee~~<br>~~I~~|1.75<br>~~ee~~<br>~~ee~~|e<br>~~ee~~<br>~~ee~~|0.050 BSC<br>~~ee~~<br>~~ee~~||1.27 BSC<br>~~ee~~<br>~~ee~~||
|A1<br>~~I~~<br>~~Pa~~|0.004<br>~~I~~<br>|0.010<br>~~I~~<br>|0.10<br>~~I~~<br>|0.25<br>~~ee~~<br>|b<br>~~ee~~<br>|0.013<br>~~ee~~<br>~~OO~~<br>|0.020<br>~~ee~~<br>~~OO~~<br>|0.33<br>~~ee~~<br>|0.51<br>~~ee~~<br>|
|D<br>~~I~~<br>~~a OO~~<br>~~Pa~~|0.189<br>~~I~~<br>~~OO~~<br>|0.197<br>~~I~~<br>~~OO~~<br>|4.80<br>~~I~~<br>~~OO~~<br>|5.00<br>~~ee~~<br>~~OO~~<br>|c<br>~~ee ~~<br>~~OO~~<br>|0.008<br> ~~ee~~<br>~~OO~~<br>~~OO~~<br>|0.010<br>~~ee ~~<br>~~OO~~<br>~~OO~~<br>|0.19<br> ~~ee~~<br>~~OO~~<br>|0.25<br>~~ee~~<br>~~OO~~<br>|
|H<br>~~a OO~~<br>~~Pa OO~~<br>~~Fs~~<br>~~Fa~~|0.228<br>~~OO~~<br>~~OO~~<br>~~A~~|0.244<br>~~OO~~<br>~~OO~~|5.80<br>~~OO~~<br>~~OO~~|6.20<br>~~OO~~<br>~~OO~~|θ<br>~~OO~~<br>~~OO~~|0°<br>~~OO~~<br>~~OO~~<br>~~OO~~|8°<br>~~OO~~<br>~~OO~~<br>~~OO~~|0°<br>~~OO~~<br>~~OO~~|8°<br>~~OO~~<br>~~OO~~|
|E<br>~~Pa OO~~<br>~~Fs~~<br>~~Fa~~|0.150<br>~~OO~~<br>~~A~~|0.157<br>~~OO~~|3.80<br>~~OO~~|4.00<br>~~OO~~|h<br>~~OO~~|0.010<br>~~OO~~<br>~~OO~~|0.020<br>~~OO~~<br>~~OO~~|0.25<br>~~OO~~|0.50<br>~~OO~~|
|L<br>~~OO~~<br>~~Fs~~<br>~~Fa~~|0.016<br>~~OO~~<br>~~A~~|0.050<br>~~OO~~|0.40<br>~~OO~~|1.27<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~|



## **Suggested Pad Layout** 

**==> picture [182 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.52<br>0.060<br>(0000 ;<br>7.0 4.0<br>0.275 0.155<br>0.6 1.27<br>0.024 O00 0.050<br>mm<br>inches<br>**----- End of picture text -----**<br>


7 of 8 **www.diodes.com** 

DMN3024LSD Document Revision: 3 

July 2009 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **DMN3024LSD** ~~-—_~~ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2009, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMN3024LSD Document Revision: 3 

July 2009 © Diodes Incorporated