DMN3006SCA6-7

**DMN3006SCA6 N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVSSS**<br>**RSS(ON) Typ**<br>**IS Max**<br>**TA = +25°C**<br>30V<br>4.8mΩ@VGS= 8V<br>13.0A<br>6.3mΩ@VGS= 4.5V<br>11.5A|||
|**BVSSS**|**RSS(ON) Typ**|**IS Max**<br>**TA = +25°C**|
|30V|4.8mΩ@VGS= 8V|13.0A|
||6.3mΩ@VGS= 4.5V|11.5A|



## **Features** 

- CSP with Footprint 3.5mm × 1.9mm 

- Height = 0.11mm for Low Profile 

- ESD Protection of Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

## **Description** 

This new generation MOSFET is designed to minimize on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## ~~a~~ 

## **Applications** 

## **Mechanical Data** 

   - Case: X4-DSN3519-6 

   - Terminal Connections: See Diagram Below 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish — NiPdAu or NiAu. Solderable per MIL-STD202, Method 208 oO **e4** 

   - • Weight: 0.0012 grams (Approximate) 

- Battery Management 

- Load Switch 

- Battery Protection 

X4-DSN3519-6 

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1. Gate 1            Top View 

2. Source 1 

3. Drain 4. Drain 

Equivalent Circuit 

5. Source 2 

6. Gate 2 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information **(Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging **|
|DMN3006SCA6-7|X4-DSN3519-6|3000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

ME = Product Type Marking Code YM =Y or ~~_~~ Y  D= Year (ex: H = 2020) ate Code Marking M or M = Month (ex: 9 = September) 

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**DMN3006SCA6** 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Source-Source Voltage|||VSSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Source Current (Note 5) VGS= 8V|Steady<br>State|TA = +25°C<br>TA = +70°C|IS|13.0<br>10.5|A|
|Continuous Source Current (Note 5) VGS= 4.5V|Steady<br>State|TA = +25°C<br>TA = +70°C|IS|11.5<br>9.0|A|
|Pulsed Source Current(Note 6)|||ISM|80|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 7)|PD|0.8|W|
|Thermal Resistance,Junction to Ambient@TA = +25°C(Note 7)|RθJA|162|°C/W|
|Power Dissipation(Note 5)|PD|1.8|W|
|Thermal Resistance,Junction to Ambient@TA = +25°C(Note 5)|RθJA|68|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**|||||||
|Source-Source Breakdown Voltage|BVSSS|30|—|—|V|VGS= 0V,IS= 1mA|
|Zero Gate Voltage Drain Current TJ= +25°C|ISSS|—|—|1|µA|VSS= 24V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±10|µA|VGS= ±20V,VSS= 0V|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage<br>~~=.~~|VGS(TH)<br>~~=.~~|1.3<br>~~=.~~|—<br>~~=.~~|2.2<br>~~=.~~|V<br>~~=.~~|VSS= 10V,IS = 1mA<br>~~=.~~|
|Static Source-Source On-Resistance<br>~~=.~~|RSS(ON)<br>~~=.~~|2.5<br>~~=.~~|4.6<br>~~=.~~|5.5<br>~~=.~~|mΩ<br>~~=.~~|VGS= 10V,IS= 5A<br>~~=.~~|
|||2.7<br>~~=.~~|4.8<br>~~=.~~|7.2<br>~~=.~~||VGS= 8V,IS= 5A<br>~~=.~~|
|||3.0<br>~~=.~~|6.3<br>~~=.~~|9.0<br>~~=.~~||VGS= 4.5V,IS= 5A<br>~~=.~~|
|Diode Forward Voltage<br>~~=.~~<br>~~———~~|VSS<br>~~=.~~|—<br>~~=.~~|0.95<br>~~=.~~|1.2<br>~~=.~~<br>~~e~~|V<br>~~=.~~<br>~~e~~|VGS= 0V,IS= 5A<br>~~=.~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~———~~<br>~~ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss|—|2235|—<br>~~e~~|pF<br>~~e~~<br>~~eee~~|VSS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Output Capacitance<br>~~———~~|Coss|—|414|—<br>~~e~~|||
|Reverse Transfer Capacitance<br>~~———~~<br>~~———~~|Crss|—|274<br>~~e~~|—<br>~~e~~<br>~~e~~|||
|Total Gate Charge<br>~~———~~<br>~~———~~|Qg|—|17.7<br>~~e~~|—<br>~~e~~<br>~~e~~|nC<br>~~e~~<br>~~eee~~<br>~~ee~~|VSS= 15V, VGS= 4.5V,<br>IS= 5A<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~———~~<br>~~———~~|Qgs|—|4.9<br>~~e~~|—<br>~~e~~<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~|Qgd|—|6.1<br>~~e~~|—<br>~~e~~|||
|Gate Charge at VTH<br>~~———~~<br>~~——————~~|Qg(TH)|—|3.0<br>~~e~~<br>~~ee~~|—<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~———~~<br>~~——————~~|tD(ON)|—|5.6<br>~~e~~<br>~~ee~~|—<br>~~e~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~|VSS= 15V, VGS= 10V,<br>IS= 5A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~——————~~|tR|—|8.7<br>~~e~~<br>~~ee~~|—<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~——————~~|tD(OFF)|—|41.6<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~——————~~|tF|—|20.9<br>~~ee~~|—<br>~~ee~~|||



Notes: 5. Device mounted on FR-4 material with 1inch[2 ] (6.45cm[2] ), 2oz. (0.071mm thick) Cu. 

6. Repetitive rating, pulse width limited by junction temperature. 

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to production testing. 

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30.0 30<br> VGS = 3.5V<br> VGS = 4.0V  VSS = 5V<br>25.0 |  VGS = 4.5V   VGS = 3.0V  25 e e<br> VGS = 10V<br>20.0 Ho 20 in<br>15.0 15<br>WA eee in<br> VGS = 2.8V<br>10.0 10<br>= a TJ = 150 ℃ /a<br>TJ = 125 ℃<br>5.0  VGS = 2.5V  5 TJ = 85 ℃<br>V o H i}<br> VGS = 2.2V  TJ = 25 ℃ TJ = -55 ℃<br>0.0 _— —— 0 By)<br>0 0.4 0.8 1.2 1.6 2 1 1.5 2 2.5 3<br>VSS, SOURCE-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.008 0.05<br>0.045<br>0.007<br>0.04<br>0.006 HE E]  VGS = 4.5V  0.035 AREERPt) | tte et<br>0.03<br>0.005 ee 0.025<br> VGS = 8.0V  0.02<br>0.004<br>0.015<br> VGS = 10V  IS = 5.0A<br>0.01<br>0.003<br>0.005<br>0.002 PCECEECeeey) 3S 0 —\ EES P| tft fe<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>IS, SOURCE-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Source Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>, SOURCE-SOURCE CURRENT (A) IS , SOURCE-SOURCE CURRENT (A) IS<br>(Ω)  (Ω)<br>, SOURCE-SOURCE ON-RESISTANCE  , SOURCE-SOURCE ON-RESISTANCE<br>SS(ON) SS(ON)<br>R R<br>**----- End of picture text -----**<br>


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0.008 1.8<br>VGS = 10V   VGS = 10V, IS = 5.0A<br>0.007 TJ = 150 ℃<br>1.6  VGS = 8.0V, IS = 5.0A<br>0.006<br>SS TJ = 125 ℃ 1.4 y<br>Fe] oft y,<br>0.005 TJ = 85 ℃<br>Se 1.2<br>0.004<br>TJ = 25 ℃ 1  VGS = 4.5V, IS = 5.0A<br>0.003<br>TJ = -55 ℃<br>Se e) 0.8 C ane<br>0.002 e e ae<br>0.001 PT TTT) 0.6 6<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>IS, SOURCE-SOURCE CURRENT (A)   TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Source Current  Figure 6. On-Resistance Variation with Junction<br>and Junction Temperature  Temperature<br>0.0090.01 ce  VGS = 4.5V, IS = 5.0A  yTOO«& 1.82<br>0.008<br>P re) 1.6 BR EE IS = 1mA<br>0.007  VGS = 8.0V, IS = 5.0A<br>1.4<br>0.006 san gre Ge en<br>1.2 IS = 250μA<br>0.005<br>a 1 oS ;<br>0.004<br> VGS = 10V, IS = 5.0A<br>0.0030.002 cea ooopt 0.80.6 EN -CEPTTENEeS<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature  Temperature<br>, SOURCE-SOURCE ON-RESISTANCE (Ω)  , SOURCE-SOURCE ON-RESISTANCE (Ω)<br>SS(ON) SS(ON)<br>R R<br>(Ω)<br>, GATE THRESHOLD VOLTAGE (V)<br>, SOURCE-SOURCE ON-RESISTANCE<br>GS(TH)<br>SS(ON) V<br>R<br>**----- End of picture text -----**<br>


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10 10000<br>VGS = 0V  f = 1MHz<br>8 A /| a Sareees<br>/ ee<br>a Ciss<br>6 ! ——}—}- + +<br>f}/ 1000 Ki tttf<br>4 Coss<br>TJ = 150 [o] C<br>2 TJ = 125 [o] C<br>TJ = 85 [o] C  WA TJ = 25 [o] C  Crss<br>TJ = -55 [o] C<br>0 Wp maa 100 ae i<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30<br>VFSS, SOURCE-SOURCE VOLTAGE (V)  VSS, SOURCE-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10<br>1000<br>R<br>SS(ON)<br>Limited<br>8 PW = 1ms<br>100<br>PW = 10ms  PW = 100µs<br>6 J TT ae SON<br>10<br>4 1 PW = 100ms<br>VSS = 15V, IS = 5A  TJ(Max) = 150 ℃<br>2 0.1 TSingle Pulse C = 25 ℃ PW = 1s<br>DUT on 1*MRP<br>Board  PW = 10s<br>0 cot 0.01 VGS = 4.5V Le ee DC  eLil<br>0 5 10 15 20 25 30 35 40<br>0.01 0.1 1 10 100<br>Qg (nC)  VSS, SOURCE-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>, SOURCE-SOURCE CURRENT (A)  T<br>IS C<br> (V)<br>GS<br>V<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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## 1a cCORPORATEAD 

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1 i rere<br>se SS<br>aMaaoN |<br>mail D=0.7  EE a cc a | |<br>D=0.5<br>mill 81 ccmA I ET ET<br>EE D=0.3  mn<br>eT aa ee AN<br>D=0.9<br>0.1 S T UIT<br>c c ”<br>e pt D=0.1  aea a Fee|  Peet|<br>rr rT I<br>ST PN, D=0.05  IT AOA INPe<br>M ae UIE ETATLTEE UTA TTT TATE<br> canal ri /|<br>D=0.02<br>0.01<br>s EaaY dYIIITAAUI UIT<br>HHPt tt D=0.01  Sl ALMAE TTTRETPPPEP HK HH HK EH<br>T A<br>P| [L][ATIMES]<br>D=0.005<br>RθJA(t) = r(t) * RθJA<br>BSA eai I AMMAVTVOMATUTNAGNU/OMOTUT/ORATVOMOGN/ON OTEIDE PIE<br>TE EINE ATT ETE TNT TATTLE ETAT 1 RθJA = 163 ℃ /W<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN3006SCA6** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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D k3 b2 k3 X4-DSN3519-6<br>Dim  Min  Max  Typ<br>A  0.09  0.16  0.11<br>L b  --  --  0.25<br>ee, FEES b2  --  --  2.00<br>E e D  3.45 3.55 3.50<br>E  1.85 1.95 1.90<br>e --  --  0.95<br>k k1 k  --  --  0.30<br>k1  --  --  0.35<br>ao k2 Ø b( 4x) k2 === k2  --  --  0.085<br>k3  --  --  0.415<br>A<br>L  --  --  0.35<br>All Dimensions in mm<br>a fE<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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C<br>4<br>== D Ø 4x)<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|**()**<br>0.95|
|**X**|0.25|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

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