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DMG6601LVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 850mW
- Power Dissipation P Channel: 850mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.8A
- Continuous Drain Current Id P Channel: 3.8A
- Drain Source On State Resistance N Channel: 0.034ohm
- Drain Source On State Resistance P Channel: 0.034ohm
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.072 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMG6601LVT** -—— **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
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**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Device V(BR)DSS|RDS(ON) max|Package|TAI = +25°CD max|
|55mΩ @ VGS = 10V|TSOT26|3.8A|
|Q1|30V|
|65mΩ @ VGS = 4.5V|TSOT26|3.6A|
|110mΩ @ VGS = -10V|TSOT26|-2.5A|
|Q2|-30V|
|142mΩ @ VGS = -4.5V|TSOT26|-2.1A|
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## **Features**
- Complementary MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
## **Description**
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Mechanical Data**
- Case: TSOT26
- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See diagram
## **Applications**
- Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4**
- Backlighting
- Weight: 0.008 grams (approximate)
- Power Management Functions
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<br>D1 D2<br>TSOT26<br>Q1 Q2<br>G1 1 6 D1<br>S2 2 5 S1<br>G1 G2<br>G2 3 4 D2<br>~/ Top View i: a S1 at S2<br>Top View<br>N-Channel P-Channel<br>Device Schematic<br> Information (Note 4)<br>Part Number Case Packaging<br>DMG6601LVT-7 TSOT26 3K/Tape & Reel<br>**----- End of picture text -----**<br>
- DC-DC Converters
## **Ordering Information** (Note 4)
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
## **Marking Information**
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|66G = Product Type Marking Code|
|66G|YM = Date Code Marking|
|Y = Year (ex: X = 2010)|
|M = Month (ex: 9 = September)|
|oul|
|Date Code Key|
|Year|2011|2012|2013|2014|2015|2016|2017|
|Code|Y|Z|A|B|C|D|E|
|[_|ft|
|Month|Jan|Feb|Mar|Apr|May|Jun|Jul|Aug|Sep|Oct|Nov|Dec|
|Code|1|2|3|4|5|6|7|8|9|O|N|D|
|[_————|—}|—|—|—}|—}|—|—|—_|}—_|}—_|+|—_|—¥_|
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1 of 9
DMG6601LVT Document number: DS35405 Rev. 4 - 2
August 2013 © Diodes Incorporated
**www.diodes.com**
**DMG6601LVT**
## **Maximum Ratings - Q1 and Q2** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings - Q1 and Q2gs - Q1 and Q2s - Q1 and Q2 - Q1 and Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 and Q2gs - Q1 and Q2s - Q1 and Q2 - Q1 and Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 and Q2gs - Q1 and Q2s - Q1 and Q2 - Q1 and Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Q1 **|**Q2 **|**Units**|
|Drain-Source Voltage|||VDSS|30|-30|V|
|Gate-Source Voltage|||VGSS|±12|±12|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|3.8<br>3.0|-2.5<br>-2|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|4.5<br>3.4|-3<br>-2.3|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|1.5|-1.5|A|
|Pulsed Drain Current(Note 6)|||IDM|20|-15|A|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.85|W|
||TA= +70°C||0.54||
|Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RJA|147|°C/W|
||t<10s||103||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.3|W|
||TA= +70°C||0.83||
|Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RJA|96|°C/W|
||t<10s||67||
|Thermal Resistance,Junction to Case(Note 6)||RJC|36||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
## **Electrical Characteristics** - **Q1** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics**-**Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|-|-|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current@TJ= +25°C|IDSS|-|-|1|μA|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|-|-|±100|nA|VGS= ±12V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **|||||||
|Gate Threshold Voltage|VGS(th)|0.5|1|1.5|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance|RDS (ON)|-|34|55|mΩ|VGS= 10V,ID= 3.4A|
|||-|38|65||VGS= 4.5V,ID= 3A|
||||49|85||VGS= 2.5V,ID= 2A|
|Forward Transfer Admittance||Yfs||-|6|-|S|VDS= 5V,ID= 3.4A|
|Diode Forward Voltage(Note 7)|VSD|-|0.75|1.0|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|-<br>~~———~~|422<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|-<br>~~———~~|41<br>~~———~~|-<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|-<br>~~———~~|39<br>~~———~~|-<br>~~———~~|pF<br>~~———~~||
|Gate resistance<br>~~———~~<br>~~———~~|Rg<br>~~———~~|~~———~~|1.26<br>~~———~~|-<br>~~———~~<br>~~ee~~|Ω<br>~~———~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~———~~<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg|-|5.4|-<br>~~ee~~|nC<br>~~ee~~|VGS= 10V, VDS= 15V,<br>ID= 3.1A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg||12.3|-<br>~~ee~~|nC<br>~~ee~~||
|Gate-Source Charge<br>~~———~~|Qgs|-|0.8|-<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~———~~<br>~~—<€~~|Qgd|-|1.2|-<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~———~~<br>~~—<€~~|tD(on)|-|1.6|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDS= 15V, VGS= 10V,<br>RL= 4.7Ω, RG=3Ω,<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~—<€~~|tr|-|7.4|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<€~~|tD(off)|-|31.2|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<€~~|tf|-|15.6|-<br>~~ee~~|ns<br>~~ee~~||
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 9 **www.diodes.com**
DMG6601LVT Document number: DS35405 Rev. 4 - 2
August 2013 © Diodes Incorporated
**DMG6601LVT**
## **Electrical Characteristics** - **Q2** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics**-**Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **<br>**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **<br>~~—_—_—~~||||||
|Drain-Source Breakdown Voltage<br>~~—_—_—~~|BVDSS<br>~~—_—_—~~|-30<br>~~—_—_—~~|-<br>-<br>~~—_—_—~~|V<br>VGS<br>~~—_—_—~~|GS= 0V,ID= -250μA<br>~~—_—_—~~|
|Zero Gate Voltage Drain Current@TJ= +25°C<br>~~—_—_—~~|IDSS<br>~~—_—_—~~|-<br>~~—_—_—~~|-<br>-1<br>~~—_—_—~~|μA<br>VDS<br>~~—_—_—~~|DS= -30V,VGS= 0V<br>~~—_—_—~~|
|Gate-Source Leakage<br>~~—_—_—~~|IGSS<br>~~—_—_—~~|-<br>~~—_—_—~~|-<br>±100<br>~~—_—_—~~|±100<br>nA<br>VGS<br>~~—_—_—~~|GS= ±12V,VDS= 0V<br>~~—_—_—~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~ee~~||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-0.4<br>~~ee~~|-0.8<br>-1.2<br>~~ee~~|V<br>VDS<br>~~ee~~|DS= VGS,ID= -250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~|~~|RDS (ON)<br>~~|~~|-<br>~~|~~|70<br>110<br>~~|~~|mΩ<br>VGS<br>VGS<br>VGS<br>~~|~~|GS= -10V,ID= -2.3A<br>~~|~~|
|||-<br>~~|~~|81<br>142<br>~~|~~||GS= -4.5V,ID= -2A<br>~~|~~|
|||~~|~~|105<br>190<br>~~|~~||GS= -2.5V,ID= -1A<br>~~|~~|
|Forward Transfer Admittance<br>~~|~~<br>~~———_—~~||Yfs|<br>~~|~~<br>~~———_—~~|-<br>~~|~~|5.3<br>-<br>~~|~~<br>~~GO(CO~~|S<br>VDS<br>~~|~~<br>~~(CO (~~|DS= -5V,ID= -2.3A<br>~~|~~<br>~~(~~|
|Diode Forward Voltage(Note 7)<br>~~DG~~<br>~~———_—~~|VSD<br>~~DG~~<br>~~———_—~~|-<br>~~DG~~|-0.8<br>-1.0<br>~~DG~~<br>~~GO(CO~~|V<br>VGS<br>~~DG~~<br>~~(CO (~~<br>~~ee~~|GS= 0V,IS= -1A<br>~~DG~~<br>~~(~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~GO(CO (~~<br>~~———_—~~<br>~~ee~~||||||
|Input Capacitance<br>~~———_—~~|Ciss<br>~~———_—~~|-|541<br>-<br>~~GO(CO~~|pF<br>VDS<br>f = 1.0MHz<br>pF<br>pF<br>~~(CO (~~<br>~~ee~~|DS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~(~~<br>~~ee~~|
|Output Capacitance<br>~~———_—~~|Coss<br>~~———_—~~|-|46<br>-<br>~~GO(CO~~|||
|Reverse Transfer Capacitance<br>~~———_—~~|Crss<br>~~———_—~~|-|43<br>-<br>~~GO(CO~~|||
|Gate resistance<br>~~———_—~~<br>~~———~~|Rg<br>~~———_—~~|-|16.9<br>-<br>~~GO (CO~~<br>~~ee~~|Ω<br>VDS<br>~~(CO (~~<br>~~ee~~<br>~~ee~~|DS= 0V,VGS= 0V,f = 1.0MHz<br>~~(~~<br>~~ee~~<br>~~eee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~———~~|Qg|-|6.5<br>-<br>~~ee~~|nC<br>VGS<br>ID= -2.3A<br>nC<br>nC<br>nC<br>~~ee~~<br>~~eee~~|GS= -10V, VDS= -15V,<br>= -2.3A<br>~~eee~~<br>~~eee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg||13.8<br>-<br>~~ee~~|||
|Gate-Source Charge<br>~~———~~|Qgs|-|1.0<br>-<br>~~ee~~|||
|Gate-Drain Charge<br>~~———~~<br>~~——_—~~|Qgd|-|1.6<br>-<br>~~ee~~<br>~~eee~~|||
|Turn-On DelayTime<br>~~———~~<br>~~——_—~~|tD(on)|-|1.7<br>-<br>~~ee~~<br>~~eee~~|ns<br>VDS<br>RL= 6Ω, R<br>ns<br>ns<br>ns<br>~~ee~~<br>~~eee~~|DS= -15V, VGS= -10V,<br>= 6Ω, RG= 3Ω,<br>~~eee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~———~~<br>~~——_—~~|tr|-|4.6<br>-<br>~~ee~~<br>~~eee~~|||
|Turn-Off DelayTime<br>~~——_—~~|tD(off)|-|18.3<br>-<br>~~eee~~|||
|Turn-Off Fall Time<br>~~——_—~~|tf|-|2.2<br>-<br>~~eee~~|||
8. Guaranteed by design. Not subject to product testing.
## **N Channel - Q1**
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20 VGS = 10V VGS = 4.0V 20<br>V GS = 3.5V VDS = 5.0V<br>VGS = 5.0V<br>16 V GS = 3.0V<br>VGS = 4.5V VGS = 2.5V 15<br>12<br>10<br>peo<br>8<br>V GS = 2.0V<br>5<br>4 TA = 150°C<br>f———- —f TA = 125°C TA = 85°C |<br>TA = 25°C<br>TA = -55°C<br>0 fo 0<br>0 0.5 1.0 1.5 2.0 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I I<br>**----- End of picture text -----**<br>
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DMG6601LVT Document number: DS35405 Rev. 4 - 2
August 2013 © Diodes Incorporated
**DMG6601LVT**
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0.08 0.08<br>0.07 0.07 | tyyyy<br>Vit<br>0.06 0.06 |<br>VGS = 2.5V<br>AP}<br>0.05 VGS = 4.5V 0.05 | yy<br>0.04 0.04<br>SEEEECCE<br>VGS = 10V<br>0.03 0.03 I D = 2A<br>0.02 0.02 ORES|ittyyy<br>|e<br>0.01 0.01 yt yy<br>0 0 ti}<br>0 5 10 15 20 2 3 4 5 | 6 yyy 7 8 9 10<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 3 Typical On-Resistance vs. Fig. 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.10 1.8<br>0.09 V GS = 4.5V VGS 10= V<br>1.6 ID = 10A<br>0.08 PEE T A = 150°C Ee /<br>0.07 CCE 1.4 Jy<br>0.06 T A = 125°C VGSID = 5A= 4.5V<br>0.05 See TA = 85°C 1.2 “a<br>0.04 aoe T A = 25°C CELT<br>1.0<br>0.03<br>cece TA = -55°C a L<br>0.02<br>0.8<br>0.01 FERRER EE att<br>0 0.6<br>0 CECE 2 4 6 8 10 12 14 16 18 20 -50 Tite -25 0 25 50 ty 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 Typical On-Resistance vs. Fig. 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>0.10 1.6<br>0.09<br>|] tt ttt 1.4 P| ity<br>0.08<br>1.2<br>0.07<br>0.06 PERE 1.0 eee ID = 1mA<br>CEE VGS 4.5= V oe SS<br>0.05 I D = 5A 0.8 I D = 250µA<br>0.04 =a 0.6 SE<br>err oS<br>0.03 V GS 10= V<br>ID = 10A 0.4<br>0.02<br>0.2<br>0.01<br>0 0<br>-50 SEEEEEEE} -25 0 25 50 75 100 125 150 =) -50 Go -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 7 On-Resistance Variation with Temperature Fig. 8 Gate Threshold Variation vs. Ambient Temperature<br>)<br> )<br>, DRAIN-SOURCE ON-RESISTANCE ( <br>, DRAIN-SOURCE ON-RESISTANCE (<br>RDS(ON) RDS(ON)<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>)<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>V<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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DMG6601LVT Document number: DS35405 Rev. 4 - 2
August 2013 © Diodes Incorporated
**DMG6601LVT**
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1,000 ee<br>———_—————<br>ee ee ee Ciss<br>———<br>t+<br>100<br>QS SS<br>Coss<br>Crss<br>eS f = 1MHz<br>10<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>
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2018 ee eee ee 1,000 ———_—————<br>16<br>ey [a] ee ee ee<br>14<br>ee ———<br>12<br>ff t+<br>10 100<br>TA = 150°C<br>aa | QS<br>8<br>TA = 125°C<br>6<br>TA = 85°C<br>4<br>a TA = 25°C eS f = 1MHz<br>2<br>TA = -55°C<br>0 EB 10<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Diode Forward Voltage vs. Current Fig. 10 Typical Junction Capacitance<br>10<br>8<br>VDS = 15V<br>ID 3.1= A<br>TY<br>6 AL /<br>42 EVannae<br>0<br>0 2 4 6 8 10 12 14<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Fig. 11 Gate Charge<br>1 D = 0.9<br>D = 0.7<br>PCIEHICH D = 0.5 D = 0.3 FerreH Lge TEHI<br>0.1<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>TEA HT LTH tT<br>0.01<br>D = 0.01<br>D = 0.005 R JA (t) = r(t) * R JA<br>RJA = 143°C/W<br>Pe IIL ETT EE EE LT<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 SEE 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 12 Transient Thermal Resistance<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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**DMG6601LVT**
## **P Channel - Q2**
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10 10<br>VGS = -10V<br>VGS = -5.0V VDS = -5.0V<br>8 VGS = -4.5V VGS = -4.0V 8<br>VGS = -3.5V<br>VGS = -3.0V<br>6 V GS = -2.5V 6<br>—_— VGS = -2.0V fe<br>4 4<br>2 2 TA = 125TA = 150C C TAT = 25A = 85CC<br>0 0 TA = -55C<br>0 0.5 1.0 1.5 2.0 0 1 2 3 4<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 13 Typical Output Characteristics Fig. 14 Typical Transfer Characteristics<br>0.20 0.16<br>0.18 es ee<br>0.16<br>0.12<br>0.14<br>FEES ORES<br>0.12<br>VGS = -2.5V<br>0.10 VGS = -4.5V 0.08<br>ID = -2A<br>0.08<br>VGS = -10V<br>0.06<br>See Be 0.04 fangeces<br>0.04<br>0.02 ero AES<br>0 0<br>TT | Tf Pitt | tt ty<br>0 2 4 6 8 10 2 3 4 5 6 7 8 9 10<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 15 Typical On-Resistance vs. Fig. 16 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.20 1.8<br>V GS = -4.5V<br>0.16 - + +—+}— 1.6 {tL VID GS = -10A= -10V<br>T A = 150C<br>1.4<br>0.12 SoS T A = 125C te<br>T A = 85C 1.2 VIDGS = -5A = -4.5V<br>0.08 TA = 25C<br>——— 1.0 ee<br>= Ean<br>TA = -55C<br>0.04<br>0.8<br>a ert4<br>0 0.6<br>0 ee 2 4 6 8 10 -50 EEE -25 0 25 50 ELE 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 17 Typical On-Resistance vs. Fig. 18 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I -I<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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**DMG6601LVT**
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0.16 1.6<br>1.4<br>| ty ty tt<br>VGS -4.= 5V<br>0.12 I D -5= A 1.2<br>| ty ty tt<br>1.0<br>| | | tt | |<br>0.08 VIDGS -10= = -10VA 0.8 SS -ID = 1mA<br>-ID = 250µA<br>0.6 SS<br>0.04 0.4<br>0.2<br>0-50 -25 0 25 50 75 100 125 150 0-50 |} -25 tt 0 25 [tt] 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (°C)<br><< | ty ty Ss<br>Fig. 19 On-Resistance Variation with Temperature Fig. 20 Gate Threshold Variation vs. Ambient Temperature<br>10 1,000<br>f = 1MHz<br>8 Ciss<br>Tyo SS<br>6<br>a<br>100<br>4 C oss<br>TA= 150C Crss<br>2 TA= 125 C TA= 85C<br>TA= 25C<br>TA= -55C<br>0 oD 10 sunenaneees<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 21 Diode Forward Voltage vs. Current Fig. 22 Typical Junction Capacitance<br>10<br>8<br>iit ti<br>6 VIDDS= -2.3A= -15V<br>ee<br>4<br>tiM i<br>2<br>ED A4nnne<br>0<br>0 2 4 6 8 10 12 14<br>/Fi Qg, TOTAL GATE CHARGE (nC) tity<br>Fig. 23 Gate-Charge Characteristics<br>)<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>DS(on) -V<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I , JUNCTION CAPACITANCE (pF)T<br>C<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>
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**DMG6601LVT**
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1<br>D = 0.7<br>D = 0.5<br>OT D = 0.3 cere TE<br>0.1<br>D = 0.1 D = 0.9<br>D = 0.05<br>R07 D = 0.02 AU<br>0.01<br>D = 0.01<br>D = 0.005 RJA(t) = r(t) * RJA<br>ee R JA = 143°C/W mull<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001 See i<br>Ecvv TL TTIM CEI TEIN AATF 3 Hl<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 24 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
## **Package Outline Dimensions**
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D<br>TSOT26<br>e1<br>Dim Min Max Typ<br>kK—- eeee<br>ee A 1.00 <br>A1 0.01 0.10 <br>A2 0.84 0.90 <br>E44 D 2.90<br>E1 q T E ee E 2.80<br>E1 1.60<br>4 c L2 eeoe b 0.30 0.45 <br> c 0.12 0.20 <br>L re e 0.95<br>a e a t e 4x1 = e1 1.90<br>6x b L 0.30 0.50<br>| 4 L2 0.25<br>θ 0° 8° 4°<br>A A2<br>θ1 4° 12° <br>| ———— ee ee ee<br>| All Dimensions in mm<br> CAA SE<br>A1<br>ested Pad Layout yout out<br>C C<br>Value<br>Dimensions<br>(in mm)<br>Y1 C 0.950<br>X 0.700<br>Y 1.000<br>Y1 3.199<br>Y (6x)<br>P n<br>000<br>X (6x)<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout yout out**
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DMG6601LVT Document number: DS35405 Rev. 4 - 2
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## **DMG6601LVT**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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Updated at June 9, 2026
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