DMHT10H032LFJ-13

**DMHT10H032LFJ** &, CCS **100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE** 

## DIODES. 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**BVDSS**|**RDS(ON) MAX**|**ID MAX**<br>**TA = +25°C**||
|100V|33mΩ@VGS= 10V|6A||
||50mΩ@VGS= 4.5V|5A||



## **Features** 

- Thermally Efficient Package – Cooler Running Applications 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On-State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Motor Control 

- DC-DC Converters 

- Power Management 

## **Mechanical Data** 

- Case: V-DFN5045-12 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.056 grams (Approximate) 

V-DFN5045-12 (Type C) 

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S3 7 Q3 Q2 6 S2<br>S2<br>Pin 1  S2  S3 8 5 S2<br>G2<br>S1/D2<br>D1  D2/S1  G3 9 4 G2<br>G1  D3/S4<br>D1  S4/D3 10 3 S1/D2<br>D4  S3<br>S3  D4 11 2 D1<br>G3<br>S4/D3<br>D4  G4 12 1 G1<br>G4  Q4 Q1<br>Top View  Bottom View<br>Internal Schematic<br>Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Case**|**Packaging**|
|---|---|---|
|DMHT10H032LFJ-13|V-DFN5045-12(Type C)|3,000/Tape &Reel|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

= Manufacturer’s Marking T1032LJ = Product Type Marking Code YYWW = Date Code Marking **T1032LJ** YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) **YY WW** 

1 of 7 **www.diodes.com** 

DMHT10H032LFJ Document number: DS42506 Rev. 2 - 2 

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**DMHT10H032LFJ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|100|V|
|Gate-Source Voltage|VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS = 10V|Steady State|TTAA = +25°C  = +70°C|ID|6 5|A|
|Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)|IDM|40|A|
|Maximum Continuous Body Diode Forward Current (Note 6)|IS|2.5|A|
|Pulsed Body Diode Current (10µs Pulse, Duty Cycle = 1%)|ISM|40|A|
|Avalanche Current (Note 7) L = 0.3mH|IAS|13|A|
|Avalanche Energy|(Note 7)  L = 0.3mH|EAS|25.3|mJ|

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## **Thermal Characteristics** 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Total Power Dissipation (Note 5)|PD|0.9|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|130|°C/W|
|Total Power Dissipation (Note 6)|PD|1.9|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|64|°C/W|
|Thermal Resistance, Junction to Case (Note 6)|RθJC|11|°C/W|
|Operating and Storage Temperature Range|TJ,|TSTG|-55 to +150|°C|

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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS|(Note 8)|
|Drain-Source Breakdown Voltage|BVDSS|100|—|—|V|VGS = 0V, ID = 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS = 80V, VGS = 0V|
|ee|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = 20V, VDS = 0V|
|ON CHARACTERISTICS|(Note 8)|
|Gate Threshold Voltage|VGS(TH)|1.3|—|2.5|V|VDS = VGS, ID = 250µA|
|Static Drain-Source On-Resistance|RDS(ON)|— —|2534|33 50|mΩ|VVGSGS = 10V = 4.5V, I, IDD = 6A  = 4A|
|rr|——|
|Diode Forward Voltage|VSD|—|0.8|1.0|V|VGS = 0V, IS = 6A|
|DYNAMIC CHARACTERISTICS|(Note 9)|
|Input Capacitance|Ciss|—|683|—|pF|
|Output Capacitance|Coss|—|165|—|pF|VDS = 50V, VGS = 0V,|
|f = 1MHz|
|Reverse Transfer Capacitance|Crss|—|6.9|—|pF|
|——|Gate Resistance|Rg|—|1.2|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|Total Gate Charge (VGS = 4.5V)|Qg|—|6.3|—|nC|
|Total Gate Charge (VGS = 10V)|Qg|—|11.9|—|nC|VDS = 50V, ID = 6A|
|Gate-Source Charge|Qgs|—|2.0|—|nC|
|Gate-Drain Charge|Qgd|—|3.1|—|nC|
|Turn-On Delay Time|tD(ON)|—|4.1|—|ns|
|Turn-On Rise Time|tR|—|4.5|—|ns|VDS = 50V, RL = 5.85Ω|
|Turn-Off Delay Time|tD(OFF)|—|12.5|—|ns|VGS = 10V, RGEN = 3Ω|
|————|Turn-Off Fall Time|=|tF|—|9.3|—|ns|ee|
|Reverse Recovery Time|tRR|—|31.5|—|ns|
|IF = 6A, di/dt = 500A/μs|
|or|Reverse Recovery Charge|QRR|—|94.6|—|nC|
|Notes:|5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.|

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6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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**DMHT10H032LFJ** 

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20 20<br>VDS = 5V<br>2 an VGS= 4.0V |<br>VGS= 4.5V<br>15 VGS = 6.0V 15<br>VGS = 8.0V VGS = 3.6V<br>10 VGS = 10.0V 10<br>VGS = 3.4V<br>TJ=125℃<br>5 VGS = 3.2V 5 TJ=85℃<br>y—__ __ TJ=150℃ f TJ=25℃<br>TJ=-55℃<br>0 a) 0<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.05 0.1<br>0.045 BRR<br>0.08<br>0.04 VGS = 4.5V<br>P re e<br>0.035 P eer y 0.06<br>0.03 TEE ID = 6.0A<br>0.04<br>0.025 EERE EEREEe<br>VGS = 10V<br>0.02 PEt EE [Tey] 0.02<br>0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.05 2<br>VGS = 10V aa TJ=150℃<br>0.045 1.8<br>0.04 c e ce TJ=125℃ 1.6 H H VGS = 10V, ID = 6.0A Hg<br>0.035<br>To TJ=85℃ 1.4 FE<br>0.03<br>TTT Tr 1.2 OK<br>0.025<br>0.02 ptt eT | TJ=25℃ 1 A VGS = 4.5V, ID  \ = 4.0A<br>0.015 TTTSe o t TJ=-55℃ 0.8 a aan<br>0.01 0.6<br>CEPEETE | AGRS0000<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)ID ID<br>)W<br>)(W<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)(W<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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0.08 2.6<br>0.07<br>P| | ty et 2.3 Pt | | | ft ft ff<br>0.06<br>pod 2 RR<br>0.05 VGS = 4.5V, ID = 4.0A ID = 1mA<br>0.04 pe 1.7 PS<br>Te -! :_<br>0.03<br>> - ee ae 1.4 Pf || ID = 250μA OK‘<br>0.02 VGS = 10V, ID = 6.0A<br>— fo 1.1 P OS S<br>0.01 | || N<br>0 0.8<br>PEEP ree EERE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>20 10000<br>18 VGS = 0V |i = f=1MHz —— ——<br>16<br>ee nn 1000 —f + FJ Ciss<br>14<br>12<br>10 eee || 100 e e Coss<br>8<br>TJ = 85℃<br>6<br>TJ = 125℃ 10<br>4 e/a N N<br>2 TJ = 150℃ TJ = 25℃ Crss<br>TJ = -55℃<br>0 — peYip 1 ———— a<br>0 0.3 0.6 0.9 1.2 1.5 0 20 40 60 80 100<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 100<br>RDS(ON)  PW =100µs<br>Limited<br>PW =1ms<br>8 10 PW =10ms<br>PW =100ms<br>PW =1s<br>6 1 ES Se<br>PW =10s<br>4 0.1<br>VDS = 50V, ID = 6A<br>TJ(Max) = 150 ℃  DC<br>2 0.01 TC = 25 ℃ in an<br>Single Pulse<br>DUT on 1*MRP Board<br>VGS = 10V<br>0 0.001<br>0 2 4 6 8 10 12 14 0.1 1 10 100 1000<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>)(W<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) VGS(TH)<br>R<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)T<br>C<br>(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>SSSSE<br>D=0.7<br>g e a<br>D=0.5 [LT] [aA] | NTT EHC HT<br>vin je [ETHEL] me | MN TI PTI PPP TT<br>D=0.3 D=0.9<br>MMT eae UTED. TTT<br>S T TN TTT get tt A EAI TIE UI<br>0.1 Le LA<br>D=0.1<br>of eesis ss sn sos cee<br>CoE a ee ee |<br>ee TT eeMCITIENTa eee a a |<br>D=0.05<br>Lamm aecoe MMO<br>a,<br>SS 4TTy¢ TT TT TT TT tt<br>D=0.02<br>0.01 S Lt [rr] OR. ee CU UMEE ETA LIME CIE VIE EIN<br>ee D=0.01 { SR<br>A OZ EEESPOTS SST<br>a ac A<br>A D=0.005 run  C TI<br>ll PUT TE TTI ETT<br>RθJA(t) = r(t) * RθJA<br>eeeHTML D=Single Pulse UII TAMETHA PTHEITM TEI PTHUTNEP HPITTI TT RθJA = 130℃/W llil<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMHT10H032LFJ Document number: DS42506 Rev. 2 - 2 

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**DMHT10H032LFJ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **V-DFN5045-12 (Type C)** 

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V-DFN5045-12<br>(Type C)<br>A Dim  Min  Max  Typ<br>Seating Plane A  0.75 0.85 0.80<br>}— A3 — A1  0.00 0.05 0.02<br>A3  --  --  0.203<br>A1<br>D b  0.25 0.35 0.30<br>D2 D2a b1  0.17  0.27  0.22<br>k b2  1.35 1.45 1.40<br>D  4.95 5.05 5.00<br>D2  1.84  2.04  1.94<br>D2a  2.20 2.40 2.30<br>E2 PIN1#ID e  --  --  0.80<br>E  4.45 4.55 4.50<br>E E2  1.16 1.36 1.26<br>k  --  --  0.31<br>k1 k1  --  --  0.36<br>z2 z3 L  0.45 0.55 0.50<br>L1  0.35 0.45 0.40<br>z  --  --  0.35<br>L L1 z1  --  --  0.20<br>z2  --  --  0.20<br>e z1<br>b1 z3  --  --  0.36<br>z b b2 All Dimensions in mm<br>yout out<br>V-DFN5045-12 (Type C)<br>X5<br>Value<br>X4 Dimensions  (in mm)<br>C G2 C  0.800<br>G  0.250<br>G4<br>G1  0.260<br>G2  0.310<br>G3  0.180<br>Y2(4x) G4  0.260<br>G1 G3 X  0.400<br>Y3 X1  1.500<br>X2  2.040<br>X2(2x) X3(2x) X3  2.400<br>X4  4.550<br>Y1 X5  4.700<br>Y  0.700<br>Y1  0.700<br>Y2  1.260<br>Y(8x) cTeea X(8x) G oot X1(2x) Y3  4.800<br>ies<br>6 of 7<br>www.diodes.com<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

DMHT10H032LFJ Document number: DS42506 Rev. 2 - 2 

June 2020 © Diodes Incorporated 

**DMHT10H032LFJ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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DMHT10H032LFJ Document number: DS42506 Rev. 2 - 2 

June 2020 © Diodes Incorporated