DMN2024UVTQ-7

## **DMN2024UVTQ** fe 

## **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID**<br>**TA = +25°C**|
|20V|24mΩ @ VGS= 4.5V|7A|
||28mΩ @ VGS= 2.5V|5A|



## **Features and Benefits** 

- Low On-Resistance 

- Low-Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: 

- Backlighting 

- DC-DC Converters 

- Power Management Functions 

- **The DMN2024UVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: TSOT26 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram 

- Terminals: Finish—Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 © **e3** 

- Weight: 0.013 grams (Approximate) 

ESD Protected Gate 

TSOT26 

Top View 

Equivalent Circuit 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging **|
|DMN2024UVTQ-7|TSOT26|3,000/Tape &Reel|
|DMN2024UVTQ-13|TSOT26|10,000/Tape &Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
AR4 YM<br>**----- End of picture text -----**<br>


AR4 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M = Month (ex: 9 = September) 

Date Code Key 

|Date Code Key|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2020**|**2021**|**2022**|**2023**|**2024**|**2025**|**2026**|**2027**|**2028**|**2029**|**2030**|**2031**|
|**Code**|H|I|J|K|L|M|N|O|P|R|S|T|
||||||||||||||
|**Month**|**Jan**|**Feb**|**Mar**|**Apr**|**May**|**Jun**|**Jul**|**Aug**|**Sep**|**Oct**|**Nov**|**Dec**|
|**Code**|1|2|3|4|5|6|7|8|9|O|N|D|



1 of 7 **www.diodes.com** 

DMN2024UVTQ Document number: DS42664  Rev. 2 - 2 

May 2021 

© Diodes Incorporated 

**DMN2024UVTQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±10|V|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady State|TA= +25°C<br>TA= +70°C|ID|7.0<br>5.0|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|2.3|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|35|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|1.0|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RϴJA|124|°C/W|
|Total Power Dissipation(Note 6)||PD|1.6|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RϴJA|78|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25 **°** C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25A = +25= +25**°**C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25A = +25= +25**°**C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25A = +25= +25**°**C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25A = +25= +25**°**C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25A = +25= +25**°**C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25A = +25= +25**°**C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25A = +25= +25**°**C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current                TJ= +25°C|IDSS|—|—|1.0|µA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage<br>~~oe~~|IGSS<br>~~oe~~|—<br>~~oe~~|—<br>~~oe~~|±10<br>~~oe~~|µA<br>~~oe~~|VGS= ±8V,VDS= 0V<br>~~oe~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~oe~~|||||||
|Gate Threshold Voltage<br>~~oe~~|VGS(TH)<br>~~oe~~|0.5<br>~~oe~~|—<br>~~oe~~|0.9<br>~~oe~~<br>~~—~~|V<br>~~oe~~|VDS= VGS,ID= 250µA<br>~~oe~~|
|Static Drain-Source On-Resistance<br>~~oe~~<br>~~ee~~|RDS(ON)<br>~~oe~~<br>~~ee~~|—<br>~~oe~~<br>~~ee~~|19<br>~~oe~~<br>~~ee~~|24<br>~~oe~~<br>~~ee~~<br>~~—~~|mΩ<br>~~oe~~<br>~~ee~~|VGS= 4.5V,ID= 6.5A<br>~~oe~~<br>~~ee~~|
||||22<br>~~oe~~<br>~~ee~~|28<br>~~oe~~<br>~~ee~~<br>~~—~~||VGS= 2.5V, ID= 5.5A<br>~~oe~~<br>~~ee~~|
||||25<br>~~ee~~|34<br>~~ee~~<br>~~—~~||VGS= 1.8V, ID= 3.5A<br>~~ee~~|
|Diode Forward Voltage<br>~~ae~~|VSD<br>~~ae~~|—<br>~~ae~~|0.9<br>~~ae~~|1.2<br>~~—~~<br>~~ae~~|V|VGS= 0V,ID= 5A<br>~~eee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ae~~<br>~~eee~~|||||||
|Input Capacitance<br>~~ae~~<br>~~ee~~|Ciss<br>~~ae~~<br>~~ee~~|—<br>~~ae~~<br>~~ee~~|647<br>~~ae~~<br>~~ee~~|—<br>~~ae~~<br>~~ee~~|pF<br>~~ee~~|VDS= 10V, VGS= 0V<br>f = 1.0MHz<br>~~eee~~<br>~~ee~~|
|Output Capacitance<br>~~ae~~<br>~~ee~~|Coss<br>~~ae~~<br>~~ee~~|—<br>~~ae~~<br>~~ee~~|78<br>~~ae~~<br>~~ee~~|—<br>~~ae~~<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|38<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance<br>~~ee~~|Rg<br>~~ee~~|100<br>~~ee~~|400<br>~~ee~~|800<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge<br>~~ne~~|Qg<br>~~ne~~|—<br>~~ne~~|7.1<br>~~ne~~|—<br>~~ne~~|nC<br>~~ne~~|VGS= 4.5V, VDS= 10V, ID= 6.5A<br>~~ne~~<br>~~ee~~|
|Gate-Source Charge<br>~~ne~~|Qgs<br>~~ne~~|—<br>~~ne~~|0.9<br>~~ne~~|—<br>~~ne~~|nC<br>~~ne~~||
|Gate-Drain Charge<br>~~ne~~<br>~~ee~~|Qgd<br>~~ne~~<br>~~ee~~|—<br>~~ne~~<br>~~ee~~|0.7<br>~~ne~~<br>~~oe~~|—<br>~~ne~~<br>~~ee~~|nC<br>~~ne~~<br>~~ee~~||
|Turn-On DelayTime<br>~~ee~~|tD(ON)<br>~~ee~~|—<br>~~ee~~|98<br>~~oe~~|—<br>~~ee~~|ns<br>~~ee~~|VDS= 10V, VGS= 4.5V,<br>RL= 10Ω, RG= 6Ω, ID= 1A<br>~~ee~~|
|Turn-On Rise Time<br>~~ee~~<br>~~ee~~|tR<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|140<br>~~oe~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~ee~~<br>~~Ce~~|tD(OFF)<br>~~ee~~|—<br>~~ee~~|1024<br>~~oe~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~ee~~|tF<br>~~ee~~|—<br>~~ee~~|434<br>~~oe~~|—<br>~~ee~~|ns<br>~~ee~~||
|Reverse RecoveryTime<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee ~~|245<br> ~~oe ~~|—<br> ~~ee~~|ns<br>~~ee~~|IF= 1.0A,di/dt = 100A/μs<br>~~ee~~|
|Reverse RecoveryCharge|QRR|—|149|—|nC|IF= 1.0A,di/dt = 100A/μs|



- Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 

   6. Device mounted on 1” × 1” FR-4 PCB with high-coverage 2oz. copper, single sided. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMN2024UVTQ Document number: DS42664  Rev. 2 - 2 

May 2021 © Diodes Incorporated 

**DMN2024UVTQ** 

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30 VGS  = 4.5V VGS = 2.0V 15 VDS = 5.0V<br>VGS = 4.0V VGS = 1.8V<br>25<br>o VGS = 3.5V )/4aneee 12 PLLLEL LVL<br>VGS = 3.0V<br>20 VGS = 2.5V<br>9<br>15 yo TELE EL<br>VGS = 1.5V<br>Po 6<br>10<br>TA = 85°C<br>5 VGS = 1.3V 3 TA  = 125°C T A  = 25°C<br>0 VGS = 1.1V 0 TA  = 150°C TA  = -55°C<br>Yopi tt | 8B<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>50 1000<br>45 es ID = 6.5A<br>40 esee 800<br>35 es|<br>30 V GS  = 1.8V 600<br>25 V GS  = 2.5V ID = 5.5A<br>20 aE 400<br>VGS = 4.5V<br>15 SSL<br>10 es 200<br>5 es<br>ID = 3.5A<br>0 SS5EE=es 0 ae<br>0 5 10 15 20 25 30 0 2 4 6 8 10<br>ID, DRAIN-SOURCE CURRENT (A)  V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>40 2<br>VGS = 10V<br>35 1.8 V GS  = 2.5V<br>TA = 150°C ID = 5.5A<br>30 TA  = 125 ° C 1.6 V GS  = 4.5V<br>25 FFP fey TA tT  = 85°C 1.4 aan ID = 6.5A 4<br>20 T A = 25°C 1.2 V I GS D = 3.5A  = 1.8V<br>15 PTT TTI T A  = -55°C Se Aa<br>1<br>10 SeReEREeEe LK<br>0.8<br>5<br>PCE, Pee EEE<br>0.6<br>0<br>0 PL 2 4 ET 6 8 EEL 10 12 14 ELE 16 18 20 0.4 TTTEL<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 C)125 150<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br> I<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMN2024UVTQ Document number: DS42664  Rev. 2 - 2 

May 2021 © Diodes Incorporated 

**DMN2024UVTQ** 

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50<br>45<br>VGS = 1.8V<br>40 I D  = 3.5A<br>So VGS = 2.5V<br>35<br>ID = 5.5A<br>ptt oe<br>30<br>Se<br>25<br>esa<br>20 VGS = 4.5V<br>tee Tt<br>15 I D  = 6.5A<br>= ao<br>10<br>5 SeReEean<br>0<br>ee<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature<br>20<br>18 |<br>16<br>ees an<br>14<br>12 ee<br>10<br>ee TA = 85°C ///<br>8<br>TA  = 125°C<br>s/o/}/<br>6<br>TA = 25°C<br>4 T A  = 150°C<br>2 —t FR<br>TA = -55°C<br>0 ey<br>0 0.3 0.6 0.9 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current<br>10<br>9<br>8<br>7<br>6<br>5 V DS  = 10V<br>ID = 6.5A<br>4<br>3<br>4<br>2<br>1<br>0 ee<br>0 3 6 9 12 15<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate Charge<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>S<br>, SOURCE CURRENT (A)<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1.2<br>1<br>SERREEEE<br>0.8<br>“SERRE<br>ID = 1mA<br>0.6 casa I D  = 250µA<br>ee<br>7 -™:<br>0.4<br>SS<br>0.2<br>tii TER<br>0<br>EE EET LE<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 8 Gate ThreshFigure 8 Gate Thresh old Va rr iat ii o n vs. Ambient Temperaturen vs. Junction Temperature<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


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10000<br>C iss<br>————<br>=<br>C oss<br>se<br>1000<br>NER<br>e Se C rss<br>a<br>100 [ttt f=1MHz f<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>100 RDS(on)<br>Limited<br>P W  = 100µs<br>10<br>DC<br>1 P W  = 10s<br>PW = 1s<br>PW = 100ms<br>PW = 10ms<br>0.1 ORR PW = 1ms<br>TTJC( = 25max) = 150°C °C<br>VGS  = 4.5V<br>Single Pulse<br>DUT on 1*MRP Board<br>0.01<br>0.1 1 SHH 10 St 100<br>-VVDSDS, DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br> A<br>E<br> UR<br>I<br>D,<br>) A<br>(<br>NT<br>E<br>R<br>UR<br>C<br>N I DRA<br>,<br>I -D<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMN2024UVTQ Document number: DS42664  Rev. 2 - 2 

May 2021 © Diodes Incorporated 

**DMN2024UVTQ** 

**==> picture [430 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.9<br>ST D = 0.7 tea eer Oe<br>bE D = 0.5 HTT TTT<br>D = 0.3 ee<br>HFA TUMT CLLLAeA TTT<br>0.1<br>D = 0.1<br>Eat tC<br>TT D = 0.05 Oe<br>LE OP<br>D = 0.02<br>TTT TIPTREE EH<br>0.01 NeLAMa D = 0.01 A eeeetlAY A7AametTIT LTEEE8ITNTEe LT<br>SsT D = 0.005 e eeOZiat eee eee a ems ee ee<br>A R JA (t) = r(t) * RJA |<br>D = Single Pulse R JA  = 1.1°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMN2024UVTQ Document number: DS42664  Rev. 2 - 2 

May 2021 © Diodes Incorporated 

**DMN2024UVTQ** | 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [33 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
TSOT26<br>**----- End of picture text -----**<br>


||||||||||D|D||||||||||||||||||||||**TSOT26**|**TSOT26**||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|E1<br>E1/2||||||||e|e1|||b||||E/2|||E||~~0~~<br>L2<br>L<br>~~0~~1( 4x)<br>~~0~~1( 4x)<br>c<br>~~fe~~||||||||Seating Plane<br>Gauge Plane|**Dim**<br>**A**<br>**A1**<br>**A2**<br>**D**<br>**E**<br>**E1**<br>**b**<br>**c**<br>**e**<br>**e1 **<br>**L**<br>**L2**||**Min**<br>**Max **<br>**Typ**<br><br>1.00<br><br>0.010<br>0.100<br><br>0.840<br>0.900<br><br>2.800<br>3.000<br>2.900<br>2.800BSC<br>1.500<br>1.700<br>1.600<br>0.300<br>0.450<br><br>0.120<br>0.200<br><br>0.950BSC<br>1.900BSC<br>0.30<br>0.50<br><br>0.250BSC|||
||||||||||||||||||||||A2|||||||||**θ**||0°|8°|4°|
|||||||||||||||||||A1||||||||||||**θ1**||4°|12°||
||A|||||||||||||||||||||||||||||**All Dimensions in mm**||**All Dimensions in mm**|||
||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||Seating Plane||||||||||||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TSOT26** 

C Y1 ~~in~~ Y X ~~OOo~~ 

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**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C  0.950<br>X  0.700<br>Y  1.000<br>Y1  3.200<br>**----- End of picture text -----**<br>


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DMN2024UVTQ Document number: DS42664  Rev. 2 - 2 

May 2021 © Diodes Incorporated 

**DMN2024UVTQ** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

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