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DMG6602SVT
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 2.8 A, 0.06 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 840mW
- Power Dissipation P Channel: 840mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.4A
- Continuous Drain Current Id P Channel: 2.8A
- Drain Source On State Resistance N Channel: 0.06ohm
- Drain Source On State Resistance P Channel: 0.095ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.075 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at April 10, 2026