DMHT6016LFJ-13

**DMHT6016LFJ** ®. ~~—~~ **60V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE** 

## DIODES. 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|60V|22mΩ@VGS= 10V|10.6A|
||30mΩ@VGS= 4.5V|8.7A|



## **Features** 

- Thermally Efficient Package – Cooler Running Applications 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On-State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

## **Mechanical Data** 

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. 

- Case: V-DFN5045-12 (Type B) 

- Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

   - Terminal Connections: See Diagram 

   - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.097 grams (Approximate) 

- Motor Control 

- DC-DC Converters 

- Power Management  

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V-DFN5045-12 (Type B)  S3  G1 1 12 G4<br>S3<br>G3  D1/D4 2 11 D1/D4<br>D3/S4<br>S4/D3  D1/D4<br>S1/D2  G4  S1/D2 3 Q1 Q4 10 S4/D3<br>D1/D4<br>S2 S2  G2 4 9 G3<br>G2<br>S1/D2<br>D1/D4  S2 5 8 S3<br>G1<br>Q2 Q3<br>Pin 1  S2 6 7 S3<br>Top View  Bottom View<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMHT6016LFJ-13|V-DFN5045-12(Type B)|3,000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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T616LJ<br>YY WW<br>**----- End of picture text -----**<br>


=Manufacturer’s Marking T616LJ = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) 

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DMHT6016LFJ Document number: DS37895 Rev. 2 - 2 

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**DMHT6016LFJ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|10.6<br>8.5|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|14.8<br>11.9|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|60|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|2|A|
|Avalanche Current(Note 7)L=0.1mH|||IAS|15.3|A|
|Avalanche Energy (Note 7)L=0.1mH|||EAS|11.7|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|1.16|W|
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|108|°C/W|
||t<10s||56||
|Total Power Dissipation(Note 6)||PD|2.7|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|46|°C/W|
||t<10s||24||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|4.4|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~———~~|**Symbol**<br>~~———~~|**Min**<br>~~———~~|**Typ**<br>~~———~~|**Max**<br>~~———~~|**Unit**<br>~~———~~|**Test Condition**<br>~~———~~|
|**OFF CHARACTERISTICS**(Note 8)<br>~~———~~|||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>~~———~~|60<br>~~———~~|—<br>~~———~~|—<br>~~———~~|V<br>~~———~~|VGS= 0V,ID= 250µA<br>~~———~~|
|Zero Gate Voltage Drain Current<br>~~———~~|IDSS<br>~~———~~|—<br>~~———~~|—<br>~~———~~|1<br>~~———~~|µA<br>~~———~~|VDS= 48V,VGS= 0V<br>~~———~~|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS=20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 8)|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)|1|—|3|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)|—|17|22|mΩ|VGS= 10V,ID= 10A|
|||—|22.2|30||VGS= 4.5V,ID= 6A|
|Diode Forward Voltage<br>~~a~~|VSD|—|0.7|1.2|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~enA~~|||||||
|Input Capacitance<br>~~——————~~|CISS<br>~~——————~~|—<br>~~——————~~<br>~~en~~|864<br>~~——————~~<br>~~en~~|—<br>~~——————~~<br>~~en~~|pF<br>~~——————~~<br>~~A~~|VDS= 30V, VGS= 0V,<br>f = 1MHz<br>~~——————~~|
|Output Capacitance<br>~~——————~~|COSS<br>~~——————~~|—<br>~~——————~~<br>~~en~~|282<br>~~——————~~<br>~~en~~|—<br>~~——————~~<br>~~en~~|||
|Reverse Transfer Capacitance<br>~~——————~~|CRSS<br>~~——————~~|—<br>~~——————~~<br>~~en~~|27<br>~~——————~~<br>~~en~~|—<br>~~——————~~<br>~~en~~|||
|Gate Resistance|RG|—<br>~~en~~|1.3<br>~~en~~|—<br>~~en ~~|Ω<br> ~~A~~|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|QG|—|8.4|—|nC|VDS= 30V, ID= 10A|
|Total Gate Charge(VGS= 10V)|QG|—|17|—|||
|Gate-Source Charge|QGS|—|3.1|—|||
|Gate-Drain Charge|QGD|—|4.3|—|||
|Turn-On DelayTime|tD(ON)|—|3.4|—|ns<br>~~—————~~<br>~~ee~~|VGS= 10V, VDS= 30V,<br>RG= 6Ω, ID= 10A<br>~~—————~~|
|Turn-On Rise Time|tR|—|5.2|—|||
|Turn-Off DelayTime|tD(OFF)<br>~~ee~~|—<br>~~ee~~|13<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—————~~|tF<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|7<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|||
|Reverse RecoveryTime<br>~~—————~~|tRR<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|22<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|ns<br>~~—————~~<br>~~ee~~|IF= 10A, di/dt = 100A/µs<br>~~—————~~|
|Reverse RecoveryCharge<br>~~—————~~|QRR<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|11<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|nC<br>~~—————~~<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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30 30<br>VGS = 10V<br>VGS = 6V VGS = 4V VDS = 5.0V<br>25 VGS  = 4.5V 25<br>20 20<br>VGS = 3.5V<br>1 5 ff — 15 eee<br>1 0 Wr 10 T A  = 150°C T A  = 25°C ie<br>VGS = 3V TA  = 125°C TA  = -55°C<br>5 YY 5 an TA  = 85°C fy<br>VGS  = 2.6V<br>0 0 | A 0.4 0.8 1.2 1.6 2 0 1 DyWf 1.5 2 2.5 3 3.5 | 4<br>V DS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.026 TLE LEE 0.1<br>0.024 VGS = 4.5V 0.08<br>ID = 10A<br>0.022<br>0.06 ID = 6A<br>0.02<br>reper 0.04 EEE<br>0.018 VGS = 10V<br>0.02<br>0.016 eer EEE<br>0.014 The 0 CS<br>0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.03 1.8<br>VGS  = 10V TA = 150°C<br>TA = 125°C 1.6 LEE VGS  = 4.5V L.<br>ID = 6A<br>0.025<br>TA  = 85°C 1.4 HE<br>VGS = 10V<br>0.02 ID = 10A<br>1.2 ttt<br>TA = 25°C<br>1<br>0.015 BEEZ Ane<br>TA  = -55°C<br>0.8<br>ett tt<br>0.01<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A) 0.6-50 PETE -25 0 25  ELE 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs.  TJ, JUNCTION TEMPERATURE (C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br> I<br>D<br>D<br>, DRAIN CURRENT (A)<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMHT6016LFJ** 

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0.04 2.2<br>To 2 Ree<br>0.035<br>VGS = 4.5V 1.8<br>0.03 Coe, I D  = 6A NSA<br>ID = 1mA<br>1.6<br>0.025 Tre CLESNGT ID = 250µA<br>1.4<br>VGS = 10V<br>0.02 BEEP apaLo I D  = 10A Pt SNNAN<br>1.2<br>0.015 sete EEN<br>1<br>oa Pi ii<br>0.01 Teo 0.8 EcLIiNS<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate ThrFigure 8 Gat e  Threshold Variation vs. Temperatureshold Variation vs. Ambient Temperature<br>30 10000<br>f=1MHz<br>25 oy === Ciss<br>1000<br>20 C oss<br>100<br>15 TA = 150°C TA = 25°C<br>TA = 125°C 10 Crss<br>TA = -55°C<br>10 TA = 85°C<br>1<br>5 7 —; +|__|<br>0 w/a 0 ero—<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50 60<br>V SD, SOURCE-DRAIN VOLTAGE (V) V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 100<br>R DS(on)<br>Limited<br>PW = 100µs<br>8 10<br>DC<br>6 1 PW = 10s<br>VDS = 30V P W  = 1s<br>4 ID = 10A 0. 1 PW = 100ms<br>PW = 10ms<br>T  = 150°C PW = 1ms<br>J(m ax)<br>2 0.01 TC = 25°C<br>VGS = 10V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 0 2 4 6 8 10 12 14 16 18 0.0010.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>DS(ON)<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>D<br>, DRAIN CURRENT (A)<br>I<br>, SOURCE CURRENT (A)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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Document number: DS37895 Rev. 2 - 2 

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1<br>D = 0.9<br>D = 0.7<br>Soe D = 0.5 ASS ETI FETEE TREO NSS atl<br>PTT<br>D = 0.3 EETSt<br>LTE Seer Tn<br>IM TTIIE TTPEM rreTLIE EUETLil<br>0.1 rece D = 0.1 [ee] tPFlaa<br>EE oe aee<br>EP D = 0.05 HATE<br>Ne oat om 7A<br>D = 0.02<br>EE mate At EG<br>a<br>0.01 CoTNa D = 0.01 a SeUMa oe eoee<br>mmm]<br>D = 0.005<br>by HetTi errAT TT OT RJA(t) = r(t)  *  RJA ill<br>D = Single Pulse R JA  = 113°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 Cornu 0.0001 ACEC 0.001 0.01 0.1 CCC 1 10 100 1000 i<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**V-DFN5045-12 (Type B)** 

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A1 A3<br>A V-DFN5045-12<br>S eating Plane (Type B)<br>Dim  Min  Max  Typ<br>es<br>A  0.75 0.85 0.80<br>D A1  0.00 0.05 0.02<br>D2a D2(2x) A3 –  –  0.203<br>b 0.25 0.35 0.30<br>‘aa e e EE D  4.95 5.05 5.00<br>E2(2x)<br>D2  2.00 2.20 2.10<br>D2a  1.60 1.80 1.70<br>E  4.45 4.55 4.50<br>E2  0.90 1.10 1.00<br>E2a 2.40 2.60 2.50<br>E E2a k1<br>e  –  –  0.80<br>k  –  –  0.50<br>k1  –  –  0.50<br>k2  –  –  0.50<br>k2<br>L  0.45 0.55 0.50<br>L z  –  –  0.35<br>All Dimensions in mm<br>k b<br>oo ou , ++ —<br>ot z e ===<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **V-DFN5045-12 (Type B)** 

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X3<br>C<br>G1<br>G2<br>' Dooo0g,<br>X2 X1 Y1<br>Y3 Y2<br>G<br>|jeSS<br>Y<br>ooo X<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  0.800<br>G  0.40<br>G1  0.40<br>G2  0.40<br>X  0.40<br>X1  2.20<br>X2  1.80<br>X3  4.40<br>Y  0.700<br>Y1  1.100<br>Y2  2.600<br>Y3  4.800<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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DMHT6016LFJ Document number: DS37895 Rev. 2 - 2 

November 2016 © Diodes Incorporated