DMN2041UVT-7

**DMN2041UVT** f 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) MAX**|**ID MAX**<br>**TA = +25°C**|
|20V|28m@ VGS= 4.5V|5.8A|
||32m@ VGS= 2.5V|5.4A|



## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Backlighting 

- DC-DC Converters 

- Power Management Functions 

## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

- **https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: TSOT26 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 © **e3** 

- Weight: 0.013 grams (Approximate) 

TSOT26 

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Top View Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging **|
|DMN2041UVT-7|TSOT26|3000 /Tape &Reel|
|DMN2041UVT-13|TSOT26|10000 /Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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HD3 YM<br>**----- End of picture text -----**<br>


HD3 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: G = 2019) M = Month (ex: 9 = September) 

Date Code Key 

|Date Code Keyy|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2019**|||**2020**|**2021**|||**2022**|**2023**|||**2024**|**2025**|**2025**||**2026**|
|**Code**|G|||H|I|||J|K|||L|M|||N|
||||||||||||||||||
|**Month**|**Jan**|**Feb**||**Mar**|**Apr**|**May**||**Jun**|**Jul**|**Aug**||**Sep**|**Oct**|**Nov**||**Dec**|
|**Code**|1|2||3|4|5||6|7|8||9|O|N||D|



October 2019 © Diodes Incorporated 

1 of 7 **www.diodes.com** 

DMN2041UVT Document number: DS41720 Rev. 2 - 2 

**DMN2041UVT** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C|ID|5.8|A|
|||TA= +70°C||4.6||
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|1.3|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|36|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|1.1|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|113|°C/W|
|Total Power Dissipation(Note 6)||PD|0.92|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|87|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~_——_——————————~~|**Symbol**<br>~~_——_——————————~~|**Min**<br>~~_——_——————————~~|**Typ**<br>~~_——_——————————~~|**Max**<br>~~_——_——————————~~|**Unit**<br>~~_——_——————————~~|**Test Condition**<br>~~_——_——————————~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~_——_——————————~~|||||||
|Drain-Source Breakdown Voltage<br>~~_——_——————————~~|BVDSS<br>~~_——_——————————~~|20<br>~~_——_——————————~~|—<br>~~_——_——————————~~|—<br>~~_——_——————————~~|V<br>~~_——_——————————~~|VGS= 0V,ID= 250A<br>~~_——_——————————~~|
|Zero Gate Voltage Drain Current                TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1.0<br>~~ee~~|A<br>~~ee~~|VDS= 20V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±8V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~QO~~<br>~~QO~~|||||||
|Gate Threshold Voltage<br>~~GN~~|VGS(TH)<br>~~GN~~|0.4<br>~~GN~~<br>~~QO~~|—<br>~~GN~~<br>~~QO~~|0.9<br>~~GN~~<br>~~QO~~|V<br>~~GN~~<br>~~QO~~|VDS= VGS,ID= 250A<br>~~GN~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~QO~~<br>~~ee ~~|17<br>~~QO~~<br>|28<br>~~QO~~<br>~~——~~|mΩ<br>~~QO~~<br>~~——~~|VGS= 4.5V, ID= 8.2A<br>~~——~~|
||||22<br>|32<br>~~——~~||VGS= 2.5V, ID= 3.3A<br>~~——~~|
||||32<br>|40<br> ~~——~~||VGS= 1.8V, ID= 2.0A<br>~~——~~|
|Diode Forward Voltage|VSD|—|0.7|0.9|V|VGS= 0V,ID= 2.25A|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|689<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 10V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|89<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|79<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance|Rg|—|1.05|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge<br>~~ee~~|Qg<br>~~ee~~|—<br>~~ee~~|9.1<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|VGS= 4.5V, VDS= 10V, ID= 8.2A<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~|—<br>~~ee~~|0.3<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~ee~~<br>~~—<——~~|Qgd<br>~~ee~~<br>~~—<——~~|—<br>~~ee~~|2.1<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~ee~~<br>~~—<——~~|tD(ON)<br>~~ee~~<br>~~—<——~~|—<br>~~ee~~|9<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDS= 10V, VGS= 4.5V,<br>RL= 10, Rg= 6, ID= 1A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—<——~~|tR<br>~~—<——~~|—|21|—|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<——~~|tD(OFF)<br>~~—<——~~|—|32|—|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<——~~|tF<br>~~—<——~~|—|17|—|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

October 2019 © Diodes Incorporated 

2 of 7 **www.diodes.com** 

DMN2041UVT Document number: DS41720 Rev. 2 - 2 

**DMN2041UVT** 

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30.0<br> VGS = 2.5V<br>25.0    VGS = 3.0V<br> VGS = 3.5V<br>20.0    VGS = 2.0V<br> VGS = 4.5V<br>15.0   ba<br>[ oo  VGS=1.8V<br>10.0<br>L -—<br> VGS = 1.3V   VGS = 1.4V   VGS = 1.5V<br>5.0<br>0.0<br>0  0.5  1  1.5  2  2.5  3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>0.039<br>0.034   VGS = 1.8V<br>SEQgeenne<br>0.029<br>f= a e<br>0.024   VGS = 2.5V<br>0.019<br>0.014  A  VGS = 4.5V<br>0.009<br>PET EEL ELE<br>0.004  PETE ELL EEL<br>0  1  2  3  4  5  6  7  8  9  10<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>0.04<br>0.035  VGS = 4.5V<br>TJ=150 ℃<br>0.03<br>0.025  TJ=125 ℃<br>0.02  TJ=85 ℃<br>0.015  TJ=25 ℃<br>0.01  TJ=-55 ℃<br>0.005<br>0<br>0  5  10  15  20<br>ID, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>()<br>,  DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature 

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20<br>VDS = 5V<br>15<br>10<br>|<br>TJ=125 ℃<br>| 5  | TJ=85 ℃<br>TJ=150 ℃ TJ=25 ℃<br>TJ=-55 ℃<br>0<br>0  1  2  3<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.1<br>0.09<br>0.08  ID = 2A<br>ee<br>0.07  ID = 3.3A<br>ons —<br>0.06  ID = 8.2A<br>0.05<br>0.04<br>0.03  S S<br>0.02<br>0.01  ,<br>0  es<br>0  2  4  6  8<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.2<br>2<br>1.8  Se ars  VGS = 4.5V, ID = 8.3A<br>FE ELS<br>1.6<br> VGS = 2.5V, ID = 3.3A<br>1.4  ea <a<br>1.2<br>1  Se<br> VGS = 1.8V, ID = 2A<br>0.8  s o<br>0.6  rt et | cE cE<br>-50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.05<br> VGS = 1.8V, ID = 2A<br>0.04   VGS = 2.5V, ID = 3.3A  —— |<br>0.03<br>0.02  ><a<br> VGS = 4.5V, ID = 8.3A<br>0.01<br>0  ae<br>-50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction<br>Temperature<br>)<br>(<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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20  }<br>VGS = 0V<br>15  |<br>10  ||<br>TJ = 85 ℃<br>5  TJ = 125 ℃ Hi TJ = 25 ℃<br>TJ = 150 ℃<br>TJ = -55 ℃<br>y<br>0  Z<br>0  0.3  0.6  0.9  1.2  1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>10<br>8<br>6<br>4  VDS = 10V, ID = 8.2A<br>2<br>0<br>0  5  10  15  20<br>Qg (nC)<br>Figure 11. Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1.5<br>1<br>ID = 1mA<br>SS<br>0.5  ID = 250μA<br>i lib<br>0<br>-50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>10000   es f=1MHz<br>= ——{$_————<br>eE e aeeee<br>1000   Ciss<br>Re eese<br>NO<br>Coss<br>100   Ss<br>I<br>Crss<br>ee<br>10   ee ee ee ee<br>0  5  10  15  20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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100<br>PfPON RDS(ON)   fb Limited  peneON YA.fy PWP =10ms W =1ms  acLE<br>10  PW =100µs<br>HSE SNR TNEel<br>1<br>PW =100ms<br>| PW =1s  St,SE ee<br>SSN ERBall<br>0.1  TJ(Max) = 150 ℃<br>TSingle Pulse C = 25 ℃ PW<br>DUT on 1*MRP Board  DC<br>VGS= 4.5V  aanil CreteLTT<br>0.01<br>0.1  1  10  100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMN2041UVT** 

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1<br>i= anti<br>D=0.7<br>D=0.5<br>C T ge<br>C T<br>D=0.3<br>ek LTTE TIL Leav | SUT TANE TCA EITM TT<br>0.1  S eElie D=0.9  cL LAU ETTUT<br>D=0.1<br>ee _PO<br>ee a a |<br>D=0.05<br>Fr eee HHK EE EHR SE HH<br>ae  N ao<br>A \ D=0.02  ALERT CETTE CETTE TITLE<br>0.01  gy D=0.01  ETAT<br>HK ETT TLE TTT TTI<br>D=0.005<br>A ey aeee a ase af a eh 2h TT<br>7T l<br>D=Single Pulse  RθJA(t) = r(t) * RθJA<br>Fane cea CTH HTT RθJA = 113.1 ℃ /W  al<br>Duty Cycle, D = t1 / t2<br>0.001<br>1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000  10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN2041UVT** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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TSOT26<br>D<br>e1 0 1(4x)<br>TSOT26<br>E1/2 Dim  Min  Max  Typ<br>E/2 A    1.00  <br>A1  0.010  0.100  <br>E1 E c A2  0.840  0.900  <br>Gauge Plane D  2.800 3.000 2.900<br>0 E  2.800 BSC<br>Seating Plane E1  1.500 1.700 1.600<br>L b 0.300  0.450  <br>L2<br>Fh, c 0.120  0.200  <br>e b 0 1(4x) e  0.950 BSC<br>e1  1.900 BSC<br>A2<br>L  0.30  0.50  <br>A1 L2  0.250 BSC<br>A θ  0°  8°  4°<br>Seating Plane θ1  4°  12°  <br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TSOT26** 

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C<br>Dimensions Value (in mm)<br>C  0.950<br>Y1 ie X  0.700<br>Y  1.000<br>Y1  3.199<br>Y<br>X<br>OOo: ==<br>**----- End of picture text -----**<br>


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**DMN2041UVT** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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