DMHC4035LSD-13

Dual MOSFET, Complementary Dual N and Dual P Channel, 40 V, 40 V, 4.5 A, 4.5 A, 0.045 ohm

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Manufacturer: DIODES INC.
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: Complementary Dual N and Dual P Channel
Product Range: -
Qualification: -
Transistor Case Style: SOIC
Operating Temperature Max: 150°C
Power Dissipation N Channel: 1.5W
Power Dissipation P Channel: 1.5W
Drain Source Voltage Vds N Channel: 40V
Drain Source Voltage Vds P Channel: 40V
Continuous Drain Current Id N Channel: 4.5A
Continuous Drain Current Id P Channel: 4.5A
Drain Source On State Resistance N Channel: 0.045ohm
Drain Source On State Resistance P Channel: 0.065ohm
Delivery and price
Units per pack	5000
Price	0.335 €
Current stock	10+
Lead time	30 days
Datasheet
**DMHC4035LSD** 

**40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE** 

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Product Summary Features<br>ID max • 2 x N + 2 x P channels in a SOIC package<br> Device  V(BR)DSS RDS(ON) max  TA = +25°C  • Low On-Resistance<br>45mΩ @ VGS = 10V  4.5A  • Low Input Capacitance<br>N-Channel  40V<br>58mΩ @ VGS = 4.5V  4A  • Fast Switching Speed<br>65mΩ @ VGS = -10V  -3.7A  •<br>P-Channel  -40V  100mΩ @ VGS = -4.5V  -2.9A  •<br>•<br>Description<br>Mechanical Data<br>This new generation complementary MOSFET H-Bridge features low<br>• Case: SO-8<br>on-resistance achievable with low gate drive.<br>•<br>UL Flammability Classification Rating 94V-0<br>Applications  • Moisture Sensitivity: Level 1 per J-STD-020<br>• DC Motor Control   • Terminal Connections Indicator: See diagram<br>• DC-AC Inverters  • Terminals: Finish ⎯⎯ Matte Tin annealed over Copper leadframe.<br>Solderable per MIL-STD-202, Method 208<br>: 1 nN c o R P o R A T i D<br>• Weight: 0.074 grams (approximate)<br>P1S/P2S<br>SO-8  P1G<br>Z a Z 7<br>H-Bridge P1D/N1D<br>LIU Oo<br>N1G<br>N1S/N2S<br>Top View<br>Top View  Pin Configuration  Internal Schematic<br>NEW PRODUCT<br>NEW PRODUCT<br>ADVANCE INFORMATION<br>P1G P1S/P2S N2D/P2D P2G<br>N1G N1D/P1D N1S/N2S N2G<br>**----- End of picture text -----**<br>


- 2 x N + 2 x P channels in a SOIC package 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See diagram 

- Terminals: Finish ⎯⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- • Weight: 0.074 grams (approximate) 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)||||
|---|---|---|---|
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|DMHC4035LSD-13|Standard|SO-8|2500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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8 5<br>Jttt<br>C4035LS<br>YY WW<br>1 4<br>**----- End of picture text -----**<br>


> = Manufacturer’s Marking a C4035LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) 

1 of 9 **www.diodes.com** 

DMHC4035LSD Document number: DS36287  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

|NEW PRODUCT<br>ADVANCE INFORMATION<br>NEW PRODUCT<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>Total Power Dissipation (Note 5)<br>PD<br>Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RθJA<br>t<10s<br>Thermal Resistance, Junction to Case<br>RθJC<br>Operating and Storage Temperature Range<br>TJ,TSTG<br>**Maximum Ratings N-CHANNEL**(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>Drain-Source Voltage<br>VDSS<br>Gate-Source Voltage<br>VGSS<br>Continuous Drain Current (Note 5) VGS= 10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>~~E~~|**DMHC4035LSD**<br>**Value**<br>**Units**<br>1.5<br>W<br>85<br>°C/W<br>53<br>15<br>-55 to +150<br>°C<br>**Value**<br>**Units**<br>40<br>V<br>±20<br>V<br>4.5<br>3.5<br>A<br>5.8<br>4.5<br>A<br>4<br>3.1<br>A<br>~~Cd~~|
|---|---|



|**DMHC4035LSD**<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation (Note 5)<br>PD<br>1.5<br>W<br>Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RθJA<br>85<br>°C/W<br>t<10s<br>53<br>Thermal Resistance, Junction to Case<br>RθJC<br>15<br>Operating and Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C<br>**Maximum Ratings N-CHANNEL**(@TA= +25°C, unless otherwise specified.)<br>~~E~~<br>~~Cd~~|**DMHC4035LSD**<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation (Note 5)<br>PD<br>1.5<br>W<br>Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RθJA<br>85<br>°C/W<br>t<10s<br>53<br>Thermal Resistance, Junction to Case<br>RθJC<br>15<br>Operating and Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C<br>**Maximum Ratings N-CHANNEL**(@TA= +25°C, unless otherwise specified.)<br>~~E~~<br>~~Cd~~|**DMHC4035LSD**<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation (Note 5)<br>PD<br>1.5<br>W<br>Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RθJA<br>85<br>°C/W<br>t<10s<br>53<br>Thermal Resistance, Junction to Case<br>RθJC<br>15<br>Operating and Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C<br>**Maximum Ratings N-CHANNEL**(@TA= +25°C, unless otherwise specified.)<br>~~E~~<br>~~Cd~~|**DMHC4035LSD**<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation (Note 5)<br>PD<br>1.5<br>W<br>Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RθJA<br>85<br>°C/W<br>t<10s<br>53<br>Thermal Resistance, Junction to Case<br>RθJC<br>15<br>Operating and Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C<br>**Maximum Ratings N-CHANNEL**(@TA= +25°C, unless otherwise specified.)<br>~~E~~<br>~~Cd~~|**DMHC4035LSD**<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation (Note 5)<br>PD<br>1.5<br>W<br>Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RθJA<br>85<br>°C/W<br>t<10s<br>53<br>Thermal Resistance, Junction to Case<br>RθJC<br>15<br>Operating and Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C<br>**Maximum Ratings N-CHANNEL**(@TA= +25°C, unless otherwise specified.)<br>~~E~~<br>~~Cd~~|**DMHC4035LSD**<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation (Note 5)<br>PD<br>1.5<br>W<br>Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RθJA<br>85<br>°C/W<br>t<10s<br>53<br>Thermal Resistance, Junction to Case<br>RθJC<br>15<br>Operating and Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C<br>**Maximum Ratings N-CHANNEL**(@TA= +25°C, unless otherwise specified.)<br>~~E~~<br>~~Cd~~|
|---|---|---|---|---|---|
|~~E~~<br>~~Cd~~||||||
|**Characteristic**<br>~~E~~|||**Symbol**|**Value**<br>~~Cd~~|**Units**<br>~~Cd~~|
|Drain-Source Voltage<br>~~E~~|||VDSS|40<br>~~Cd~~|V<br>~~Cd~~|
|Gate-Source Voltage<br>~~E~~|||VGSS|±20<br>~~Cd~~|V<br>~~Cd~~|
|Continuous Drain Current (Note 5) VGS= 10V<br>~~E~~|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.5<br>3.5<br>~~Cd~~|A<br>~~Cd~~|
||t<10s|TA= +25°C<br>TA= +70°C|ID|5.8<br>4.5|A|
|Continuous Drain Current (Note 5) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4<br>3.1|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|5.1<br>4|A|
|Maximum Continuous Body Diode Forward Current (Note 5)|||IS|1.5|A|
|Pulsed Drain Current (10µs pulse, duty cycle = 1%)|||IDM|25|A|



**Maximum Ratings P-CHANNEL** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.7<br>-2.9|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-4.8<br>-3.8|A|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.9<br>-2.3|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-3.9<br>-3.0|A|
|Maximum Continuous Body Diode Forward Current (Note 5)|||IS|-1.5|A|
|Pulsed Drain Current (10µs pulse, duty cycle = 1%)|||IDM|-15|A|



Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

2 of 9 **www.diodes.com** 

DMHC4035LSD Document number: DS36287  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**DMHC4035LSD** 

## **Electrical Characteristics N-CHANNEL** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6) **|||||||
|Drain-Source Breakdown Voltage<br>~~———————~~|BVDSS<br>~~———————~~|40<br>~~———————~~|—<br>~~———————~~|—<br>~~———————~~|V<br>~~———————~~|VGS= 0V, ID= 250μA<br>~~———————~~|
|Zero Gate Voltage Drain Current<br>~~———————~~|IDSS<br>~~———————~~|—<br>~~———————~~|—<br>~~———————~~|1<br>~~———————~~|μA<br>~~———————~~|VDS= 40V, VGS= 0V<br>~~———————~~|
|Gate-Source Leakage<br>~~———————~~|IGSS<br>~~———————~~|—<br>~~———————~~|—<br>~~———————~~|±100<br>~~———————~~|nA<br>~~———————~~|VGS= ±20V, VDS= 0V<br>~~———————~~|
|**ON CHARACTERISTICS(Note 6) **<br>~~COGO~~|||||||
|Gate Threshold Voltage<br>~~GO~~|VGS(th)<br>~~GO~~|1<br>~~GO~~|—<br>~~GO~~<br>~~CO~~|3<br>~~GO~~<br>~~CO~~|V<br>~~GO~~<br>~~GO~~|VDS= VGS, ID= 250μA<br>~~GO~~<br>~~GO~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~|—<br>~~ee~~|26<br>~~CO~~<br>~~ee~~|45<br>~~CO ~~<br>~~ee~~|mΩ<br> ~~GO~~<br>~~ee~~<br>~~GO~~|VGS= 10V, ID= 3.9A<br>~~GO~~<br>~~ee~~|
|||—<br>~~ee~~|35<br>~~ee~~|58<br>~~ee~~||VGS= 4.5V, ID= 3.5A<br>~~ee~~<br>~~(OS~~|
|Diode Forward Voltage<br>~~DO~~|VSD<br>~~DO~~|—<br>~~DO~~|0.7<br>~~DO~~|1<br>~~DO~~|V<br>~~DO~~<br>~~GO~~|VGS= 0V, IS= 1.25A<br>~~DO~~<br>~~(OS~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~GO (OS~~|||||||
|Input Capacitance<br>~~pt~~|Ciss|—|574|—|pF|VDS= 20V, VGS= 0V,<br>f = 1MHz|
|Output Capacitance|Coss|—|87.8|—|||
|Reverse Transfer Capacitance|Crss|—|38.7|—|||
|Gate resistance<br>~~———~~|Rg|—|1.6|—<br>~~e~~|Ω<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~a~~<br>~~———~~|Qg<br>~~a~~|—<br>~~a~~|5.9<br>~~a~~|—<br>~~a~~<br>~~e~~|nC<br>~~e~~|VDS= 20V, ID= 3.9A<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg|—|12.5|—<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|Qgs|—|1.7|—<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~|Qgd|—|2.2|—<br>~~e~~|||
|Turn-On Delay Time<br>~~———~~<br>~~a~~|tD(on)<br>~~a~~|—<br>~~a~~|3.1<br>~~a~~|—<br>~~e~~<br>~~a~~|ns<br>~~e~~|VDD= 20V, VGS= 10V,<br>RL= 20Ω, RG= 6Ω,<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~pt~~|tr|—|2.6|—<br>~~e~~|||
|Turn-Off Delay Time|tD(off)|—|15|—|||
|Turn-Off Fall Time|tf|—|5.5|—|||
|Reverse Recovery Time<br>~~—~~|trr<br>~~—~~|—<br>~~—~~|6.5<br>~~—~~|—<br>~~—~~|ns<br>~~—~~|IF= 3.9A, di/dt = 500A/μs<br>~~—~~|
|Reverse Recovery Charge<br>~~—~~|Qrr<br>~~—~~|—<br>~~—~~|1.2<br>~~—~~|—<br>~~—~~|nC<br>~~—~~||



## **Electrical Characteristics P-CHANNEL** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6) **|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-40<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|-1<br>~~ee~~|μA<br>~~ee~~|VDS= -40V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 6)**<br>~~SSS~~|||||||
|Gate Threshold Voltage<br>~~SSS~~|VGS(th)<br>~~SSS~~|-1<br>~~SSS~~|—<br>~~SSS~~|-3<br>~~SSS~~|V<br>~~SSS~~|VDS= VGS, ID= -250μA<br>~~SSS~~|
|Static Drain-Source On-Resistance<br>~~SSS~~<br>~~———~~|RDS (ON)<br>~~SSS~~<br>~~———~~|—<br>~~SSS~~<br>~~———~~|49<br>~~SSS~~<br>~~———~~|65<br>~~SSS~~<br>~~———~~|mΩ<br>~~SSS~~<br>~~———~~|VGS= -10V, ID= -4.2A<br>~~SSS~~<br>~~———~~|
|||—<br>~~SSS~~<br>~~———~~|73<br>~~SSS~~<br>~~———~~|100<br>~~SSS~~<br>~~———~~||VGS= -4.5V, ID= -3.3A<br>~~SSS~~<br>~~———~~|
|Diode Forward Voltage<br>~~———~~|VSD<br>~~———~~|—<br>~~———~~|-0.7<br>~~———~~|-1.2<br>~~———~~|V<br>~~———~~|VGS= 0V, IS= -1A<br>~~———~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~———~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|587<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= -20V, VGS= 0V,<br>f = 1MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|88.1<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|40.2<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Gate resistance<br>~~——~~|Rg|—|12.3|—<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~eee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~——~~|Qg|—|5.4|—<br>~~ee~~|nC<br>~~ee~~|VDS= -20V, ID= -4.2A<br>~~eee~~|
|Total Gate Charge(VGS= -10V)<br>~~DO~~<br>~~——~~|Qg<br>~~DO~~|—<br>~~DO~~|11.1<br>~~DO~~|—<br>~~DO~~<br>~~ee~~|nC<br>~~DO~~<br>~~ee~~||
|Gate-Source Charge<br>~~——~~|Qgs|—|1.5|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~——~~|Qgd|—|2|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On Delay Time<br>~~——~~|tD(on)|—|3.6|—<br>~~ee~~|ns<br>~~ee~~|VDD= -15V, VGS= -10V,<br>RG= 6Ω, ID= -1A<br>~~eee~~|
|Turn-On Rise Time<br>~~——~~<br>~~pt~~|tr|—|2.9|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time|tD(off)|—|36.3<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off Fall Time|tf|—|15.3<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~||
|Reverse Recovery Time<br>~~ee~~|trr<br>~~ee~~|—<br>~~ee~~|15.5<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~|IF= -4.2A, di/dt = 500A/μs<br>~~ee~~|
|Reverse Recovery Charge<br>~~ee~~|Qrr<br>~~ee~~|—<br>~~ee~~|16.9<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||



3 of 9 **www.diodes.com** 

DMHC4035LSD Document number: DS36287  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**DMHC4035LSD** 

## **Typical Characteristics - N-CHANNEL** 

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20 20<br>VGS = 10V VGS = 3.5V VDS = 5.0V<br>18 a 18 TLL<br>VGS = 5.0V<br>16 16<br>14 foo VGS = 4.5V 14<br>12 12<br>VGS = 4.0V<br>10 V GS = 3.0V 10<br>feo<br>8 8<br>6 j/;  o— — — 6 J/<br>TA = 150°C TA = 85°C<br>4 4<br>2 Aaa V GS = 2.3V VGS = 2.5V 2 Seen TA = 125°C T 2 A = 25°C<br>ae aE TA = -55°C<br>0 ——— 0 oa” 2nn<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1  Typical Output Characteristics Figure 2  Typical Transfer Characteristics<br>0.05 0.2<br>0.045 coe 0.18 I D = 3.9A<br>0.16<br>0.04<br>VGS = 4.5V 0.14<br>0.035 Saanieee ee Cee ID = 3.5A<br>0.12<br>0.03 ee VGS = 10V 0.1 SPSS EE<br>TTT CT<br>0.025 0.08<br>MEARE<br>0.06<br>0.02<br>0.04<br>0.015 Saaeeeeeee ACE<br>0.02<br>0.01 0 EET 2 4 6 TT 8 10 12 EEE 14 16 TT 18 20 0 0 CORSETTT 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3  Typical On-Resistance vs.  Figure 4  Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.08 1.8<br>0.07 | VGS = 4.5V tte TA = 150°C 1.6 VIGS D =  10= 10AV /<br>0.06 T A  = 125°C<br>mae TA = 85°C 1.4<br>0.05 VGS = 5V<br>ae ee 7, ID = 5A<br>0.04 TA = 25 ° C 1.2<br>Te tity<br>0.03<br>TEEETTT YT TA = -55°C | | 1 | |Pry| fy<br>0.02<br>0.8<br>0.01<br>SEER a<br>0 CECE Ee 0.6 ZennEeee<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5  Typical On-Resistance vs.  Figure 6  On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I  I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMHC4035LSD Document number: DS36287  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**www.diodes.com** 

**DMHC4035LSD** 

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0.08 2.5<br>0.07<br>0.06 TTT TTT 2 TTTTTTT<br>PTT TTT VGS = 5V _<br>0.05 I D = 5A ID = 1mA<br>0.04 SeEEEge 1.5 SS ID = 250µA<br>Sanne one —<br>0.03 VI GS D = 10A  10= V<br>0.02 peeery tH 1 UUTITR SS<br>0.01<br>0 P PPPPrrr 0.5 TTT TT Ty<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7  On-Resistance Variation with Temperature Figure 8  Gate Threshold Variation vs. Ambient Temperature<br>20 1000<br>18 C iss<br>16<br>14<br>12<br>es | NaS<br>10 TA = 150 ° C 100<br>Coss<br>8 fflTL TA = 25 ° C NSSSS<br>TA = 125°C<br>6 HY Ss C rss<br>4 T A = 85°C SW/T T A = -55°C i<br>2 fp<br>0 i) 10 emt<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 | 20 | 25 yy 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9  Diode Forward Voltage vs. Current Figure 10  Typical Junction Capacitance<br>10 100<br>VDS = 20V<br>ID  3.9= A<br>8<br>10<br>6<br>DC<br>1 P W  = 10s<br>P W  = 1s<br>4 P W  = 100ms<br>P W = 10ms<br>0.1 T = 150°C P W = 1ms<br>2 TJ(max)A = 25°C PW = 100µs<br>V GS  = 4.5V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01<br>00 2 4 6 8 10 12 14 0.1 1 HTTP 10 FELT 100<br>Qg [, TOTAL GATE CHARGE ] (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12  SOA, Safe Operation Area<br>Figure 11  Gate Charge<br>)Ω<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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DMHC4035LSD Document number: DS36287  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**www.diodes.com** 

**DMHC4035LSD** 

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Typical Characteristics - P-CHANNEL<br>15 15<br>VGS = -10V VDS = -5.0V<br>VGS = -3.5V<br>12 fp VGS = -5.0V 12 eeeie<br>9 9<br>poo VGS = -3.0V<br>6 | — 6 fe<br>3 VGS = -2.5V 3 TA = 150°C T A  = 85°C<br>TA = 125°C TA = 25°C<br>VGS = -2.0V TA = -55°C<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13  Typical Output Characteristics Figure 14  Typical Transfer Characteristics<br>0.2 0.5<br>ID = -4.2A<br>0.18 TELE 0.45 Te LTT<br>0.16 0.4<br>0.14 0.35<br>0.120.1 PEEP)CECECOP V GS  = -4.5V rer yy |  ES 0.250.3 CCEEE ee E<br>ID = -3.3A<br>oe err TEE<br>0.08 0.2<br>ot ee fh FPP<br>0.06 V GS  = -10V 0.15<br>0.04 0.1<br>ree CECESEEEee<br>0.02 0.05<br>EEE PEEP ELT<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15  Typical On-Resistance vs.  Figure 16  Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.2 1.8<br>VGS = -4.5V<br>0.18 VGS = -10V<br>1.6 ID = -10A<br>0.16 TA = 150°C<br>0.14<br>e e e e HAY—-enene 4<br>1.4<br>0.12 TA = 125°C<br>TA = 85°C VGS = -5V<br>0.1 oe T A  = 25°C 1.2 4 I D  = -5A<br>0.08<br>0.06 Seroo TA = -55 ° C 1 Baaa<br>0.04<br>0.8<br>0.02 ———— EPaaaaee<br>0 ee 0.6 Annee<br>0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 17  Typical On-Resistance vs.  Figure 18  On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I -I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMHC4035LSD Document number: DS36287  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**www.diodes.com** 

**DMHC4035LSD** 

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0.15<br>0.12<br>VGS = -5V<br>PppT ID  -5= A<br>0.09<br>aan<br>VGS = -10V<br>0.06 I D   -10= A<br>vee<br>0.03<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)<br>Figure 19  On-Resistance Variation with Temperature<br>15 Sy|<br>12<br>|<br>9<br>TA= 85°C<br>6 TA= 125°C If TA= 25°C<br>TA= 150°C HH<br>3 TA= -55°C<br>0 LY)<br>0 0.3 0.6 0.9 1.2 1.5<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 21  Diode Forward Voltage vs. Current<br>10<br>8<br>6<br>VDS = -20V<br>ID = -4.2A<br>4<br>2<br>0<br>0 2 4 6 8 10 12<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 23  Gate-Charge Characteristics<br>)Ω<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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2<br>1.8<br>1.6<br>mt | | -ID = 250µA<br>1.4<br>-ID = 1mA<br>1.2<br>1<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Figure 20  Gate Threshold Variation vs. Ambient Temperature<br>1000<br>C iss<br>e eesea aes|ss<br>Af | [| f [| ff<br>100 WrNSS| Coss i<br>C rss<br>=<br>10 oomLE LE<br>0 5 10 15 20 25 30 35 40<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 22  Typical Junction Capacitance<br>100<br>mi FH<br>aee<br>10 Nd|<br>DC<br>1 PW = 10s<br>PW = 1s<br>PW = 100ms<br>P W = 10ms<br>0.1 TJ(max) = 150°C PW = 1ms<br>TA = 25°C PW = 100µs<br>VSingle PulseGS = -4.5V aa<br>DUT on 1 * MRP Board<br>0.01 all<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 24  SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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DMHC4035LSD Document number: DS36287  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**DMHC4035LSD** 

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1 D = 0.9<br>eee D = 0.7<br>be D = 0.5<br>FH D = 0.3 TTTHM cee eermeHTT THT<br>0.1 DD emer IM LIM TTI EI<br>Fe D = 0.1 oe<br>D = 0.05<br>PC eee<br>a ae a |<br>Lp er TI E e<br>0.01 20LL D = 0.02<br>D = 0.01<br>eS a 0 OG |<br>= Mi<br>LTE D = 0.005D = Single Pulse AU | Pr R R θθJAJA(t)  = 110 = r(t)  °C/W * RθJA 1ni<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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|_| | | |_| ;<br>SO-8<br>Dim  Min  Max<br>E1 E A  -  1.75<br>Gauge Plane A1  0.10  0.20<br>A1 i L ry Seating Plane A2  1.30  1.50<br>_ A3  0.15  0.25<br>Too Detail ‘A’ b  0.3  0.5<br>i | LJ LJ | | ' D  4.85  4.95<br>h 7°~9° E  5.90  6.10<br>= 45° E1  3.85  3.95<br>=OC~«*Ya mz a, z= A2 oi A A3 (ooo Detail ‘A’ h e  - 1.27 Typ0.35<br>UPEE e b , , [ \— IS ) 0 L  θ 0.62 0° 0.82 8°<br>D<br>All Dimensions in mm<br>0.254<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

|X<br>"~~7~~|X<br>"~~7~~|X<br>"~~7~~|X<br>"~~7~~|X<br>"~~7~~|~~a~~|~~a~~|~~a~~|~~a~~|~~HE~~|~~HE~~|~~HE~~|~~HE~~|~~HE~~|~~HE~~|~~HE~~||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||**Dimensions**||**Value (in mm)**|
|||||||||||||||||||**X**||0.60|
|||||||||||||||||C1||**Y**||1.55|
|||||||||||||||||||**C1 **||5.4|
||||||C2|||||||||||||**C2**||1.27|
||||||||||||||||||||||
|Y|||||||||||||||||||||



8 of 9 **www.diodes.com** 

DMHC4035LSD Document number: DS36287  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**DMHC4035LSD IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** [| Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated **www.diodes.com**[a] DMHC4035LSD 9 of 9 January 2014 Document number: DS36287  Rev. 1 - 2 **www.diodes.com** © Diodes Incorporated
Updated at June 9, 2026
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