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DMHC3025LSD-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6 A, 6 A, 0.019 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N and P Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Vol
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.5W
- Power Dissipation P Channel: 1.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 6A
- Continuous Drain Current Id P Channel: 6A
- Drain Source On State Resistance N Channel: 0.019ohm
- Drain Source On State Resistance P Channel: 0.019ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.339 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE** ## **Product Summary** ## **Features** - 2 x N + 2 x P Channels in A SO-8 Package |**Device**|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**| |---|---|---|---| |N-Channel|30V|25mΩ@VGS= 10V|6.0A| |||40mΩ@VGS= 4.5V|4.6A| |P-Channel|-30V|50mΩ@VGS= -10V|-4.2A| |||80mΩ@VGS= -4.5V|-3.2A| ## **Description** This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** - **An Automotive-Compliant Part is Available Under Separate Datasheet (DMHC3025LSDQ)** ## **Mechanical Data** - Case: SO-8 ## **Applications** - DC Motor Control - DC-AC Inverters - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See Diagram - Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.008 grams (Approximate) **==> picture [325 x 149] intentionally omitted <==** **----- Start of picture text -----**<br> P1S/P2S<br>P1G<br>SO-8<br>| H-Bridge -<br>LIU UU<br>NIG<br>S<br>N1S/N2S<br>Top View Top View<br>Pin Configuration Internal Schematic<br>P1G P1S/P2S N2D/P2D P2G<br>N1G N1D/P1D N1S/N2S N2G<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMHC3025LSD-13|SO-8|2500/Tape & Reel| Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. ## **Marking Information** **==> picture [75 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> 8 5<br>7)!vt'<br>C3025LS<br>YY WW<br>1 4<br>**----- End of picture text -----**<br> Dhi = Manufacturer’s Marking C3025LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53) 1 of 9 **www.diodes.com** DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated **DMHC3025LSD** ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Total Power Dissipation(Note 5)||PD|1.5|W| |Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|83|°C/W| ||t < 10s||50|| |Thermal Resistance,Junction to Case||RθJC|14.5|| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C| ## **Maximum Ratings N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNELgs N-CHANNELs N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 5) VGS= 10V|Steady<br>State|TA= +25C<br>TA= +70C|ID|6.0<br>4.8|A| ||t < 10s|TA= +25C<br>TA= +70C|ID|7.8<br>6.1|A| |Continuous Drain Current (Note 5) VGS= 4.5V|Steady<br>State|TA= +25C<br>TA= +70C|ID|4.6<br>3.6|A| ||t < 10s|TA= +25C<br>TA= +70C|ID|6.1<br>4.8|A| |Maximum Continuous BodyDiode Forward Current(Note 5)|||IS|2.5|A| |Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|60|A| **Maximum Ratings P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNELgs P-CHANNELs P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 5) VGS= -10V|Steady<br>State|TA= +25C<br>TA= +70C|ID|-4.2<br>-3.3|A| ||t < 10s|TA= +25C<br>TA= +70C|ID|-5.4<br>-4.3|A| |Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25C<br>TA= +70C|ID|-3.2<br>-2.5|A| ||t < 10s|TA= +25C<br>TA= +70C|ID|-4.3<br>-3.3|A| |Maximum Continuous BodyDiode Forward Current(Note 5)|||IS|-2.5|A| |Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|-30|A| Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 **www.diodes.com** DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated **DMHC3025LSD** **Electrical Characteristics N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |||||||| |---|---|---|---|---|---|---| |**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~| |**OFF CHARACTERISTICS(Note 6) **<br>~~ee~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250μA<br>~~ee~~| |Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|0.5<br>~~ee~~|μA<br>~~ee~~|VDS= 30V,VGS= 0V<br>~~ee~~| |Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±1<br>~~ee~~|μA<br>~~ee~~|VGS= ±20V,VDS= 0V<br>~~ee~~| |**ON CHARACTERISTICS(Note 6) **<br>~~ee~~||||||| |Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1<br>~~ee~~|—<br>~~ee~~|2<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~| |Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|19<br>~~ee~~|25<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 5A<br>~~ee~~| |||—<br>~~ee~~|26<br>~~ee~~|40<br>~~ee~~||VGS= 4.5V,ID= 4A<br>~~ee~~| |Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~|—<br>~~ee~~<br>~~ef~~|4<br>~~ee~~<br>~~ef~~|—<br>~~ee~~<br>~~ef~~|S<br>~~ee~~<br>~~ef~~|VDS= 5V,ID= 5A<br>~~ee~~| |Diode Forward Voltage<br>~~Cf~~|VSD<br>~~Cf~~|—<br>~~Cf~~<br>~~ef~~|0.70<br>~~Cf~~<br>~~ef~~|1.2<br>~~Cf~~<br>~~ef~~|V<br>~~Cf~~<br>~~ef~~|VGS= 0V,IS= 1.7A<br>~~Cf~~| |**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~ef~~<br>~~eees ee~~<br>~~i~~||||||| |Input Capacitance<br>~~es~~<br>~~i~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|590<br>~~es~~<br>~~es ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~|VDS= 15V, VGS= 0V,<br>f = 1MHz<br>~~es~~| |Output Capacitance<br>~~es~~<br>~~i~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|122<br>~~es~~<br>~~es ee~~|—<br>~~es~~<br>~~ee~~||| |Reverse Transfer Capacitance<br>~~es~~<br>~~i~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|58<br>~~es~~<br>~~es ee~~|—<br>~~es~~<br>~~ee~~||| |Gate Resistance<br>~~i~~|Rg<br>~~ee~~|—<br>~~ee~~|1.5<br>~~es ee~~|—<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz| |Total Gate Charge(VGS= 4.5V)<br>~~i~~|Qg<br>~~ee~~|—<br>~~ee ~~|5.4<br> ~~es ee~~|—<br>~~ee~~|nC<br>~~ee~~|VDS= 15V, ID= 7.8A| |Total Gate Charge(VGS= 10V)|Qg|—|11.7|—||| |Gate-Source Charge|Qgs|—|1.8|—||| |Gate-Drain Charge|Qgd|—|2.1|—||| |Turn-On DelayTime|tD(ON)|—|11.2|—|ns<br>~~ee~~|VDD= 15V, VGS= 4.5V,<br>RL= 2.4Ω, RG= 1Ω| |Turn-On Rise Time<br>~~Ce~~|tR|—|15|—||| |Turn-Off DelayTime|tD(OFF)|—|17.5<br>~~ee~~|—<br>~~ee~~||| |Turn-Off Fall Time|tF|—|8.7<br>~~ee~~|—<br>~~ee~~||| |Reverse RecoveryTime<br>~~ss~~|tRR<br>~~ss~~|—<br>~~ss~~|18.3<br>~~ss~~<br>~~ee~~|—<br>~~ss~~<br>~~ee~~|ns<br>~~ss~~<br>~~ee~~|IF= 12A, di/dt = 500A/μs<br>~~ss~~| |Reverse RecoveryCharge<br>~~ss~~|QRR<br>~~ss~~|—<br>~~ss~~|12<br>~~ss~~<br>~~ee~~|—<br>~~ss~~<br>~~ee~~|nC<br>~~ss~~<br>~~ee~~|| ## **Electrical Characteristics P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-CHANNEL P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 6) **<br>~~———~~||||||| |Drain-Source Breakdown Voltage<br>~~———~~|BVDSS|-30|—|—|V|VGS= 0V,ID= -250μA| |Zero Gate Voltage Drain Current<br>~~———~~|IDSS|—|—|-0.5|μA|VDS= -30V,VGS= 0V| |Gate-Source Leakage<br>~~———~~|IGSS|—|—|±1|μA|VGS= ±20V,VDS= 0V| |**ON CHARACTERISTICS(Note 6) **<br>~~———~~<br>~~a~~<br>~~——————————~~||||||| |Gate Threshold Voltage<br>~~a~~|VGS(TH)|-1<br>~~——————————~~|—<br>~~——————————~~|-2<br>~~——————————~~|V<br>~~——————————~~|VDS= VGS,ID= -250μA<br>~~——————————~~| |Static Drain-Source On-Resistance<br>~~a~~<br>~~——~~|RDS(ON)|—<br>~~——————————~~<br>~~ee~~|43<br>~~——————————~~<br>~~ee~~|50<br>~~——————————~~<br>~~ee~~|mΩ<br>~~——————————~~<br>~~ee~~<br>~~Pp~~|VGS= -10V,ID= -5A<br>~~——————————~~<br>~~Pp~~| |||—<br>~~——————————~~<br>~~ee~~|68<br>~~——————————~~<br>~~ee~~|80<br>~~——————————~~<br>~~ee~~||VGS= -4.5V,ID= -4A<br>~~——————————~~<br>~~Pp~~| |Forward Transfer Admittance<br>~~a~~<br>~~——~~||Yfs||—<br>~~——————————~~<br>~~ee~~|3.5<br>~~——————————~~<br>~~ee~~|—<br>~~——————————~~<br>~~ee~~|S<br>~~——————————~~<br>~~ee~~<br>~~Pp~~|VDS= -5V,ID= -5A<br>~~——————————~~<br>~~Pp~~| |Diode Forward Voltage<br>~~——~~|VSD|—<br>~~ee~~|-0.7<br>~~ee~~|-1.2<br>~~ee~~|V<br>~~ee~~<br>~~Pp~~|VGS= 0V,IS= -1.7A<br>~~Pp~~| |**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~ee ee ee~~<br>~~Pp~~<br>~~——~~<br>~~es~~<br>~~ee~~||||||| |Input Capacitance<br>~~es~~|Ciss<br>~~es~~|—|631|—|pF<br>~~ee~~|VDS= -15V, VGS= 0V,<br>f = 1MHz<br>~~ee~~| |Output Capacitance<br>~~es~~<br>~~———~~|Coss<br>~~es~~|—|137|—|pF<br>~~ee~~|| |Reverse Transfer Capacitance<br>~~es~~<br>~~———~~|Crss<br>~~es~~|—|70|—|pF<br>~~ee~~|| |Gate Resistance<br>~~es~~<br>~~———~~<br>~~——~~|Rg<br>~~es~~|—|10.8|—<br>~~ee~~|Ω<br>~~ee~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~<br>~~eee~~| |Total Gate Charge(VGS= -4.5V)<br>~~———~~<br>~~——~~|Qg|—|5.5|—<br>~~ee~~|nC<br>~~ee~~|VDS= -15V, ID= -6A<br>~~eee~~| |Total Gate Charge(VGS= -10V)<br>~~———~~<br>~~I~~<br>~~——~~|Qg<br>~~I~~|—<br>~~I~~|11.4<br>~~I~~|—<br>~~I~~<br>~~ee~~|nC<br>~~I~~<br>~~ee~~|| |Gate-Source Charge<br>~~——~~|Qgs|—|1.8|—<br>~~ee~~|nC<br>~~ee~~|| |Gate-Drain Charge<br>~~——~~|Qgd|—|2.4|—<br>~~ee~~|nC<br>~~ee~~|| |Turn-On DelayTime<br>~~——~~|tD(ON)|—|7.5|—<br>~~ee~~|ns<br>~~ee~~|VDD= -15V, VGS= -10V,<br>RG= 6Ω, ID= -1A<br>~~eee~~| |Turn-On Rise Time<br>~~——~~<br>~~Cn~~|tR|—|4.9|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off DelayTime|tD(OFF)|—|28.2|—|ns|| |Turn-Off Fall Time|tF|—|13.5|—|ns|| |Reverse RecoveryTime<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|15.1<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~|IF= -12A, di/dt = 500A/μs<br>~~ee~~| |Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|15.3<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|| Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 3 of 9 **www.diodes.com** DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated **DMHC3025LSD** **Typical Characteristics - N-CHANNEL** **==> picture [489 x 662] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 20<br>VGS = 4.5V 18 V = 5.0VDS<br>25.0 VGS=5.0V 16<br>Se ) e 14 co<br>20.0 VGS = 4.0V<br>VGS = 10.0V N [T(A] 12<br>15.0 ro 10 ee oo<br>C [URRE]<br>a i VGS = 3.5V a a<br>I [N] 8 T = 150°CA<br>10.0 |an n VGS = 3.0V D [RA] 6 T = 125°CA<br>, D<br>I 4 T = 85°CA<br>5.0<br>Y o VGS = 2.5V fe T = 25°CA<br>2<br>p o T = -55°CA<br>0.0 0<br>0 1 2 3 4 5<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE(V) V , GATE-SOURCE VOLTAGE (V)GS<br>Figure 2 Typical Transfer Characteristics<br>Figure 1. Typical Output Characteristic<br>0.050.04 TT) 0.150.12 Ie<br>0.03 0.09<br>Ee VGS = 4.5V<br>0.02 0.06<br>eo) VGS = 10V ETT ID = 5.0A<br>0.01 0.03<br>ID = 4.0A<br>THT = NEE<br>0 0<br>0 PLE) 2 4 6 8 10 12 14 16 18 20 Ss 0 Ls 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.08 1.8<br>)<br>[(] CE V = 4.5VGS<br>1.6<br>0.06 VGS 10= V<br>ID = 10A<br>[SISTAN] E LEE 1.4 ER<br>- [R] T = 150°CA<br>[N] O<br>CE 0.04 T = 125°CA 1.2 V GS = 4.5V<br>R aes T = 85°CA ID = 5A<br>- [SOU] See T = 25°CA 1.0 ral<br>[IN] A<br>R 0.02<br>D T = -55°CA<br>, 0.8<br>( [ON)]<br>D [S]<br>R 0 0.6<br>0 ELLE) 2 4 6 8 10 12 14 16 18 20 | | Moree -50 -25 0 25 50 75 100 125 150<br>I , DRAIN CURRENT (A)D TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A) ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 4 of 9 **www.diodes.com** DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated **DMHC3025LSD** **==> picture [491 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> 0.06 3.0<br>0.05 TOOL )=— 2.5 ooo<br>0.04 V GS = 4.5V 2.0<br>ID = 5A<br>I = 1mAD<br>oo Eee<br>0.03 1.5<br>coer} = BREET I = 250µAD<br>0.02 V GS 10= V 1.0<br>ID = 10A<br>0.01 0.5<br>0 POCA 0 ECE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) T , AMBIENT TEMPERATURE (C) A <br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>20 1,000<br>VGS = 0V<br>C iss<br>) 15<br>N [T(A]<br>C [URRE] 10 T = 150°CA 100 Coss<br>T = 125°CA<br>O [URCE] S Crss<br>S 5 fe T = 85°CA Re<br>I [,]<br>T = 25°CA<br>T = -55°CA f = 1MHz<br>0 ay 10 EA<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>V , SOURCE-DRAIN VOLTAGE (V)SD VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10<br>8 VID DS 7.8= = 15VA<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 11 Gate Charge<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>GATE-SOURCE VOLTAGE (V)<br>GS,<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated **DMHC3025LSD** ## **Typical Characteristics - P-CHANNEL** **==> picture [480 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 20 20<br>VGS = -10V<br>VGS = -5.0V 18 V DS = -5.0V<br>VGS = -4.5V<br>16<br>[iA ——<br>15<br>14<br>VGS = -4.0V 12<br>10 le 10 —_}+—-}}—<br>yo VGS = -3.5V 8<br>6<br>5<br>po VGS = -2.2V VVGSGS = -2.5V= -3.0V 42 TA = 125 TA = 150 C C T A = 25 TA = 85 C C<br>0 0 TA = -55C<br>0 1 2 3 4 5 0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 12 Typical Output Characteristics Figure 13 Typical Transfer Characteristics<br>0.18 0.15<br>0.16<br>Seppe 0.12 CLE ID = -5.0A LEE<br>0.14<br>0.12<br>FEEEECCAL 0.09 I D = -4.0A neeneee<br>0.10 Pi Ty | |<br>0.08<br>VGS = -4.5V 0.06<br>Pe er WEEE<br>0.06<br>0.04 FER VGS = -10V 0.03 FSET<br>0.02 SERRE LE eee<br>0 PEELE EEL LL 0 EEEL ELLE<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 14 Typical On-Resistance vs. Figure 15 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.3 1.6<br>VGS = -10V<br>ID = -10A<br>VGS = -4.5V 1.4<br>0.2 Tg oo<br>1.2 V GS = -4.5V<br>ID = -5A<br>TA = 150C<br>TA = 125C ff 1.0 yt<br>0.1 ne Zane<br>TA = 85C<br>TA = 25C 0.8<br>TA = -55C<br>0 ——— 0.6 PZdnnnae<br>0 POEL 2 4 6 8 10 12 14 16 18 20 -50 PEL -25 0 25 ELLE 50 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 16 Typical On-Resistance vs. Figure 17 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br> 6 of 9 DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated **www.diodes.com** **DMHC3025LSD** **==> picture [493 x 649] intentionally omitted <==** **----- Start of picture text -----**<br> 0.10 3.0<br>0.09 Pt | tt | | ee [V)]<br>2.5<br>0.08 [GE(] A<br>0.07 V ID GS -5= -4.= A 5V [OLT] V 2.0<br>0.06 see>oaes NAARUEERE<br>[LD] O -I = 250µAD<br>0.05 Se CEE 1.5 SS<br>[SH] E<br>0.04 V I DGS -10= = -10V A RHT -I =1mAD<br>E 1.0<br>0.03<br>[AT] G<br>0.02 , )<br>eee GS<br>0.5<br>( [TH]<br>G [S]<br>0.01 V<br>0 oe 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) T , AMBIENT TEMPERATURE (°C)A<br>Figure 18 On-Resistance Variation with Temperature Figure 19 Gate Threshold Variation vs. Ambient Temperature<br>20 1,000<br>VGS = 0V Ciss<br>15 Th ==<br>10 100 Coss<br>ff SS<br>TA= 150C Crss<br>5 T A = 125C<br>TA= 85C<br>TA= 25C f = 1MHz<br>0 DF TA= -55C 10<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 20 Diode Forward Voltage vs. Current Figure 21 Typical Junction Capacitance<br>10<br>8<br>6 VIDDS= -6A= -15V<br>4<br>2<br>0<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 22 Gate-Charge Characteristics<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated **DMHC3025LSD** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [506 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>SO-8<br>E ee Dim Min Max Typ<br>A 1.40 1.50 1.45<br>A1 0.10 0.20 0.15<br>1<br>b 0.30 0.50 0.40<br>c 0.15 0.25 0.20<br>D 4.85 4.95 4.90<br>E 5.90 6.10 6.00<br>b<br>E1 E1 3.80 3.90 3.85<br>h E0 3.85 3.95 3.90<br>Q e -- -- 1.27<br>7° h - -- 0.35<br>c L 0.62 0.82 0.72<br>A 4°± 3° Q 0.60 0.70 0.65<br>All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **SO-8** **==> picture [371 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> X1<br>Dimensions Value (in mm)<br>C 1.27<br>Y1 X 0.802<br>X1 4.612<br>Y 1.505<br>OE Y1 6.50<br>Y<br>OO C X<br>**----- End of picture text -----**<br> 8 of 9 **www.diodes.com** DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated **DMHC3025LSD** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. - B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMHC3025LSD Document number: DS35821 Rev. 5 - 2 January 2018 © Diodes Incorporated
Updated at June 9, 2026
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