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DMN2990UDJ-7
Dual MOSFET, N Channel, 20 V, 20 V, 450 mA, 450 mA, 0.99 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-963
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 350mW
- Power Dissipation P Channel: 350mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 450mA
- Continuous Drain Current Id P Channel: 450mA
- Drain Source On State Resistance N Channel: 0.99ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.096 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMN2990UDJ**
**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON) Max**|**ID Max**<br>**TA = 25°C**|
|20V|0.99Ω@VGS= 4.5V|450mA|
||1.2Ω@VGS= 2.5V|400mA|
||1.8Ω@VGS= 1.8V|330mA|
||2.4Ω@VGS= 1.5V|300mA|
## **Features**
- Dual N-Channel MOSFET
- Low On-Resistance
- Very Low Gate Threshold Voltage, 1.0V Max
- Low Input Capacitance
- Fast Switching Speed
- Ultra-Small Surface Mount Package 1mm x 1mm
- Low Package Profile, 0.45mm Maximum Package Height
- ESD Protected Gate
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
## **Description**
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMN2990UDJQ)**
## **Mechanical Data**
## **Applications**
- General Purpose Interfacing Switch
- Power Management Functions
- DC-DC Converters
- Analog Switch
- Case: SOT963
- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See Diagram
- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.027 grams (Approximate)
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D1 G2 S2<br>SOT963<br>S1 G1 D2<br>ESD PROTECTED - © fae Top View<br>Top View<br>Schematic and Transistor Diagram<br> Information (Note 4)<br>Part Number Case Packaging<br>DMN2990UDJ-7 SOT963 10K/Tape & Reel<br>DMN2990UDJ-7A SOT963 10K/Tape & Reel<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information** (Note 5 & 6)
**DMN2990UDJ-7** (Note 5) **L1** eve!
**DMN2990UDJ-7A** (Note 6)
**L1** L1 = Product Type Marking Code bee!
- Notes: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
6. Part number with suffix 7A designates devices marked with a Pin 1 indicator. There is no other difference between both devices.
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**DMN2990UDJ**
**Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 7) VGS= 4.5V|Steady<br>State|TA= +25C<br>TA= +70C|ID|450<br>350|mA|
|Continuous Drain Current (Note 7) VGS= 1.8V|Steady<br>State|TA= +25C<br>TA= +70C|ID|330<br>220|mA|
|Pulsed Drain Current(Note 8)|||IDM|800|mA|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Total Power Dissipation(Note 7)|PD|350|mW|
|Thermal Resistance,Junction to Ambient|RJA|360|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|
**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~————=—-———~~|**Symbol**<br>~~————=—-———~~|**Min**<br>~~————=—-———~~|**Typ **<br>~~————=—-———~~|**Max**<br>~~————=—-———~~|**Unit**<br>~~————=—-———~~|**Test Condition**<br>~~————=—-———~~|
|**OFF CHARACTERISTICS(Note 9) **<br>~~————=—-———~~|||||||
|Drain-Source Breakdown Voltage<br>~~————=—-———~~|BVDSS<br>~~————=—-———~~|20<br>~~————=—-———~~|-<br>~~————=—-———~~|-<br>~~————=—-———~~|V<br>~~————=—-———~~|VGS= 0V,ID= 250μA<br>~~————=—-———~~|
|Zero Gate Voltage Drain Current @TC= +25°C<br>~~————=—-———~~|IDSS<br>~~————=—-———~~|-<br>~~————=—-———~~|-<br>~~————=—-———~~|50<br>~~————=—-———~~|nA<br>~~————=—-———~~|VDS= 5V,VGS= 0V<br>~~————=—-———~~|
|||-<br>~~————=—-———~~|-<br>~~————=—-———~~|100<br>~~————=—-———~~||VDS= 16V,VGS= 0V<br>~~————=—-———~~|
|Gate-Source Leakage<br>~~————=—-———~~|IGSS<br>~~————=—-———~~|-<br>~~————=—-———~~|-<br>~~————=—-———~~|±100<br>~~————=—-———~~|nA<br>~~————=—-———~~|VGS= ±5V,VDS= 0V<br>~~————=—-———~~|
|**ON CHARACTERISTICS(Note 9) **<br>~~————=—-———~~|||||||
|Gate Threshold Voltage|VGS(TH)<br>~~EES~~|0.4<br>~~EES~~|-<br>~~EES~~|1.0<br>~~EES~~|V<br>~~EES~~|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance<br>~~|~~|RDS(ON)<br>~~|~~<br>~~EES~~|-<br>~~|~~<br>~~EES~~|0.60<br>~~|~~<br>~~EES~~|0.99<br>~~|~~<br>~~EES~~|<br>~~|~~<br>~~EES~~|VGS= 4.5V,ID= 100mA<br>~~|~~|
|||-<br>~~|~~<br>~~EES~~|0.75<br>~~|~~<br>~~EES~~|1.2<br>~~|~~<br>~~EES~~||VGS= 2.5V,ID= 50mA<br>~~|~~|
|||-<br>~~|~~<br>~~EES~~|0.90<br>~~|~~<br>~~EES~~|1.8<br>~~|~~<br>~~EES~~||VGS= 1.8V,ID= 20mA<br>~~|~~|
|||-<br>~~|~~<br>~~EES~~|1.2<br>~~|~~<br>~~EES~~|2.4<br>~~|~~<br>~~EES~~||VGS= 1.5V,ID= 10mA<br>~~|~~|
|||-<br>~~|~~<br>~~EES~~|2.0<br>~~|~~<br>~~EES~~|-<br>~~|~~<br>~~EES~~||VGS= 1.2V,ID= 1mA<br>~~|~~|
|Forward Transfer Admittance<br>~~|~~||Yfs|<br>~~|~~<br>~~EES~~|180<br>~~|~~<br>~~EES~~|-<br>~~|~~<br>~~EES~~|-<br>~~|~~<br>~~EES~~|ms<br>~~|~~<br>~~EES~~|VDS= 10V,ID= 400mA<br>~~|~~|
|Diode Forward Voltage(Note 8)<br>~~|~~|VSD<br>~~|~~<br>~~EES~~|-<br>~~|~~<br>~~EES~~|0.6<br>~~|~~<br>~~EES~~|1.0<br>~~|~~<br>~~EES~~|V<br>~~|~~<br>~~EES~~|VGS= 0V,IS= 150mA<br>~~|~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~EES~~<br>~~ee~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~EES~~<br>~~ee~~|-<br>~~EES~~<br>~~ee~~|27.6<br>~~EES~~<br>~~ee~~|-<br>~~EES~~<br>~~ee~~|pF<br>~~EES~~<br>~~ee~~|VDS= 16V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Output Capacitance<br>~~ee~~<br>~~——~~|Coss<br>~~ee~~|-<br>~~ee~~|4.0<br>~~ee~~|-<br>~~ee~~<br>~~e~~|pF<br>~~ee~~<br>~~e~~||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~——~~|Crss<br>~~ee~~|-<br>~~ee~~|2.8<br>~~ee~~|-<br>~~ee~~<br>~~e~~|pF<br>~~ee~~<br>~~e~~||
|Total Gate Charge<br>~~——~~|Qg|-|0.5|-<br>~~e~~|nC<br>~~e~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~——~~|Qgs|-|0.07|-<br>~~e~~|nC<br>~~e~~||
|Gate-Drain Charge<br>~~——~~<br>~~—<—<_—~~|Qgd|-|0.07|-<br>~~e~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~||
|Turn-On DelayTime<br>~~——~~<br>~~—<—<_—~~|tD(ON)|-|4.0|-<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= 10V, VGS= 4.5V,<br>RL= 47Ω, Rg= 10Ω,<br>ID= 200mA<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~<br>~~—<—<_—~~|tR|-|3.3|-<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<—<_—~~|tD(OFF)|-|19.0|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<—<_—~~|tF|-|6.4|-<br>~~ee~~|ns<br>~~ee~~||
8. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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0.8 0.8<br>VGS = 4.5V V = 5.0VDS T = -55°CA<br>VGS = 4.0V<br>VGS = 3.0V T =A 25°C T =A 85°C<br>0.6 VGS = 2.5V ) [A] (T 0.6<br>VGS = 2.0V NE T =A 125°C<br>R<br>R<br>0.4 UC 0.4 T =A 150°C<br>VGS = 1.5V I [N] A<br>R<br>D<br>, D<br>0.2 / I 0.2 [<br>VGS = 1.2V<br>0 L—— 0 Dinan<br>0 1 2 3 4 0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS, DRAIN-SOURCE VOLTAGE (A) V , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>1.2 ) 1.2<br>[(] E<br>C<br>1.0 1.0 V = 4.5VGS<br>T = 150°CA<br>0.8 VGS = 1.8V [SISTAN] E 0.8<br>- [R]<br>[N] O T =A 125°C<br>0.6 V GS = 2.5V CRE 0.6 T =A 85°C<br>T =A 25°C<br>0.4 VGS = 4.5V - [SOU] 0.4<br>a [IN] RDA === T =A -55°C<br>0.2 BS , ) 0.2 SES<br>O [N]<br>(S<br>D<br>R<br>c o 0<br>0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1.0<br>ID, DRAIN-SOURCE CURRENT I , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance<br>Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 1.2<br>1.0<br>1.4<br>co = 0.8 oo V I DGS = 150mA = 2.5V<br>1.2<br>0.6<br>1.0 nna VIDGS = 300mA = 4.5V, 0.4 Hee VIDGS = 300mA = 4.5V<br>0.8 0.2<br>Da tte<br>VGS = 2.5V,<br>ID = 150mA<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>eS TJ, JUNCTION TEMPERATURE(C) | Geese TJ, JUNCTION TEMPERATURE(C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized)<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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1.2 1.0<br>1.0<br>0.8<br>0.8 ID = 1mA<br>=e 0.6 | TA= 2525°C 癈<br>IDI=250D = 250A 礎<br>0.6<br>oo . 0.4 Cy<br>0.4<br>0.2<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>TJ, JUNCTION TEMPERATURE(C) VSD, SOURCE- DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diodes Forward Voltage vs. Current<br>50 1,000 aa<br>f = 1MHz<br>a<br>======——<br>40 Pf | ff<br>)A [n] (T T = 150°CA<br>N 100<br>30 E<br>R<br>|_| Ciss __ RUC =———SaSa |ee T =A 125°C<br>20 G [E] | | | | | ft | ft<br>A<br>KA 10 T =A 85°C<br>10 EL, eePgaa a ee T =A 25°C<br>D [SS]<br>Coss I<br>a<br>0 a Crss 1 ee eee<br>0 5 10 15 20 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>8 1<br>RDS(ON)<br>Limited CPSINKO RCTS<br>A DC NN Ns|<br>6 ) [A] 0.1 P = 10sW P = 1sW P = 100µsW i<br>N [T(] —7stee oo ol LASS, [SSN] ESC<br>——ee aeee P = 100msW eeCUNNK | {aSt P = 10µsW<br>4 C [URRE] es P = 10msW NING |<br>I [N] D [RA] 0.01 llee P = 1msW / S illl<br>2 I [,] D ee T = 150°CJ(MAX) eeee |<br>VDS = 10V T = 25°CA ee<br>ID = 250mA Single Pulse ee ||<br>R LimitedDS(ON)<br>0 0.001 Lot TELL |<br>0 0.2 0.4 0.6 0.8 1 0.1 1 10 100<br>Qg [, TOTAL GATE CHARGE ] (nC) V , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 11 Gate Charge Fig. 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>, DRAIN CURRENT (A)<br>ID<br>CT, JUNCTION CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>
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1<br>Pt D = 0.7 rr ee<br>D = 0.5 a|<br>a |<br>D = 0.3<br>[en] GB 0015-70 MRLLLLAN OITA ETT OMANI TT<br>SU [iia] ae eg D = 0.9 of |<br>0.1<br>D = 0.1<br>|<br>Neet eee e ces e oFze |Meeealleoesate ees re a teen eres | area<br>D = 0.05<br>FEIT<br>1 a a70<br>D = 0.02<br>Seamiaal mmm 011H2QAIGNMANI/OM AIO OUT OM O01 RTUUT/ONOUNIT<br>ll TAIIE IIE LITT<br>0.01 D = 0.01 ey A ee eee ee HH HH ee HI<br>eo OA ee<br>D = 0.005<br>RJA (t) = r(t)*RJA<br>SO RAT CE RJA = 356C/W356°C/W ll<br>Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 13 Transient Thermal Resisitance<br>R(t), TRANSIENT THERMAL RESISITANCE<br>**----- End of picture text -----**<br>
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**DMN2990UDJ**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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SOT963<br>D<br>L1<br>e1<br>SOT963<br>Dim Min Max Typ<br>E1 E A 0.40 0.50 0.45<br>A1 0.00 0.05 --<br>b 0.10 0.20 0.15<br>c 0.120 0.180 0.150<br>D 0.95 1.05 1.00<br>w e ot Sh c E 0.95 1.05 1.00<br>b E1 0.75 0.85 0.80<br>e -- -- 0.35<br>e1 -- -- 0.70<br>aan L1 0.05 0.15 0.10<br>All Dimensions in mm<br>A1<br>A<br>Seating plane<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **SOT963**
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C<br>Value<br>Dimensions<br>(in mm)<br>C 0.350<br>Y1<br>X 0.200<br>Y 0.200<br>p od _ Y1 1.100<br>Y<br>X<br>**----- End of picture text -----**<br>
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**DMN2990UDJ**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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DMN2990UDJ Document number: DS35401 Rev. 8 - 2
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Updated at June 9, 2026
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