DMMT3904W-7-F

**DMMT3904W** eo. [ **40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363** 

## **Features** 

## **Mechanical Data** 

- BVCEO > 40V 

- IC = 200mA High Collector Current 

- Pair of NPN Transistors that are Intrinsically Matched (Note 1) 

- 2% Matching on Current Gain (hFE) 

- 2mV Matching on Base-Emitter Voltage (VBE) 

- Fully Internally Isolated in a Small Surface Mount Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)** 

   - Package: SOT363 

   - Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.006 grams (Approximate) 

- **Halogen and Antimony Free. "Green" Device (Note 4)** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet DIODES™ (DMMT3904WQ)** 

## **Applications** 

- Current mirrors 

- Differential and instrumentation amplifiers 

- Comparators 

**==> picture [33 x 8] intentionally omitted <==**

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SOT363<br>**----- End of picture text -----**<br>


Top View 

Device Schematic and Pin-Out Top View 

## **Ordering Information** (Note 5) 

|**Part Number**|**Package**|**Marking**|**Reel Size (inches)**|**Tape Width (mm)**|**Packing**|**Packing**|
|---|---|---|---|---|---|---|
||||||**Qty. **|**Carrier **|
|DMMT3904W-7-F|SOT363|K4A|7|8|3,000|Reel|



- Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer. 

   2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

3. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
SOT363<br>[| Tt fl<br>K4A = Product Type Marking Code<br>YM = Date Code Marking Y or Y = Year (ex: J = 2022)  |<br>M = Month (ex: 6 = June)<br>Date Code Key<br>Year 2002  …  2022  2023 2024  2025 2026 2027  2028 2029 2030 2031<br>Code O  …  J  K  L  M  N  O  P  R  S  T<br>——— oe ee<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>eee Code 1  2  3  4  5  6  7  8  9  O  N  D<br>**----- End of picture text -----**<br>


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DMMT3904W Document number: DS30311 Rev. 15 - 2 

June 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. 

**DMMT3904W** [ts~«<sS 

## LrODES. 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|60|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current|IC|200|mA|



**Thermal Characteristics – Total Device** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics – Total Device – Total Device**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 6)Total Device|PD|200|mW|
|Thermal Resistance, Junction to Ambient(Note 6)|RθJA|625|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-65 to +150|°C|



## **ESD Ratings** (Note 7) 

|**ESD Ratingsgss **(Note 7)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; the device is measured under still air conditions whilst operating in a steady-state. 

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

## **Thermal Characteristics – Total Device** 

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See Note 6<br>TIN E T<br>SLANE EEE<br>100 PT EEK ELE<br>PTE LINaNEEL<br>“PARE<br>ittLE EERE7<br>0 AOD 80 120 160<br>T,, AMBIENT TEMPERATURE (°C)<br>Figure 1.  Power Derating Curve (Total Device)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


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DMMT3904W Document number: DS30311 Rev. 15 - 2 

June 2022 

© 2022 Copyright Diodes Incorporated. All Rights Reserved. 

**DMMT3904W** 

|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)<br>~~ee~~|= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~es~~<br>~~a~~|**Symbol**<br>~~es~~<br>~~ee~~<br>~~ee~~|**Min**<br>~~es~~<br>~~ee~~|**Typ**<br>~~es~~<br>~~ee~~|**Max**<br>~~es~~|**Unit**<br>~~es~~|**Test Condition**<br>~~es~~|
|**OFF CHARACTERISTICS**<br>~~ee~~<br>~~ee~~<br>~~eeeeee~~<br>~~a~~|||||||
|Collector-Base Breakdown Voltage<br>~~ee~~<br>~~a~~|BVCBO<br>~~ee~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|IC= 100µA, IE= 0<br>~~ee~~|
|Collector-Emitter Breakdown Voltage(Note 8)<br>~~a~~|BVCEO<br>~~ee ~~|40<br> ~~ee ~~|<br> ~~ee~~||V|IC= 1.0mA, IB= 0|
|Emitter-Base Breakdown Voltage<br>~~a~~|BVEBO<br>~~a~~|6.0<br>~~a~~|<br>~~a~~|<br>~~a~~|V<br>~~a~~|IE= 100µA, IC= 0<br>~~a~~|
|Collector Cutoff Current<br>~~a~~|ICEX<br>~~a~~|<br>~~a~~|<br>~~a~~|50<br>~~a~~|nA<br>~~a~~|VCE= 30V, VEB(OFF)= 3.0V<br>~~a~~|
|Base Cutoff Current<br>~~a~~|IBL<br>~~a~~|<br>~~a~~|<br>~~a~~|50<br>~~a~~|nA<br>~~a~~|VCE= 30V, VEB(OFF)= 3.0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 8)**|||||||
|DC Current Gain|hFE<br>~~ee~~|40<br>70<br>100<br>60<br>30<br>~~ee~~|<br>~~ee~~|<br><br>300<br><br>||IC= 100µA, VCE= 1.0V<br>IC= 1.0mA, VCE= 1.0V<br>IC= 10mA, VCE= 1.0V<br>IC= 50mA, VCE= 1.0V<br>IC= 100mA, VCE= 1.0V|
|Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(sat)<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~<br>~~ee~~|200<br>300<br>~~ee~~<br>~~ee~~|mV<br>~~ee~~<br>~~ee~~|IC= 10mA, IB= 1.0mA<br>IC= 50mA, IB= 5.0mA<br>~~ee~~|
|Base-Emitter Saturation Voltage<br>~~ee~~<br>~~rv~~|VBE(sat)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~rv~~|650<br><br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~rv~~|<br> ~~ee~~<br>~~ee~~<br>~~ee~~|850<br>950<br>~~ee~~<br>~~ee~~<br>~~———s~~|mV<br>~~ee~~<br>~~ee~~<br>~~———s~~|IC= 10mA, IB= 1.0mA<br>IC= 50mA, IB= 5.0mA<br>~~ee~~<br>~~———s~~|
|**MATCHING CHARACTERISTICS**<br>~~ee ee ee ee~~<br>~~rv~~<br>~~———s~~|||||||
|DC Current Gain Matching (Note 9)<br>~~rv~~|hFE1 / hFE2<br>~~rv~~|<br>~~rv~~|1|2<br>~~———s~~|%<br>~~———s~~|IC= 2mA, VCE= 5V<br>~~———s~~|
|Base-Emitter Voltage Matching (Note 10)<br>~~rv~~<br>~~a~~|VBE1 - VBE2<br>~~rv~~<br>~~ee~~|<br>~~rv~~<br>~~ee~~|1<br>~~ee~~|2<br>~~———s~~|mV<br>~~———s~~|IC= 2mA, VCE= 5V<br>~~———s~~|
|Collector-Emitter Saturation Voltage (Note 9)<br>~~a~~|VCE(sat)1/<br>VCE(sat)2<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|1<br>~~ee~~|2|%|IC= 10mA, IB= 1.0mA|
|Base-Emitter Saturation Voltage (Note 9)<br>~~ee~~|VBE(sat)1/<br>VBE(sat)2<br>~~ee ~~<br>~~ee~~<br>~~ee~~|<br> ~~ee~~<br>~~ee~~<br>~~ee~~|1<br>~~ee~~<br>~~ee~~|2<br>~~ee~~|%<br>~~ee~~|IC= 10mA, IB= 1.0mA<br>~~ee~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~ee ee~~<br>~~ee~~|||||||
|Output Capacitance<br>~~ee~~|Cobo<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|4.0<br>~~ee~~|pF<br>~~ee~~|VCB= 5.0V, f = 1.0MHz, IE= 0<br>~~ee~~|
|Input Capacitance<br>~~**a**~~<br>~~———_——~~|Cibo<br>~~**a**~~<br>~~———_——~~|<br>~~**a**~~|<br>~~**a**~~|8.0<br>~~**a**~~|pF<br>~~**a**~~<br>~~ee~~|VEB= 0.5V, f = 1.0MHz, IC= 0<br>~~**a**~~<br>~~ee~~|
|Input Impedance<br>~~**a**~~<br>~~———_——~~|hie<br>~~**a**~~<br>~~———_——~~|1.0<br>~~**a**~~|<br>~~**a**~~|10<br>~~**a**~~|kΩ<br>~~**a**~~<br>~~ee~~|VCE= 10V, IC= 1.0mA,<br>f = 1.0kHz<br>~~**a**~~<br>~~ee~~<br>~~ee~~|
|Voltage Feedback Ratio<br>~~———_——~~|hre<br>~~———_——~~|0.5||8|x 10-4<br>~~ee~~||
|Small Signal Current Gain<br>~~———_——~~|hfe<br>~~———_——~~|100||400|<br>~~ee~~||
|Output Admittance<br>~~———_——~~|hoe<br>~~———_——~~<br>~~ee~~|1.0<br>~~ee~~|<br>~~ee ee~~|40<br>~~ee~~|µS<br>~~ee~~<br>~~ee~~||
|Current Gain-Bandwidth Product<br>~~———_——~~<br>~~es~~|fT<br>~~———_——~~<br>~~es~~<br>~~ee~~<br>~~ee~~|300<br>~~es~~<br>~~ee~~<br>~~ee~~|<br>~~es~~<br>~~ee ee~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|MHz<br>~~ee~~<br>~~es~~<br>~~ee~~|VCE= 20V, IC= 10mA,<br>f = 100MHz<br>~~ee~~<br>~~es~~<br>~~ee~~|
|Noise Figure<br>~~es~~|NF<br>~~ee ~~<br>~~es~~<br>~~ee~~|<br> ~~ee ~~<br>~~es~~<br>~~ee~~|<br> ~~ee ee~~<br>~~es~~<br>~~ee~~|5.0<br>~~ee~~<br>~~es~~|dB<br>~~ee~~<br>~~es~~|VCE= 5.0V, IC= 100µA,<br>RS= 1.0kΩ, f = 1.0kHz<br>~~ee~~<br>~~es~~|
|**SWITCHING CHARACTERISTICS**<br>~~ee ee ee~~<br>~~eeeeaoe a~~|||||||
|DelayTime<br>~~es~~|td<br>~~es~~|<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|35<br>~~es~~<br>~~ee~~|ns<br>~~es~~<br>~~aoe a~~|VCC= 3.0V, IC= 10mA,<br>VBE(on)= -0.5V, IB1= 1.0mA<br>~~es~~<br>~~a~~<br>~~ae~~|
|Rise Time<br>~~es~~|tr<br>~~es~~|<br>~~es~~<br>~~ee~~<br>~~ea~~|<br>~~es~~<br>~~ee~~<br>~~ea~~|35<br>~~es~~<br>~~ee~~<br>~~i~~|ns<br>~~es~~<br>~~aoe a~~<br>~~aos~~||
|Storage Time<br>~~es~~|ts<br>~~es~~|<br>~~ee~~<br>~~es~~<br>~~ea~~|<br>~~ee ~~<br>~~es~~<br>~~ea~~|200<br> ~~ee ~~<br>~~es~~<br>~~i~~|ns<br> ~~aoe a~~<br>~~es~~<br>~~aos~~|VCC= 3.0V, IC= 10mA,<br>IB1= -IB2= 1.0mA<br>~~a~~<br>~~es~~<br>~~ae~~|
|Fall Time<br>~~es~~|tf<br>~~es~~|<br>~~es~~<br>~~ea~~|<br>~~es~~<br>~~ea~~|50<br>~~es~~<br>~~i~~|ns<br>~~es~~<br>~~aos~~||



10. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor. 

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DMMT3904W Document number: DS30311 Rev. 15 - 2 

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**DMMT3904W** CT 

## DIODES, 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
1,000 1<br>B<br>a ee<br>A eset th o T a |<br>eee  eee Cee Se S E<br>100<br>Sa c h 0.1 7a m<br>See eeAN S ES SSS Seervi<br>10<br>Sa | H |C)GO| GO «= ES S<br>Po<br>eee a a<br>1 0.01<br>0.1 aii 1 10 Ra 100 1,000 0.1 LTT 1 TAE 10 TI 100 Uh 1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. Fig. 3, Typical DC Current Gain vs. Figure 3. Fig. 4, Typical Collector-Emitter<br>Collector Current Saturation Voltage vs. Collector Current<br>10 S i i OS|S|| ESS 15 t| e | Ui<br>a HT T TE TTT | | |<br>a a || 10 mw) R E<br>| | | a | |<br>1 CN UN EU eneh a |<br>a a<br>a | | oS \<br>SEE 5 TQ ee e y<br>CIBO<br>a a en || SS e l<br>a a a || POI ONG TT<br>a a | gr lille C naa OBO<br>0.1 TITHE UI LI 0 Eel<br>0.1 1 10 100 1,000 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA) Figure 5. Fig. 2, Input and Output Capacitance vs.VCB, COLLECTOR-BASE VOLTAGE (V)<br>Figure 4. Fig. 5, Typical Base-EmitterFig. 5, Typical Base-Emitter<br>Collector-Base Voltage<br>, DC CURRENT GAIN<br>FE<br>h<br>, INPUT CAPACITANCE (pF) , OUTPUT CAPACITANCE (pF)<br>C<br>C<br>IBO OBO<br>SAT) (<br>BE SATURATION VOLTAGE<br>SAT)CE (<br>, COLLECTOR-EMITTER (V)<br>SATURATION VOLTAGE<br>V<br>sat),<br>**----- End of picture text -----**<br>


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10 S i i OS|S|| ESS<br>a HT T TE TTT<br>a a ||<br>| |<br>1 CN UN EU<br>a<br>a | |<br>SEE<br>a a en ||<br>a a a ||<br>a a |<br>0.1 TITHE UI LI<br>0.1 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 4. Fig. 5, Typical Base-EmitterFig. 5, Typical Base-Emitter<br>Saturation Voltage vs. Collector Current<br>, BASE-EMITTER (V)<br>SAT) (<br>BE SATURATION VOLTAGE<br>V<br>sat),<br>**----- End of picture text -----**<br>


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DMMT3904W Document number: DS30311 Rev. 15 - 2 

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© 2022 Copyright Diodes Incorporated. All Rights Reserved. 

**DMMT3904W** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
SOT363<br>Dim  Min  Max  Typ<br>E E1 A1  0.00 0.10 0.05<br>A2  0.90  1.00  0.95<br>b  0.10  0.30  0.25<br>c 0.10 0.22  0.11<br>D  1.80 2.20  2.15<br>E  2.00  2.20  2.10<br>Erol F b E1  1.15  1.35  1.30<br>e  0.650 BSC<br>F  0.40  0.45  0.425<br>D L  0.25  0.40  0.30<br>a  0° 8° --<br>All Dimensions in mm<br>A2<br>c a<br>A1 e |lan L Tr<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT363<br>C<br>Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G  1.300<br>Y1 b a. G X  0.420<br>Y  0.600<br>Y1  2.500<br>Y<br>n= X<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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DMMT3904W Document number: DS30311 Rev. 15 - 2 

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**DMMT3904W** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes’        products        are        provided        subject        to        Diodes’        Standard        Terms       and       Conditions       of       Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-andconditions/important-notice 

DIODES is a trademark of Diodes Incorporated in the United States and other countries. 

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. © 2022 Diodes Incorporated. All Rights Reserved. 

## **www.diodes.com** 

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DMMT3904W Document number: DS30311 Rev. 15 - 2 

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© 2022 Copyright Diodes Incorporated. All Rights Reserved.