DMN2300UFL4-7

**DMN2300UFL4** Green f **20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**Max RDS(ON)**|**ID max**<br>**TA = +25°C**<br>**(Note 6)**|
|20V|195mΩ @ VGS= 4.5V|2.11A|
||260mΩ @ VGS = 2.5V|1.83A|
||380mΩ @ VGS = 1.8V|1.51A|
||520mΩ @ VGS = 1.5V|1.29A|



## **Features and Benefits** 

- Footprint of Just 1.3mm[2] 

- Ultra Low Profile Package — 0.4mm Profile 

- On Resistance <200mΩ 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- Ultra-Small Surface Mount Package 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Load Switch 

- Case: X2-DFN1310-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish — NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e4** 

X2-DFN1310-6 

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ESD PROTECTED<br>**----- End of picture text -----**<br>


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Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|---|---|---|---|---|
|DMN2300UFL4-7|23N|7|8|3000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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23N<br>**----- End of picture text -----**<br>


23N = Product Type Marking Code 

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DMN2300UFL4 Datasheet number: DS35946  Rev. 4 - 2 

June 2019 © Diodes Incorporated 

**DMN2300UFL4** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6)|Continuous Drain Current (Note 6)<br>Steady<br>State|TA = +25°C<br>TA = +85°C|ID|2.11<br>1.19|A|
|Pulsed Drain Current(Note 7)|||IDM|6.0|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)<br>(Note 6)|PD|0.53|W|
||||1.39||
|Thermal Resistance, Junction to Ambient|(Note 5)<br>(Note 6)|RθJA|238|°C/W|
||||90||
|Operatingand Storage Temperature Range||TJ, TSTG<br>-55 to +150|-55 to +150|°C|



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100<br>90 Single Pulse<br>RJA = 230C/W<br>80 R JA(t)  = r (t) * R JA<br>TJ - TA = P * RJA(t)<br>70<br>60<br>50<br>40<br>30<br>20 ENUM ETM CTT TITALTE<br>10 EI N UTM LILI ETM LT An<br>0 TINS NN CTC<br>0.0001 0.001 0.01 0.1 1 10 100<br>t1, PULSE DURATION TIME (sec)<br>Fig. 1 Single Pulse Maximum Power Dissipation<br>1<br>D = 0.7<br>D = 0.5<br>Se a ae a<br>pC D = 0.3 eer<br>D = 0.9<br>a an aCr aeOrnea oe |<br>0.1 2200<br>D = 0.1<br>a 77 |<br>D = 0.05<br>Ra Eaaf<br>D = 0.02<br>0.01 Sreeee aa AUHTVOMAAATIN ATT TTL GTUIOM OTH TUT<br>D = 0.01<br>CNOA on on oe RR θJA JA(t) = r(t) (t) = r(t) * R *  R θJA JA TTT<br>— x D = 0.005 FETE CIEE RR θJAJA  = 230 = 230 ℃癈 /W /W maul<br>Single Pulse Duty Cycle, D = t1/ t2Duty Cycle, D = t1 / t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Fig. 2  Transient Thermal ResistanceFig. 2 Transient Thermal Resistance<br>, PEAK TRANSIENT POIWER (W)<br>P<br>(PK)<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMN2300UFL4 Datasheet number: DS35946  Rev. 4 - 2 

June 2019 © Diodes Incorporated 

**DMN2300UFL4** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS= 0V,ID= 10μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1|µA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|10|µA|VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage|VGS(TH)|0.45|—|0.95|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance|RDS(ON)|—|151|195|mΩ|VGS= 4.5V,ID= 300mA|
|||—|190|260||VGS= 2.5V,ID= 250mA|
|||—|247|380||VGS= 1.8V,ID= 100mA|
|||—|316|520||VGS= 1.5V,ID= 50mA|
|Forward Transfer Admittance||Yfs||40|—|—|mS|VDS= 3V,ID= 30mA|
|Diode Forward Voltage|VSD|—|0.7|1.2|V|VGS= 0V,IS= 300mA|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|—<br>~~——~~|67.6<br>~~——~~|135.2<br>~~——~~|pF<br>~~——~~|VDS= 20V, VGS= 0V,<br>f = 1.0MHz<br>~~——~~<br>~~ee~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|—<br>~~——~~|9.7<br>~~——~~|19.4<br>~~——~~|pF<br>~~——~~||
|Reverse Transfer Capacitance<br>~~——~~<br>~~——~~|Crss<br>~~——~~|—<br>~~——~~|7.5<br>~~——~~|15<br>~~——~~<br>~~e~~|pF<br>~~——~~<br>~~e~~||
|Gate Resistance<br>~~——~~<br>~~——~~|Rg<br>~~——~~|—<br>~~——~~|70<br>~~——~~|140<br>~~——~~<br>~~e~~|Ω<br>~~——~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~——~~<br>~~ee~~|
|Total Gate Charge<br>~~——~~|Qg|—|1.6|3.2<br>~~e~~|nC<br>~~e~~|VGS= 4.5V, VDS= 15V,<br>ID= 1A<br>~~ee~~<br>~~eee~~|
|Gate-Source Charge<br>~~——~~|Qgs|—|0.2|0.4<br>~~e~~|nC<br>~~e~~||
|Gate-Drain Charge<br>~~——~~<br>~~—<—<—<_~~|Qgd|—|0.2|0.4<br>~~e~~<br>~~eee~~|nC<br>~~e~~<br>~~eee~~||
|Turn-On DelayTime<br>~~——~~<br>~~—<—<—<_~~|tD(ON)|—|3.5|10<br>~~e~~<br>~~eee~~|ns<br>~~e~~<br>~~eee~~|VDS= 10V, ID = 1A<br>VGS= 10V, RG= 6Ω<br>~~ee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~——~~<br>~~—<—<—<_~~|tR|—|2.8|10<br>~~e~~<br>~~eee~~|ns<br>~~e~~<br>~~eee~~||
|Turn-Off DelayTime<br>~~—<—<—<_~~|tD(OFF)|—|38|60<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off Fall Time<br>~~—<—<—<_~~|tF|—|13|25<br>~~eee~~|ns<br>~~eee~~||



Note: 8. Short duration pulse test used to minimize self-heating effect. 

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2.0<br>VGS = 4.5V<br>VGS = 2.5V<br>VGS = 2.0V<br>1.5 V GS  = 1.8V<br>VGS = 1.5V<br>1.0 Aum|—<br>0.5<br>‘Se<br>VGS = 1.2V<br>0<br>0 Jannnennne 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 3 Typical Output Characteristic<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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2.0<br>V     = 5VDS<br>[A)] (T 1.5<br>[N] E<br>R<br>R<br>U<br>C 1.0<br>[IN] A<br>R<br>D<br>, D<br>I 0.5 T   = 150°CA<br>T   = 125°CA T   = 85°CA<br>T   = 25°CA<br>T   = -55°CA<br>0<br>0 0.5 yx 1 1.5 2 y 2.5 3<br>V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 4 Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMN2300UFL4** 

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0.4 ) 0.8<br>(<br>EC V     = 4.5VGS<br>N<br>T [A]<br>0.3 0.6<br>I [S] S<br>E<br>- [R]<br>O [N]<br>E<br>0.2 C 0.4<br>VGS = 2.5V R<br>O [U]<br>VGS = 4.5V - [S] T   = 125°CA T   = 150°CA<br>I [N] A<br>0.1 R 0.2<br>D T   = 85°CA<br>, ) T   = 25°CA<br>O [N] (S T   = -55°CA<br>D<br>0 HI R 0 —_ _S<br>0 0.4 0.8 1.2 1.6 2 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 5  Typical On-Resistance  Fig. 6 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 0.8<br>VGS = 4.5V<br>1.4 I D  = 1.0A<br>0.6<br>VGS = 2.5V<br>ID = 500mA<br>1.2 A<br>oot<br>0.4<br>1.0<br>VGS = 2.5V<br>EEEUAEEE ID = 500mA<br>0.2<br>0.8<br>pZAnniie VGS = 4.5V<br>ID = 1.0A<br>0.6 0<br>-50 PLE -25 0  E 25 50 LE 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE ((°C)  癈 ) TA, AMBIENT TEMPERATURE ((°C)  癈 )<br>Fig. 7 On-Resistance Variation with Temperature Fig. 8 On-Resistance Variation with Temperature<br>1.2 2.0<br>)( [V]<br>1.0<br>G [E] |) 1.6 EEE<br>[LTA] O<br>V 0.8 I    = 1mAD<br>[LD] O 1.2 TA = 25°C TA = 25 癈<br>HSE 0.6 a I    = 250µAD e aee<br>R<br>0.8<br>T [H]<br>0.4<br>T [E] sss FEEHEE<br>G [A]<br>, 0.2 0.4<br>G [S(TH)]<br>V ttt LAL<br>0 0<br>-50 -LELEL -25 0 25 50 75  LE 100 125 150 0 a 0.2 0.4 0.6 ae 0.8 1.0 1.2<br>T  , AMBIENT TEMPERATURE (°C)A VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 9 Gate Threshold Variation vs. Ambient Temperature Fig. 10 Diode Forward Voltage vs. Current<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DSON<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>**----- End of picture text -----**<br>


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DMN2300UFL4 Datasheet number: DS35946  Rev. 4 - 2 

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© Diodes Incorporated 

**DMN2300UFL4** 

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1,000 === 100,000 ==<br>T   = 125°CA<br>) ) 10,000<br>te ey eI |<br>N [T(nA] 100 [nA] (N [T] T   = 125°CA T   = 150°CA<br>-| ff] |} |] a ——<br>1,000<br>———_——_—— SSS ==<br>C [URRE] G [E] AK |——| ft T   = 85°CA [| | ft C [URRE] G [E] AK 100 e | D e T   = 85°CT   = 25°CA L A<br>A A<br>10 T   = 25°CA<br>jt yt  t y Le OLee<br>,I [LE] D [SS] T   = -55°CA , [LE] I G [SS] 10 T   = -55°CA<br>=== S= SS> —<br>a —<br>1 1<br>2 PTT 4 6 TTT 8 10 12  TTT 14 16 18 20 2 =F 4 6 FF 8 10 12<br>V    , DRAIN-SOURCE VOLTAGE (V) DS V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 11 Typical Leakage Current  Fig.12 Leakage Current vs. Gate-Source Voltage<br>vs. Drain-Source Voltage<br>, LEAKAGE CURRENT (nA)  , LEAKAGE CURRENT (nA)<br>IDSS IGSS<br>**----- End of picture text -----**<br>


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1000   8<br>f = 1MHz<br>a 6 V DS = 15V / |<br>100   Ciss  ID = 1A<br>S ——eEEReaaEs S 4 Cy écn<br>Coss<br>10<br>SSSeL EEE<br>Crss  2<br>pe vA<br>aeeee<br>1   PEt; TTT Tt yy 0<br>0 0.5 1 1.5 2 2.5 3<br>0  4  8  12  16  20<br>eee VDS, DRAIN-SOURCE VOLTAGE (V)  =  AT Fig. 13 Gate-Charge CharacteristicsQQgg, TOTAL GATE CHARGE (nC) , TOTAL GATE CHARGE (nC)<br>Fig. 13 Typical Junction Capacitance  Fig. 14 Gate-Charge Characteristics<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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DMN2300UFL4 Datasheet number: DS35946  Rev. 4 - 2 

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**DMN2300UFL4** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X2-DFN1310-6** 

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A3<br>A1<br>A<br>Seating Plane<br>D<br>D2<br>z b f f<br>jr<br>E2<br>E(Pin #1 ID)<br>d<br>L<br>| Sa |<br>f d z<br>f e<br>yes 4 —<br>R0.150<br>**----- End of picture text -----**<br>


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X2-DFN1310-6<br>Dim  Min  Max  Typ<br>A  -  0.40 -<br>A1  0 0.05 0.02<br>A3  -  -  0.13<br>b  0.10  0.20  0.15<br>D  1.25  1.38  1.30<br>d  -  -  0.25<br>——<br>D2  0.30  0.50  0.40<br>E  0.95  1.075  1.00<br>e  -  -  0.35<br>E2  0.30  0.50  0.40<br>f  -  -  0.10<br>——— L  0.20 0.30 0.25<br>Z  -  -  0.05<br>rs All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X2-DFN1310-6** 

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G2 X2<br>Y2<br>G1<br>b<br>mie<br>Y1<br>og: a X1<br>G3<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Dimensions**<br>**G1**|**Value()**<br>0.16|
|**G2**|0.17|
|**G3**<br>**X1**|0.15<br>0.52|
|**X1**|0.52|
|**X2**|0.20|
|**Y1**|0.52|
|**Y2**|0.375|
|**a**|0.09|
|**b**|0.06|



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DMN2300UFL4 Datasheet number: DS35946  Rev. 4 - 2 

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**DMN2300UFL4** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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DMN2300UFL4 Datasheet number: DS35946  Rev. 4 - 2 

June 2019 © Diodes Incorporated