Illustrative purposes only
DMMT5551-7-F
Bipolar Transistor Array, Dual NPN, 160 V, 200 mA, 300 mW, 80 hFE, SOT-26
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 80hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- DC Collector Current: 200mA
- Power Dissipation Pd: 300mW
- Power Dissipation NPN: 300mW
- Transistor Case Style: SOT-26
- Transition Frequency NPN: 300MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 80hFE
- Continuous Collector Current NPN: 200mA
- Collector Emitter Voltage Max NPN: 160V
- Collector Emitter Voltage V(br)ceo: 160V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.083 € |
| Current stock | 8190 |
| Lead time | 7 days |