DMG6602SVT

Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 2.8 A, 0.06 ohm

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: DIODES INC.
Product type: Dual MOSFETs
Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: Complementary N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: TSOT-26
Operating Temperature Max: 150°C
Power Dissipation N Channel: 840mW
Power Dissipation P Channel: 840mW
Drain Source Voltage Vds N Channel: 30V
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id N Channel: 3.4A
Continuous Drain Current Id P Channel: 2.8A
Drain Source On State Resistance N Channel: 0.06ohm
Drain Source On State Resistance P Channel: 0.095ohm

Delivery and price
Units per pack	5000
Price	0.079 €
Current stock	1000+
Lead time	30 days

Datasheet

Updated at April 29, 2026

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