Illustrative purposes only
DMG6602SVTQ-7
Dual MOSFET, Complementary N and P Channel, 30 V, 3.4 A, 0.038 ohm, TSOT-26, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 840mW
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.038ohm
- Transistor Case Style: TSOT-26
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3.4A
- Power Dissipation N Channel: 840mW
- Power Dissipation P Channel: 840mW
- Gate Source Threshold Voltage Max: 2.3V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.4A
- Continuous Drain Current Id P Channel: 3.4A
- Drain Source On State Resistance N Channel: 0.038ohm
- Drain Source On State Resistance P Channel: 0.038ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.151 € |
| Current stock | 4075 |
| Lead time | 7 days |
Datasheet
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