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DMG6602SVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Vo
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 840mW
- Power Dissipation P Channel: 840mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.4A
- Continuous Drain Current Id P Channel: 3.4A
- Drain Source On State Resistance N Channel: 0.038ohm
- Drain Source On State Resistance P Channel: 0.038ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.084 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**NOT RECOMMENDED FOR NEW DESIGN USE DMC3071LVT DMG6602SVT** ## **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**V(BR)DSS**|**RDS(on)**|**ID**<br>TA= +25°C| |Q1|30V|60mΩ @ VGS= 10V|3.4A| |||100mΩ @ VGS= 4.5V|2.7A| |Q2|-30V|95mΩ @ VGS= -10V|-2.8A| |||140mΩ @ VGS= -4.5V|-2.3A| ## **Features and Benefits** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** ## **Description and Applications** This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ## **Mechanical Data** - Case: TSOT26 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals Connections: See Diagram - Backlighting - Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - DC-DC Converters - • Power Management Functions - Weight: 0.013 grams (Approximate) **==> picture [452 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> •<br>D1 D2<br>TSOT26<br>G1 1 6 D1 G1 G2<br>S2 2 5 S1<br>G2 3 4 D2<br>we PV S1 & S2<br>Top View Top View Q1 N-Channel Q2 P-Channel<br> Information (Note 3)<br>Part Number Case Packaging<br>DMG6602SVT-7 TSOT26 3000 / Tape & Reel<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 3) - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** 66C = Product Type Marking Code YM = Date Code Marking **66C** Y = Year (ex: X = 2010) M = Month (ex: 9 = September) ~~_~~ Date Code Key **Year 2010 2011 2012 2013 2014 2015 2016 2017 Code** X Y Z A B C D E ~~[_ |} ——} ——} + ——} ——} ——}——} ——_~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~4~~ **Code** 1 2 3 4 5 6 7 8 9 ~~+~~ O ~~—~~ N D DMG6602SVT 1 of 10 December 2018 Document number: DS35159 Rev. 8 - 3 **www.diodes.com** © Diodes Incorporated **DMG6602SVT** ## **Maximum Ratings – Q1** (@TA = +25°C unless otherwise specified.) |**Maximum Ratings – Q1gs – Q1s – Q1**(@TA = +25°C unless otherwise specified.)|**Maximum Ratings – Q1gs – Q1s – Q1**(@TA = +25°C unless otherwise specified.)|**Maximum Ratings – Q1gs – Q1s – Q1**(@TA = +25°C unless otherwise specified.)|||| |---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 6) VGS= 10V|Steady State|TA = +25°C<br>TA = +70°C|ID|3.4<br>2.7|A| |Continuous Drain Current (Note 6) VGS= 4.5V|Steady State|TA = +25°C<br>TA = +70°C|ID|2.7<br>2.2|A| |MaximumContinuousBodyDiodeForward Current (Note 6)|||IS|1.5|A| |Pulsed Drain Current(Note 6)|||IDM|25|A| ## **Maximum Ratings – Q2** (@TA = +25°C unless otherwise specified.) |**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|-30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 6) VGS= -10V|Steady State|TA = +25°C<br>TA = +70°C|ID|-2.8<br>-2.4|A| |Continuous Drain Current (Note 6) VGS= -4.5V|Steady State|TA = +25°C<br>TA = +70°C|ID|-2.3<br>-2.1|A| |Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-1.5|A| |Pulsed Drain Current(Note 6)|||ID|-20|A| ## **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation (Note 5)|TA= +25°C|PD|0.84|W| ||TA= +70°C||0.52|| |Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RϴJA|155|°C/W| ||t < 10s||109|| |Total Power Dissipation (Note 6)|TA= +25°C|PD|1.27|W| ||TA= +70°C||0.8|| |Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RϴJA|102|°C/W| ||t< 10s||71|| |Thermal Resistance,Junction to Case(Note 6)||RϴJC|34|| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C| 2 of 10 **www.diodes.com** DMG6602SVT Document number: DS35159 Rev. 8 - 3 December 2018 © Diodes Incorporated **DMG6602SVT** **Electrical Characteristics – Q1 NMOS** (@TA = +25°C unless otherwise specified.) **==> picture [519 x 521] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |GO|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |CT|OFF CHARACTERISTICS (Note 7)| |QQ|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS = 0V, ID = 250µA| |QD|Zero Gate Voltage Drain Current|IDSS|—|—|QO|1.0|OS|µA|(|VDS = 24V, VGS = 0V| |QO|Gate-Source Leakage|IGSS|—|—|±100|nA|(|VGS = ±20V, VDS = 0V| |CT|ON CHARACTERISTICS (Note 7)| |GD|Gate Threshold Voltage|VGS(th)|1.0|—|2.3|V|VDS = VGS, ID = 250μA| |QO|(| |38|60|VGS = 10V, ID = 3.1A| |Static Drain-Source On-Resistance|RDS (ON)|—|55|100|mΩ|||VGS = 4.5V|em|, ID = 2A| |if| |Pf|Forward Transfer Admittance||Yfs||—|4|—|S|VDS = 5V, ID = 3.1A| |Pf|Diode Forward Voltage|VSD|—|0.8|dl|1|V|Il|VGS = 0V, IS = 1A| |a|DYNAMIC CHARACTERISTICS (Note 8)|,| |Input Capacitance|Ciss|—|290|400|OY|Ae|ee| |ee|Output Capacitance|Coss|—|40|80|pF|Vf = 1.2MHz DS = 15V, VGS = 0V,| |Oe|Reverse Transfer Capacitance|Crss|—|40|80| |Pf|Gate Resistance|Rg|—|1.4|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz| |a|Total Gate Charge (VGS = 4.5V)|Qg|—|4|6|Oe>|VDS = 15V, VGS = 4.5V, ID = 3.1A| ||| |a|Total Gate Charge (VGS = 10V)|Qg|—|9|(|13|nC| |||Gate-Source Charge|Qgs|—|1.2|—|VDS = 15V, VGS = 10V, ID = 3A| |ee|Gate-Drain Charge|Qgd|—|1.5|—| |a|Turn-On Delay Time|tD(on)|—|3|—| |Dd|Turn-On Rise Time|tr|—|5|—|VGS = 10V, VDS = 15V,| |ns| |||Turn-Off Delay Time|tD(off)|—|13|—|RG = 3Ω, RL = 4.7Ω| |Turn-Off Fall Time|tf|—|3|—| |pd|NT| |Notes:|7. Short duration pulse test used to minimize self-heating effect.| |8. Guaranteed by design. Not subject to product testing.| |10.0|10| |A|/|VDS= 5.0V| |8.0|ITA Ip(A) @ Vgg=10V|8| |°|*| |Ip(A)|@|Veg=4.5V| |6.0||rwa|Ip(A)|@ Veg=3.5V|6| |4.0||p|4|Ave|Veg(V)|@ 125°C|If| |Ip(A)|@|Veg=4.0V|fy| |2| |2.0| |i|ms|—|oe|[||]|Ave|VeelV)|@|25°C| |0.0|ce|A|0|“| |0|0.5|1|1.5|2|2.5|3|3.5|4|4.5|5|0|1|2|3|4|5| |VDS, DRAIN -SOURCE VOLTAGE(V)|VGS, GATE SOURCE VOLTAGE(V)| |Fig. 1 Typical Output Characteristics|Fig. 2 Typical Transfer Characteristics| **----- End of picture text -----**<br> 3 of 10 **www.diodes.com** DMG6602SVT Document number: DS35159 Rev. 8 - 3 December 2018 © Diodes Incorporated **DMG6602SVT** **==> picture [481 x 658] intentionally omitted <==** **----- Start of picture text -----**<br> 1 0.16<br>VGS = 4.5V<br>Seee=e==== —<br>oe 0.12 _ Ave R DS(ON) ( [Ω] ) @ 150°C<br>Ave RDS(ON)( [Ω] ) @ 125°C<br>0.1 RDS(ON)(Ω) Ave @ VG=4.5V 0.08<br>Ave RDS(ON)( [Ω] ) @ 85°C<br>Ave RDS(ON)( [Ω] ) @ 25°C<br>ao R DS(ON) (Ω) Ave @ V G =10V 0.04 YT, Ave RDS(ON)( [Ω] ) @ -55°C<br>0.01 0<br>0 4 8 12 16 20 0 2 4 6 8 10<br>Peer ID, DRAIN SOURCE CURRENT ID ene , DRAIN SOURCE CURRENT (A)<br>Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.6 0.1<br>1.4 0.08<br>Bg ZY WES<br>1.2 0.06<br>TA NEE<br>1 0.04<br>AES So<br>0.8 0.02<br>ZOO<br>0.6 0<br>-50 OM -25 0 25 50 75 100 125 K 150 P -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>2.4 10<br>2.0<br>8<br>ID= 250µA<br>1.6 VSD(V) @ VDS=0V TA= 25°C<br>6<br>1.2 ID= 1mA<br>4<br>0.8<br>0.4 2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>)<br>) Ω<br>,DRAIN-SOURCE ON-RESISTANCE(Ω , DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON) DS(ON)<br>R R<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> 4 of 10 **www.diodes.com** DMG6602SVT Document number: DS35159 Rev. 8 - 3 December 2018 © Diodes Incorporated **DMG6602SVT** fs ## tu coRPORATE D® **==> picture [470 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10<br>f = 1MHz<br>C ISS Ave (pF) 8<br>VDS = 10V<br>ID = 3.0A<br>COSS Ave (pF) 6<br>100<br>4<br>CRSS Ave (pF) 2<br>10 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg [, TOTAL GATE CHARGE ] (nC)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Gate Charge<br>100<br>Po<br>[oT a<br>RLimitedDS(on) PW = 100µs<br>10 Lf PONSTTING lll<br>PT [Ty”] IMO il<br>Post<br>PT ANNNT NONNTT TTIET<br>1 SRA DC NAT<br>reee ee PW = 10sP WP = 1sW = 100ms NSSOENWSK UINTTT 4NaeNST= BTSa<br>PT PW = 10ms Wk a<br>0.1 TJ(max) = 150°C | PW = 1ms SS<br>TA = 25°C a a a A DP<br>VGS = 10V a<br>Single Pulse<br>DUT on 1 * MRP Board || lie RL | Hi al<br>0.01 JAi<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 SOA, Safe Operation Area<br> GATE THRESHOLD VOLTAGE (V)<br>, JUNCTION CAPACITANCE (pF)CT VGS<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 5 of 10 **www.diodes.com** DMG6602SVT Document number: DS35159 Rev. 8 - 3 December 2018 © Diodes Incorporated **DMG6602SVT** **Electrical Characteristics – Q2 PMOS** (@TA = +25°C unless otherwise specified.) **==> picture [518 x 522] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |GO|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |CT|OFF CHARACTERISTICS (Note 7)| |eG|Drain-Source Breakdown Voltage|BVDSS|-30|—|QO|—|V|VGS = 0V, ID = -250µA| |QQ|Zero Gate Voltage Drain Current|IDSS|—|—|-1.0|µA|VDS = -24V, VGS = 0V| |QO|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = ±20V, VDS = 0V| |CT|ON CHARACTERISTICS (Note 7)| |eG|Gate Threshold Voltage|VGS(th)|-1.0|—|-2.3|V|VDS = VGS, ID = -250μA| |Static Drain-Source On-Resistance|RDS (ON)|—|73 99|QO|140 95|mΩ||em|[V]|V|[GS]|GS|[ = -10V]|= -4.5V|[,]|,|[ I]|I|[D]|D|[ = -2.7A ]|= -2A| |[ef| |Pf|Forward Transfer Admittance||Yfs||—|6|—|S|VDS = -5V, ID = -2.7A| |Pf|Diode Forward Voltage|VSD|—|-0.8|dle|-1.0|V|I|VGS = 0V, IS = -1A| |Le|DYNAMIC CHARACTERISTICS (Note 8)| |a|Input Capacitance|Ciss|—|350|420| |ee|Output Capacitance|Coss|—|50|100|pF|Vf = 1.2MHz DS = -15V, VGS = 0V,| |Oe|Reverse Transfer Capacitance|Crss|—|45|80| |a|Gate Resistance|Gd|Rg|—|17.1|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz| |Total Gate Charge (VGS = -4.5V)|Qg|—|4|6|D>|VDS = -15V, VGS = -4.5V, ID = -3A| |a||| |Total Gate Charge (VGS = -10V)|Qg|—|7|(|9|nC| |||Gate-Source Charge|Qgs|—|0.9|—|VDS = -15V, VGS = -10V, ID = -3A| |ee|Gate-Drain Charge|Qgd|—|1.2|—| |a|Turn-On Delay Time|tD(on)|—|4.8|—| |Dd|Turn-On Rise Time|tr|—|7.3|—|VGS = -10V, VDS = -15V,| |ns| |||Turn-Off Delay Time|tD(off)|—|20|—|RG = 6Ω, RL = 15Ω| |Turn-Off Fall Time|tf|—|13|—| |pd|NT| |Notes:|7. Short duration pulse test used to minimize self-heating effect.| |8. Guaranteed by design. Not subject to production testing.| |8.0|8| |6.0||[eee|7|6|ae|U/)| |Pr.|/|Ip(A)|@ Veg=4.0V|/| |4.0|)|~Goaaaa=.|4|BEeee eee| |2.0|WS-||le|Ip(A)|@|Vgg=2.5V|2|PTT|[tA]|||EE| |0.0|S,O|w|0|CoAT| |0|0.5|1|1.5|2|2.5|3|3.5|4|4.5|5|0|0.5|1|1.5|2|2.5|3|3.5|4|4.5|5| |VDS, DRAIN -SOURCE VOLTAGE(V)|VGS, GATE SOURCE VOLTAGE(V)| |Fig. 12 Typical Output Characteristics|Fig. 13 Typical Transfer Characteristics| **----- End of picture text -----**<br> 6 of 10 **www.diodes.com** DMG6602SVT Document number: DS35159 Rev. 8 - 3 December 2018 © Diodes Incorporated **DMG6602SVT** **==> picture [476 x 664] intentionally omitted <==** **----- Start of picture text -----**<br> 0.4 0.2<br>a RDS(ON)(Ω) Ave @ VG=2.5V i VGS= 4.5V<br>0.35<br>0.16 Ave R DS(ON) ( [Ω] ) @ 150°C Ave RDS(ON)( [Ω] ) @ 125°C<br>0.3<br>SeEEE ee<br>0.25 0.12 —<br>0.2 Ave R DS(ON) ( [Ω] ) @ 85°C<br>0.15 | 0.08 — Ave RDS(ON)( [Ω] ) @ 25°C<br>RDS(ON)(Ω) Ave @ VG=4.5V<br>0.1 0.04 Ave R DS(ON) ( [Ω] ) @ -55°C<br>0.05 oe YH -<br>RDS(ON)(Ω) Ave @ VG=10V<br>0 0<br>0 2 4 6 8 0 2 4 6 8<br>Tfi tt... iK® «Nee<br>ID, DRAIN SOURCE CURRENT ID, DRAIN SOURCE CURRENT (A)<br>Fig. 14 Typical On-Resistance vs. Fig. 15 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.6 0.2 YON<br>1.4 0.16<br>1.2 0.12<br>Ks ae<br>1 0.08<br>AED CW<br>0.8 0.04<br>0.6 ASN 0<br>-50 “| -25 0 LOX 25 50 75 100 125 « 150 -50 LiL -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 16 On-Resistance Variation with Temperature Fig. 17 On-Resistance Variation with Temperature<br>2 GY 8<br>CRT ptt<br>1.6<br>6<br>1.2 Sere ee<br>NOOR TTL<br>4<br>0.8 Swann tL<br>2<br>0.4 Pry ty yy P| | | ify<br>0 Ty yd 0 eeTAL<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE -DRAIN VOLTAGE (V)<br>Fig. 18 Gate Threshold Variation vs. Ambient Temperature Fig. 19 Diode Forward Voltage vs. Current<br>)<br>) Ω<br>Ω , DRAIN-SOURCE ON-RESISTANCE(<br>,DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>DS(ON) R<br>R<br>)Ω<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>, SOURCE CURRENT (V)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> 7 of 10 **www.diodes.com** DMG6602SVT December 2018 © Diodes Incorporated Document number: DS35159 Rev. 8 - 3 **DMG6602SVT** **==> picture [467 x 651] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10<br>f = 1MHz<br>C ISS Ave(pF) 8<br>VDS = -15<br>ID = -3A<br>6<br>100<br>4<br>C OSS Ave(pF)<br>CRSS Ave(pF)<br>2<br>10 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Qg [, TOTAL GATE CHARGE ] Fig. 21 Gate Charge (nC)<br>Fig. 20 Typical Junction Capacitance<br>100<br>Sth ©<br>po R DS(on) x<br>Limited PW = 100µs<br>10 tl7 RTI<br>—ee<br>SS— en)<br> ENRON<br>1 2 DC SAN IENEN ZS<br>ee P W = 10s [INS INTENT PERT<br>I[Te PWP = 1s W = 100ms INNGSNs BE<br>0.1 TJ(max) = 150°C —— PW = 10ms PW SS = 1ms aNAWFASS<br>TA = 25°C a—a Ne,ee ane<br>VGS = -10V a See<br>Single Pulse<br>DUT on 1 * MRP Board ~ ap Ue I al<br>0.01 BAB<br>0.1 1 ‘Wy, 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 22 SOA, Safe Operation Area<br>1<br>—a<br>bo D = 0.7 Ceee FN a<br>D = 0.5 ee ee eer TT Nn mmr<br>aa imme aN<br>D = 0.3<br>D = 0.9<br>0.1 a7,mnGay iia oA TNT ATEN<br>D = 0.1<br>RD rt<br>bene [ae] TOOa| grit ty eeeee<br>ave D = 0.05 i a 7cAg<br>A TIPE<br>D = 0.02<br>Se<br>0.01<br>er D = 0.01 a aE<br>PNa a nce ce a80Sie | se eea eee|<br>D = 0.005<br>beAT OT TTT RθJA(t) = r(t) * RθJA C<br>R θJA = 164C/W<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001 Coal CI CCCP :<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 23 Transient Thermal Resistance<br>, JUNCTION CAPACITANCE (pF)T GATE THRESHOLD VOLTAGE (V)<br>C GS<br>-V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 8 of 10 **www.diodes.com** DMG6602SVT Document number: DS35159 Rev. 8 - 3 December 2018 © Diodes Incorporated **DMG6602SVT** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [470 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> TSOT26<br>D<br>e1 0 1( 4x)<br>TSOT26<br>E1/2 Dim Min Max Typ<br>E/2 A − 1.00 −<br>A1 0.010 0.100 −<br>E1 E c A2 0.840 0.900 −<br>Gauge Plane D 2.800 3.000 2.900<br>0 E 2.800 BSC<br>Seating Plane E1 1.500 1.700 1.600<br>L b 0.300 0.450 −<br>L2<br>Fh c 0.120 0.200 −<br>e b 0 1( 4x) e 0.950 BSC<br>e1 1.900 BSC<br>A2<br>L 0.30 0.50 −<br>A1 L2 0.250 BSC<br>A θ 0° 8° 4°<br>Seating Plane θ1 4° 12° −<br>All Dimensions in mm<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **TSOT26** **==> picture [352 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>aie Dimensions Value (in mm)<br>C 0.950<br>Y1 X 0.700<br>Y 1.000<br>Y1 3.199<br>Y<br>X<br>fain<br>**----- End of picture text -----**<br> 9 of 10 **www.diodes.com** DMG6602SVT Document number: DS35159 Rev. 8 - 3 December 2018 © Diodes Incorporated **DMG6602SVT** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. & Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express ES written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for NE use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and Se acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** 10 of 10 **www.diodes.com** DMG6602SVT Document number: DS35159 Rev. 8 - 3 December 2018 © Diodes Incorporated
Updated at June 9, 2026
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