DMN10H6D2LFDB-7

**DMN10H6D2LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|---|---|---|
|100V|6Ω @ VGS= 10V|0.27A|
||10Ω @ VGS= 4.5V|0.21A|



## **Features and Benefits** 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- High Drain-Source Voltage Rating 

- **ESD Protected Up to 1kV** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. "Green" Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- Small Servo Motor Control 

- Power MOSFET Gate Drivers 

- Switching Applications 

**==> picture [211 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
U-DFN2020-6 (Type B)<br>S2<br>G2<br>D2<br>D1<br>D1<br>D2<br>ESD Protected<br>G1<br>yy S1<br>Pin1<br>Bottom View<br>**----- End of picture text -----**<br>


- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 © **e4** 

- Terminals Connections: See Diagram Below 

- Weight: 0.0065 grams (Approximate) 

**==> picture [70 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN10H6D2LFDB-7|U-DFN2020-6 (TypeB)|3,000/Tape &Reel|
|DMN10H6D2LFDB-13|U-DFN2020-6 (TypeB)|10,000/Tape &Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds . 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMN10H6D2LFDB Document number: DS43009 Rev. 2 - 2 

June 2021 © Diodes Incorporated 

**DMN10H6D2LFDB** 

## **Marking Information** 

## U-DFN2020-6 (Type B) 

62 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 1 = 2021) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) 

Date Code Key **Year 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031** ~~ee~~ **Code** 0 1 2 3 4 5 6 7 8 ~~ee~~ 9 ~~ee~~ 0 1 **Week 1-26 27-52 53 Code** A-Z a-z z ~~ee~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~—ee~~ **Code** T ~~ee~~ U V W X Y Z 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|100|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25C<br>TA= +70C|ID|0.27<br>0.22|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|0.27|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|0.6|A|
|Pulsed BodyDiode Forward Current (10μs Pulse,DutyCycle = 1%)|||ISM|0.6|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.7|W|
|Thermal Resistance,Junction to Ambient(Note 5)|Steady state|RJA|178|°C/W|
|Total Power Dissipation(Note 6)||PD|1.0|W|
|Thermal Resistance,Junction to Ambient(Note 6)|Steady state|RJA|125|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RJC|120||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

2 of 8 **www.diodes.com** 

DMN10H6D2LFDB Document number: DS43009 Rev. 2 - 2 

June 2021 © Diodes Incorporated 

**DMN10H6D2LFDB** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~————~~|**Symbol**<br>~~————~~|**Min**<br>~~————~~|**Typ **<br>~~————~~|**Max**<br>~~————~~|**Unit**<br>~~————~~|**Test Condition**<br>~~————~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~————~~|||||||
|Drain-Source Breakdown Voltage<br>~~————~~|BVDSS<br>~~————~~|100<br>~~————~~|—<br>~~————~~|—<br>~~————~~|V<br>~~————~~|VGS= 0V,ID= 250μA<br>~~————~~|
|Zero Gate Voltage Drain Current<br>~~————~~|IDSS<br>~~————~~|—<br>~~————~~<br>~~I~~|—<br>~~————~~<br>~~IN OS~~|1.0<br>~~————~~<br>~~OS~~|μA<br>~~————~~<br>~~(OR~~|VDS= 100V,VGS= 0V<br>~~————~~|
|Gate-Source Leakage<br>~~I~~|IGSS<br>~~I~~|—<br>~~I~~<br>~~I~~|—<br>~~I~~<br>~~IN OS~~|±10<br>~~I~~<br>~~OS~~|μA<br>~~I~~<br>~~(OR~~|VGS= ±20V,VDS= 0V<br>~~I~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~I~~<br>~~IN OS(OR~~<br>~~ff~~|||||||
|Gate Threshold Voltage<br>~~Ce~~|VGS(TH)<br>~~Ce~~<br>~~ff~~|0.8<br>~~Ce~~<br>~~ff~~|—<br>~~Ce~~<br>~~ff~~|2.0<br>~~Ce~~<br>~~ff~~|V<br>~~Ce~~<br>~~ff~~|VDS= VGS,ID= 1mA<br>~~Ce~~|
|Static Drain-Source On-Resistance|RDS(ON)<br>~~ff~~<br>~~ff~~|—<br>~~ff~~<br>~~ff~~|3.4<br>3.6<br>~~ff~~<br>~~ff~~|6<br>10<br>~~ff~~<br>~~ff~~|Ω<br>~~ff~~|VGS= 10V,ID= 0.19A|
|||||||VGS= 4.5V,ID= 0.15A|
|Diode Forward Voltage<br>~~Cf~~|VSD<br>~~Cf~~<br>~~ff~~|—<br>~~Cf~~<br>~~ff~~|0.9<br>~~Cf~~<br>~~ff~~|1.3<br>~~Cf~~<br>~~ff~~|V<br>~~Cf~~|VGS= 0V,IS= 0.34A<br>~~Cf~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ff~~<br>~~PC~~|||||||
|Input Capacitance<br>~~PC———~~|Ciss<br>~~———~~|—<br>~~———~~|41<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 50V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~PC———~~|Coss<br>~~———~~|—<br>~~———~~|4.2<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|3.1<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~<br>~~——_—~~|Rg<br>~~———~~|—<br>~~———~~|35<br>~~———~~|—<br>~~———~~<br>~~e~~|Ω<br>~~———~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~|~~<br>~~——_—~~|Qg|—|0.6|—<br>~~e~~|nC<br>~~e~~|VDS= 30V, ID= 1A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~——_—~~|Qg|—|1.2|—<br>~~e~~|nC<br>~~e~~||
|Gate-Source Charge<br>~~——_—~~|Qgs|—|0.2|—<br>~~e~~|nC<br>~~e~~||
|Gate-Drain Charge<br>~~——_—~~<br>~~——~~|Qgd|—|0.3|—<br>~~e~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~||
|Turn-On DelayTime<br>~~——_—~~<br>~~I~~<br>~~——~~|tD(ON)<br>~~I~~|—<br>~~I~~|4.0<br>~~I~~|—<br>~~e~~<br>~~I~~<br>~~ee~~|ns<br>~~e~~<br>~~I~~<br>~~ee~~|VDD= 50V, VGS= 10V,<br>Rg= 6Ω, ID= 0.19A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~|tR|—|2.3|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——~~|tD(OFF)|—|9.7|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——~~|tF|—|9.2|—<br>~~ee~~|ns<br>~~ee~~||
|BodyDiode Reverse RecoveryTime<br>~~——~~<br>~~ee~~|tRR<br>~~ee~~|<br>~~ee~~|31<br>~~ee~~|<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IF= 1A, di/dt = 100A/μs<br>~~ee~~<br>~~ee~~|
|BodyDiode Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|<br>~~ee~~|19<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~||



3 of 8 **www.diodes.com** 

DMN10H6D2LFDB Document number: DS43009 Rev. 2 - 2 

June 2021 © Diodes Incorporated 

**DMN10H6D2LFDB** 

**==> picture [498 x 673] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.6 0.4<br>VVGS GS = 5.0V= 10.0V —f-" VGS = 3.5V 0.35 VDS = 5V oo<br>0.5<br>VGS = 3.0V 0.3<br>0.4 VGS = 4.0V<br>0.25<br>VGS = 4.5V<br>0.3 az 0.2 ren<br>$f _ - ee<br>0.15<br>0.2 Sf ee) so<br>VGS = 2.5V<br>0.1 TJ = 150℃ TJ = 85℃<br>0.1<br>0.05 TJ = 125℃ TJ = 25℃<br>0.0 y/annnneee 0 fF TJ = -55℃<br>ALTE T TEE D _<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>Figure 1. Typical Output Characteristic<br>9 30<br>8 ee ee<br>26<br>7<br>22<br>6 ee<br>5 VGS = 4.5V 18<br>4 pt tTee  e e {| | | |<br>14<br>3 e VGS = 10V ee<br>10<br>2 SS A<br>6 ID = 0.15A<br>1 ID = 0.19A<br>a tk e<br>0 i 2 _ [—_____]<br>0 0.1 0.2 0.3 0.4 0.5 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>20 2.2<br>18 VGS = 10V<br>2<br>VGS =4.5V, ID = 0.15A<br>16<br>T se 1.8 Fy<br>14 VGS = 10V, ID = 0.19A<br>es a a, 1.6 — pf<br>12<br>TJ = 150℃<br>10 1.4<br>nee TJ = 125℃ 74 ee 4a<br>8<br>1.2<br>ee PP TT AL<br>6<br>n e 1 TA<br>4 TJ = 85℃<br>2 re TJ = 25 e ℃ e 0.8 TAL<br>0 — TJ = -55℃ 0.6 P44<br>0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature 

4 of 8 **www.diodes.com** 

DMN10H6D2LFDB Document number: DS43009 Rev. 2 - 2 

June 2021 © Diodes Incorporated 

**DMN10H6D2LFDB** 

**==> picture [492 x 672] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 4<br>9<br>P| | | |tt 3.5<br>8<br>ee 3 ee<br>7<br>oo 2.5 SEPP<br>6 Gf<br>5 VGS = 4.5V, ID = 0.15A 2<br>4 Pa t 1.5 E E ID = 1mA<br>3 VGS = 10V, ID = 0.19A<br>1 ID = 250μA<br>2 oe<br>0.5<br>1 —Pot | | | co l ee<br>0 0<br>PT Pp} et} et |<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Figure 8. Gate Threshold Variation vs. Junction<br>Junction Temperature Temperature<br>1 100<br>f = 1MHz<br>0.9 VGS = 0V | oo ==—=—=-=<br>Cississ<br>0.8<br>0.70.6 i OPp<br>0.5 10<br>I Mi} | | | | | | |<br>0.4 oo A \<br>Cossoss<br>0.3<br>TJ = 150 [o] C TJ = 85 [o] C<br>0.2 fy S S<br>TJ = 125 [o] C TJ = 25 [o] C Crssrss<br>0.1 po A<br>TJ = -55 [o] C<br>0 1<br>ee ZZ, BEREREREE<br>0 0.3 0.6 0.9 1.2 1.5 0 20 40 60 80 100<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1<br>R<br>DS(ON)<br>Limited<br>8<br>HANS XN XN i<br>0.1 PW = 10µsW = 10µs = 10µs<br>6 PW = 100µsW = 100µs = 100µs<br>PW = 1msW = 1ms = 1ms<br>PW = 10msW = 10msPW = 100ms = 10msW = 100ms = 100ms<br>4 VDS = 30V, ID = 1A | PW = 100ms = 10msW = 100ms = 100ms NYllllll<br>0.01 TJ(Max) = 150J(Max) = 150= 150 ℃ PW = 1sW = 1s = 1s<br>TA = 25A = 25 = 25 ℃<br>2 Single Pulse<br>DUT on Infinite<br>Heatsink |llll<br>VGS = 10VGS = 10V = 10V<br>0 0.001 EN<br>0 0.3 0.6 0.9 1.2 1.5 1 10 100 1000<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


**==> picture [233 x 443] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>f = 1MHz<br>==—=—=-=<br>Cississ<br>10<br>Mi} | | | | | | |<br>A \<br>Cossoss<br>S S<br>Crssrss<br>A<br>1<br>BEREREREE<br>0 20 40 60 80 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>1<br>R<br>DS(ON)<br>HANS XN XN Limited i<br>0.1 PW = 10µsW = 10µs = 10µs<br>PW = 100µsW = 100µs = 100µs<br>PW = 1msW = 1ms = 1ms<br>| PW = 10msW = 10msPW = 100ms = 10msW = 100ms = 100ms NYllllll<br>0.01 TJ(Max) = 150J(Max) = 150= 150 ℃ PW = 1sW = 1s = 1s<br>TA = 25A = 25 = 25 ℃<br>Single Pulse<br>DUT on Infinite<br>Heatsink |llll<br>VGS = 10VGS = 10V = 10V<br>EN<br>0.001<br>1 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


5 of 8 **www.diodes.com** 

DMN10H6D2LFDB Document number: DS43009 Rev. 2 - 2 

June 2021 

© Diodes Incorporated 

**DMN10H6D2LFDB** TT 

## DIODES, 

**==> picture [448 x 255] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>SS ee<br>D = 0.7<br>D = 0.5<br>C E Lr<br>D = 0.3 D = 0.9<br>|g alll ETNeUT ETATETTETT|<br>D = 0.1<br>0.1 es r<br>Ra D = 0.05 <a, Po LTTeeTMM LTTE TATA ETM TMT TUTTI<br>e e<br>a | |<br>D = 0.02<br>ef - CEP ETN INE ITI<br>D = 0.01<br>CY~ CPT<br>D = 0.005<br>0.01<br>e e<br>2/4) TIE TIT ETIETTITTT<br>Ca D = Single Pulse eeee<br>PT TE | TTTTT<br>0 RθJA (t) = r(t) * RθJA I<br>RθJA = 178℃/W<br>Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


6 of 8 **www.diodes.com** 

DMN10H6D2LFDB Document number: DS43009 Rev. 2 - 2 

June 2021 © Diodes Incorporated 

**DMN10H6D2LFDB** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [87 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
U-DFN2020-6 (Type B)<br>**----- End of picture text -----**<br>


**==> picture [500 x 627] intentionally omitted <==**

**----- Start of picture text -----**<br>
A3<br>A1<br>A<br>Seating Plane U-DFN2020-6<br>Type B<br>D Dim  Min  Max  Typ<br>A  0.545 0.605 0.575<br>D2 D2 A1  0.00 0.05 0.02<br>A3 -  -  0.13<br>b 0.20 0.30 0.25<br>D  1.95 2.075 2.00<br>D2  0.50 0.70 0.60<br>e -  -  0.65<br>z1 E  1.95 2.075 2.00<br>E2  0.90 1.10 1.00<br>E z1 E 2<br>k  -  -  0.45<br>k L  0.25 0.35 0.30<br>z  -  -  0.225<br>z1  -  -  0.175<br>L All Dimensions in mm<br>e<br>z<br>ie b<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>U-DFN2020-6 (Type B)<br>X2<br>C<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G  0.150<br>G1  0.450<br>X  0.350<br>X1( 2x) X1  0.600<br>X2  1.650<br>Y2 Y1( 2x) G Y  0.500<br>G1 Y1  1.000<br>Y2  2.300<br>-<br>Y<br>f Be,<br>X<br>HI o = _—o<br>DMN10H6D2LFDB 7 of 8<br>Document number: DS43009 Rev. 2 - 2 www.diodes.com<br>( Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br>


June 2021 © Diodes Incorporated 

**DMN10H6D2LFDB** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMN10H6D2LFDB Document number: DS43009 Rev. 2 - 2 

June 2021 © Diodes Incorporated