DMMT3904WQ-7-F

**DMMT3904W** C~«d 

**DMMT3904W 40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363** 

## **Features** 

## **Mechanical Data** 

- BVceo > 40V 

- IC = 200mA High Collector Current 

- Pair of NPN Transistors that are Intrinsically Matched (Note 1) 

- 2% Matching on Current Gain (hFE) 

- 2mV Matching on Base-Emitter Voltage (VBE) 

- Fully Internally Isolated in a Small Surface Mount Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)** 

   - Case: SOT363 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-202, Method 208 O **e3** 

   - Weight: 0.006 grams (Approximate) 

- **Halogen and Antimony Free. "Green" Device (Note 4)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 5)** 

## **Applications** 

- Current Mirrors 

- Differential and Instrumentation Amplifiers 

- Comparators 

SOT363 

Top View 

Device Schematic and Pin-Out Top View 

## **Ordering Information** (Notes 5 & 6) 

|**Ordering Informationg Information Information** (Notes 5 & 6)|**Ordering Informationg Information Information** (Notes 5 & 6)|**Ordering Informationg Information Information** (Notes 5 & 6)|**Ordering Informationg Information Information** (Notes 5 & 6)|**Ordering Informationg Information Information** (Notes 5 & 6)|**Ordering Informationg Information Information** (Notes 5 & 6)|
|---|---|---|---|---|---|
|||||||
|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|DMMT3904W-7-F|AEC-Q101|K4A|7|8|3,000|
|DMMT3904WQ-7-F|Automotive|K4A|7|8|3,000|



Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer. 

2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

5. Automotive products are AEC-Q101 qualified and are PPAP capable.  Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 6. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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SOT363<br>**----- End of picture text -----**<br>


|||||[|||ft|I|I||||||K4A = Product Type Marking Code|K4A = Product Type Marking Code|K4A = Product Type Marking Code|K4A = Product Type Marking Code|K4A = Product Type Marking Code|K4A = Product Type Marking Code|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||YM = Date Code Marking||YM = Date Code Marking||||||||||
|||||e<br>IE||UU||||||Y = Year (ex: F = 2018)<br>M = Month (ex: 2 = February)|Y = Year (ex: F = 2018)<br>M = Month (ex: 2 = February)|Y = Year (ex: F = 2018)<br>M = Month (ex: 2 = February)||||||||||
|Date Code Key||||||||||||||||||||||||
|**Year**|**2017**|**2018**||**2019**||**2020**||**2021**|||**2022**|||**2023**<br>**2024**|||**2025**||**2026**||**2027**||**2028**|
|**Code**|E|F||G||H|||I|||J|J||K<br>L||M||N||O||P|
|||||||||||||||||||||||||
|**Month**|**Jan**|**Feb**||**Mar**||**Apr**|||**May**||||**Jun**||**Jul**<br>**Aug**||**Sep**||**Oct**||**Nov**||**Dec**|
|**Code**|1|2||3|||4||5|||||6|7<br>8||9||O||N||D|



1 of 6 **www.diodes.com** 

DMMT3904W Document number: DS30311 Rev. 13 - 2 

February 2018 © Diodes Incorporated 

**DMMT3904W** 

## **Absolute Maximum Ratings** (@TA = +25°C unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-BaseVoltage|VCBO|60|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-BaseVoltage|VEBO|6.0|V|
|Collector Current|IC|200|mA|



**Thermal Characteristics – Total Device** (@TA = +25°C unless otherwise specified.) 

|**Thermal Characteristics – Total Device – Total Device**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note7)Total Device|PD|200|mW|
|Thermal Resistance, JunctiontoAmbient (Note7)|RθJA|625|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-65 to +150|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|ElectrostaticDischarge- MachineModel|ESD MM|400|V|C|



Notes: 7. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state. 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

## **Thermal Characteristics – Total Device** 

2 of 6 **www.diodes.com** 

DMMT3904W Document number: DS30311 Rev. 13 - 2 

February 2018 © Diodes Incorporated 

**DMMT3904W** 

**Electrical Characteristics** (@TA = +25°C unless otherwise specified.) 

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|---|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|nn|A|OO|||
|OFF CHARACTERISTICS|
|So|Collector-Base Breakdown Voltage|BVCBO|60|o||r||Ss|V|3S|IC = 100µA, IE = 0|
|ee|Collector-Emitter Breakdown Voltage(Note 9)|BVCEO|40|||V|(|IC = 1.0mA, IB = 0|
|Emitter-Base Breakdown Voltage|BVEBO|6.0|||V|IE = 100µA, IC = 0|
|Collector Cutoff Current|ICEX|||50|nA|VCE = 30V, VEB(OFF) = 3.0V|
|—|Base Cutoff Current|IBL|||50|nA|VCE = 30V, VEB(OFF) = 3.0V|
|Ce|ON CHARACTERISTICS (Note 9)|
|40||IC =  100µA,  VCE =  1.0V|
|70||IC =  1.0mA,  VCE =  1.0V|
|DC Current Gain|hFE|100||300||IC =  10mA,   VCE =  1.0V|
|60||IC =   50mA,  VCE =  1.0V|
|30||IC = 100mA,  VCE =  1.0V|
|Collector-Emitter Saturation Voltage|VCE(SAT)|||200 300|mV|IIC C = 50mA, I= 10mA, IBB = 1.0mA  = 5.0mA|
|Se|Base-Emitter Saturation Voltage|VBE(SAT)|0.65 ||850 950|mV|IICC = 10mA, I = 50mA, IBB = 1.0mA  = 5.0mA|
|MATCHING CHARACTERISTICS|
|DC Current Gain Matching|(Note 10)|hFE1 / hFE2||1|2|%|IC = 2mA, VCE = 5V|
|tt|Base-Emitter Voltage Matching|(Note 11)|VBE1 -|VBE2||1|2|mV|IC = 2mA, VCE = 5V|
|Collector-Emitter Saturation Voltage (Note 10)|VCE(SAT)1 /||1|2|%|IC = 10mA, IB = 1.0mA|
|ee|Base-Emitter Saturation Voltage (Note 10)|VVBE(SAT)1 CE|es|(SAT)2/|es||es|1|2|%|IC = 10mA, IB = 1.0mA|
|ee|SMALL SIGNAL CHARACTERISTICS|VBE|es|(SAT)2|es|es|
|Output Capacitance|COBO|||4.0|pF|VCB = 5.0V, f = 1.0MHz, IE = 0|
|tt|Input Capacitance|CIBO|||8.0|pF|VEB = 0.5V, f = 1.0MHz, IC = 0|
|Input Impedance|hIE|1.0||10|kΩ|
|Voltage Feedback Ratio|hRE|0.5||8|x 10|[-4]|VCE = 10V, IC = 1.0mA,|
|Small Signal Current Gain|hFE|100||400||f = 1.0kHz|
|eeoo|Output Admittance|hOE|1.0||40|µS|
|OO|Current Gain-Bandwidth Product|fT|300|||MHz|Vf = 100MHz CE = 20V, IC = 10mA,|
|Noise Figure|NF|||5.0|dB|VCE = 5.0V, IC = 100µA,|
|RS = 1.0kΩ|f = 1.0kHz|
|SWITCHING CHARACTERISTICS|
|Delay Time|tD|||35|ns|VCC = 3.0V, IC = 10mA,|
|ee|Rise Time|tR|||35|ns|VBE(OFF) = -0.5V, IB1 = 1.0mA|
|Storage Time|tS|||200|ns|VCC = 3.0V, IC = 10mA,|
|ee|Fall Time|tF|||50|ns|IB1 = IB2 = 1.0mA|
|Notes:|9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.|

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10. Is the ratio of one transistor compared to the other transistor. 

11. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor. 

3 of 6 **www.diodes.com** 

DMMT3904W Document number: DS30311 Rev. 13 - 2 

February 2018 © Diodes Incorporated 

**DMMT3904W** 

## **Typical Electrical Characteristics** (@TA = +25°C unless otherwise specified.) 

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4 of 6 **www.diodes.com** 

DMMT3904W Document number: DS30311 Rev. 13 - 2 

February 2018 © Diodes Incorporated 

**DMMT3904W** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>**----- End of picture text -----**<br>


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E E1<br>F<br>Cd b<br>D<br>A2<br>c a<br>A1 e A. L<br>**----- End of picture text -----**<br>


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SOT363<br>Dim  Min  Max  Typ<br>A1  0.00 0.10 0.05<br>A2  0.90 1.00 1.00<br>b  0.10 0.30 0.25<br>c 0.10 0.22  0.11<br>— D  1.80 2.20 2.15<br>E  2.00 2.20 2.10<br>E1  1.15 1.35 1.30<br>e  0.650 BSC<br>F  0.40 0.45 0.425<br>L  0.25 0.40 0.30<br>a 0° 8° --<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>C<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>Y1 G G  1.300<br>X  0.420<br>Y  0.600<br>Y1  2.500<br>Y<br>Poa X<br>**----- End of picture text -----**<br>


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DMMT3904W Document number: DS30311 Rev. 13 - 2 

February 2018 © Diodes Incorporated 

**DMMT3904W** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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DMMT3904W Document number: DS30311 Rev. 13 - 2 

February 2018 © Diodes Incorporated