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DMHC4035LSDQ-13
Dual MOSFET, Complementary Dual N and Dual P Channel, 40 V, 40 V, 4.5 A, 4.5 A, 0.045 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary Dual N and Dual P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.5W
- Power Dissipation P Channel: 1.5W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 4.5A
- Continuous Drain Current Id P Channel: 4.5A
- Drain Source On State Resistance N Channel: 0.045ohm
- Drain Source On State Resistance P Channel: 0.065ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.385 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DMHC4035LSDQ**
## **40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE**
## **Product Summary**
|**Device**<br>**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>N-Channel<br>40V<br>45mΩ @ VGS= 10V<br>4.5A<br>58mΩ@VGS= 4.5V<br>4A<br>P-Channel<br>-40V<br>65mΩ@VGS= -10V<br>-3.7A<br>100mΩ@VGS= -4.5V<br>-2.9A|**Device**<br>**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>N-Channel<br>40V<br>45mΩ @ VGS= 10V<br>4.5A<br>58mΩ@VGS= 4.5V<br>4A<br>P-Channel<br>-40V<br>65mΩ@VGS= -10V<br>-3.7A<br>100mΩ@VGS= -4.5V<br>-2.9A|**Device**<br>**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>N-Channel<br>40V<br>45mΩ @ VGS= 10V<br>4.5A<br>58mΩ@VGS= 4.5V<br>4A<br>P-Channel<br>-40V<br>65mΩ@VGS= -10V<br>-3.7A<br>100mΩ@VGS= -4.5V<br>-2.9A|**Device**<br>**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>N-Channel<br>40V<br>45mΩ @ VGS= 10V<br>4.5A<br>58mΩ@VGS= 4.5V<br>4A<br>P-Channel<br>-40V<br>65mΩ@VGS= -10V<br>-3.7A<br>100mΩ@VGS= -4.5V<br>-2.9A|
|---|---|---|---|
|**Device**|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|N-Channel|40V|45mΩ @ VGS= 10V|4.5A|
|||58mΩ@VGS= 4.5V|4A|
|P-Channel|-40V|65mΩ@VGS= -10V|-3.7A|
|||100mΩ@VGS= -4.5V|-2.9A|
## **Description and Applications**
This new generation complementary MOSFET H-Bridge features 2 N and 2 P channels in an SO-8 package. Qualified to AEC-Q101 the H bridge is ideally suited to driving :
- Solenoids
- DC Motors
- Audio Outputs
## **Features**
- 2 x N + 2 x P Channels in An SO-8 Package
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Mechanical Data**
- Case: SO-8
- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See Diagram
- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.074 grams (Approximate)
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P1S/P2S<br>SO-8 P1G<br>Z a Z Z<br>> H-Bridge -<br>Ooo<br>f° N1G<br>x<br>N1S/N2S<br>Top View<br>Top View Pin Configuration Internal Schematic<br>P1G P1S/P2S N2D/P2D P2G<br>N1G N1D/P1D N1S/N2S N2G<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 5)
|**Ordering Informationg Information Information** (Note 5)||||
|---|---|---|---|
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|DMHC4035LSDQ-13|Automotive|SO-8|2,500/Tape & Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
## **Marking Information**
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8 5<br>di1 |<br>C4035LS<br>YY WW<br>1 4<br>**----- End of picture text -----**<br>
3 = Manufacturer’s Marking C4035LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53)
1 of 9 **www.diodes.com**
DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2
March 2018 © Diodes Incorporated
**DMHC4035LSDQ**
**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)||PD|1.5|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|85|°C/W|
||t<10s||53||
|Thermal Resistance, Junction to Case||RθJC|15||
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
## **Maximum Ratings N-CHANNEL** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.5<br>3.5|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|5.8<br>4.5|A|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4<br>3.1|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|5.1<br>4|A|
|Maximum Continuous BodyDiode Forward Current (Note 6)|||IS|1.5|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|25|A|
## **Maximum Ratings P-CHANNEL** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.7<br>-2.9|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-4.8<br>-3.8|A|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.9<br>-2.3|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-3.9<br>-3.0|A|
|Maximum Continuous BodyDiode Forward Current (Note 6)|||IS|-1.5|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|-15|A|
Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
2 of 9 **www.diodes.com**
DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2
March 2018 © Diodes Incorporated
**DMHC4035LSDQ**
## **Electrical Characteristics N-CHANNEL** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|40|—|—|V|VGS= 0V, ID= 250μA|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|1<br>~~a~~|μA<br>~~a~~|VDS= 40V, VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS= ±20V, VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1<br>~~ee~~|—<br>~~ee~~|3<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~|—<br>~~a~~|26<br>~~a~~|45<br>~~a~~|mΩ<br>~~a~~|VGS= 10V, ID= 3.9A<br>~~a~~|
|||—<br>~~a~~|35<br>~~a~~|58<br>~~a~~||VGS= 4.5V, ID= 3.5A<br>~~a~~|
|Diode Forward Voltage<br>~~a~~<br>~~Sa~~|VSD<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~aa~~|0.7<br>~~a~~<br>~~aa~~|1<br>~~a~~<br>~~tp~~|V<br>~~a~~<br>~~tp~~|VGS= 0V, IS= 1.25A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~Saaaa~~<br>~~tp~~|||||||
|Input Capacitance<br>~~Sa~~|Ciss<br>~~a~~|—<br>~~aa~~|574<br>~~aa~~|—<br>~~tp~~|pF<br>~~tp~~|VDS= 20V, VGS= 0V,<br>f = 1MHz|
|Output Capacitance<br>~~Sa ~~<br>~~Ce~~|Coss<br> ~~a~~|—<br>~~a a~~|87.8<br>~~a a~~|—<br>~~tp~~|||
|Reverse Transfer Capacitance|Crss|—|38.7|—|||
|Gate Resistance|Rg|—|1.6|—|Ω|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|5.9|—|nC|VDS= 20V, ID= 3.9A|
|Total Gate Charge(VGS= 10V)|Qg|—|12.5|—|||
|Gate-Source Charge|Qgs|—|1.7|—|||
|Gate-Drain Charge|Qgd|—|2.2|—|||
|Turn-On DelayTime|tD(ON)|—|3.1|—|ns<br>~~—————~~<br>~~ee~~|VDD= 20V, VGS= 10V,<br>RL= 20Ω, RG= 6Ω<br>~~—————~~|
|Turn-On Rise Time|tR|—|2.6|—|||
|Turn-Off DelayTime|tD(OFF)|—<br>~~ee~~|15<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—————~~|tF<br>~~—————~~|—<br>~~—————~~<br>~~ee~~|5.5<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|||
|Reverse RecoveryTime<br>~~—————~~|tRR<br>~~—————~~|—<br>~~—————~~<br>~~ee~~|6.5<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|ns<br>~~—————~~<br>~~ee~~|IF= 3.9A, di/dt = 500A/μs<br>~~—————~~|
|Reverse RecoveryCharge<br>~~—————~~|QRR<br>~~—————~~|—<br>~~—————~~<br>~~ee~~|1.2<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|nC<br>~~—————~~<br>~~ee~~||
## **Electrical Characteristics P-CHANNEL** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-40|—|—|V|VGS= 0V, ID= -250μA|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|-1<br>~~ee~~|μA<br>~~ee~~|VDS= -40V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~Ct~~|VGS(TH)<br>~~Ct~~|-1<br>~~Ct~~|—<br>~~Ct~~|-3<br>~~Ct~~|V<br>~~Ct~~|VDS= VGS, ID= -250μA<br>~~Ct~~|
|Static Drain-Source On-Resistance<br>~~ne~~|RDS(ON)<br>~~ne~~|—<br>~~ne~~|49<br>~~ne~~|65<br>~~ne~~|mΩ<br>~~ne~~<br>~~a~~|VGS= -10V, ID= -4.2A<br>~~ne~~|
|||—<br>~~ne~~<br>~~ee~~|73<br>~~ne~~<br>~~ee~~|100<br>~~ne~~<br>~~ee a~~||VGS= -4.5V, ID= -3.3A<br>~~ne~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|-0.7<br>~~ee~~<br>~~ee~~|-1.2<br>~~ee~~<br>~~ee a~~|V<br>~~ee~~<br>~~a~~|VGS= 0V, IS= -1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~<br>~~eeeeee a~~<br>~~eeee ee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~ee ~~<br>~~es~~<br>~~ee~~|587<br> ~~ee ~~<br>~~es~~<br>~~ee~~|—<br> ~~ee a~~<br>~~es~~<br>~~ee~~|pF<br>~~a~~<br>~~es~~<br>~~ee ee~~|VDS= -20V, VGS= 0V,<br>f = 1MHz<br>~~es~~<br>~~ee~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|88.1<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee ee~~||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|40.2<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee ee~~||
|Gate Resistance<br>~~—<—<——_—$_—~~|Rg<br>~~ee~~<br>~~—<—<——_—$_—~~|—<br>~~ee~~|12.3<br>~~ee ~~|—<br> ~~ee~~|Ω<br>~~ee ee~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~—<—<——_—$_—~~|Qg<br>~~—<—<——_—$_—~~|—|5.4|—|nC<br>~~e~~|VDS= -20V, ID= -4.2A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~—<—<——_—$_—~~|Qg<br>~~—<—<——_—$_—~~|—|11.1|—|nC<br>~~e~~||
|Gate-Source Charge<br>~~—<—<——_—$_—~~|Qgs<br>~~—<—<——_—$_—~~|—|1.5|—|nC<br>~~e~~||
|Gate-Drain Charge<br>~~—<—<——_—$_—~~|Qgd<br>~~—<—<——_—$_—~~|—|2|—|nC<br>~~e~~||
|Turn-On DelayTime<br>~~—<—<——_—$_—~~|tD(ON)<br>~~—<—<——_—$_—~~|—|3.6|—|ns<br>~~e~~|VDD= -15V, VGS= -10V,<br>RG= 6Ω, ID= -1A<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—<——_—$_—~~|tR<br>~~—<—<——_—$_—~~|—|2.9|—|ns<br>~~e~~||
|Turn-Off DelayTime|tD(OFF)|—|36.3|—|ns||
|Turn-Off Fall Time|tF|—|15.3|—|ns||
|Reverse RecoveryTime|tRR|—|15.5|—|ns|IF= -4.2A, di/dt = 500A/μs|
|Reverse RecoveryCharge|QRR|—|16.9|—|nC||
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
3 of 9 **www.diodes.com**
DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2
March 2018 © Diodes Incorporated
**DMHC4035LSDQ**
## **Typical Characteristics - N-CHANNEL**
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20 20<br>VGS = 10V VGS = 3.5V V = 5.0VDS<br>18 7 a 18 a cenn a<br>VGS = 5.0V<br>16 Tt = 16 HEE<br>)<br>14 VGS = 4.5V [A] (T 14<br>N<br>12 aa[ ER 12 SSneeeSaGGee/ i ie<br>10 | VGS = 4.0V V GS = 3.0V RUC 10 Sane J<br>8 fo I [N] A 8 Saeee0 Seen<br>R<br>D<br>6 | >= aan I [,] D 6 Senne) T = 150°CA see T = 85°CA<br>42 Aaa V GS = 2.3V VGS = 2.5V 42 Sf T = 125°CA T = 25°CA<br>Za Wp<br>T = -55°CA<br>0 a 0 DR<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.05 0.2<br>0.045 0.18 I D = 3.9A<br>TEE E tT Ty frit ttt tt<br>0.16<br>0.04<br>Coo VGS = 4.5V 0.14 EEE<br>0.035 ID = 3.5A<br>PT ery 0.12 ce<br>0.03 VGS = 10V 0.1<br>Easeegene= See<br>0.025 AECL 0.08 TCE<br>0.06<br>0.02<br>PEEP AR<br>0.04<br>0.015<br>0.02<br>{titty Tt CSS<br>0.01 0 EET 2 4 6 TTT 8 10 12 EET 14 16 18 20 0 0 EET 2 4 6 TTT 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.08 1.8<br>)(ECN 0.07 | V = 4.5VGS |e T = 150°CA 1.6 VIGS D = 10= 10AV /<br>T [A]<br>I [S] SE 0.06 mee T = 125°CA T = 85°CA 1.4 af<br>- [R] 0.05 VGS = 5V<br>O [N] ae ete 7, ID = 5A<br>EC 0.04 rere T = 25°CA 1.2 EERE ae<br>R<br>O [U] 0.03<br>- [S] TET Tey T = -55°CA | | 1 SeEVanae<br>I [N] A 0.02<br>R<br>D i 0.8 Sp2nnnne<br>, ) 0.01<br>( [ON] S titty yyy yy a<br>D<br>R 0 SEeSnee0ne 0.6 ZeGnnaee<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>I , DRAIN CURRENT (A)D TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br> I<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>
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0.08<br>0.07<br>0.06 “TELL.<br>[ttt V tt GS = 5V te<br>0.05 I D = 5A<br>0.04 eeCET eer<br>0.03 VIGSD = 10A 10= V<br>0.02 EreeeyT | | tHLd<br>0.01<br>0 TEEPE“TPP<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature<br>20<br>18<br>Sy<br>16<br>)<br>[A] ee |<br>14<br>N [T(]<br>12<br>ee |<br>C [URRE] 10 T = 150°CA<br>8 ffla Hy T = 25°CA<br>U [RCE] O T = 125°CA<br>S 6 IL<br>S<br>I [,] 4 T = 85°CA ST T = -55°CA<br>2 — [<HR]<br>0 DW)<br>0 0.3 0.6 0.9 1.2 1.5<br>V , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 9 Diode Forward Voltage vs. Current<br>10<br>VDS = 20V<br>ID 3.9= A<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 11 Gate Charge<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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2.5<br>)<br>( [V]<br>G [E]<br>2 TTT ITT<br>O [LTA] -<br>V<br>I = 1mAD<br>H [OLD] S 1.5 SS_™_ I = 250µAD<br>T [HRE]<br>T [E]<br>G [A] 1 (TTRSSSS<br>, [h)] ( [t] S<br>G<br>V<br>0.5 PTET yyy<br>-50 -25 0 25 50 75 100 125 150<br>T , JUNCTION TEMPERATURE (C)J <br>Figure 8 Gate Threshold Variation vs. Junction Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>
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1000<br>C iss<br>===<br>EE<br>NEE EE HH<br>100<br>Coss<br>See<br>———<br>Ft<br>C rss<br>tt<br>FEE<br>es<br>10 rem] fot | fe<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>100<br>10<br>DC<br>1 P W = 10s<br>PW = 1s<br>P W = 100ms<br>P W = 10ms J NWR INET<br>0.1 TTJA( = 25max25) °= 癈 C 15 00° 癈 C P W = 1ms PW = 100100 祍 µs<br>V GS = 4.5V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01 ELTA ET<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>
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## **Typical Characteristics - P-CHANNEL**
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15 15<br>VGS = -10V V = -5.0VDS<br>VGS = -3.5V<br>12 ffi VGS = -5.0V 12 eee i<br>[A)]<br>T [(]<br>9 [N] E 9<br>R<br>p VGS = -3.0V o RU<br>C<br>6 | [IN] A 6 aan<br>R<br>D<br>D<br>3 VGS = -2.5V - [I,] 3 T = 150°CA T = 85°CA<br>| ey T = 125°CA T = 25°CA<br>VGS = -2.0V T = -55°CA<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -V , GATE-SOURCE VOLTAGE (V)GS<br>Figure 13 Typical Output Characteristics Figure 14 Typical Transfer Characteristics<br>0.2 0.5<br>ID = -4.2A<br>0.18 COC EEE 0.45 FTE<br>0.16 0.4<br>0.140.12 CECEEEECEECECE EY 0.350.3 SEESPCC EEE<br>0.1 VGS = -4.5V 0.25<br>Co er ECE ID = -3.3A EEE<br>0.08 Eee 0.2 TPR OEE<br>0.06 SEEPS V GS = -10V 0.15 TCC<br>0.040.02 SEECCEEa 0.050.1 TAPETAREREEL EEE<br>0 CEE EEE 0 FELEEPEE E HE<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15 Typical On-Resistance vs. Figure 16 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.2 1.8<br>VGS = -4.5V<br>0.18 VGS = -10V<br>1.6 ID = -10A<br>0.16 EAT TA = 150C 4<br>0.14<br>ee ee 1.4 Toy<br>a TA = 125C OK<br>0.12<br>TA = 85C VGS = -5V<br>0.1 T A = 25C 1.2 I D = -5A<br>0.08<br>0.06 Seara= T A = -55C 1 yeTHT<br>TEE rt S<br>0.04<br>0.8<br>0.02 SS<br>0 ee 0.6 LE EEL EL<br>0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 17 Typical On-Resistance vs. Figure 18 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>-I<br>D<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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0.15<br>0.12<br>VGS = -5V<br>0.09 PPPTT ID -5= A bee<br>VGS = -10V<br>0.06 pan I D -10= A<br>0.03 aas<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 19 On-Resistance Variation with Temperature<br>15<br>12 ee |<br>9<br>TA= 85C<br>6 TA= 125C UH In hf T A = 25C<br>TA= 150C<br>3 TA= -55C<br>0 LLL)<br>0 0.3 0.6 0.9 1.2 1.5<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 21 Diode Forward Voltage vs. Current<br>10<br>8<br>6<br>VDS = -20V<br>ID = -4.2A<br>4<br>2<br>0<br>0 2 4 6 8 10 12<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 23 Gate-Charge Characteristics<br>DS(on)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>S<br>, SOURCE CURRENT (A)<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>
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2<br>)<br>( [V] 1.8<br>G [E]<br>1.6<br>O [LTA]<br>V<br>SEREREEE -I = 250µAD<br>1.4<br>H [OLD]<br>S -I =1mAD<br>1.2 Oe<br>T [HRE]<br>T [E] 1 ft tt<br>G [A] SSN<br>, )H<br>0.8 FECES<br>( [T]<br>G [S]<br>V<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>T , AMBIENT TEMPERATURE (°C)A<br>Figure 20 Gate Threshold Variation vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>**----- End of picture text -----**<br>
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1000<br>Ciss<br>a e se ed es<br>a ee ee<br>Kt | | tf ft ff<br>100 SSSRye Coss<br>Se Crss<br>10 crm LEE EE<br>0 5 10 15 20 25 30 35 40<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 22 Typical Junction Capacitance<br>100<br>uimted) EE<br>a a ttt<br>10<br>DC<br>1 PW = 10s<br>PW = 1s<br>P W = 100ms<br>P W = 10ms<br>|| PSS SOSH<br>0.1 TJ(max) = 150 癈 °C PW = 1ms<br>TA = 25 ° 癈 C PW = 100100 祍 µs<br>VGS = -4.5V<br>Single Pulse eee<br>0.01 DUT on 1 * MRP Board eeill<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 24 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
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1 D = 0.9<br>D = 0.7<br>D = 0.5<br>eeEe<br>eT D = 0.3 renee ee: nT ee eee<br>0.1 BAe D = 0.1 eo ANA<br>er eat ee<br>D = 0.05<br>UN oy coast l eoat<br>D = 0.02<br>AG i at a a<br>0.01 TCT D = 0.01 CUI CECE COC<br>D = 0.005<br>ee RJA(t) = r(t) * RJA<br>D = Single Pulse R JA = 110 癈 °C /W<br>Duty Cycle, D = t1/ t2<br>0.001 Se enEen I |/ e Ne tii AMaath VAN AH VANE |[|<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**==> picture [415 x 152] intentionally omitted <==**
**----- Start of picture text -----**<br>
SO-8<br>ee Dim Min ee Max ee Typ<br>| + E Psee A 1.4 ee 0 1.50 1.45<br>A1 0.10 0.20 0.15<br>1 b 0.30 0.50 0.40<br>= ee ee<br>c 0.15 0.25 0.20<br>D a sD ee ee<br>U UU u ee D 4.85 ee 4.95 4.90<br>b E1 ; E | 5.90 {[ 6.10 f{[ 6.00 |<br>h E1 3.80 3.90 3.85<br>Q E0 3.85 3.95 3.90<br>7°<br>7 c ee e -- ee -- 1.27<br>ft A 4°± 3° ee h ee - -- 0.35<br>THR: 7 GS eating Planeauge Plane —+-—}— L 0.62 0.82 0.72<br>eD A1 E0 L |eesss QAll Dimensions in mm 0.60 0.70 + 0.65 +<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
|X1||||||
|---|---|---|---|---|---|
|C<br>X<br>Y<br>Y1<br>~~NOOO~~<br>|~~1~~<br>~~loNom~~<br>~~He~~<br>~~feet~~<br>~~e~~f<br>~~Le~~|||**Dimensions V**<br>**C**<br>**X**<br>**X1**<br>**Y**<br>**Y1**|**V**|**Value (in mm)**<br>1.27<br>0.802<br>4.612<br>1.505<br>6.50|
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## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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Updated at June 9, 2026
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