DMN3018SSD-13

**DMN3018SSD** ~~—~~ 

**30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|30V|22mΩ@VGS= 10V|6.7A|
||30mΩ@VGS= 4.5V|5.2A|



## **Features** 

- Low On-Resistance 

- 100% UIS (Avalanche) Rated 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.074 grams (Approximate) 

**==> picture [455 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>SO-8<br>S2  D2<br>cI 8)<br>G2  D2 G<br>S1  D1<br>Lh).“Si G1  | D1 N<br>ESD PROTECTED Gate Protection Diode S<br>Top View  Top View<br>Pin Configuration  Equivalent Circuit per Element<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN3018SSD-13|SO-8|2500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**==> picture [94 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
8 5<br>ononon<br>Jit<br>N3018SD<br>YY WW<br>O<br>1 4<br>PT LILI<br>**----- End of picture text -----**<br>


> N3018SD = Product Type Marking Code . = Manufacturer’s Marking ° YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 

1 of 6 **www.diodes.com** 

DMN3018SSD Document number: DS35583  Rev. 5 - 2 

October 2016 © Diodes Incorporated 

**DMN3018SSD** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

||**Characteristic**<br>**Symbol**|**Characteristic**<br>**Symbol**||**Value**<br>**Unit**|
|---|---|---|---|---|
||Drain-Source Voltage<br>VDSS|||30<br>V|
||Gate-Source Voltage<br>VGSS|||±20<br>V|
|**Thermal Characteristics**|Continuous Drain Current (Note 5) VGS= 10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>t < 10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)<br>IDM<br>Maximum BodyDiode Continuous Current<br>IS<br>Avalanche Current(Note 6)L = 0.1mH<br>IAR<br>Repetitive Avalanche Energy (Note 6)L = 0.1mH<br>EAR<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>Total Power Dissipation(Note 5)<br>Thermal Resistance, Junction to Ambient (Note 5)<br>Steady State<br>t < 10s<br>Thermal Resistance,Junction to Case(Note 5)|6.7<br>5.3<br>A<br>8.7<br>6.9<br>A<br>60<br>A<br>2.0<br>A<br>19<br>A<br>18<br>mJ<br>**Symbol**<br>**Value**<br>**Unit**<br>PD<br>1.5<br>W<br>RθJA<br>83<br>°C/W<br>50<br>°C/W<br>RθJC<br>14.5<br>°C/W|||
||Operatingand Storage Temperature Range|TJ,TSTG<br>-55 to +150<br>°C|||
||||||
|**Electrical Characteristics**|**Electrical Characteristics **(@TA= +25°C, unless otherwise specified.)||||
||||||
||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ **|**Max**||**Unit**<br>**Test Condition**|
||**OFF CHARACTERISTICS(Note 7) **||||
||Drain-Source Breakdown Voltage<br>BVDSS<br>30<br>—<br>Zero Gate Voltage Drain Current<br>IDSS<br>—<br>—<br>Gate-Source Leakage<br>IGSS<br>—<br>—<br>**ON CHARACTERISTICS(Note 7) **<br>~~oe~~|—<br>1<br>±10||V<br>VGS= 0V,ID= 250μA<br>μA<br>VDS= 24V,VGS= 0V<br>μA<br>VGS= ±20V,VDS= 0V|
||Gate Threshold Voltage<br>VGS(TH)<br>1<br>1.7<br>2.1<br>V<br>VDS= VGS,ID= 250μA<br>Static Drain-Source On-Resistance<br>RDS(ON)<br>—<br>16<br>22<br>mΩ<br>VGS= 10V,ID= 10A<br>—<br>23<br>30<br>VGS= 4.5V,ID= 6A<br>Forward Transfer Admittance<br>|Yfs|<br>—<br>8.3<br>—<br>S<br>VDS= 5V,ID= 6.9A<br>~~ee~~||||
||Diode Forward Voltage<br>VSD<br>0.5<br>—|1.2||V<br>VGS= 0V,IS= 1A|
||**DYNAMIC CHARACTERISTICS(Note 8)**||||
|Input Capacitance<br>Ciss<br>—<br>697<br>—<br>pF<br>VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>Output Capacitance<br>Coss<br>—<br>97<br>—<br>Reverse Transfer Capacitance<br>Crss<br>—<br>67<br>—<br>Gate Resistance<br>Rg<br>—<br>1.47<br>—<br>Ω<br>VDS= 0V,VGS= 0V,f = 1.0MHz<br>Total Gate Charge(VGS= 4.5V)<br>Qg<br>—<br>6.0<br>—<br>~~——— ee~~|||||
||Total Gate Charge(VGS= 10V)<br>Qg<br>—<br>13.2<br>Gate-Source Charge<br>Qgs<br>—<br>2.2|—<br>—||nC<br>VGS= 10V, VDS= 15V,<br>ID= 9A|
||Gate-Drain Charge<br>Qgd<br>—<br>1.8<br>—<br>Turn-On DelayTime<br>tD(ON)<br>—<br>4.3<br>—<br>ns<br>VDD= 15V, VGS= 10V,<br>RL= 15Ω, ID= 1A, RG= 6Ω<br>Turn-On Rise Time<br>tR<br>—<br>4.4<br>—<br>Turn-Off DelayTime<br>tD(OFF)<br>—<br>20.1<br>—<br>Turn-Off Fall Time<br>tF<br>—<br>4.1<br>—<br>Reverse RecoveryTime<br>tRR<br>—<br>7.3<br>—<br>ns<br>IF= 9A, di/dt = 500A/μs<br>Reverse RecoveryCharge<br>QRR<br>—<br>7.9<br>—<br>nC<br>~~—<———~~<br>~~a~~<br>~~ee~~<br>~~————————~~<br>~~a~~||||
||Notes:<br>5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.||||



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

6. IAR and EAR ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 6 **www.diodes.com** 

DMN3018SSD Document number: DS35583  Rev. 5 - 2 

October 2016 © Diodes Incorporated 

**DMN3018SSD** 

**==> picture [482 x 659] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 20<br>V     = 5.0VDS<br>25 Lm oo<br>16<br>) [A]<br>20 T [(]<br>N<br>Phew RE 12 a SSse<br>R<br>U<br>15 C<br>[her [N] IA 8 es T   = 150°CA<br>R<br>10 fp D oe T   = 125°CA ine<br>, D<br>I<br>T   = 85°CA<br>4<br>5 f= T   = 25°CA a<br>T   = -55°CA<br>0 A 0 WeFf<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig.1 Typical Output Characteristic   Fig.2  Typical Transfer Characteristics<br>0.1 0.08<br>)<br>(<br>V     = 4.5VGS<br>N [CE]<br>V GS = 2.5V T [A]<br>0.06<br>I [S] S<br>Pittttety ft<br>O [N-RE]<br>0.04 T   = 125°CA T   = 150°CA<br>CCE Ter<br>O [URCE]<br>VGS = 4.5V T   = 85°CA<br>I [N-S] 0.02 T   = 25°CA<br>a VGS = 10V D [RA] T   = -55°CA<br>,<br>O [N)]<br>[S(] D<br>0.01 0 Tot 4 8 12 e 16 20 }=9§F R 00 R==== 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.08<br>VGS  10= V<br>ID = 10A<br>1.4<br>0.06<br>RRRREES”,<br>VGS = 4.5V<br>1.2 I D = 5A<br>HE<br>0.04 V GS = 4.5V<br>ID = 5A<br>1.0<br>Evan<br>0.02<br>0.8 VGS  10= V<br>TLL ID = 10A<br>0.6 0<br>50 PETE -25 0 25 50 EEL 75 100 125 150 - 50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D<br> I<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMN3018SSD Document number: DS35583  Rev. 5 - 2 

October 2016 

© Diodes Incorporated 

**DMN3018SSD** 

**==> picture [478 x 649] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.4 20<br>[V)]<br>2.0<br>ml | |LE<br>T [AGE(] I    = 1mAD 15<br>[V)] (T<br>DV [OL] 1.6 oS I    = 250µAD [N] E<br>R<br>R<br>U<br>1.2 CE 10 T   = 25°CA<br>C<br>R<br>T [HRESHOL]<br>0.8 [U] O<br>S<br>[ATE] G CTT S 5 Ty yy<br>I [,]<br>,<br>( [th)] 0.4<br>G [S]<br>V<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>T  , JUNCTION TEMPERATURE (C)J  V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Junction Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10 1,000<br>Ciss<br>++ __ ++]<br>8 V DS = 15V, I D   9= A YLnavalVA a : [Wo] (C—Oee | fo<br>6<br>Coss<br>100<br>/ ee<br>4 / ee<br>Crss<br>_—/ es ee ee<br>2 f_ po<br>ee ee ee<br>f = 1MHz<br>0 10<br>0 2 4 6 8 10 12 14 16 0 5 10 15 20<br>Qg [, TOTAL GATE CHARGE ]  (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Gate Charge Fig. 10 Typical Junction Capacitance<br>100 FR<br>—(NTeseeee eSPN ee CH<br>10 teeesR  KRCOSINE Si P W  = 10 lll µs HH<br>ASN<br>LZ | IN NUNONONNETANGTTOS ESN<br>DINNERS DC<br>1 — PW = 10s INNA<br>PW = 1s<br>ae P W  = 100ms JOR<br>PW = 10ms<br>0.1 pL}rth| | tty _, PW P  = 1ms W = 100 NSS 100µs 祍 INN EE<br>Tymax) = 150°C rN<br>0.01 ryeSingle Pulse LECHaLTHIE PLETEi<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMN3018SSD Document number: DS35583  Rev. 5 - 2 

October 2016 © Diodes Incorporated 

**DMN3018SSD** 

**==> picture [400 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.9<br>D = 0.7<br>SSPT D = 0.5 D = 0.3 eTaa<br>HHH ee oa HH LH<br>0.1 SE<br>D = 0.1<br>BEE omer ESWINE | AI<br>a<br>D = 0.05<br>by [CHICA] te<br>LE tA tt<br>D = 0.02<br>RATHER HET<br>0.01 a eee Zee RE<br>D = 0.01<br>A<br>D = 0.005<br>ELLIEHa CTHTIEETHTee ee R RJA(t)JA = 85  = r (t)C/W  * R JA  TT<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001 [CCUM] [UE]  CE rl<br>cream [CAM] TH<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [421 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
SO-8<br>Dim  Min  Max  Typ<br>| 1 | E TO ee A  1.40 1.50 1.45<br>A1  0.10 0.20 0.15<br>O ee<br>1 b  0.30 0.50 0.40<br>c  0.15 0.25 0.20<br>—— — ee ee<br>D  4.85  4.95  4.90<br>qo o ' a o G eeee<br>E  5.90  6.10  6.00<br>b E1 ee E1  3.80  3.90  3.85<br>h Q ee E0  ee 3.85  3.95  3.90<br>7° e  --  --  1.27<br>7 ] c ee h  -  --  0.35<br>A 4°± 3° L   0.62  0.82  0.72<br>— G auge Plane eeee<br>S eating Plane Q 0.60 0.70 0.65<br>tL e A1 E0 L es__ss~—‘“‘CSCS*™*~*~*~* All Dimensions in mm<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [101 x 119] intentionally omitted <==**

**----- Start of picture text -----**<br>
X1<br>i u EE<br>Y1<br>a<br>moo<br>Y<br>re C X |ee<br>**----- End of picture text -----**<br>


|**Dimensions V**<br>**C**<br>**X**<br>**X1**|**V**|**Value (in mm)**<br>1.27<br>0.802<br>4.612|
|---|---|---|
|**Y**<br>**Y1**||1.505<br>6.50|



5 of 6 **www.diodes.com** 

DMN3018SSD Document number: DS35583  Rev. 5 - 2 

October 2016 © Diodes Incorporated 

**DMN3018SSD** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN3018SSD Document number: DS35583  Rev. 5 - 2 

October 2016 © Diodes Incorporated