DMG9933USD-13

**DMG9933USD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** 

- **DMG9933USD** 

- **DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** 

- **Product Summary Features V(BR)DSS RDS(on) max TAI = +25°C D max**  Low On-Resistance Low Input Capacitance 75mΩ @ VGS = -4.5V -4.6A  Fast Switching Speed 

- -20V 110mΩ @ VGS = -2.5V -2.9A  Low Input/Output Leakage  **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**  **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Description**  **Qualified to AEC-Q101 standards for High Reliability** This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for **Mechanical Data** high efficiency power management applications.  Case: SO-8 

- **Applications**  UL Flammability Classification Rating 94V-0 Case Material: Molded Plastic, “Green” Molding Compound.  Backlighting  Moisture Sensitivity: Level 1 per J-STD-020  Power Management Functions  Terminal Connections: See Diagram Below  DC-DC Converters  Marking Information: See Page 4  Ordering Information: See Page 4  Weight: 0.072 grams (approximate) 

- ~~E &~~ . ~~7~~ SO-8 D1 D2 

- S1 D1 G1 D1 S2 D2 G1 G2 G2 D2 

- ~~ee~~ Top View Top View S1 S2 Internal Schematic P-Channel MOSFET P-Channel MOSFET 

- **Ordering Information** (Note 4) **Part Number Case Packaging** 

- DMG9933USD-13 SO-8 2,500 / Tape & Reel 

   - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

      2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

      3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

      4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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8 5 8 5<br>G9933UD G9933UD<br>YY WW YY WW<br>1 4 1 4<br>Too Sooo”<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking G9933UD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) : WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 

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DMG9933USD Document number: DS32085 Rev. 3 - 2 

July 2014 © Diodes Incorporated 

**DMG9933USD** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA = +25°C<br>TA = +85°C|ID|-4.6<br>-3|A|
|Pulsed Drain Current(Note 6)|||IDM|-20|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|1.15|W|
|Thermal Resistance,Junction to Ambient@TA = +25°C|RθJA|109|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|-1|μA|VDS= -16V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±12V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~OO~~|||||||
|Gate Threshold Voltage<br>~~OO~~|VGS(th)|-0.45|—|-1.1|V|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~OO~~|RDS (ON)|—<br>—|55<br>76|75<br>110|mΩ|VGS= -4.5V,ID= -4.8A|
|||||||VGS= -2.5V,ID= -1A|
|Forward Transfer Admittance<br>~~OO~~||Yfs||—|10|—|S|VDS= -9V,ID= -3.4A|
|Diode Forward Voltage<br>~~OO~~|VSD|—|-0.8|-1.2|V|VGS= 0V,IS= -2A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~——~~<br>~~ee~~|||||||
|Input Capacitance<br>~~——~~|Ciss|—|608.4|—<br>~~e~~|pF<br>~~e~~|VDS= -6V, VGS= 0V<br>f = 1MHz<br>~~ee~~|
|Output Capacitance<br>~~——~~|Coss|—|81.5|—<br>~~e~~|pF<br>~~e~~||
|Reverse Transfer Capacitance<br>~~——~~|Crss|—|72.4|—<br>~~e~~|pF<br>~~e~~||
|Gate Resistance<br>~~——~~|Rg|—|44.91|—<br>~~e~~|Ω<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge<br>~~——~~|Qg|—|6.5|—<br>~~e~~|nC<br>~~e~~|VDS= -10V, VGS= -4.5V,<br>ID= -3.2A<br>~~ee~~|
|Gate-Source Charge|Qgs|—|0.9|—|nC||
|Gate-Drain Charge|Qgd|—|1.5|—|nC||
|Turn-On DelayTime|tD(on)|—|12.45|—|ns|VDS= -10V, VGS= -4.5V,<br>RL= 10Ω, RG= 1Ω, ID= -1A|
|Turn-On Rise Time|tr|—|10.29|—|ns||
|Turn-Off DelayTime|tD(off)|—|46.52|—|ns||
|Turn-Off Fall Time|tf|—|22.19|—|ns||



Notes: 7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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DMG9933USD Document number: DS32085 Rev. 3 - 2 

July 2014 © Diodes Incorporated 

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DMG9933USD<br>10 VGS = -8.0V VGSVGS = -3.0V = -4.5V 10<br>VGS = -2.5V<br>8 8 VDS = -5V<br>VGS = -2.0V<br>6 6<br>4 4<br>2 V GS = -1.5V 2 T A  = 125°C TA = 150°C<br>TA = 85°C TA = 25°C<br>0 VGS = -1.2V 0 TA = -55°C<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.25 0.16<br>V GS = 4.5V<br>0.20<br>0.12<br>0.15 TA = 150°C<br>0.08 TA = 125°C<br>0.10 -V GS = 1.8V TA = 85°C<br>TA = 25°C<br>0.05 -V-VGSGS= 2.5V= 4.5V 0.04 TA = -55°C<br>0 0<br>0.1 1 10 0 2 4 6 8 10<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance  Fig. 4 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.16<br>1.5<br>0.12<br>1.3<br>-VGS = 2.5V<br>1.1 0.08 -I D  = 5.5A<br>-VGS = 5.0V<br>-ID = 10A<br>0.9<br>-VGS = 5.0V<br>0.04 -I D  = 10A<br>0.7 -V GS  = 2.5V<br>E -ID = 5.0A :<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>DMG9933USD 3 of 6<br>Document number: DS32085 Rev. 3 - 2 www.diodes.com   © Diodes Incorporated<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) D<br>D -I<br>-I<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


July 2014 © Diodes Incorporated 

**DMG9933USD** 

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1.6 10<br>8<br>1.2<br>6 T A  = 25°C<br>0.8 -I D  = 1mA<br>4<br>-ID = 250µA<br>0.4<br>2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,000 10,000<br>ee C iss f = 1MHz a TA = 150 ° C<br>1,000<br>TA = 125°C<br>100 C oss 100<br>C rss T A  = 85°C<br>Sse --==—<br>10<br>T A  = 25°C<br>10 1<br>0 4 8 12 16 20 0 4 8 12 16 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>V<br>C, CAPACITANCE (pF)<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>**----- End of picture text -----**<br>


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1<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.9<br>D = 0.05<br>RJA(t) = r(t) * RJA<br>D = 0.02 RJA = 156°C/W<br>0.01<br>D = 0.01 P(pk)<br>t1<br>D = 0.005 t 2<br>TJ - TA = P * RJA(t)<br>D = Single Pulse Duty Cycle, D = t 1 /t 2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMG9933USD Document number: DS32085 Rev. 3 - 2 

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**DMG9933USD** 

## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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SO-8<br>Dim  Min  Max<br>A  -  1.75<br>E1 E<br>Gauge Plane A1  0.10  0.20<br>A1 Seating Plane A2  1.30  1.50<br>L<br>A3  0.15  0.25<br>Detail ‘A’ b  0.3  0.5<br>D  4.85  4.95<br>h 7°~9° E  5.90  6.10<br>45° E1  3.85  3.95<br>Detail ‘A’ e  1.27 Typ<br>A2 A A3 h  -  0.35<br>L  0.62  0.82<br>e b  0 8<br>D All Dimensions in mm<br>0.254<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

|X<br>C1<br>C2<br>Y<br>~~Weaga~~<br>t~~fOGG~~|**Dimensions**<br>**X**<br>**Y**<br>**C1 **<br>**C2**||**Value (in mm)**<br>0.60<br>1.55<br>5.4<br>1.27|
|---|---|---|---|



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DMG9933USD Document number: DS32085 Rev. 3 - 2 

July 2014 © Diodes Incorporated 

**DMG9933USD IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: i; a A.   Life support devices or systems are devices or systems which: 1.  are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

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Copyright © 2014, Diodes Incorporated 

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DMG9933USD Document number: DS32085 Rev. 3 - 2 

July 2014 © Diodes Incorporated