DMN2004VK-7B

Dual MOSFET, N Channel, 20 V, 20 V, 540 mA, 540 mA, 0.55 ohm

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
Manufacturer: DIODES INC.
Product type: Dual MOSFETs
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Transistor Case Style: SOT-563
Operating Temperature Max: 150°C
Power Dissipation N Channel: 250mW
Power Dissipation P Channel: 250mW
Drain Source Voltage Vds N Channel: 20V
Drain Source Voltage Vds P Channel: 20V
Continuous Drain Current Id N Channel: 540mA
Continuous Drain Current Id P Channel: 540mA
Drain Source On State Resistance N Channel: 0.55ohm
Drain Source On State Resistance P Channel: -
Delivery and price
Units per pack	5000
Price	0.051 €
Current stock	1000+
Lead time	30 days
Datasheet
**DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

## **Mechanical Data** 

- Dual N-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Ultra-Small Surface Mount Package 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Case: SOT563 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminal Connections: See Diagram 

   - Terminals: Finish - Matte Tin Annealed over Copper Lead Frame.  Solderable per MIL-STD-202, Method 208 

   - Weight: 0.006 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

**==> picture [33 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT563<br>**----- End of picture text -----**<br>


ESD PROTECTED Top View Bottom View 

Internal Schematic Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN2004VK-7|SOT563|3000/Tape & Reel|
|DMN2004VK-7B|SOT563|8000/Tape & Reel(Note 5)|
|DMN2004VK-13|SOT563|10000/Tape &Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

   5. Change the pitch from 4mm to 2mm in T& R. 

## **Marking Information** 

|||||||**NAB**|**NAB**|**NAB**||**YM**|**YM**|||NAB = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)|NAB = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Date CodeKey|||||||||||||||||||
||**Year**|**2010**|**…**|**2019**|**2020**|||||**2021**||||**2022**<br>**2023**<br>**2024**|**2025**|**2026**|**2027**|**2028**|
||**Code**|X|…|G||H|||||I|||J<br>K<br>L|M|N|O|P|
||||||||||||||||||||
||**Month**|**Jan**|**Feb**|**Mar**||**Apr**||||**May**||||**Jun**<br>**Jul**<br>**Aug**|**Sep**|**Oct**|**Nov**|**Dec**|
||**Code**|1|2|3||4|||||5|||6<br>7<br>8|9|O|N|D|



1 of 6 **www.diodes.com** 

DMN2004VK Document number: DS30865 Rev. 6 - 2 

December 2019 © Diodes Incorporated 

**DMN2004VK** 

## **Maximum Ratings** (TA = +25°C, unless otherwise specified.） 

|**Maximum Ratingsgss** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））|**Maximum Ratingsgss** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|20|V|
|Gate-Source Voltage||VGSS|8|V|
|Drain Current (Note 6)                                       Steady<br>State|TA= +25°C<br>TA= +85°C|ID|540<br>390|mA|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|1.5|A|



## **Thermal Characteristics** (TA = +25°C, unless otherwise specified.） 

|**Thermal Characteristics **(TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|PD|250|mW|
|Thermal Resistance,Junction to Ambient|RJA|500|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (TA = +25°C, unless otherwise specified.） 

|**Electrical Characteristics** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））|**Electrical Characteristics** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））|**Electrical Characteristics** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））|**Electrical Characteristics** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））|**Electrical Characteristics** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））|**Electrical Characteristics** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））|**Electrical Characteristics** (TA = +25°C, unless otherwise specified.）A = +25°C, unless otherwise specified.）= +25°C, unless otherwise specified.））|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>~~———~~|20<br>~~———~~|<br>~~———~~|<br>~~———~~|V<br>~~———~~|VGS= 0V,ID= 10A<br>~~———~~|
|Zero Gate Voltage Drain Current<br>~~———~~|IDSS<br>~~———~~|<br>~~———~~|<br>~~———~~|1<br>~~———~~|A<br>~~———~~|VDS= 16V,VGS= 0V<br>~~———~~|
|Gate-Source Leakage<br>~~———~~|IGSS<br>~~———~~|<br>~~———~~|<br>~~———~~|1<br>~~———~~|A<br>~~———~~|VGS=4.5V,VDS= 0V<br>~~———~~|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage|VGS(TH)|0.5||1.0|V|VDS= VGS,ID= 250A|
|Static Drain-Source On-Resistance<br>~~eS~~|RDS(ON)<br>~~eS~~|<br>~~eS~~|0.4<br>0.5<br>0.7<br>~~eS~~|0.55<br>0.70<br>0.9<br>~~eS~~|<br>~~eS~~|VGS= 4.5V,ID= 540mA<br>~~eS~~|
|||||||VGS= 2.5V,ID= 500mA<br>~~eS~~|
|||||||VGS= 1.8V,ID= 350mA<br>~~eS~~|
|Forward Transfer Admittance<br>~~eS~~||Yfs|<br>~~eS~~|200<br>~~eS~~|<br>~~eS~~|<br>~~eS~~|ms<br>~~eS~~|VDS=10V,ID= 0.2A<br>~~eS~~|
|Diode Forward Voltage|VSD|0.5||1.4|V|VGS= 0V,IS= 115mA|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~eeen~~|||||||
|Input Capacitance<br>~~—————~~|Ciss<br>~~—————~~<br>~~ee~~|<br>~~—————~~<br>~~en~~|<br>~~—————~~<br>~~en~~|150<br>~~—————~~<br>~~en~~|pF<br>~~—————~~<br>~~en~~|VDS= 16V, VGS= 0V<br>f = 1.0MHz<br>~~—————~~|
|Output Capacitance<br>~~—————~~|Coss<br>~~—————~~<br>~~ee~~|<br>~~—————~~<br>~~en~~|<br>~~—————~~<br>~~en~~|25<br>~~—————~~<br>~~en~~|pF<br>~~—————~~<br>~~en~~||
|Reverse Transfer Capacitance<br>~~—————~~|Crss<br>~~—————~~<br>~~ee~~|<br>~~—————~~<br>~~en~~|<br>~~—————~~<br>~~en~~|20<br>~~—————~~<br>~~en~~|pF<br>~~—————~~<br>~~en~~||
|**SWITCHING CHARACTERISTICS(Note 8)**<br>~~ee en~~|||||||
|Turn-On DelayTime<br>~~ce~~|tD(ON)<br>~~ce~~|<br>~~ce~~|8.0<br>~~ce~~|<br>~~ce~~|ns<br>~~ce~~|VDD= 10V, RL= 47Ω,<br>ID= 200mA. VGEN= 4.5V,<br>RG= 10Ω<br>~~ce~~|
|Rise Time<br>~~ce~~|tR<br>~~ce~~|<br>~~ce~~|13.3<br>~~ce~~|<br>~~ce~~|ns<br>~~ce~~||
|Turn-Off DelayTime<br>~~ce~~|tD(OFF)<br>~~ce~~|<br>~~ce~~|53.5<br>~~ce~~|<br>~~ce~~|ns<br>~~ce~~||
|Fall Time<br>~~ce~~|tF<br>~~ce~~|<br>~~ce~~|36.1<br>~~ce~~|<br>~~ce~~|ns<br>~~ce~~||



2 of 6 **www.diodes.com** 

DMN2004VK Document number: DS30865 Rev. 6 - 2 

December 2019 © Diodes Incorporated 

**DMN2004VK** [| 

**==> picture [104 x 35] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIODES.<br>**----- End of picture text -----**<br>


**==> picture [213 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
06 —— - __<br>| | gg = 1.6V<br>| | on<br>|<br>Veg = 1.2V<br>0<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics<br>D<br>, DRAIN CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


**==> picture [201 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Tch, CHANNEL TEMPERATURE  ( °C癈 )<br>Fig. 3  Gate Threshold Voltage vs. Channel Temperature<br>**----- End of picture text -----**<br>


**==> picture [226 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GS  = 5V<br>Pulsed eeJee<br>¥<br>5 co 5 T A  = 150°C TA = 125°C — TA = 85°C<br>8¢ LI<br>2 M  Cr<br>{Zz ees<br>o n ee a<br>2 g  Wo<br><a DF<br>oz=6 — LI TA = -55°C<br>a<br>nd TA = 25°C TA = 0°C TA = -25°C<br>o<br>0 . 2 0 . 4 0.6 0.8 1 . 0<br>ID, DRAIN CURRENT (A)<br>Fig. 5  Static Drain-Source On-Resistance vs. Drain Current<br>**----- End of picture text -----**<br>


**==> picture [196 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 2  Reverse Drain Current vs. Source-Drain Voltage<br>**----- End of picture text -----**<br>


**==> picture [222 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 a<br>Pulsed a<br>a<br>ee ee ee ee<br>A = g5°<br>Tanase<br>T, = 150°C I Tanne’<br>————<br>————EE ee eeee<br>ae ee eS ee<br>—=<br>vee<br>0.1 Ta=25C 7-070 | T, =-25°C<br>0.2 0 . 4 0 . 6 0 . 8 1.0<br>ID, DRAIN CURRENT (A)<br>Fig. 4 Static Drain-Source On-Resistance vs. Drain Current<br>DS(on),<br><br> STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>


**==> picture [5 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMN2004VK 

December 2019 © Diodes Incorporated 

Document number: DS30865 Rev. 6 - 2 

**DMN2004VK** 

**==> picture [204 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID, DRAIN CURRENT (A)<br>Fig. 7  On-Resistance vs. Drain Current and Gate Voltage<br>**----- End of picture text -----**<br>


**==> picture [224 x 418] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000 T, = 150°C<br>100 |<br>5<br>T= 100°C<br>"0<br>4 a [|<br>qos<br>j= 28<br>0.1<br>2 4 6 8 10 12 14 16 18<br>Vpg: DRAI N- SOURCE VOLTAGE (V)<br>Fig. 9 Drain Source Leakage Current vs . Voltage<br>ee ee eeaCZeTa a<br>Eves tov S HHHOu 1,=-850Ahalert|<br>tt As | TT<br>7277<br>een e/Z7A<br>Wanlitvmanenn lll<br>WYWl Ta = 85°C<br>0 . 1  EoAY ——— 105<br>[oT ee<br>es AAA eee<br>[ 2 A<br>| [AAA [VA“] |tT<br>Arcee THT<br>V7 7iiseckae |ell<br>V/A AA IE |<br>001 1 10 100 1,000<br>ID, DRAIN CURRENT (mA)<br>Fig. 11  Forward Transfer Admittance vs. Drain Current<br>DSS<br>, DRAIN-SOURCE LEAKAGE<br>I          CURRENT (nA)<br>|, FORWARD TRANSFER  ADMITTANCE (S)<br>fs<br>|Y<br>**----- End of picture text -----**<br>


**==> picture [9 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
DR<br>, REVERSE DRAIN CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


**==> picture [211 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 0- 2 5 T , JUNCTION TEMPERATURE (j 0 25 50 75 100 °C) 125 150<br>Fig. 8  Static Drain-Source, On-Resistance vs. Temperature<br>**----- End of picture text -----**<br>


**==> picture [132 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 12  Capacitance Variation<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMN2004VK 

December 2019 

© Diodes Incorporated 

Document number: DS30865 Rev. 6 - 2 

**DMN2004VK** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT563** 

**==> picture [405 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
b<br>a 7 a<br>SOT563<br>E E1 Dim  Min  Max  Typ<br>A  0.55 0.60 0.60<br>b  0.15  0.30  0.20<br>c  0.10  0.18  0.11<br>L D  1.50  1.70  1.60<br>R.01 E  1.55  1.70  1.60<br>e E1  1.10  1.25  1.20<br>c<br>e  --  --  0.50<br>e1 e1  0.90  1.10  1.00<br>L  0.10 0.30 0.20<br>D a  8° 9° 7°<br>All Dimensions in mm<br>A<br>a<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT563** 

**==> picture [132 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
C X<br>Y<br>ag<br>Y1 G C1<br>X1<br>‘oo<br>**----- End of picture text -----**<br>


**==> picture [95 x 86] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>C  0.500<br>C1  1.270<br>G  0.600<br>X  0.300<br>X1  1.300<br>Y  0.670<br>Y1  1.940<br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMN2004VK Document number: DS30865 Rev. 6 - 2 

December 2019 © Diodes Incorporated 

**DMN2004VK** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN2004VK Document number: DS30865 Rev. 6 - 2 

December 2019 © Diodes Incorporated
Updated at June 9, 2026
About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →
Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →
Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →