DMMT5551S

## OOS 

## **DMMT5551/DMMT5551S** & ~~UU~~ 

## **MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR** 

## **Features** 

• Epitaxial Planar Die Construction A **SOT-26** • Complementary PNP Type Available (DMMT5401) **Dim Min Max Typ** • Ideal for Low Power Amplification and Switching **A** 0.35 0.50 0.38 • Intrinsically Matched NPN Pair (Note 1) B C • 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) **B** 1.50 1.70 1.60 • **Lead Free/RoHS Compliant (Note 4) C** 2.70 3.00 2.80 [ ~~i I~~ • **"Green" Device (Note 5 and 6) D** ⎯ ⎯ 0.95 ~~——_—_—~~ **Mechanical Data** ~~H ===~~ **F** ⎯ ⎯ 0.55 ~~__~— Ff~~ K **H** 2.90 3.10 3.00 • Case: SOT-26 M ~~TT~~ • Case Material:  Molded Plastic, "Green" Molding **J** 0.013 ~~[|~~ 0.10 ~~fT~~ 0.05 Compound, Note 7.  UL Flammability Classification ~~ATHY~~ J D F ~~fi.I~~ L ee ~~FARee~~ **K** 1.00 ~~ee~~ 1.30 ~~ee~~ 1.10 Rating 94V-0 **L** 0.35 0.55 0.40 • Moisture Sensitivity:  Level 1 per J-STD-020C E1 E2 C2 C1 E1 C2 **M** 0.10 0.20 0.15 • Terminal Connections: See Diagram α 0° 8° ⎯ • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over ~~_~~ **All Dimens ons in mm i** Copper leadframe). • Marking Information: K4R & K4T, See Page 3 C1 B1 B2 B1 E2 B2 ~~Se~~ • Ordering & Date Code Information: See Page 3 DMMT5551 DMMT5551S • Weight: 0.006 grams (approximate) (K4R Marking Code) (K4T Marking Code) 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|180|V|
|Collector-Emitter Voltage|VCEO|160|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current - Continuous(Note 2)|IC|200|mA|
|Power Dissipation(Note 2,3)|Pd|300|mW|
|Thermal Resistance,Junction to Ambient(Note 2)|RθJA|417|°C/W|
|Operating and Storage Temperature Range|Tj, TSTG|-55 to +150|°C|



- Notes: 1.      Built with adjacent die from a single wafer. 

   2.      Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

   3.      Maximum combined dissipation. 

   4.      No purposefully added lead. 

   5.      Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

   6.      Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 

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**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|~~TTT~~|~~TTT~~|~~TTT~~|~~TTT~~|~~TTT~~|~~TTT~~|
|---|---|---|---|---|---|
|**Characteristic**|**Symbol **|**Min**|**Max **|**Unit**|**Test Condition **|
|**OFFCHARACTERISTICS (Note 7)**<br>~~RDOO~~||||||
|Collector-Base Breakdown Voltage<br>~~DD~~|V(BR)CBO<br>~~DD~~|180<br>~~DD~~<br>~~RD~~<br>~~OD~~|⎯<br>~~DD~~<br>~~OO~~<br>~~QO~~|V<br>~~DD~~<br>~~OO~~<br>~~O(n~~|IC= 100μA,IE= 0<br>~~DD~~<br>~~OO~~<br>~~O(n~~|
|Collector-Emitter Breakdown Voltage<br>~~DD~~<br>~~DD~~<br>~~—~~|(BR)CBO<br>V(BR)CEO<br>~~DD~~<br>~~DD~~<br>|160<br>~~DD~~<br>~~RD ~~<br>~~DD~~<br>~~OD~~<br>~~I~~<br>|⎯<br>~~DD~~<br> ~~OO~~<br>~~DD~~<br>~~QO~~<br>~~QO OO~~<br>|V<br>~~DD~~<br>~~OO~~<br>~~DD~~<br>~~O(n~~<br>~~OO~~<br>|IC= 1.0mA,IB= 0<br>~~DD~~<br>~~OO~~<br>~~DD~~<br>~~O(n~~<br>~~OO~~<br>|
|Emitter-Base Breakdown Voltage<br>~~DD~~<br>~~DD~~<br>~~—~~|(BR)CEO<br>V(BR)EBO<br>~~DD~~<br>~~DD~~<br>|6.0<br>~~DD~~<br>~~OD~~<br>~~DD~~<br>~~I~~<br>|⎯<br>~~DD~~<br>~~QO ~~<br>~~DD~~<br>~~QO OO~~<br>|V<br>~~DD~~<br> ~~O(n~~<br>~~DD~~<br>~~OO~~<br>|IE= 10μA,IC= 0<br>~~DD~~<br>~~O(n~~<br>~~DD~~<br>~~OO~~<br>|
|Collector Cutoff Current<br>~~—r—SS~~<br>~~a~~|(BR)EBO<br>ICBO<br>~~r—SS~~<br>~~GD~~|⎯<br>~~I~~<br>~~r—SS~~<br>~~GD OS~~|50<br>~~QO OO~~<br>~~r—SS~~<br>~~OS~~|nA<br>μA<br>~~OO~~<br>~~r—SS~~<br>~~(OR~~|VCB= 120V, IE= 0<br>VCB= 120V,IE= 0,TA= 100°C<br>~~OO~~<br>~~r—SS~~|
|Emitter Cutoff Current<br>~~—~~<br>~~a~~|IEBO<br><br>~~GD~~|⎯<br>~~I ~~<br><br>~~GD OS~~|50<br> ~~QO OO~~<br><br>~~OS~~|nA<br>~~OO~~<br><br>~~(OR~~|VEB= 4.0V,IC= 0<br>~~OO~~<br>|
|**ON CHARACTERISTICS (Note 7)**<br>~~a~~<br>~~GD OS (OR~~||||||
|DC Current Gain (Note 8)<br>~~—~~|hFE<br>~~es~~<br>|80<br>80<br>30<br>~~ts~~<br>|⎯<br>250<br>⎯<br>~~es~~<br>|⎯<br>~~es~~<br>|IC= 1.0mA, VCE= 5.0V<br>IC=  10mA, VCE= 5.0V<br>IC=  50mA,VCE= 5.0V<br>|
|Collector-Emitter Saturation Voltage<br>~~rs~~<br>~~—~~|VCE(SAT)<br>~~rs~~<br>~~es~~<br>|⎯<br>~~rs~~<br>~~ts~~<br>|0.15<br>0.20<br>~~rs~~<br>~~es~~<br>|V<br>~~rs~~<br>~~es~~<br>|IC= 10mA, IB= 1.0mA<br>IC= 50mA,IB= 5.0mA<br>~~rs~~<br>|
|Base-Emitter Saturation Voltage<br>~~rs~~<br>~~—rrr—s—sSS~~|VBE(SAT)<br>~~rs~~<br>~~es~~<br>~~rrr—s—sSS~~|⎯<br>~~rs~~<br>~~ts~~<br>~~rrr—s—sSS~~|1.0<br>~~rs~~<br>~~es~~<br>~~rrr—s—sSS~~|V<br>~~rs~~<br>~~es~~<br>~~rrr—s—sSS~~|IC= 10mA, IB= 1.0mA<br>IC= 50mA,IB= 5.0mA<br>~~rs~~<br>~~rrr—s—sSS~~|
|**SMALLSIGNALCHARACTERISTICS**<br>~~es ts es es~~<br>~~—~~<br>~~RD OO~~<br>~~PO~~||||||
|Output Capacitance<br>~~DD~~<br>~~PO~~|Cobo<br>~~DD~~<br>|⎯<br>~~DD~~<br>~~RD OO~~<br>|6.0<br>~~DD~~<br>~~OO~~<br>|pF<br>~~DD~~<br>~~OO~~<br>|VCB= 10V,f = 1.0MHz,IE= 0<br>~~DD~~<br>~~OO~~<br>|
|Small Signal Current Gain<br>~~DD~~<br>~~POeeees—a(i‘i‘“ae~~<br>~~**—**~~|hFE<br>~~DD~~<br>~~eeees—a(i‘i‘“ae~~<br>~~ee~~|50<br>~~DD~~<br>~~RD OO~~<br>~~eeees—a(i‘i‘“ae~~<br>~~Ge~~|250<br>~~DD~~<br>~~OO~~<br>~~eeees—a(i‘i‘“ae~~<br>~~es~~|⎯<br>~~DD~~<br>~~OO~~<br>~~eeees—a(i‘i‘“ae~~|VCE= 10V, IC= 1.0mA,<br>f = 1.0kHz<br>~~DD~~<br>~~OO~~<br>~~eeees—a(i‘i‘“ae~~|
|Current Gain-Bandwidth Product<br>~~PO~~<br>~~ee~~<br>~~**—**~~|fT<br><br>~~ee~~<br>~~ee~~|100<br>~~RD OO~~<br><br>~~ee~~<br>~~Ge~~|300<br>~~OO~~<br><br>~~ee~~<br>~~es~~|MHz<br>~~OO~~<br><br>~~ee~~|VCE= 10V, IC= 10mA,<br>f = 100MHz<br>~~OO~~<br><br>~~ee~~|
|Noise Figure<br>~~ee~~<br>~~**—**~~<br>~~sSS~~|NF<br>~~ee~~<br>~~ee~~<br>~~sSS~~|⎯<br>~~ee~~<br>~~Ge~~<br>~~sSS~~|8.0<br>~~ee~~<br>~~es~~<br>~~sSS~~|dB<br>~~ee~~<br>~~sSS~~|VCE= 5.0V, IC= 200μA,<br>RS= 1.0kΩ, f = 1.0kHz<br>~~ee~~<br>~~sSS~~|



8.   The DC Current Gain, hFE, (matched at IC = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%. 

**==> picture [482 x 222] intentionally omitted <==**

**----- Start of picture text -----**<br>
400 0.15<br>350 0.14 IICB  = 10<br>300 Saeeeeae 0.13 = TIETEHeTH1 |<br>0.12 M c<br>250 ENE 0.11 TA = 150°C coh<br>0.10 COM ic Con<br>NT a a<br>200<br>J 0.09 CEC<br>150 ERNE 0.08 nAC h<br>100 TINT TT 0.07 SCI e / TA d  = 25°C<br>x 0.06 S SE<br>50<br>|] 0.05 AT TA = -50°C o l<br>0 LEEPINLIN| E. 0.04 SSeSHCYRez2rd alTHT<br>0 25 50 75 100 125 150 175 200 1 10 100 1,000<br>TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)<br>Fig. 1, Max Power Dissipation vs.  Fig. 2, Collector Emitter Saturation Voltage<br>Ambient Temperature vs. Collector Current<br>, POWER DISSIPATION (mW) , COLLECTOR TO EMITTER<br>D<br>P SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1,000 1.0<br>VCE = 5V a eee VCE = 5V<br>SeA | ||<br>a===ot TA = 150°C -att 0.90.8 i TA = -50°C ee amlpa<br>— ee ee _=. pb<br>100 0.7<br>SS <a tort<br>S rs TA = 25°C mealS TA = -50°C | | TEN 0.6 pee — || TA = 25°C ,;<br>ee ee ei Bs yy<br>ee ee | tT Ti 0.5 —T]| y||<br>10 ee eel ie<br>SafTa RD DAETOSG OOSCS CO CO OGG 0 0.4 a I=< TA = 150°C an<br>| 0.3 Lill<br>1 0.2<br>1 CCIE 10 Cal 100 0.1 a 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 3, DC Current Gain vs. Collector Current Fig. 4, Base Emitter Voltage vs. Collector Current<br>1,000<br>CE > a 0<br>es a 0<br>a a e e ee e e<br>PTE T<br>ee<br>100 e e<br>0ee<br>ee a OO Oe 0 sO<br>pT TT<br>a<br>10<br>Pope<br>po<br>PT TT<br>1<br>1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 5, Gain Bandwidth Product vs. Collector Current<br>, DC CURRENT GAIN<br>, BASE EMITTER VOLTAGE (V)<br>FE<br>h<br>BE(ON)<br>V<br>GAIN BANDWIDTH PRODUCT (MHz)<br>,<br>fT<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 6 & 9 ) 

|**Ordering Informationg Information Information**(Note 6 & 9 )|||
|---|---|---|
|**Device**|**Packaging**|**Shipping**|
|DMMT5551-7-F|SOT-26|3000/Tape &Reel|
|DMMT5551S-7-F|SOT-26|3000/Tape &Reel|



Notes: 9.   For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

|||E1|E2||C2||||||||||||C1|||E1|E1||C2||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||K4R<br>B1<br>C1|||YM<br>B2|||K4R = DMMT5551 Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year ex: T = 2006<br>M = Month ex: 9 = September|||||||||B1||K4T<br>E2||||YM<br>B2||K4T = DMMT5551S Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year ex: T = 2006<br>M = Month ex: 9 = September||||K4T = DMMT5551S Product Type Marking Code||
|Date CodeKey|||||||||||||||||||||||||||||||
|||**Year**||||||**2003**<br>**2004**<br>**2005**|||**2005**|||**2006**|||**2007**|||||**2008**|||**2009**<br>**2010**||**2011**|||**2012**|
|||**Code**||||||P|R<br>S||||||T||U||||||V|V|W<br>X|||Y||Z|
||||||||||||||||||||||||||||||||
|||**Month**||||||**Jan**<br>**Feb**|**Mar**||**Apr**||||**May**||**Jun**|||||**Jul**|||**Aug**<br>**Sep**|**Oct**||**Nov**||**Dec**|
|||**Code**||||||1<br>2|3||4||4||5||6||||||7||8<br>9|O|O|N||D|



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## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

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