DMG6968UDM-7

**DMG6968UDM** 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

| 

## **Features** 

## **Mechanical Data** 

- Low Gate Charge 

- Low RDS(ON): 

   - 24mΩ @ VGS = 4.5V 

   - 28mΩ  @ VGS = 2.5V 

   - 34mΩ  @ VGS = 1.8V 

- Low Input/Output Leakage 

- **ESD Protected up to 2kV HBM** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Case: SOT26 

   - Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 **e3** 

   - Terminal Connections: See Diagram 

   - Weight: 0.0008 grams (approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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SOT26 D D<br>S1 G1<br>D /1 [D] 2 D /1 [D] 2 G1 G2<br>S2 G2<br>a W oe S1 S2<br>ESD PROTECTED TO 2kV<br>Top View  N-Channel N-Channel<br>Top View<br>Pin Configuration Equivalent Circuit<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMG6968UDM-7  SOT26  3000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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2N4 = Product Type Marking Code<br>YM = Date Code Marking<br>2N4<br>Y = Year (ex: W = 2009)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2008 2009 2010 2011 2012 2013 2014 2015<br>_+} Code V  W  X  Y  Z  A  B  — C<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>tt Code 1  2  3  4  5  6  7  8  9  O  N  D<br>YM<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMG6968UDM Document number: DS31758 Rev. 5 - 2 

June 2014 © Diodes Incorporated 

**DMG6968UDM** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|20|V|
|Gate-Source Voltage (Note 5)|VGSS|±12|V|
|Drain Current (Note 6) Continuous<br>TA= +25°C<br>TA= +70°C|ID|6.5<br>5.2|A|
|Pulsed Drain Current (Note 7)|IDM|30|A|



|**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Total Power Dissipation (Note 6)<br>PD<br>0.85<br>W<br>Thermal Resistance, Junction to Ambient (Note 6) t ≤10s<br>RθJA<br>147<br>°C/W<br>Operating and Storage Temperature Range<br>TJ, TSTG<br>-55 to +150<br>°C<br>~~——~~<br>~~——~~|**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Total Power Dissipation (Note 6)<br>PD<br>0.85<br>W<br>Thermal Resistance, Junction to Ambient (Note 6) t ≤10s<br>RθJA<br>147<br>°C/W<br>Operating and Storage Temperature Range<br>TJ, TSTG<br>-55 to +150<br>°C<br>~~——~~<br>~~——~~|**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Total Power Dissipation (Note 6)<br>PD<br>0.85<br>W<br>Thermal Resistance, Junction to Ambient (Note 6) t ≤10s<br>RθJA<br>147<br>°C/W<br>Operating and Storage Temperature Range<br>TJ, TSTG<br>-55 to +150<br>°C<br>~~——~~<br>~~——~~|
|---|---|---|
||Notes:<br>5. AEC-Q101 VGS maximum is±9.6V.||
||6. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t≤10s.||
||7. Repetitive Rating, pulse width limited by junction temperature.||



|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|~~**O**O~~|||||||
|**Characteristic**<br>~~**O**O~~|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**STATIC CHARACTERISTICS**<br>~~**O**O~~|||||||
|Drain-Source Breakdown Voltage<br>~~**O**O~~|BVDSS|20<br>~~GO~~|⎯<br>~~GO~~|⎯|V|ID= 250µA, VGS= 0V|
|Zero Gate Voltage Drain Current<br>~~**O**O~~|IDSS|⎯<br>~~O~~<br>~~GO~~|⎯<br>~~O~~<br>~~GO~~|1<br>~~O~~|µA<br>~~O~~|VDS= 20V, VGS= 0V<br>~~O~~|
|Gate-BodyLeakage Current<br>~~**O**O~~|IGSS|⎯<br>~~O~~<br>~~GO~~|⎯<br>~~O~~<br>~~GO~~|±10<br>~~O~~|µA<br>~~O~~|VDS= 0V, VGS=±10V<br>~~O~~|
|Gate-Source Breakdown Voltage|BVSGS|±12|⎯|⎯|V|VDS= 0V, IG=±250µA|
|Gate Threshold Voltage|VGS(th)|0.5|⎯|0.9|V|VDS= VGS, ID= 250µA|
|Static Drain-Source On-Resistance (Note 8)<br>~~po~~|RDS (ON)<br>~~po~~|⎯<br>~~po~~|17<br>20<br>26<br>~~po~~|24<br>28<br>34<br>~~po~~|mΩ<br>~~po~~|VGS= 4.5V, ID= 6.5A<br>VGS= 2.5V, ID= 5.5A<br>VGS= 1.8V, ID= 3.5A<br>~~po~~|
|Forward Transfer Admittance||YFS||⎯|8|⎯|S|VDS= 10V, ID= 5A|
|Diode Forward Voltage (Note 8)|VSD|⎯|0.7|1.0|V|IS= 2.25A, VGS= 0V|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~Rn~~|||||||
|Input Capacitance<br>~~a~~<br>~~——~~|Ciss<br>~~a~~<br>~~——~~|⎯<br>~~a~~<br>~~——~~|143<br>~~a~~<br>~~——~~|⎯<br>~~a~~<br>~~——~~|pF<br>~~a~~<br>~~——~~|VDS= 10V, VGS= 0V<br>f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~a~~<br>~~a~~<br>~~——~~|Coss<br>~~a~~<br>~~a~~<br>~~——~~|⎯<br>~~a~~<br>~~a~~<br>~~——~~|74<br>~~a~~<br>~~a~~<br>~~——~~|⎯<br>~~a~~<br>~~a~~<br>~~——~~|pF<br>~~a~~<br>~~a~~<br>~~——~~||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~|⎯<br>~~——~~|29<br>~~——~~|⎯<br>~~——~~|pF<br>~~——~~||
|Gate Resisitance<br>~~——~~<br>~~Se~~|RG<br>~~——~~<br>~~Se~~|⎯<br>~~——~~<br>~~Se~~|202<br>~~——~~<br>~~Se~~|⎯<br>~~——~~<br>~~Se~~|Ω<br>~~——~~<br>~~Se~~|VGS= 0V, VDS= 0V, f = 1MHz<br>~~——~~<br>~~Se~~|
|**SWITCHING CHARACTERISTICS** **(Note 9)**<br>~~Se~~|~~Se~~||||||
|Total Gate Charge<br>~~Se~~|Qg<br>~~Se~~|⎯<br>~~Se~~|8.8<br>~~Se~~|⎯<br>~~Se~~|nC<br>~~Se~~|VGS= 4.5V, VDS= 10V, ID= 6.5A<br>~~Se~~<br>~~eee~~|
|Gate-Source Charge<br>~~Se~~|Qgs<br>~~Se~~|⎯<br>~~Se~~|1.4<br>~~Se~~|⎯<br>~~Se~~|nC<br>~~Se~~||
|Gate-Drain Charge<br>~~——_—~~|Qgd|⎯|3.0|⎯<br>~~eee~~|nC<br>~~eee~~||
|Turn-On DelayTime<br>~~——_—~~|tD(on)|⎯|53|⎯<br>~~eee~~|ns<br>~~eee~~|VDD= 10V, VGS= 4.5V,<br>RL= 10Ω, RG= 6Ω<br>~~eee~~|
|Turn-On Rise Time<br>~~a~~<br>~~——_—~~|tr<br>~~a~~|⎯<br>~~a~~|78<br>~~a~~|⎯<br>~~a~~<br>~~eee~~|ns<br>~~a~~<br>~~eee~~||
|Turn-Off DelayTime<br>~~a~~<br>~~——_—~~|tD(off)<br>~~a~~|⎯<br>~~a~~|562<br>~~a~~|⎯<br>~~a~~<br>~~eee~~|ns<br>~~a~~<br>~~eee~~||
|Turn-Off Fall Time<br>~~——_—~~|tf|⎯|234|⎯<br>~~eee~~|ns<br>~~eee~~||



Notes: 8. Test pulse width t = 300ms. 9. Guaranteed by design.  Not subject to production testing. 

2 of 6 **www.diodes.com** 

DMG6968UDM Document number: DS31758 Rev. 5 - 2 

June 2014 © Diodes Incorporated 

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DMG6968UDM<br>30 20<br>VGS = 8.0V<br>25 V GS = 4.5V VGS = 3.0V<br>VGS = 2.5V 16<br>VGS = 2.0V VDS = 5V<br>20<br>12<br>15<br>8<br>10 V GS  = 1.5V TA = 150°C<br>TA = 125°C<br>5 4 T A  = 85°C TA = 25°C<br>T A  = -55°C<br>0 0<br>0 0.5 1 1.5 2 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.05 0.05<br>0.04 0.04 V GS = 4.5V<br>VGS = 1.8V TA = 150°C<br>0.03 0.03<br>TA = 125°C<br>VGS = 2.5V<br>TA = 85°C<br>0.02 a V GS = 4.5V 0.02 TA = 25°C<br>TA = -55°C<br>0.01 0.01<br>0 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance  Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.05<br>1.4 0.04<br>VGS = 2.5V<br>1.2 ID = 5.5A 0.03 VIGSD = 5.5A = 2.5V<br>VGS = 4.5V<br>ID = 6.5A<br>1.0 0.02 V GS  = 4.5V<br>ID = 5.5A<br>a<br>0.8 0.01<br>a<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>[:]<br>DMG6968UDM 3 of 6<br>Document number: DS31758 Rev. 5 - 2 www.diodes.com   © Diodes Incorporated<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)ID<br>NEW PRODUCT<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>, DRAIN-SOURCE<br>DS(ON) ON-RESISTANCE (<br>DS(ON) R<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


June 2014 © Diodes Incorporated 

**DMG6968UDM** 

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1.0 20<br>0.8 16<br>ID = 1mA<br>0.6 12<br>ID = 250µA<br>0.4 8<br>TA = 25 ° C<br>0.2 4<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,000 100,000<br>f = 1MHz<br>10,000<br>TA = 150°C<br>1,000 TA = 125°C<br>Ciss<br>100<br>C oss<br>100<br>TA = 85°C<br>C rss 10<br>TA = -55 ° C TA = 25 ° C<br>a Eee<br>10 1<br>0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>1<br>D = 0.7<br>D = 0.5<br>D = 0.1<br>0.1<br>D = 0.05<br>D = 0.9<br>D = 0.02<br>D = 0.01 R θJA (t) = r(t) * R θJA<br>RθJA = 176°C/W<br>0.01<br>D = 0.005<br>P(pk)<br>t 1<br>D = Single Pulse t 2<br>TJ - TA = P * RθJA(t)<br>Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>4 of 6<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V) IS<br>GS(TH)<br>V<br>C, CAPACITANCE (pF) , LEAKAGE CURRENT (nA)<br>IDSS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


DMG6968UDM Document number: DS31758 Rev. 5 - 2 

June 2014 © Diodes Incorporated 

**www.diodes.com** 

**DMG6968UDM** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

|J<br>K|A<br>L<br>D<br>B<br>C<br>~~H~~<br>~~i~~<br>~~—~~|||||M|**SOT26**<br>**Dim**<br>**Min**<br>**Max Typ**<br>**A**<br>0.35<br>0.50 0.38<br>**B**<br>1.50<br>1.701.60<br>**C**<br>2.70<br>3.00 2.80<br>**D**<br>⎯<br>⎯<br>0.95<br>**H**<br>2.90<br>3.10 3.00<br>**J**<br>0.013<br>0.10 0.05<br>**K**<br>1.00<br>1.301.10<br>**L**<br>0.35<br>0.55 0.40<br>**M**<br>0.10<br>0.20 0.15<br>α<br>0°<br>8°<br>⎯<br>**All Dimensions in mm**<br>~~====~~<br>~~===~~|
|---|---|---|---|---|---|---|---|



## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

|~~X~~<br>Z<br>Y<br>C1<br>~~C2~~<br>~~C2~~<br>G<br>k~~e ae 4~~<br>~~eee~~<br>~~fooo~~<br>IK<br>>|||**Dimensions**<br>**Z**<br>**G**<br>**X**<br>**Y**<br>**C1**<br>**C2**|**Value(in mm)**<br>3.20<br>1.60<br>0.55<br>0.80<br>2.40<br>0.95|
|---|---|---|---|



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DMG6968UDM Document number: DS31758 Rev. 5 - 2 

June 2014 © Diodes Incorporated 

**DMG6968UDM** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMG6968UDM Document number: DS31758 Rev. 5 - 2 

June 2014 © Diodes Incorporated