DMN26D0UDJ-7

**DMN26D0UDJ** 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>TA= +25°C|
|20V|3.0Ω@VGS= 4.5V|240mA|
||6.0Ω@VGS= 1.8V|180mA|



## **Features** ~~a~~ 

 Dual N-Channel MOSFET 

- Low On-Resistance: 

   - 3.0Ω @ 4.5V 

   - 4.0Ω @ 2.5V 

   - 6.0Ω @ 1.8V 

## **Description** 

   - 10Ω @ 1.5V 

- Very Low Gate Threshold Voltage, 1.05V Max 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Low Input Capacitance 

- Fast Switching Speed 

- Ultra-Small Surface Mount Package 

- ESD Protected Gate (HBM 300V) 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: SOT963 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.0027 grams (Approximate) 

ESD PROTECTED 

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SOT963<br>**----- End of picture text -----**<br>


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Top View<br>**----- End of picture text -----**<br>


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D1 G2 S2<br>S1 G1 D2<br>Top View<br>Schematic and Transistor Diagram<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Case**|**Packaging**|
|---|---|---|
|DMN26D0UDJ-7|SOT963|10,000/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** (Note 5) 

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D1 G2 S2<br>M1 M1 = Product Type Marking Code<br>S1 G1 D2<br>**----- End of picture text -----**<br>


5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 

Note: 

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DMN26D0UDJ Document number: DS31481 Rev. 9 - 2 

December 2014 © Diodes Incorporated 

**DMN26D0UDJ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|
|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain Source Voltage<br>VDSS<br>20<br>V<br>Gate-Source Voltage<br>VGSS<br>10<br>V<br>Continuous Drain Current (Note 6) VGS= 4.5V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>240<br>190<br>mA<br>Continuous Drain Current (Note 6) VGS= 1.8V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>180<br>140<br>mA<br>Pulsed Drain Current - TP= 10µs<br>IDM<br>805<br>mA<br>**Thermal Characteristics**<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Total Power Dissipation(Note 6)<br>PD<br>300<br>mW<br>~~es~~<br>~~es a~~<br>~~ee~~<br>~~a~~||
||Thermal Resistance,Junction to Ambient(Note 6)<br>RθJA<br>409<br>°C/W|
||Operatingand Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage<br>~~LLL~~|BVDSS<br>~~LLL~~|20<br>~~LLL~~|<br>~~LLL LLL~~|<br>~~LLL~~|V<br>~~LLL~~|VGS= 0V,ID= 100μA<br>~~LLL~~|
|Zero Gate Voltage Drain Current<br>@ TJ= +25°C<br>@TJ=  +85°C(Note 8)<br>~~LLL~~|IDSS<br>~~LLL~~|<br>~~LLL~~|<br>~~LLL LLL~~|500<br>1.7<br>~~LLL~~|nA<br>µA<br>~~LLL~~<br>~~er~~|VDS= 20V, VGS= 0V<br>VDS= 2.6V,VGS= 0V<br>~~LLL~~<br>~~er~~|
|Gate-Body Leakage<br>~~Te~~|IGSS<br>~~Te~~|<br>~~Te~~|<br>~~Te~~|1<br>100<br>~~Te~~|μA<br>nA<br>~~Te~~<br>~~er~~|VGS= ±10V, VDS= 0V<br>VGS= ±5V,VDS= 0V<br>~~Te~~<br>~~er~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~er~~|||||||
|Gate Threshold Voltage|VGS(th)|0.45|0.8|1.05|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance<br>~~===~~<br>~~————~~|RDS (ON)<br>~~===~~<br>|<br>~~===~~|1.8<br>~~===~~|3.0<br>~~===~~|Ω<br>~~===~~<br>|VGS= 4.5V,ID= 100mA<br>~~===~~|
|||<br>~~===~~|2.5<br>~~===~~|4.0<br>~~===~~||VGS= 2.5V,ID= 50mA<br>~~===~~|
|||<br>~~===~~|3.4<br>~~===~~|6.0<br>~~===~~||VGS= 1.8V,ID= 20mA<br>~~===~~|
|||<br>~~===~~<br>|4.7<br>~~===~~<br>|10.0<br>~~===~~<br>||VGS= 1.5V,ID= 10mA<br>~~===~~<br>|
|||<br>~~===~~<br>|9.5<br>~~===~~<br>|<br>~~===~~<br>||VGS= 1.2V,ID= 1mA<br>~~===~~<br>|
|Forward Transconductance<br>~~————~~||Yfs|<br>|180<br>|240<br>|<br>|mS<br>|VDS=10V,ID= 0.1A<br>|
|Source-Drain Diode Forward Voltage<br>~~————~~|VSD<br>|0.5<br>|0.8<br>|1.0<br>|V<br>|VGS= 0V,IS= 10mA<br>|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~————~~|||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|<br>~~a~~|14.1<br>~~a~~|<br>~~a~~|pF<br>~~a~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>~~a~~|
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|<br>~~a~~|2.9<br>~~a~~|<br>~~a~~|pF<br>~~a~~||
|Reverse Transfer Capacitance<br>~~a~~|Crss<br>~~a~~|<br>~~a~~|1.6<br>~~a~~|<br>~~a~~|pF<br>~~a~~||
|**SWITCHING CHARACTERISTICS, VGS = 4.5V(Note 8)**|||||||
|Turn-On DelayTime<br>~~eee~~|td(on)<br>~~eee~~|<br>~~eee~~|3.8<br>~~eee~~|<br>~~eee~~|ns<br>~~eee~~|VGS= 4.5V, VDD= 10V<br>ID= 200mA, RG= 2.0Ω<br>~~eee~~|
|Rise Time<br>~~eee~~|tr<br>~~eee~~|<br>~~eee~~|7.9<br>~~eee~~|<br>~~eee~~|||
|Turn-Off DelayTime<br>~~eee~~|td(off)<br>~~eee~~|<br>~~eee~~|13.4<br>~~eee~~|<br>~~eee~~|||
|Fall Time<br>~~eee~~|tf<br>~~eee~~|<br>~~eee~~|15.2<br>~~eee~~|<br>~~eee~~|||



Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design, not subject to production testing. 

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**DMN26D0UDJ** 

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0.8 0.4<br>0.7 VGS = 8V V GS  = 4.5V VDS = -10V<br>0.6 ho 0.3 T A = -55°C<br>VGS = 3.0V TA = 25°C<br>0.5 TA = 85°C<br>TA = 125°C<br>0.4 VGS = 2.5V 0.2 TA = 150°C<br>0.3<br>VGS = 2.0V<br>0.2 poof 0.1<br>0.1 V GS  = 1.5V<br>0 ne 0 Ae<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2  Typical Transfer Characteristic<br>109 a a ll 4<br>VGS = 4.5V<br>8<br>3<br>7<br>6 ee) = CT TA = 150°C<br>VGS = 1.2V<br>5 oe | 2 Su<br>TA = 125°C<br>4 TA = 85°C<br>3 VGS = 1.5V TA = 25°C<br>SES 1<br>2 VGS = 1.8V TA = -55°C<br>VGS = 2.5V<br>1 See VGS = 4.5V<br>0 aaii 0 eT<br>1 10 100 1,000 0.01 0.1 1<br>ID, DRAIN-SOURCE CURRENT (mA) ID, DRAIN CURRENT (A)<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>2.0 4.0<br>1.8 PT ttt ytd 3.5 PTETtL Ld<br>1.6<br>VGS = 4.5V 3.0<br>ID = 500mA<br>1.4<br>2.5<br>VGS = 2.5V<br>1.2 Of I D  = 150mA VGS = 2.5V 7<br>A 2.0 ID = 150mA ae<br>1.0<br>Coe 1.5 peal aae<br>0.8<br>VGS = 4.5V<br>AS 1.0 ID = 500mA<br>0.6<br>0.4 PT} tet 0.5 eet Heth<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>DSON<br>)<br>, DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

Document number: DS31481 Rev. 9 - 2 

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1.4 0.8<br>1.2 0.7<br>| tye yy TT<br>0.6 TA = 25°C<br>1.0<br>0.5<br>0.8 HE I D  = 1mA TT ety<br>0.4 EP<br>See ee ee<br>0.6<br>ID = 250µA 0.3<br>SS Cee<br>0.4<br>0.2<br>0.2 TTT<br>tty [yyy] = 0.1 CCP<br>0 | 0 yy<br>-50 -25 try 0 25 50 yyy 75 100 125 150 0 Tey 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>20 10,000<br>f = 1MHz<br>1,000 TA = 150°C<br>15<br>Ciss T A  = 125°C<br>100<br>10 TCR eee TA = 85°C<br>10<br>We ===seeeee=<br>5 Coss 1 TA = 25°C<br>TA = -55 ° C<br>0 ——— Crss 0.1 SS<br>0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>C, CAPACITANCE (pF)<br>, SOURCE CURRENT (A)<br>IS<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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D<br>e1<br>L<br>E1 E<br>i Ts<br>e b (6 places) c<br>A<br>A1<br>Coal<br>**----- End of picture text -----**<br>


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SOT963<br>Dim  Min  Max  Typ<br>A  0.40 0.50 0.45<br>A1  0 0.05 -<br>c 0.120 0.180 0.150<br>D  0.95 1.05 1.00<br>E  0.95 1.05 1.00<br>E1  0.75 0.85 0.80<br>L  0.05 0.15 0.10<br>b  0.10 0.20 0.15<br>e 0.35 Typ<br>e1  0.70 Typ<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


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DMN26D0UDJ Document number: DS31481 Rev. 9 - 2 

December 2014 © Diodes Incorporated 

**DMN26D0UDJ** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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C C<br>rade<br>Y1<br>Y (6X)<br>:<br>X (6X)<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.350|
|**X**|0.200|
|**Y**|0.200|
|**Y1**|1.100|



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## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

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Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

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DMN26D0UDJ Document number: DS31481 Rev. 9 - 2 

December 2014 © Diodes Incorporated