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DMN2040LTS-13
Dual MOSFET, N Channel, 20 V, 20 V, 6.7 A, 6.7 A, 0.026 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSSOP
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 890mW
- Power Dissipation P Channel: 890mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 6.7A
- Continuous Drain Current Id P Channel: 6.7A
- Drain Source On State Resistance N Channel: 0.026ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.132 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
| **==> picture [524 x 326] intentionally omitted <==** **----- Start of picture text -----**<br> DMN2040LTS<br>DIODES &. DUAL N-CHANNEL ENHANCEMENT MODE MOSFET so<br>Please click here to visit our online spice models database.<br>Features Mechanical Data<br>• Dual N-Channel MOSFET • Case: TSSOP-8L<br>• Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound.<br>• Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0<br>• Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020<br>• Fast Switching Speed • Terminal Connections: See Diagram Below<br>• Low Input/Output Leakage • Marking Information: See Page 4<br>• Lead Free By Design/RoHS Compliant (Note 1) • Ordering Information: See Page 4<br>• "Green" Device (Note 2) • Weight: 0.039 grams (approximate)<br>• Qualified to AEC-Q101 Standards for High Reliability<br>D1 D2<br>G1 G2<br>1 D D 8<br>2 S1 S2 7<br>3 S1 S2 6<br>4 G1 G2 Please 5 click here tovisit S1 o uronlinespicemode S2 ls database.<br>TOP VIEW BOTTOM VIEW Top View Internal Schematic<br>Pin Configuration<br>**----- End of picture text -----**<br> ## **Maximum Ratings** @TA = 25°C unless otherwise specified |**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---| ||||||| |**Characteristic **|||**Symbol **|**Value **|**Unit **| |Drain-Source Voltage|||VDSS|20|V| |Gate-Source Voltage|||VGSS|±12|V| |Continuous Drain Current (Note 3)|Steady<br>State|TA= 25°C<br>TA= 70°C|ID|6.7<br>4.9|A| |Pulsed Drain Current(Note 4)|||IDM|30|A| ## **Thermal Characteristics** |**Thermal Characteristics**|||| |---|---|---|---| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Power Dissipation (Note 3)|PD|0.89|W| |Thermal Resistance,Junction to Ambient@TA= 25°C|RθJA|140|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C| - Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. 1 of 6 **www.diodes.com** DMN2040LTS Document number: DS31941 Rev. 2 - 2 October 2009 © Diodes Incorporated **DMN2040LTS** ## **Electrical Characteristics** @TA = 25°C unless otherwise specified |**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFFCHARACTERISTICS (Note 5) **||||||| |Drain-Source Breakdown Voltage|BVDSS|20|-|-|V|VGS= 0V,ID= 250μA| |Zero Gate Voltage Drain Current<br>~~———~~|IDSS<br>~~———~~|-<br>|-<br>~~a~~|1.0<br>~~a~~|μA<br>~~a~~|VDS= 20V,VGS= 0V<br>~~a~~| |Gate-Source Leakage<br>~~———~~|IGSS<br>~~———~~|-<br>|-<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS= ±12V,VDS= 0V<br>~~a~~| |**ON CHARACTERISTICS (Note 5) **<br>~~———a~~||||||| |Gate Threshold Voltage<br>~~———~~|VGS(th)<br>~~———~~|0.5<br>|-<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|VDS= VGS,ID= 250μA<br>~~a~~| |Static Drain-Source On-Resistance<br>~~———~~|RDS (ON)<br>~~———~~|-<br>|19<br>26<br>~~a~~|26<br>36<br>~~a~~|mΩ<br>~~a~~|VGS= 4.5V,ID= 6.0A<br>~~a~~| |||||||VGS= 2.5V,ID= 5.2A<br>~~a~~| |Forward Transfer Admittance<br>~~———~~||Yfs|<br>~~———~~|-<br>|8<br>~~a~~|-<br>~~a~~|S<br>~~a~~|VDS= 10V,ID= 6A<br>~~a~~| |Diodes Forward Voltage<br>~~———~~|VSD<br>~~——— ~~|-<br>|0.7<br> ~~a~~|1.2<br>~~a~~|V<br>~~a~~|Is = 1.7A,VGS= 0V<br>~~a~~| |**DYNAMIC CHARACTERISTICS (Note 6)**<br>~~ee~~||||||| |Input Capacitance<br>~~———~~|Ciss<br>~~———~~<br>~~ee~~|-<br>~~———~~<br>~~ee~~|570<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~| |Output Capacitance<br>~~———~~|Coss<br>~~———~~<br>~~ee~~|-<br>~~———~~<br>~~ee~~|85<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|| |Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~ee~~|-<br>~~———~~<br>~~ee~~|75<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|| |Gate Resistance<br>~~———~~<br>~~—~~|Rg<br>~~———~~<br>~~ee~~|-<br>~~———~~<br>~~ee~~|1.23<br>~~———~~|-<br>~~———~~<br>~~e~~|Ω<br>~~———~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~ee~~| |**SWITCHING CHARACTERISTICS(Note 6)**<br>~~ee~~<br>~~—~~<br>~~ee~~||||||| |Total Gate Charge<br>~~—~~|Qg|-|5.2|-<br>~~e~~|nC<br>~~e~~|VGS= 4.5V, VDS= 10V,<br>ID= 7A<br>~~ee~~<br>~~ee~~| |Gate-Source Charge<br>~~—~~|Qgs|-|0.86|-<br>~~e~~|nC<br>~~e~~|| |Gate-Drain Charge<br>~~—~~<br>~~————~~|Qgd|-|1.25|-<br>~~e~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~|| |Turn-On DelayTime<br>~~—~~<br>~~————~~|tD(on)|-|5.2|-<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= 10V, VGS= 4.5V,<br>RL= 1.5Ω, RG= 1Ω<br>~~ee~~<br>~~ee~~| |Turn-On Rise Time<br>~~—~~<br>~~————~~|tr|-|13.5|-<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|| |Turn-Off DelayTime<br>~~————~~|tD(off)|-|19.8|-<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~————~~|tf|-|6.1|-<br>~~ee~~|ns<br>~~ee~~|| Notes: 5. Short duration pulse test used to minimize self-heating effects. 6. Guaranteed by design. Not subject to production testing. **==> picture [204 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>VGS = 10.0V<br>VGS = 4.5V<br>15 VGS = 3.0V<br>VGS = 2.5V VGS = 2.0V<br>10<br>5<br>VGS = 1.5V<br>0 ail<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [202 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>V DS = 5V<br>16<br>12<br>8<br>T A = 150°C<br>TA = 125°C<br>4 T A = 85°C TA = 25°C<br>T A = -55°C<br>0<br>0 1 2 3 4<br>VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 2 of 6 **www.diodes.com** DMN2040LTS Document number: DS31941 Rev. 2 - 2 October 2009 © Diodes Incorporated **DMN2040LTS** **==> picture [478 x 661] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1 0.06<br>V GS = 4.5V<br>V GS = 1.8V 0.04<br>J<br>TA = 150°C<br>VGS = 2.5V TA = 125°C<br>VGS = 4.5V 0.02 TA = 85°C<br>SE TA = 25°C<br>VGS = 8.0V TA = -55°C<br>0.01 0<br>0 4 8 12 16 20 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.06<br>1.4<br>VGS = 4.5V 0.04<br>1.2 I D = 5A<br>VGS = 10V<br>ID = 10A<br>1.0 VGS = 4.5V<br>I D = 5A<br>0.8 HLA 0.02 _——— VIGSD = 10A = 10V<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>1.6 20<br>1.4<br>16<br>1.2<br>1.0<br>12 T A = 25°C<br>0.8 I D = 1mA<br>8<br>0.6 I D = 250µA<br>0.4<br>4<br>0.2<br>0 i 0 |<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> 3 of 6 DMN2040LTS Document number: DS31941 Rev. 2 - 2 October 2009 © Diodes Incorporated **www.diodes.com** **DMN2040LTS** | **==> picture [479 x 451] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000 10,000<br>TA = 150 ° C<br>800 f = 1MHz<br>1,000<br>T A = 125°C<br>600<br>KEE eee<br>Ciss 100<br>400<br>T A = 85°C<br>10 TA = -55°C<br>200<br>Coss T A = 25°C<br>0 K Crss t| 1 e ere<br>0 5 10 15 20 0 4 8 12 16 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>1<br>D = 0.7<br>D = 0.5 a<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.9<br>D = 0.05<br>RθJA(t) = r(t) * RθJA<br>D = 0.02 RθJA = 133°C/W<br>0.01<br>D = 0.01 P(pk)<br>t1<br>D = 0.005 t2<br>T J - T A = P * R θJA (t)<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>C, CAPACITANCE (pF)<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 7) |**Ordering Informationg Information Information** (Note 7)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMN2040LTS-13|TSSOP-8L|2500 /Tape &Reel| Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. ## **Marking Information** **==> picture [141 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> 8 5<br>Logo<br>N2040L Part no<br>YY WW Xth week: 01~52<br>Year: “09” = 2009<br>1 4<br>Top View<br>**----- End of picture text -----**<br> **==> picture [71 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> 4 of 6<br>www.diodes.com<br>**----- End of picture text -----**<br> DMN2040LTS Document number: DS31941 Rev. 2 - 2 October 2009 © Diodes Incorporated **DMN2040LTS** ## **Package Outline Dimensions** **==> picture [316 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |D| |TSSOP-8L| |Dim|Min|Max|Typ| |See Detail C|a|0.09|−|−| |E|A|−|1.20|−| |E1|A1|0.05|0.15|−| |A2|0.825|1.025|0.925| |b|0.19|0.30|−| |c|0.09|0.20|−| |D|2.90|3.10|3.025| |e|c|e|−|−|0.65| |b|E|−|−|6.40| |Gauge plane| |E1|4.30|4.50 4.425| |A|A2|a|L|0.45|0.75|0.60| |D|A1|L|All Dimensions in mm| |Detail C| **----- End of picture text -----**<br> ## **Suggested Pad Layout** **==> picture [71 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> Y<br>X<br>C3 C1<br>C2<br>G<br>-<br>**----- End of picture text -----**<br> **==> picture [105 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Dimensions|Value|(in mm)| |X|0.45| |Y|1.78| |C1|7.72| |C2|0.65| |C3|4.16| |G|0.20| **----- End of picture text -----**<br> 5 of 6 **www.diodes.com** DMN2040LTS Document number: DS31941 Rev. 2 - 2 October 2009 © Diodes Incorporated **DMN2040LTS** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated **www.diodes.com** 6 of 6 **www.diodes.com** DMN2040LTS Document number: DS31941 Rev. 2 - 2 October 2009 © Diodes Incorporated
Updated at June 9, 2026
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