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DMN1250UFEL-7
Dual MOSFET, Three N Channel, 12 V, 12 V, 2 A, 2 A, 0.45 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 12Pins
- Channel Type: Three N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: U-QFN1515
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.25W
- Power Dissipation P Channel: 1.25W
- Drain Source Voltage Vds N Channel: 12V
- Drain Source Voltage Vds P Channel: 12V
- Continuous Drain Current Id N Channel: 2A
- Continuous Drain Current Id P Channel: 2A
- Drain Source On State Resistance N Channel: 0.45ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.268 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMN1250UFEL** ~~7~~ ## **N-CHANNEL ENHANCEMENT MODE MOSFET** ## **Features** - Low Gate Charge - RDS(ON): 280mΩ @ VGS = 4.5V (Single MOSFET) - 8 N-Channel MOSFET in One Package - Common Source - Small Footprint 1.5mm × 1.5mm - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen, Antimony and Beryllium Free. “Green” Device** ## **Mechanical Data** - Case: U-QFN1515-12 - Case Material—Molded Plastic, “Green” Molding - Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Terminal Connections: See Diagram ## **(Note 3)** - Weight: 0.004 grams (Approximate) **==> picture [58 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> U-QFN1515-12<br>**----- End of picture text -----**<br> **==> picture [96 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> D8<br>D7 S<br>D6 S<br>D5<br>S<br>D1<br>S D2<br>Se G D4 D3<br>**----- End of picture text -----**<br> ## Bottom View Equivalent Circuit ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMN1250UFEL-7|U-QFN1515-12|3000/Tape &Reel| Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen, Antimony and Beryllium-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl), <1000ppm antimony compounds and <1000ppm Beryllium. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 1 of 8 **www.diodes.com** DMN1250UFEL Document number: DS37787 Rev. 7 - 2 September 2019 © Diodes Incorporated **DMN1250UFEL** ## **Marking Information** Site 1: ## **U-QFN1515-12** |||||||||||||||A1 = Product Type Marking Code|A1 = Product Type Marking Code||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||YM = Date Code Marking|||||||||| |||||||||||||||Y = Year (ex: G = 2019)|||||||||| |||||||||||||||M= Month (ex: 9 = September)|||||||||| ||Date Code Key||||||||||||||||||||||| |**Year**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**Code**<br>G<br>H<br>I<br>J<br>K<br>L<br>M<br>~~—————~~|||||||||||||||||||||||| |**Month**<br>**Code**<br>~~—~~|||**Jan**<br>1||**Feb**<br>2||**Mar**<br>**Apr**<br>3<br>4||||**May**<br>5|||**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>6<br>7<br>8<br>9|||**Oct**<br>O|||**Nov**<br>N||**Dec**<br>D|| ||Site 2:||||||||||||||||||||||| |||||||||**U-QFN1515-12**|||||||||||||||| |||||||||||||||A1 = Product Type Marking Code|||||||||| |||||||||||||||YWX = Date Code Marking|||||||||| |||||||||||||||Y = Year (ex: 9 = 2019)|||||||||| |||||||||||||||W = Week (ex: a = week 27; z represents week 52 and 53)|||||W = Week (ex: a = week 27; z represents week 52 and 53)|||W = Week (ex: a = week 27; z represents week 52 and 53)|| |||||||||||||||X = Internal Code (ex: U = Monday)|||||||||| |Date Code Key<br>**Year**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**Code**<br>9<br>0<br>1<br>2<br>3<br>4<br>5<br>**Week**<br>**1-26**<br>**27-52**<br>**53**<br>**Code**<br>A-Z<br>a-z<br>z<br>~~—~~<br>~~——————————~~|||||||||||||||||**2026**<br>6|||||**2027**<br>7|| |**Internal Code**<br>**Sun**<br>**Mon**<br>**Tue**<br>**Wed**<br>**Thu**<br>**Fri**<br>**Sat**<br>**Green**<br>T<br>U<br>V<br>W<br>X<br>Y<br>Z<br>**Lead Free**<br>t<br>u<br>v<br>w<br>x<br>y<br>z<br>~~—————————~~|||||||||||||||||||||||| 2 of 8 **www.diodes.com** DMN1250UFEL Document number: DS37787 Rev. 7 - 2 September 2019 © Diodes Incorporated **DMN1250UFEL** ## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage||VDSS|12|V| |Gate-Source Voltage||VGSS|8|V| |Drain Current (Note 6) Continuous|TA= +25°C|ID|2.0|A| ||TA= +70°C||1.6|| |Pulsed Drain Current (Note 7)||IDM|10|A| |ESD Capability (Note 10)||HBM|150|V| |||CDM|1000|V| ## **Thermal Characteristics** |**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **| |---|---|---|---| ||||| |**Characteristic**<br>~~fe~~|**Symbol**<br>~~fe~~|**Value**<br>~~fe~~|**Unit**<br>~~fe~~| |Total Power Dissipation (Note 5)<br>~~ee~~|PD<br>~~ee~~|0.66<br>~~ee~~|W<br>~~ee~~| |Total Power Dissipation (Note 6)<br>~~ee~~|PD<br>~~ee~~|1.25<br>~~ee~~|W<br>~~ee~~| |Thermal Resistance, Junction to Ambient (Note 5)<br>~~ee~~|RθJA<br>~~ee~~|177<br>~~ee~~|°C/W<br>~~ee~~| |Thermal Resistance, Junction to Ambient (Note 6)<br>~~ee~~|RθJA<br>~~ee~~|100<br>~~ee~~|°C/W<br>~~ee~~| |Operatingand Storage Temperature Range<br>~~ee~~|TJ, TSTG<br>~~ee~~|-55 to +150<br>~~ee~~|°C<br>~~ee~~| **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~I~~|**Symbol**<br>~~I~~<br>~~ID~~|**Min**<br>~~I~~<br>~~I~~|**Typ**<br>~~I~~<br>~~(OOD~~|**Max**<br>~~I~~<br>~~ID~~|**Unit**<br>~~I~~<br>~~(OU~~|**Test Condition**<br>~~I~~| |**STATIC CHARACTERISTICS**<br>~~ID I (OOD~~<br>~~ID (OU~~<br>~~ee~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|12<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|ID= 250µA, VGS= 0V<br>~~ee~~| |Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|VDS= 12V, VGS= 0V<br>~~ee~~| |Gate-Body Leakage Current<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VDS= 0V, VGS= ±8V<br>~~ee~~| |Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|0.4<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~| |Static Drain-Source On-Resistance (Note 8)<br>~~SE~~|RDS(ON)<br>~~SE~~|—<br>~~SE~~|280<br>~~SE~~|450<br>~~SE~~|mΩ<br>~~SE~~|VGS= 4.5V, ID= 0.2A<br>~~SE~~| |||—<br>~~SE~~|360<br>~~SE~~|550<br>~~SE~~|mΩ<br>~~SE~~|VGS= 2.5V, ID= 0.1A<br>~~SE~~| |Forward Transfer Admittance<br>~~ee~~||YFS|<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|—<br>~~ee~~|s<br>~~ee~~|VDS= 6V, ID= 0.2A<br>~~ee~~| |Diode Forward Voltage (Note 8)<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.8<br>~~ee~~|1.0<br>~~ee~~|V<br>~~ee~~|IS= 0.2A, VGS= 0V<br>~~ee~~| |**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~|~~||||||| |Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|146<br>~~ee~~|190<br>~~ee~~|pF<br>~~ee~~|VDS= 6V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~<br>~~a~~| |Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|10<br>~~ee~~|15<br>~~ee~~|pF<br>~~ee~~|| |Reverse Transfer Capacitance<br>~~ee~~<br>~~a~~|Crss<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|8<br>~~ee~~<br>~~a~~|13<br>~~ee~~<br>~~a~~|pF<br>~~ee~~<br>~~a~~|| |Gate Resistance<br>~~a~~|Rg<br>~~a~~|—<br>~~a~~|2.4<br>~~a~~|—<br>~~a~~|Ω<br>~~a~~|VGS= 0V, VDS= 0V, f = 1MHz<br>~~a~~| |**SWITCHING CHARACTERISTICS** (Note 9)<br>~~I(OU~~<br>~~I~~||||||| |Total Gate Charge<br>~~I~~<br>~~rs~~|Qg<br>~~I~~<br>~~I~~<br>~~rs~~|—<br>~~I~~<br>~~(OU~~<br>~~rs~~|1.3<br>~~I~~<br>~~I~~<br>~~rs~~|1.9<br>~~I~~<br>~~rs~~|nC<br>~~I~~<br>~~rs~~|VGS= 4.5V, VDS= 6V, ID=0.2A<br>~~I~~<br>~~rs~~<br>~~ee~~| |Gate-Source Charge<br>~~rs~~|Qgs<br>~~I ~~<br>~~rs~~|—<br> ~~(OU~~<br>~~rs~~|0.3<br>~~I~~<br>~~rs~~|—<br>~~rs~~|nC<br>~~rs~~|| |Gate-Drain Charge<br>~~rs~~<br>~~—————~~|Qgd<br>~~rs~~|—<br>~~rs~~|0.1<br>~~rs~~|—<br>~~rs~~<br>~~ee~~|nC<br>~~rs~~<br>~~ee~~|| |Turn-On DelayTime<br>~~rs~~<br>~~—————~~|tD(ON) <br>~~rs~~|—<br>~~rs~~|1.9<br>~~rs~~|2.7<br>~~rs~~<br>~~ee~~|ns<br>~~rs~~<br>~~ee~~|VDD= 6V, VGS= 4.5V,<br>RL= 22Ω, Rg= 6Ω<br>~~rs~~<br>~~ee~~| |Turn-On Rise Time<br>~~—————~~|tR|—|1.3|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off DelayTime<br>~~—————~~|tD(OFF)|—|7.5|11<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~—————~~|tF|—|1.0|—<br>~~ee~~|ns<br>~~ee~~|| 7. Repetitive Rating, pulse width limited by junction temperature, and test with single MOSFET. 8. Test pulse width t = 300ms, test with single MOSFET. 9. Guaranteed by design with single MOSFET, not subject to production testing. 10. Based on characterization data only. Not subject to production testing. 3 of 8 **www.diodes.com** DMN1250UFEL Document number: DS37787 Rev. 7 - 2 September 2019 © Diodes Incorporated **DMN1250UFEL** **==> picture [488 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 1<br> VGS=4.0V VGS=3.0V 0.9 VDS= 5V<br>2.5 VGS=4.5V 0.8<br>2.0 TA VGS=2.5V 0.7 a<br>ian’ fae 0.6 e e<br>1.5 0.5<br> VGS=2.0V 0.4<br>1.0<br>0.3<br>125 ℃ 85 ℃<br>0.2<br>0.5 VGS=1.2V VGS=1.5V 0.1 150 ℃ 25 ℃<br>-55 ℃<br>- -——— — Je<br>0.0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.6 1.5<br>0.5 1.2 ALLEL ELE ELL<br> VGS=2.5V<br>0.4<br>0.9 EEE<br>0.3 ID=200mA<br> VGS=4.5V 0.6<br>0.2 AW LLL<br>0.3 OPNGHRRERLE<br>0.1 ID=100mA<br>LE ELA<br>0 0<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 12<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.6 1.6<br>VGS= 4.5V GS= 4.5V = 4.5V<br>0.5 1.4<br>125 ℃<br>150 ℃ VGS=4.5V, ID=200mA<br>THE COC C OE<br>0.4 1.2<br>ye SERSRED=<br>0.3 1<br>0.2 0.1 0 0 s SFEETFEET ordid) 85 S ℃ 25 ℃ = -55 ℃ 7 0.8 0.6 0.4 oT|Ecce CECEer _| VGS=2.5V, ID=100mA<br>0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) D, DRAIN CURRENT (A) , DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>(Ω) (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>(Ω)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [222 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6<br>VGS= 4.5V GS= 4.5V = 4.5V<br>0.5<br>125 ℃<br>150 ℃<br>THE<br>0.4<br>ye<br>0.3<br>s 85 S ℃ 25 ℃ = -55 ℃ 7<br>SFEETFEET ordid)<br>0.1 0 0.2 0.1 0 0<br>0 0.5 1 1.5 2 2.5 3<br>ID, DRAIN CURRENT (A) D, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Junction Temperature<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 4 of 8 **www.diodes.com** DMN1250UFEL Document number: DS37787 Rev. 7 - 2 September 2019 © Diodes Incorporated **DMN1250UFEL** **==> picture [478 x 671] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6 1.2<br> VGS=2.5V, ID=100mA GS=2.5V, ID=100mA =2.5V, ID=100mA D=100mA =100mA 1<br>0.4 ID=1mA<br>0.8 SS<br>ID=250μA<br> VGS=4.5V, ID=200mA GS=4.5V, ID=200mA =4.5V, ID=200mA D=200mA =200mA BacS< See<br>0.2<br>0.6<br>cu e<br>0 0.4<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>3 1000<br>f=1MHz<br>2.5 ee a P E<br>Ciss<br>2 100<br>ff =<br>1.5<br> VGS=0V, TJ=85 ℃ f/f ———<br>/ ee<br>1 VGS=0V, TJ=125 ℃ 10 Coss<br> VGS=0V,<br> VGS=0V, TJ=150 ℃ YH) TJ=25 ℃ e e Crss<br>0.5 VGS=0V,<br>0 WZZA TJ=-55 ℃ 1 eeee ee<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>4.5 10<br>4 RDS(ON) Limited PW=100μs<br>3.5<br>PW=1ms<br>3 1<br>2.5<br> VDS=6V, ID=200mA PW=10ms<br>2<br>PW=100ms<br>1.5 0.1 PW=1s<br>1 TTJ(MAX)A=25 ℃ =150 ℃ PW=10s<br>Single Pulse DC<br>0.5 DUT on 1*MRP Board<br>0 Y}7|| || || || | 0.01 pa VGS=4.5V PN<br>0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 100<br>Figure 11. Gate Charge Qg (nC) Figure 12. SOA, Safe Operation Area VDS, DRAIN-SOURCE VOLTAGE (V)<br>(Ω)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [219 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6<br> VGS=2.5V, ID=100mA GS=2.5V, ID=100mA =2.5V, ID=100mA D=100mA =100mA<br>0.4<br> VGS=4.5V, ID=200mA GS=4.5V, ID=200mA =4.5V, ID=200mA D=200mA =200mA<br>0.2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 5 of 8 **www.diodes.com** DMN1250UFEL Document number: DS37787 Rev. 7 - 2 September 2019 © Diodes Incorporated **DMN1250UFEL** | **==> picture [361 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 1 S e ESS—————E—E—EESSSgeant<br>l|t| IN mmr tT TT<br>D=0.5<br>F ITTS<br>D=0.3 INEE UINE | A enA...| | D=0.9 thaCTL EE EE<br>D=0.7<br>0.1 aeE LT TN aE ELIMIAELL UI<br>P D=0.1 1oe P<br>lllMar Tit TTT PT eo<br>VO Ph<br>D=0.05<br>TL P e<br>ST Ee<br>GF D=0.02 i a oe<br>0.01 ulmE IAY LUI LITTLLLotUT Tl<br>D=0.01<br>eet ZAC eer ee<br>A |<br>D=0.005 RθJA(t)=r(t) * RθJA<br>SER nim CHEECH HLT RθJA=177 ℃ /W |<br>D=Single Pulse Duty Cycle, D=t1 / t2<br>ru<br>0.001<br>cullCCIE |<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 6 of 8 **www.diodes.com** DMN1250UFEL Document number: DS37787 Rev. 7 - 2 September 2019 © Diodes Incorporated **DMN1250UFEL** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **U-QFN1515-12** **==> picture [418 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> A1 A3<br>A<br>Seating Plane U-QFN1515-12<br>ee Dim Min Max Typ<br>D A 0.57 0.63 0.60<br>A1 0.00 0.05 0.02<br>D2<br>A3 0.152 BSC<br>b 0.15 0.25 0.20<br>D 1.45 1.55 1.50<br>e D2 0.60 0.80 0.70<br>E 1.45 1.55 1.50<br>E2 0.60 0.80 0.70<br>el<br>E E2 e 0.40 BSC<br>L 0.15 0.25 0.20<br>k — — 0.25<br>z — — 0.050<br>z All Dimensions in mm<br>L<br>fle k b faa<br>Pin1 ID<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** **==> picture [426 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> Please see http://www.diodes.com/package-outlines.html for the latest version.<br>U-QFN1515-12<br>X2<br>C<br>X<br>Value<br>Dimensions<br>Y (in mm)<br>C 0.400<br>G 0.175<br>X 0.400<br>X1 0.700<br>Y3 Y1 Y2<br>X2 1.800<br>Y 0.250<br>Y1 0.700<br>Y2 1.450<br>ar Y3 1.800<br>G<br>sje X1 ==<br>**----- End of picture text -----**<br> 7 of 8 **www.diodes.com** DMN1250UFEL Document number: DS37787 Rev. 7 - 2 September 2019 © Diodes Incorporated **DMN1250UFEL** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated **www.diodes.com** 8 of 8 **www.diodes.com** DMN1250UFEL Document number: DS37787 Rev. 7 - 2 September 2019 © Diodes Incorporated
Updated at June 9, 2026
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